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Low temperature transport of Al into and through copper starting with Cu/Al/SiO2 bilayers
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1999 (English)In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 85, no 3, p. 1487-1495Article in journal (Other scientific) Published
Abstract [en]

The transport of Al into Cu is studied by annealing Cu/Al/SiO2 bilayers. In order to minimize the effects of contaminants, samples were prepared and annealed in all-metal ultrahigh vacuum systems. In situ resistivity was used to continuously monitor the t

Place, publisher, year, edition, pages
AMER INST PHYSICS , 1999. Vol. 85, no 3, p. 1487-1495
Keywords [en]
FILMS; METALLIZATION
Identifiers
URN: urn:nbn:se:uu:diva-67938OAI: oai:DiVA.org:uu-67938DiVA, id: diva2:95849
Note
Addresses: Lanford WA, SUNY Albany, Dept Phys, Albany, NY 12222 USA. Uppsala Univ, Dept Phys, Uppsala, Sweden. Rensselaer Polytech Inst, Dept Chem Engn, Troy, NY 12180 USA.Available from: 2008-10-17 Created: 2008-10-17 Last updated: 2011-01-14

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