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Optical properties of reactively sputtered Cu2ZnSnS4 solar absorbers determined by spectroscopic ellipsometry and spectrophotometry
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2016 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 149, 170-178 p.Article in journal (Refereed) PublishedText
Abstract [en]

We have determined for the first time the device-relevant optical constants of 500 nm and 800 nm-thick Cu2ZnSnS4 absorbers, grown on bare and Mo-coated soda-lime glass (SLG), using spectroscopic ellipsometry (SE). The composition, structure, phase purity and morphology were characterized by X-ray fluorescence, X-ray photoelectron spectroscopy depth profiling, X-ray diffraction, Raman spectroscopy, scanning-electron microscopy and atomic force microscopy. For the SE analysis, carefully determined sample characteristics were utilized to build a multilayer stack optical model, in order to derive the dielectric functions and refractive indices. The SE-derived absorption coefficients from CZTS/SLG samples were compared with those derived from complementary spectrophotometry measurements and found to be in good agreement. The bandgap determined from Tauc plots was E-g=1.57 +/- 0.02 eV. The absorption coefficients just above the bandgap were found to be a few 10(4) cm(-1) and to exceed 10(5) cm(-1) at energies above similar to 2.5 eV, which is much higher than previously found. The sub-bandgap k-value was found to be k similar to 0.05 or less, suggesting that a moderate band tail is present. Separate device characterization performed on identical samples allowed us to assign device efficiencies of, respectively, 2.8% and 5.3% to the 500 nm and 800 nm-thick samples featured in this study.

Place, publisher, year, edition, pages
2016. Vol. 149, 170-178 p.
Keyword [en]
Ellipsometry, Cu2ZnSnS4, Optical properties, Bandgap, Absorption coefficient, Thin film solar cell
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:uu:diva-294657DOI: 10.1016/j.solmat.2016.01.014ISI: 000373539900023OAI: oai:DiVA.org:uu-294657DiVA: diva2:932674
Funder
Knut and Alice Wallenberg FoundationSwedish Research CouncilSwedish Foundation for Strategic Research
Available from: 2016-06-02 Created: 2016-05-26 Last updated: 2016-06-02Bibliographically approved

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Li, Shu-YiHagglund, CarlRen, YiScragg, Jonathan J. S.Larsen, Jes K.Frisk, ChristopherRudisch, KatharinaEnglund, SvenPlatzer-Bjorkman, Charlotte
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Solid State Electronics
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Solar Energy Materials and Solar Cells
Engineering and Technology

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