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Properties of Hf02 Thin Films Grown by ALD from Hafnium tetrakis(ethylmethylamide) and Water
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
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2004 (English)In: Journal of The Electrochemical Society, Vol. 151, no 8, F189-F193 p.Article in journal (Refereed) Published
Abstract [en]

Hf02 films were grown by atomic layer deposition (ALD) from

Hf[N(CH3)(C2H5)]4 and H2O on Si(lOO) substrates. The Thickness of 5-45 nm thick films on HF-etched SI was proportinal to the number of growth cycles. Crystallization was observed

in the 30-45 nm thick films, containing the monoclinic Hf02 polymorph. Films with thicknesses lower than 10 nm were

amorphous. The effective permittivity of the dielectric films varied between 6.5 and 17. The leakage and capacitive characteristics did not show any clear dependence on the HfO2 growth temperature.

Place, publisher, year, edition, pages
2004. Vol. 151, no 8, F189-F193 p.
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-67631OAI: oai:DiVA.org:uu-67631DiVA: diva2:95542
Available from: 2006-03-21 Created: 2006-03-21 Last updated: 2011-01-12

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Lu, JunHårsta, Anders

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