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Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films
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2004 (English)In: Journal of Applied Physics, Vol. 96, no 9, 5298-5307 p.Article in journal (Refereed) Published
Abstract [en]

Hf02 films were atomic layer deposited from HfCl4 and H20 on

Si(lOO) in the temperature range of 226-750 °C. The films consisted of dominantly the monoclinic polymorph. Elastic recoil

detection analysis revealed high residual chlorine and hydrogen contents (2-5 at. %) in the films grown below 300-350 °C. The content of residual hydrogen and chlorine monotonouslydecreased with increasing growth temperature. The effctive permittivity insignificantly depended on the

growth temperature and water partial pressure. Capacitance-voltage curves exhibited market hysteresis especially in the films grown at 400-450 ° C, and demonstrated enhanced distortions likely due to the increased trap densities in the films grown at 700-750 °C. Changes in water pressure led to some changes in the extent of crystallization, but did not induce any clear change; in the capacitance of the dielectric layer.

Place, publisher, year, edition, pages
2004. Vol. 96, no 9, 5298-5307 p.
National Category
Inorganic Chemistry
URN: urn:nbn:se:uu:diva-67634OAI: oai:DiVA.org:uu-67634DiVA: diva2:95545
Available from: 2006-03-21 Created: 2006-03-21 Last updated: 2011-01-12

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Lu, JunHårsta, Anders
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Department of Engineering SciencesInorganic Chemistry
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