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Ab initio studies of phoshorene island single electron transistor
Indian Inst Technol Patna, Dept Phys, Bitha 801103, Bihar, India..
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Molecular and condensed matter physics.
Indian Inst Technol, Dept Civil Engn, Roorkee 247667, Uttar Pradesh, India..
2016 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 28, no 19, 195302Article in journal (Refereed) PublishedText
Abstract [en]

Phosphorene is a newly unveiled two-dimensional crystal with immense potential for nanoelectronic and optoelectronic applications. Its unique electronic structure and two dimensionality also present opportunities for single electron devices. Here we report the behaviour of a single electron transistor (SET) made of a phosphorene island, explored for the first time using ab initio calculations. We find that the band gap and the charging energy decrease monotonically with increasing layer numbers due to weak quantum confinement. When compared to two other novel 2D crystals such as graphene and MoS2, our investigation reveals larger adsorption energies of gas molecules on phosphorene, which indicates better a sensing ability. The calculated charge stability diagrams show distinct changes in the presence of an individual molecule which can be applied to detect the presence of different molecules with sensitivity at a single molecular level. The higher charging energies of the molecules within the SET display operational viability at room temperature, which is promising for possible ultra sensitive detection applications.

Place, publisher, year, edition, pages
2016. Vol. 28, no 19, 195302
Keyword [en]
phosphorene, density functional theory, single electron transistor, first-principles calculation, sensor, gas sensor, phosphorene sensor
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-297104DOI: 10.1088/0953-8984/28/19/195302ISI: 000374394700008OAI: oai:DiVA.org:uu-297104DiVA: diva2:941237
Available from: 2016-06-22 Created: 2016-06-21 Last updated: 2016-06-22Bibliographically approved

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Kamalakar, M. Venkata
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