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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1999 (English)In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN 0168-583X, Vol. 159, no 3, 133-141 p.Article in journal (Other scientific) Published
Abstract [en]

The partial sputtering yields of different species from silicon dioxide/Si and silicon nitride/Si during high-fluence keV Co Metal Vapour Vacuum Are (MEVVA) irradiation are of importance for both silicide formation and interpretation of sputter profiling.

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 1999. Vol. 159, no 3, 133-141 p.
Keyword [en]
sputtering yield; transients; high fluence equilibrium; ToF-E ERD; silicon; oxide; nitride; RECOIL SPECTROMETRY; MASS; RESOLUTION; LAYERS
Identifiers
URN: urn:nbn:se:uu:diva-66572OAI: oai:DiVA.org:uu-66572DiVA: diva2:94483
Note
Addresses: Zhang YW, Univ Uppsala, Angstrom Lab, Div Ion Phys, Box 534, S-75121 Uppsala, Sweden. Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden. Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China. Lund Inst Technol, DAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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