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2019 (English)In: The Journal of Engineering, ISSN 1872-3284, E-ISSN 2051-3305, no 8, p. 5391-5396Article in journal (Refereed) Published
Abstract [en]
This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, half-duplex transceiver (TRX) chip implemented in 65 nm CMOS technology. It supports short range point-to-point data rate up to 6 Gbps by employing on-off keying (OOK). To investigate the irradiation hardness for high-energy physics (HEP) applications, two TRX chips were irradiated with total ionising doses (TID) of 74 and 42 kGy and fluence of 1.4 x 10(14)N(eq)/cm(2) and 0.8 x 10(14)N(eq)/cm(2) for RX and TX modes, respectively. The chips were characterised by pre- and post-irradiation analogue voltage measurements on different circuit blocks as well as through the analysis of wireless transmission parameters like bit error rate (BER), eye diagram, jitter etc. Post-irradiation measurements have shown certain reduction in performance but both TRX chips have been found operational through over the air measurements at 5 Gbps. Moreover, very small shift in the carrier frequency was observed after the irradiation.
Place, publisher, year, edition, pages
INST ENGINEERING TECHNOLOGY-IET, 2019
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
urn:nbn:se:uu:diva-393829 (URN)10.1049/joe.2018.5402 (DOI)000482435600005 ()
2019-10-012019-10-012021-01-26Bibliographically approved