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Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
1996 (English)In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 143, no 5, 1709-1714 p.Article in journal (Refereed) Published
Abstract [en]

Two combinations of oxidizing and etching agents, H2SO4:H2O2:HF and HNO3:HF, have been used to modify silicon surfaces prior to wafer bonding. The chemical oxide thickness can be adjusted between 0 and 10 Angstrom by tuning the HF content of the mixtures

Place, publisher, year, edition, pages
1996. Vol. 143, no 5, 1709-1714 p.
Keyword [en]
ON-INSULATOR; INTERFACES; OXIDE
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:uu:diva-69880OAI: oai:DiVA.org:uu-69880DiVA: diva2:97791
Note
Addresses: Ljungberg K, UNIV UPPSALA, DEPT TECHNOL, BOX 534, S-75121 UPPSALA, SWEDEN. UNIV UPPSALA, DEPT INORGAN CHEM, S-75121 UPPSALA, SWEDEN. CHALMERS UNIV TECHNOL, DEPT SOLID STATE ELECTR, S-41296 GOTHENBURG, SWEDEN.Available from: 2007-03-06 Created: 2007-03-06 Last updated: 2011-01-15

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