Passivation of copper by low temperature annealing of Cu/Mg/SiO2 bilayers
1996 (English)In: CHEMICAL ENGINEERING COMMUNICATIONS, ISSN 0098-6445, Vol. 153, 253-259 p.Article in journal (Other scientific) Published
Annealed thin films of Cu/Mg/SiO2 are studied as possible conductors for microelectronics. Rutherford backscattering and sheet resistance measurements show that vacuum annealing at 350-400 degrees C results in transport of Mg from the buried layer to the
Place, publisher, year, edition, pages
GORDON BREACH SCI PUBL LTD , 1996. Vol. 153, 253-259 p.
microelectronics; copper; passivation; metallization; resistivity; CORROSION
IdentifiersURN: urn:nbn:se:uu:diva-71591OAI: oai:DiVA.org:uu-71591DiVA: diva2:99502
Addresses: Lanford WA, SUNY Albany, Dept Phys, Albany, NY 12222 USA. SUNY Albany, Dept Phys, Albany, NY 12222 USA. Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA. Univ Uppsala, Dept Phys, S-75121 Uppsala, Sweden.2008-10-172008-10-172011-01-15