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Improved Direct Bonding of Si- and SiO2 surfaces by Cleaning in H2SO4:H2O2:HF
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
1995 (English)In: Appl. Phys. Lett, ISSN 0003-6951, Vol. 67, no 5, 650-652 p.Article in journal (Refereed) Published
Abstract [en]

A method for silicon surface preparation prior to wafer bonding in presented. By cleaning thp wafers in a H2SO4:H2O2 mixture in which a small amount of HF is added, and then rinsing in H2O, the bonding behavior of the surfaces is improved, compared to ot

Place, publisher, year, edition, pages
1995. Vol. 67, no 5, 650-652 p.
Keyword [en]
SILICON-ON-INSULATOR
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-68646OAI: oai:DiVA.org:uu-68646DiVA: diva2:96557
Note
Addresses: LJUNGBERG K, UNIV UPPSALA, DEPT TECHNOL, DIV ELECTR, BOX 534, S-75121 UPPSALA, SWEDEN. UNIV UPPSALA, DEPT INORGANIC CHEM, POB 538 S-75121 UPPSALA, SWEDEN.Available from: 2007-03-07 Created: 2007-03-07 Last updated: 2011-01-16

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Jansson, Ulf

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