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Chemical vapor deposition of tungsten schottky diodes to 6H-SiC
Uppsala University.
Uppsala University.
Uppsala University.
Uppsala University.
1996 (English)In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Vol. 143, no 5, 1662-1667 p.Other (Other scientific)
Abstract [en]

Thermally stable tungsten Schottky contacts to low doped GH-silicon carbide (SiC) were fabricated via chemical vapor deposition at 670 K followed by a reactive ion etch to pattern the contacts. Physical characterization by x-ray diffraction, x-ray photoe

Place, publisher, year, pages
ELECTROCHEMICAL SOC INC , 1996. Vol. 143, no 5, 1662-1667 p.
Keyword [en]
SILICON-CARBIDE; BARRIER DIODES; CONTACTS
Identifiers
URN: urn:nbn:se:uu:diva-69870OAI: oai:DiVA.org:uu-69870DiVA: diva2:97781
Note
Addresses: Lundberg N, ROYAL INST TECHNOL, DEPT ELECTR, S-16440 KISTA, SWEDEN. UNIV UPPSALA, DEPT CHEM, UPPSALA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17

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