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CVD of tungsten schottky diodes to 6H-SiC
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
1996 (English)In: Institute of Physics Conference Series, Vol. 142, 677-680 p.Article in journal (Refereed) Published
Abstract [en]

Temperature stable tungsten Schottky contacts to low doped 6H-Silicon Carbide (SiC) were fabricated via chemical vapour deposition (CVD) at 670 K followed by a reactive ion etch to pattern the contacts. X-ray diffraction (XRD), X-ray photoelectron spectr

Place, publisher, year, edition, pages
1996. Vol. 142, 677-680 p.
Keyword [en]
SILICON-CARBIDE; BARRIER DIODES; CONTACTS
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-69707OAI: oai:DiVA.org:uu-69707DiVA: diva2:97618
Note
Addresses: Lundberg N, ROYAL INST TECHNOL, DEPT ELECT E229, S-16440 KISTA, SWEDEN. UPPSALA UNIV, DEPT CHEM, UPPSALA, SWEDEN.Available from: 2006-12-18 Created: 2006-12-18 Last updated: 2011-01-15

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