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Influence of compressive biaxial strain on the hydrogen uptake of ultra-thin, single crystal vanadium layers
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics.
1997 (English)In: Physical Review B, ISSN 0163-1829, Vol. 55, no 3, 1774-1781 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the influence of biaxial compressive strain on the thermodynamic propertied of hydrogen in thin, single-crystal vanadium layers (0.9, 1.6, and 2.0 nm). At H/V<0.1 (atomic ratio), the host-mediated H-H interaction was found to be attractive. For H/V>0.1, the interaction was found to be extremely weak in the 0.9-nm-thick layer and repulsive in the 1.6- and 2.0-nm-thick V layers. The repulsive interaction was found to increase with increasing layer thicknesses. These results are unexpected as the interaction is attractive in both bulk V and in thin vanadium layers under biaxial tensile strain for HV<0.5. Both the strained and unstrained vanadium lattices are found to have roughly the same hydrogen affinity at H/V=0.1 (0.3 eV/H). No ordered bulklike beta phase was observed at any concentration (0<H/V<=1) in the temperature range 30-250C. Methods used in this study are resistivity measurements, x-ray diffraction, and nuclear reaction analysis.

Place, publisher, year, edition, pages
1997. Vol. 55, no 3, 1774-1781 p.
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:uu:diva-67058OAI: oai:DiVA.org:uu-67058DiVA: diva2:94969
Available from: 2006-11-08 Created: 2006-11-08 Last updated: 2011-01-15

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Andersson, GabriellaHjörvarsson, Björgvin

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