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Defect levels in Cu(In,Ga)Se-2 studied using capacitance and photocurrent techniques
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland..
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland..
Warsaw Univ Technol, Fac Phys, Koszykowa 75, PL-00662 Warsaw, Poland..
Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
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2016 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 28, no 21, 215801Article in journal (Refereed) Published
Abstract [en]

This work contributes to the discussion on defect levels in Cu(In, Ga)Se-2 photovoltaic material. CuInSe2- and Cu(In, Ga)Se-2-based Schottky junctions, solar cells and thin films were investigated using complementary capacitance and current spectroscopic techniques. Depending on the applied technique and type of investigated structure, six different signals were observed. Out of the signals identified, three were ascribed to responses from bulk defects-two electron and one hole trap. The remainder were discussed in light of available in-literature models including carrier mobility freeze-out and non-ohmic back junction.

Place, publisher, year, edition, pages
2016. Vol. 28, no 21, 215801
Keyword [en]
solar cells, defects, DLTS, CIGS
National Category
Electrical Engineering, Electronic Engineering, Information Engineering Condensed Matter Physics
Identifiers
URN: urn:nbn:se:uu:diva-302220DOI: 10.1088/0953-8984/28/21/215801ISI: 000376409400007OAI: oai:DiVA.org:uu-302220DiVA: diva2:956963
Available from: 2016-08-31 Created: 2016-08-31 Last updated: 2016-08-31Bibliographically approved

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Szaniawski, PiotrEdoff, Marika
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Solid State Electronics
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Electrical Engineering, Electronic Engineering, Information EngineeringCondensed Matter Physics

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