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  • 1. Arvidsson, Igor
    Adsorption of H, NHx, BHx and BBrx on a (110) Surface of c-BN: A Quantum Mechanical DFT Study2007In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 16, p. 131-Article in journal (Refereed)
  • 2.
    Arvidsson, Igor
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
    Larsson, Karin
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
    Adsorption of H, NHx, BHx and BBrx on a (110) surface of c-BN: A quantum-mechanical DFT study2007In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 16, no 1, p. 131-137Article in journal (Refereed)
    Abstract [en]

    The adsorption of H, NHx, BHx and BBrx (x = 1, 2 and 3) on hydrogen-terminated (110) surfaces of c-BN has been investigated theoretically. Density Functional Theory (DFT) methods were used in order to study the adsorption processes of these different species on both nitrogen and boron sites at the surfaces. With one exception, all adsorption processes were found to be exothermic and in the order; BBr·  BH2· ≈H· > BH·  NH· ≈ BBr2· > NH2·  BH3· > NH3· > BBr3· for a nitrogen site, and NH2· > NH· > BBr· > H· > BH· > BH2· ≈ BBr2·  BBr3· ≈ NH3· ≈BH3· for a boron site. The exception was NH3 being bonded to a surface N site, for which the reaction was slightly endothermic. The various modeling parameters that were used in the calculations of these adsorption energies have been chosen by performing series of extensive test calculations, in which the effect of these parameters (e.g. template size, vacuum depth, atom constraints) on bond-strength have been carefully estimated. Moreover, a semi-empirical method has been evaluated with the purpose to study the usefulness of this type of method for the polar BN compound.

  • 3. Barankova, Hana
    et al.
    Bardos, L
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Studies of the optical emission from a hydrogen-hydrocarbon rf plasma jet stream during diamond film deposition1993In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 2, p. 347-352Article in journal (Refereed)
  • 4. Bardos, L
    et al.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Barankova, Hana
    An r.f. plasma jet applied to diamond, glassy carbon and silicon carbide film synthesis1993In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 2, p. 517-522Article in journal (Refereed)
  • 5. Bardos, L
    et al.
    Nyberg, T
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Barankova, Hana
    Effect of the space charge sheath on properties of carbon and diamond films grown in the radio frequency plasma jet1994In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 3, no 4-6, p. 528-530Article in journal (Refereed)
  • 6. Bardos, L
    et al.
    Nyberg, T
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Barankova, Hana
    Effect of the space charge sheath on properties of carbon and diamond films grown in the radio sheath on properties of carbon and diamond films grown in the radio frequency plasma jet1994In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 3, no 4-6, p. 528-530Article in journal (Refereed)
  • 7.
    Forsberg, Pontus
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    Jorge, Eleonora de Oliveira
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Nyholm, Leif
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Nikolajeff, Fredrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    Karlsson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    Fabrication of boron doped diamond microband electrodes for electrochemical detection in a microfluidic channel2011In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 20, no 8, p. 1121-1124Article in journal (Refereed)
    Abstract [en]

    The manufacturing and electrochemical characterisation of an array of 20 boron doped nanocrystalline diamond (BNCD) microband electrodes for use in a poly(dimethylsiloxane) (PDMS) based microfluidic system are described. The electrodes were fabricated by plasma etching of a silicon oxide- and BNCD thin film coated silicon wafer and the resulting surface structured silicon wafer was subsequently bonded to the PDMS so that the BNCD microband electrodes were located within the PDMS microchannel. The electrochemical performance of the BNCD electrodes was studied and the electrodes were found to exhibit significantly better stability than previously employed gold microband arrays.

  • 8.
    Forsberg, Pontus
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    Karlsson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    High aspect ratio optical gratings in diamond2013In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 34, p. 19-24Article in journal (Refereed)
    Abstract [en]

    In this paper we describe a process for fabricating high aspect ratio gratings in single- or polycrystalline diamond with the high precision required by micro-optics. Nanoimprint lithography with a soft stamp and several layers of hard masks allowed for rapid and accurate replication of patterns written by e-beam or laser into thick Al masks on diamond substrates as large as 2 cm in diameter. Vertical sidewalls in the mask were crucial for avoiding microvilli formation during diamond plasma etching and were achieved by etching and oxidizing the Al mask in cycles. Circularly symmetric half-wave plates for wavelength bands around 4 and 11 mu m were fabricated with deep circular gratings on one side and antireflective gratings on the other.

