uu.seUppsala University Publications
Change search
ReferencesLink to record
Permanent link

Direct link
Si-nanoparticle synthesis using ion implantation and MeV ion irradiation
Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden..
Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden..
Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden..
Show others and affiliations
2015 (English)In: Physica Status Solidi C: Current Topics In Solid State Physics, Vol 12, No 12 / [ed] Mascher, P; Moreels, I; Climente, JI; Andre, P; Reece, P; Ribierre, JC; Pereira, L; Philippe, L; Pellicer, E, 2015, no 12, 1301-1305 p.Conference paper (Refereed)Text
Abstract [en]

A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO2 matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO2 by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV 127I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence.

Place, publisher, year, edition, pages
2015. no 12, 1301-1305 p.
Series
, Physica Status Solidi C-Current Topics in Solid State Physics, ISSN 1862-6351 ; 12
Keyword [en]
silicon-nanoparticle, ion implantation, ion irradiation
National Category
Subatomic Physics
Identifiers
URN: urn:nbn:se:uu:diva-299676DOI: 10.1002/pssc.201510101ISI: 000375858800001OAI: oai:DiVA.org:uu-299676DiVA: diva2:949889
Conference
E-MRS Spring Meeting / Symposium H / Symposium I / Symposium BB / Symposium FF / Symosium D, MAY 11-15, 2015, Lille, FRANCE
Available from: 2016-07-25 Created: 2016-07-25 Last updated: 2016-07-25Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Chulapakorn, ThawatchartWolff, MaxPrimetzhofer, DanielPossnert, GöranHallén, Anders
By organisation
Applied Nuclear PhysicsMaterials PhysicsTandem LaboratoryDepartment of Physics and Astronomy
Subatomic Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 102 hits
ReferencesLink to record
Permanent link

Direct link