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GROWTH AND CHARACTERIZATION OF YTTRIUM-OXIDE THIN-LAYERS ON SILICON DEPOSITED BY YTTRIUM EVAPORATION IN ATOMIC OXYGEN
Uppsala University.
Uppsala University.
Uppsala University.
1995 (English)In: VACUUM, Vol. 46, no 8-10, 967-970 p.Other (Other scientific)
Abstract [en]

Polycrystalline yttrium oxide films have been grown cinder high vacuum conditions by evaporation of yttrium in an atomic oxygen plasma. Well-oxidized uniform layers in the thickness interval 30-170 nm were deposited on silicon over a large temperature ra

Place, publisher, year, pages
PERGAMON-ELSEVIER SCIENCE LTD , 1995. Vol. 46, no 8-10, 967-970 p.
Keyword [en]
YBA2CU3O7-X FILMS; EPITAXIAL-GROWTH; BUFFER LAYERS; SI
Identifiers
URN: urn:nbn:se:uu:diva-68588OAI: oai:DiVA.org:uu-68588DiVA: diva2:96499
Note
Addresses: HUDNER J, ROYAL INST TECHNOL, DEPT SOLID STATE ELECTR, E229, S-16440 KISTA, SWEDEN. CTR IND MICROELECTR, S-16421 KISTA, SWEDEN. UNIV UPPSALA, DEPT INORGAN CHEM, S-75121 UPPSALA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17

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