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Chemical vapour deposition of Cu2O and CuO from CuI and O-2 or N2O
Uppsala University.
Uppsala University.
1996 (English)In: SURFACE & COATINGS TECHNOLOGY, Vol. 78, no 1-3, 263-273 p.Other (Other scientific)
Abstract [en]

Thin films of CuO and Cu2O were deposited from CuI as the copper source and O-2 or N2O as the oxygen source. If O-2 was used, both CuO and Cu2O were obtained. Cu2O was deposited at low O-2 partial pressures (P-O2 <0.2 Torr) in a long isothermal hot wall

Place, publisher, year, edition, pages
ELSEVIER SCIENCE SA LAUSANNE , 1996. Vol. 78, no 1-3, 263-273 p.
Keyword [en]
chemical vapour deposition; copper oxides; THIN-FILMS; HALIDE PRECURSORS; CVD; OXIDE; PHASE; MORPHOLOGY; COPPER
URN: urn:nbn:se:uu:diva-70068OAI: oai:DiVA.org:uu-70068DiVA: diva2:97979
Addresses: Ottosson M, UNIV UPPSALA, DEPT INORGAN CHEM, THIN FILM & SURFACE CHEM GRP, BOX 531, S-75121 UPPSALA, SWEDEN.Available from: 2008-10-17 Created: 2008-10-17

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