Growth of Co2FeAl Heusler alloy thin films on Si(100) having very small Gilbert damping by Ion beam sputtering
2016 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 6, 28692Article in journal (Refereed) PublishedText
The influence of growth temperature T-s (300-773 K) on the structural phase ordering, static and dynamic magnetization behaviour has been investigated in ion beam sputtered full Heusler alloy Co2FeAl (CFA) thin films on industrially important Si(100) substrate. The B2 type magnetic ordering is established in these films based on the clear observation of the (200) diffraction peak. These ion beam sputtered CFA films possess very small surface roughness of the order of subatomic dimensions (<3 angstrom) as determined from the fitting of XRR spectra and also by AFM imaging. This is supported by the occurrence of distinct Kiessig fringes spanning over the whole scanning range (similar to 4 degrees) in the x-ray reflectivity (XRR) spectra. The Gilbert damping constant alpha and effective magnetization 4 pi M-eff are found to vary from 0.0053 +/- 0.0002 to 0.0015 +/- 0.0001 and 13.45 +/- 00.03 kG to 14.03 +/- 0.04 kG, respectively. These Co2FeAl films possess saturation magnetization ranging from 4.82 +/- 0.09 to 5.22 +/- 0.10 mu(B)/f.u. consistent with the bulk L2(1)-type ordering. A record low alpha-value of 0.0015 is obtained for Co2FeAl films deposited on Si substrate at T-s similar to 573 K.
Place, publisher, year, edition, pages
2016. Vol. 6, 28692
Other Physics Topics Engineering and Technology
IdentifiersURN: urn:nbn:se:uu:diva-299867DOI: 10.1038/srep28692ISI: 000378783900001PubMedID: 27357004OAI: oai:DiVA.org:uu-299867DiVA: diva2:950242