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Annealing effects of the untreated and sulfur-treated electrodeposited n-type and p-type cuprous oxide thin films
Univ Colombo, Dept Phys, Colombo 3, Sri Lanka.;Univ Kelaniya, Dept Phys, Kelaniya, Sri Lanka..
Natl Inst Mat Sci, Synchrotron Xray Stn SPring 8, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan..
Natl Inst Mat Sci, Synchrotron Xray Stn SPring 8, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan..
NIMS, Synchrotron Xray Grp, Quantum Beam Unit, 1-1-1 Kouto, Sayo, Hyogo 6795148, Japan.;Japan Synchrotron Radiat Res Inst SPring 8, Res & Utilizat Div, 1-1-1 Kouto, Sayo, Hyogo 6795198, Japan..
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2016 (English)In: Physica status solidi. B, Basic research, ISSN 0370-1972, E-ISSN 1521-3951, Vol. 253, no 4, 765-769 p.Article in journal (Refereed) PublishedText
Abstract [en]

The n-type and p-type cuprous oxide thin films were electrodeposited potentiostatically in acetate and lactate baths, respectively. Sulfur treatment of n-type and p-type cuprous oxide surfaces were achieved using gaseous (NH4)(2)S. Sulfur-treated Cu2O films were annealed in air at 100, 150, 200, 250, 350, and 450 degrees C for unique times to obtain the best photocurrent. Unannealed and annealed samples of sulfur-treated and untreated cuprous oxide were then investigated using high-energy X-ray diffraction (HEXRD). The HEXRD measurements and the pair distribution function (PDF) analysis revealed that the sulfur treatment leads to the formation of crystalline CuS on Cu2O film surfaces. The present study also shows that the sulfur treatment causes minor structural changes in Cu2O samples due to the formation of CuS. It was observed that the sulfur-treated cuprous oxide samples retarded the formation of CuO at higher temperatures showing good thermal stability and enhancement of the photoactivity of the n-type and p-type cuprous oxides.

Place, publisher, year, edition, pages
2016. Vol. 253, no 4, 765-769 p.
Keyword [en]
annealing, Cu2O, electrodeposition, high-energy X-ray diffraction, photocurrent, sulfur treatment, thin films
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-296871DOI: 10.1002/pssb.201552664ISI: 000374142500027OAI: oai:DiVA.org:uu-296871DiVA: diva2:940056
Available from: 2016-06-20 Created: 2016-06-20 Last updated: 2016-06-20Bibliographically approved

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Kapaklis, Vassilios
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