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High Voltage Single Crystal Diamond Diodes
Element Six Ltd., Ascot, UK.
Element Six Ltd., Ascot, UK.
Element Six Ltd., Ascot, UK.
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. Avdelningen för elektricitetslära och åskforskning.ORCID iD: 0000-0003-2197-5352
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2004 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 51, no 5, 826-828 p.Article in journal (Refereed) Published
Abstract [en]

Demonstration of a 2.5-kV diamond diode is provided by electrical measurements using a circular gold Schottky contact, with an area > 1 mm(2), on large area freestanding single-crystal diamond consisting of a thin high purity layer (< 1 X 10(13) [B]/cm(3)) on a thicker heavily boron-doped (> 1 X 10(19) [B]/cm(3)) substrate with an ohmic back contact. The diode structures were fabricated using a microwave-assisted chemical vapor deposition process. The forward properties of the diode show a space charge limited current, with a forward-voltage drop of 2 V and a hole mobility of 4100 +/- 400 cm(2) /Vs at room temperature. For temperatures between 300 K < T < 380 K the mobility show T-312 dependence. This is consistent with acoustic phonon scattering, emphasizing the high purity quality of the top layer in which carrier transport is phonon rather than defect limited.

Place, publisher, year, edition, pages
2004. Vol. 51, no 5, 826-828 p.
Keyword [en]
Diamond, Electronics
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Engineering Science with specialization in Electronics; Engineering Science with specialization in Science of Electricity
Identifiers
URN: urn:nbn:se:uu:diva-66796DOI: 10.1109/TED.2004.826867ISI: 000221117300028OAI: oai:DiVA.org:uu-66796DiVA: diva2:94707
Available from: 2005-03-11 Created: 2005-03-11 Last updated: 2017-11-28Bibliographically approved

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Isberg, Jan

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