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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part III: heavy-fluence Co bombardment induced surface topography development
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1999 (English)In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN 0168-583X, Vol. 159, no 3, 158-165 p.Article in journal (Other scientific) Published
Abstract [en]

The surface topography development of Si(1 0 0), Si(1 1 1), oxide/Si and nitride/Si structures under high normal fluence (1 x 10(16)-2.6 x 10(18) ions cm(-2)) keV Co metal vapour vacuum are (MEVVA) irradiation has been investigated by scanning electron mi

Place, publisher, year, edition, pages
ELSEVIER SCIENCE BV , 1999. Vol. 159, no 3, 158-165 p.
Keyword [en]
surface topography; sputtering; scanning electron microscopy (SEM); silicon; oxide; nitride; MEVVA ION-SOURCE
Identifiers
URN: urn:nbn:se:uu:diva-66574OAI: oai:DiVA.org:uu-66574DiVA: diva2:94485
Note
Addresses: Zhang YW, Univ Uppsala, Div Ion Phys, Angstrom Lab, Box 534, S-75121 Uppsala, Sweden. Lund Inst Technol, Dept Phys Nucl, S-22100 Lund, Sweden. Beijing Normal Univ, Inst Low Energy Nucl Phys, Beijing 100875, Peoples R China. Lund Inst Technol, DAvailable from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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