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Low-temperature synthesis of thermochromic vanadium dioxide thin films by reactive high power impulse magnetron sputtering
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
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2016 (English)In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 149, 137-144 p.Article in journal (Refereed) PublishedText
Abstract [en]

Thermochromic (TC) vanadium dioxide thin films provide means for controlling solar energy throughput and can be used for energy-saving applications such as smart windows. One of the factors limiting the deployment of VO2 films in TC devices is the growth temperature tau(s). At present, temperatures in excess of 450 degrees C are required, which clearly can be an impediment especially for temperature-sensitive substrates. Here we address the issue of high tau(s) by synthesizing VO2 thin films from highly ionized fluxes of depositing species generated in high power impulse magnetron sputtering (HiPIMS) discharges. The use of ions facilitates low-temperature film growth because the energy of the depositing species can be readily manipulated by substrate bias. For comparison, films were also synthesized by pulsed direct current magnetron sputtering. Structural and optical characterization of VO2 thin films on ITO-coated glass substrates confirms previous results that HiPIMS allows tau(s) to be reduced from 500 to 300 degrees C. Importantly, we demonstrated that HiPIMS permits the composition and TC response of the films to be tuned by altering the energy of the deposition flux via substrate bias. An optimum ion energy of 100 eV was identified, which points at a potential for further reduction of tau(s) thereby opening new possibilities for industrially-relevant applications of VO2-based TC thin films. Weak TC activity was observed even at tau(s) approximate to 200 degrees C in HiPIMS-produced films.

Place, publisher, year, edition, pages
2016. Vol. 149, 137-144 p.
Keyword [en]
Vanadium oxide, Thermochromic thin films, Energy saving, HiPIMS, Ionized PVD, Low-temperature film growth
National Category
Materials Engineering
Identifiers
URN: urn:nbn:se:uu:diva-294656DOI: 10.1016/j.solmat.2016.01.009ISI: 000373539900019OAI: oai:DiVA.org:uu-294656DiVA: diva2:934039
Funder
Swedish Research Council FormasEU, FP7, Seventh Framework Programme, 267234
Available from: 2016-06-08 Created: 2016-05-26 Last updated: 2016-08-30Bibliographically approved

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Aijaz, AsimJi, Yu-XiaMontero, JoseNiklasson, Gunnar A.Granqvist, Claes G.Kubart, Tomas
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Solid State ElectronicsSolid State Physics
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