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Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
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2016 (English)In: Materials, ISSN 1996-1944, E-ISSN 1996-1944, Vol. 9, no 5, 315Article in journal (Refereed) Published
Abstract [en]

The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4–0.7 eV to 0.2–0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

Place, publisher, year, edition, pages
2016. Vol. 9, no 5, 315
Keyword [en]
microwave annealing; Schottky barrier height; MOSFETs; dopant segregation; low temperature; diode
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:uu:diva-294771DOI: 10.3390/ma9050315ISI: 000378628500010OAI: oai:DiVA.org:uu-294771DiVA: diva2:931300
Available from: 2016-05-27 Created: 2016-05-27 Last updated: 2016-08-01Bibliographically approved

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Zhang, Shi-Li
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