On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature
2001 (English)In: Applied Surface Science, Vol. 172, no 3-4, 200-206 p.Article in journal (Refereed) Published
Hydrogenated amorphous carbon films have been deposited on tungsten and quartz substrates at room temperature by photolytic dissociation of CH2I2. An Ar+ cw laser operating at 350 nm was used as the excitation source. The laser beam was focused parallel to the substrate surface. The deposition process was investigated as a function of laser power and total pressure. The carbon films were analysed by micro-Raman spectroscopy, IR spectroscopy, atomic force microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The growth mechanism is discussed from results and analysis.
Place, publisher, year, edition, pages
2001. Vol. 172, no 3-4, 200-206 p.
Amorphous hydrogenated carbon, Laser CVD, Photolysis; Modeling
IdentifiersURN: urn:nbn:se:uu:diva-69780DOI: doi:10.1016/S0169-4332(00)00853-9OAI: oai:DiVA.org:uu-69780DiVA: diva2:97691