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Schottky barrier height tuning via nickel silicide as diffusion source dopant segregation scheme with microwave annealing
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2015 (English)Conference paper, Published paper (Refereed)
Place, publisher, year, edition, pages
2015.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-295381OAI: oai:DiVA.org:uu-295381DiVA: diva2:933536
Conference
15th International Workshop on Junction Technology, Kyoto, Japan
Available from: 2016-06-06 Created: 2016-06-06 Last updated: 2016-06-06

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CiteExportLink to record
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Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
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Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
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Output format
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