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Crystal growth of vanadium silicides from high-temperature metal solutions and some properties of the crystals
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
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1996 (English)In: MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, Vol. 209, no 1-2, 33-37 p.Other (Other scientific)
Abstract [en]

Crystals of vanadium silicides were grown from high-temperature tin and copper solutions in an argon atmosphere using vanadium metal chips and silicon powder as starting materials. The crystals grown were V3Si, V5Si3 and VSi2. The growth conditions for o

Place, publisher, year, pages
ELSEVIER SCIENCE SA LAUSANNE , 1996. Vol. 209, no 1-2, 33-37 p.
Keyword [en]
tin flux; copper flux; unit cell dimensions; chemical analysis; microhardness; electrical resistivity; oxidation
Identifiers
URN: urn:nbn:se:uu:diva-69729OAI: oai:DiVA.org:uu-69729DiVA: diva2:97640
Note
Addresses: Okada S, KANAGAWA UNIV, FAC ENGN, KANAZAWA KU, 3-27-1 ROKKAKUBASHI, YOKOHAMA, KANAGAWA 221, JAPAN. TOYO KOHAN CO LTD, TECHN DEPT, CHIYODA KU, TOKYO 100, JAPAN. UNIV UPPSALA, INST CHEM, S-75121 UPPSALA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17

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