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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part I: formation of thin silicide surface films
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1999 (English)In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN 0168-583X, Vol. 159, no 3, 142-157 p.Article in journal (Other scientific) Published
Abstract [en]

In order to obtain thin CoSi2 surface layers, Si(1 1 1) and Si(1 0 0), covered by SiO2 or Si3N4 With different thickness, have been implanted by Co to normal fluences from 1x10(16) to 2.6x10(18) ions cm(-2). The Co ions were produced by a high beam curren

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 1999. Vol. 159, no 3, 142-157 p.
Keyword [en]
silicide; MEVVA ion source; normal fluence; synthesis; ToF-E ERD; SiO2; Si3N4; silicon; MEVVA ION-SOURCE; RECOIL SPECTROMETRY; MASS; RESOLUTION; DETECTOR
Identifiers
URN: urn:nbn:se:uu:diva-66573OAI: oai:DiVA.org:uu-66573DiVA: diva2:94484
Note
Addresses: Zhang YW, Univ Uppsala, Div Ion Phys, Angstrom Lab, Box 534, S-75121 Uppsala, Sweden. Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden. Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China. Univ Uppsala, Dept IAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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