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  • 1.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Litwin, Andrej
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Small Signal and Power Evaluation of Novel BiCMOS -Compatible Short-Channel LDMOS Technology2003In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 51, no 3, p. 1052-1056Article in journal (Refereed)
  • 2.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A Novel Load-Pull Configuration for Envelope Tracking ApplicationsIn: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670Article in journal (Refereed)
  • 3.
    Cheng, Shi
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signals and Systems Group.
    Ferrari, Arnaud
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Nuclear and Particle Physics.
    Johnson, Magnus
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Nuclear and Particle Physics.
    Rydberg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signals and Systems Group.
    Ziemann, Volker
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Nuclear and Particle Physics.
    Öjefors, Erik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signals and Systems Group.
    Reduction of the coupling to external sources and modes of propagation by a nearly confocal resonator2007In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 55, no 10, p. 2257-2261Article in journal (Refereed)
    Abstract [en]

    This paper presents a numerical and experimental study of a nearly confocal resonator with spherical mirrors at 12 GHz. The geometry was chosen in order to have a large quality factor for the diffraction losses, and thereby a weak coupling to external parasitic TE and TM modes, that propagate in a pipe on which the resonator may be installed. In turn, this allows a significant improvement of its signal-to-noise ratio, e.g., when used as a beam monitor.

  • 4.
    Goryashko, Vitaliy A.
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, High Energy Physics.
    Bhattacharyya, Anirban Krishna
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, High Energy Physics.
    Li, Han
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, High Energy Physics.
    Dancila, Dragos
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, High Energy Physics.
    Ruber, Roger
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, High Energy Physics.
    A Method for High-Precision Characterization of the Q-Slope of Superconducting RF Cavities2016In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 64, no 11, p. 3764-3771Article in journal (Refereed)
    Abstract [en]

    We propose a novel method for high-precision determination of a quality factor Q(0) of a superconducting radio-frequency cavity as a function of the strength of the field excited in the cavity, the so-called Q-slope. Usually, the cavity parameters are measured only at resonance for different cavity field strengths, but such a single data point measurement for a given field strength results in a 10%-15% uncertainty in Q(0). In contrast, we propose a method that improves the accuracy of Q(0) determination by an order of magnitude. We vary the phase of an excited stabilized field in the cavity and measure the reflection coefficient of the cavity as a function of the phase. The procedure is repeated for different strengths of the excited field. Given the fact that the complex reflection coefficient of a cavity describes a perfect circle in polar coordinates as a function of the field phase for a constant field strength, we find the coupling coefficient much more accurately by fitting the overdetermined set of measured data to the circle for each value of the cavity field. From the time-decay measurement, which allows least-squares minimization, we accurately find the total (loaded) quality factor and deduce Q(0) with an uncertainty of around 1%.

  • 5.
    Norling, Martin
    et al.
    Department of Microtechnology and Nanosciences.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Gevorgian, Spartak
    Department of Microtechnology and Nanosciences.
    Oscillators Based on Monolithically Integrated AlN TFBARs2008In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 56, no 12, p. 3209-3216Article in journal (Refereed)
    Abstract [en]

    Oscillators based on AlN thin-film bulk acoustic resonators are designed, fabricated and measured. The circuits are realised as silicon-on-silicon multichip modules where SiGe transistors are flip-chip mounted on a novel carrier substrate which includes monolithically integrated resonators and passive components. The paper describes the development and processing of the carrier substrate and resonators, as well as the development of the oscillator circuits. The oscillators operate at 2 GHz. Measurements of the oscillators reveal a lowest phase-noise of -125 dBc/Hz at 100 kHz offset.

  • 6. Salinas, Alfonso
    et al.
    Porti, Jorge
    Fornieles, Jesus
    Toledo Redondo, Sergio
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Swedish Institute of Space Physics, Uppsala Division.
    Navarro, Enrique A.
    Morente-Molinera, Juan A.
    TLM Nodes: A New Look at an Old Problem2015In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 63, no 8, p. 2449-2458Article in journal (Refereed)
    Abstract [en]

    In this paper, an alternative perspective on the transmission line modeling (TLM) method concepts to unify previous work is presented. The procedure begins by discretizing Maxwell's equations and proposing TLM equivalent models. Node voltage and mesh current definitions are provided in terms of link line contributions, compatible with stub currents and voltages. They allow obtaining an expression that relates incident and reflected pulses with no other condition required. With this unified approach, modeling of other situations is straightforward. 2-D cases, source implementation, and anisotropic media are described and numerically tested.

  • 7. Tripodi, Lorenzo
    et al.
    Hu, Xin
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Goetzen, Reiner
    Matters-Kammerer, Marion K.
    van Goor, Dave
    Cheng, Shi
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Rydberg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Broadband CMOS Millimeter-Wave Frequency Multiplier With Vivaldi Antenna in 3-D Chip-Scale Packaging2012In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 60, no 12, p. 3761-3768Article in journal (Refereed)
    Abstract [en]

    This paper describes a frequency multiplier able to emit a broadband signal with a frequency range from 70 GHz up to at least 170 GHz. The device is composed of a nonlinear transmission line (NLTL) implemented in commercial CMOS 65-nm technology and an off-chip Vivaldi antenna. These two elements are packaged together with a 3-D chip-scale packaging technology. Characterization of the whole device and of the standalone NLTL is presented at frequencies up to 170 GHz.

  • 8.
    Öjefors, Erik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signal Processing.
    Sönmez, Ertugrul
    Chartier, Sebastien
    Lindberg, Peter
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signal Processing.
    Schick, Christoph
    Rydberg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signal Processing.
    Schumacher, Hermann
    Monolithic Integration of a Folded Dipole Antenna With a 24-GHz Receiver in SiGe HBT Technology2007In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 55, no 7, p. 1467-1475Article in journal (Refereed)
    Abstract [en]

    The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-mum SiGe HBT process is presented. A high-resistivity silicon substrate (1000 Omega ldr cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna, requires a chip area of 4.5 mm2 and provides 30-dB conversion gain at 24 GHz with a power consumption of 960 mW.

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