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CHEMICAL-VAPOR-DEPOSITION OF TIO AND TI2O3 FROM TICL4/H-2/CO2 GAS-MIXTURES
Uppsala University.
Uppsala University.
1995 (English)In: SURFACE & COATINGS TECHNOLOGY, Vol. 73, no 3, 160-169 p.Other (Other scientific)
Abstract [en]

Chemical vapour deposition of TiO and Ti2O3 from TiCl4/H-2/CO2 gas mixtures was studied. A temperature of 1000 degrees C and pressures in the range (13-6.7) x 10(3) Pa were utilized. Mainly silica was used as substrate material and in the case of Ti2O3 (

Place, publisher, year, pages
ELSEVIER SCIENCE SA LAUSANNE , 1995. Vol. 73, no 3, 160-169 p.
Keyword [en]
CHEMICAL VAPOR DEPOSITION; TIO; TI2O3; TICL4/H-2/CO2 PROCESS; TITANIUM-OXIDES; THIN-FILMS
Identifiers
URN: urn:nbn:se:uu:diva-68816OAI: oai:DiVA.org:uu-68816DiVA: diva2:96727
Note
Addresses: FREDRIKSSON E, UNIV UPPSALA, INST CHEM, THIN FILM & SURFACE CHEM GRP, BOX 531, S-75121 UPPSALA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17

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