Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films
2004 (English)In: Journal of Applied Physics, Vol. 96, no 9, 5298-5307 p.Article in journal (Refereed) Published
Hf02 films were atomic layer deposited from HfCl4 and H20 on
Si(lOO) in the temperature range of 226-750 °C. The films consisted of dominantly the monoclinic polymorph. Elastic recoil
detection analysis revealed high residual chlorine and hydrogen contents (2-5 at. %) in the films grown below 300-350 °C. The content of residual hydrogen and chlorine monotonouslydecreased with increasing growth temperature. The effctive permittivity insignificantly depended on the
growth temperature and water partial pressure. Capacitance-voltage curves exhibited market hysteresis especially in the films grown at 400-450 ° C, and demonstrated enhanced distortions likely due to the increased trap densities in the films grown at 700-750 °C. Changes in water pressure led to some changes in the extent of crystallization, but did not induce any clear change; in the capacitance of the dielectric layer.
Place, publisher, year, edition, pages
2004. Vol. 96, no 9, 5298-5307 p.
IdentifiersURN: urn:nbn:se:uu:diva-67634OAI: oai:DiVA.org:uu-67634DiVA: diva2:95545