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On the growth mechanism of UV laser deposited a-C:H from CH2I2 at room temperature
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
2001 (English)In: Applied Surface Science, Vol. 172, no 3-4, 200-206 p.Article in journal (Refereed) Published
Abstract [en]

Hydrogenated amorphous carbon films have been deposited on tungsten and quartz substrates at room temperature by photolytic dissociation of CH2I2. An Ar+ cw laser operating at 350 nm was used as the excitation source. The laser beam was focused parallel to the substrate surface. The deposition process was investigated as a function of laser power and total pressure. The carbon films were analysed by micro-Raman spectroscopy, IR spectroscopy, atomic force microscopy, scanning electron microscopy and energy dispersive X-ray spectroscopy. The growth mechanism is discussed from results and analysis.

Place, publisher, year, edition, pages
2001. Vol. 172, no 3-4, 200-206 p.
Keyword [en]
Amorphous hydrogenated carbon, Laser CVD, Photolysis; Modeling
National Category
Inorganic Chemistry
Identifiers
URN: urn:nbn:se:uu:diva-69780DOI: doi:10.1016/S0169-4332(00)00853-9OAI: oai:DiVA.org:uu-69780DiVA: diva2:97691
Available from: 2005-10-19 Created: 2005-10-19 Last updated: 2011-01-14

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Boman, Mats

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