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Fabrication of high-density ordered nanoarrays in silicon dioxide by MeV ion track lithography
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Ion Physics. Physics, Department of Physics and Materials Science, Materials Science. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Jonfysik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Ion Physics. Physics, Department of Physics and Materials Science, Materials Science. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Ion Physics. Physics, Department of Physics and Materials Science, Materials Science. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Jonfysik.
Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Ion Physics. Physics, Department of Physics and Materials Science, Materials Science. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Materialvetenskap.
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2005 (English)In: Journal of Applied Physics, Vol. 97, 044310- p.Article in journal (Refereed) Published
Abstract [en]

Self-assembled nanoporous alumina films were employed as masks for MeV ion track lithography. Films with thickness of 2 µm and pore diameters of 30 and 70 nm were attached to thermally grown SiO2 covered with a thin gold layer. The samples were aligned with respect to the beam by detecting backscattered He+ ions with the initial energy of 2 MeV. The ordered pattern of the porous alumina films was successfully transferred into SiO2 after irradiation with a 4 MeV Cl2+ beam at fluence of 1014 ions/cm2, followed by chemical etching in a 5% HF solution.

Place, publisher, year, edition, pages
2005. Vol. 97, 044310- p.
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Inorganic Chemistry
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URN: urn:nbn:se:uu:diva-70019DOI: doi:10.1063/1.1850617OAI: oai:DiVA.org:uu-70019DiVA: diva2:97930
Available from: 2008-09-24 Created: 2008-09-24 Last updated: 2011-01-12

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Johansson, AndersPossnert, GöranHjort, Klas

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