  • 9.
    Hammersberg, Johan
    et al.
    ABB Corporate Research, Department of Materials and Chemical Engineering, 721 78 Vasteras, Sweden.
    Isberg, Jan
    ABB Corporate Research, Department of Materials and Chemical Engineering, 721 78 Vasteras, Sweden.
    Johansson, E.
    ABB Corporate Research, Department of Materials and Chemical Engineering, 721 78 Vasteras, Sweden.
    Lundström, T.
    ABB Corporate Research, Department of Materials and Chemical Engineering, 721 78 Vasteras, Sweden.
    Hjortstam, O.
    ABB Corporate Research, Department of Materials and Chemical Engineering, 721 78 Vasteras, Sweden.
    Bernhoff, Hans
    ABB Corporate Research, Department of Materials and Chemical Engineering, 721 78 Vasteras, Sweden.
    Injection dependent long carrier lifetimes in high quality CVD diamond2001In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 10, no 3-7, p. 574-579Article in journal (Refereed)
    Abstract [en]

    In this paper we report an experimental study of photocurrent mobility x lifetime products and free carrier lifetimes in CVD grown polycrystalline diamond of various qualities. The investigated samples are low impurity samples, nitrogen content similar to 10(15) cm(-3), with an average grain size ranging from 25 mum up to 110 mum. This large difference in average grain size makes it possible to distinguish effects due to Lifetime limiting trapping and recombination defect centers inside the grains from effects caused by defect centers at grain boundaries. At low carrier densities, < 10(13) cm(-3) the effective free carrier lifetime is in the sub-nanosecond to nanosecond range in all samples due to intra-grain trapping and recombination centers. At high carrier densities, > 10(13) cm(-3), the intra-grain centers becomes saturated and the effective lifetime becomes predominately given by carrier diffusion to and recombination at the defects related to the grain boundaries. Hence, the effective lifetime at high carrier densities is strongly related to the average grain size and increases up to several tens of nanoseconds, in samples with a large average grain size, whereas it remains in the nanosecond range for samples with small average grain size. In addition, we observe a lower mobility x lifetime product and decay constant with increasing nitrogen content, clearly showing the negative influence of nitrogen and nitrogen-related defects on these important material parameters.

  • 10.
    Isberg, Jan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
    Majdi, Saman
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
    Gabrysch, Markus
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
    Friel, I.
    Balmer, R. S.
    A lateral time-of-flight system for charge transport studies2009In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 18, no 9, p. 1163-1166Article in journal (Refereed)
    Abstract [en]

    A measurement system for lateral ToF charge carrier transport studies in intrinsic diamond is described. In the lateral ToF geometry, carriers travel close to the sample surface and the system is therefore particularly suited for studies of thin layers as well as the influence of different surface conditions on transport dynamics. A 213nm pulsed UV laser is used to create electron-hole pairs along a line focus between two parallel metal electrodes on one surface. The use of reflective UV-optics with short focal length allows for a narrow focal line and also for imaging the sample in UV or visible light without any dispersion. A clear hole transit was observed in one homoepitaxial single crystalline diamond film for which the substrate was treated by a Ar/Cl plasma etch prior to deposition. The hole transit signal was sufficiently clear to measure the near-surface hole drift mobility of about 860cm2/Vs across a contact spacing of 0.3mm.

  • 11.
    Khatibi, Zahra
    et al.
    Iran Univ Sci & Technol, Dept Phys, Tehran 1684613114, Iran.
    Namiranian, Afshin
    Iran Univ Sci & Technol, Dept Phys, Tehran 1684613114, Iran.
    Parhizgar, Fariborz
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Materials Theory. Inst Res Fundamental Sci IPM, Sch Phys, Tehran 193955531, Iran.
    Strain impacts on commensurate bilayer graphene superlattices: Distorted trigonal warping, emergence of bandgap and direct-indirect bandgap transition2019In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 92, p. 228-234Article in journal (Refereed)
    Abstract [en]

    Due to low dimensionality, the controlled stacking of graphene films and their electronic properties are susceptible to environmental changes including strain. The strain-induced modification of the electronic properties such as the emergence and modulation of bandgaps crucially depends on the stacking of the graphene films, However, to date, only the impact of strain on electronic properties of Bernal and AA-stacked bilayer graphene has been extensively investigated in theoretical studies. Exploiting density functional theory and tight-binding calculation, we investigate the impacts of in-plane strain on two different classes of commensurate twisted bilayer graphene (TBG) which are even/odd under sublattice exchange (SE) parity. We find that the SE odd TBG remains gapless whereas the bandgap increases for the SE even TBG when applying equibiaxial tensile strain. Moreover, we observe that for extremely large mixed strains both investigated TBG superstructures demonstrate direct-indirect bandgap transition.

  • 12.
    Kovi, Kiran Kumar
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
    Balmer, Richard S.
    Global Innovat Ctr, Element Six Ltd, Didcot OX11 0QR, Oxon, England.
    Isberg, Jan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity.
    Semi-isotropic surface etching of diamond using a Faraday cage2015In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 58, p. 185-189Article in journal (Refereed)
    Abstract [en]

    Etching of diamond is one of the most important process steps to realize diamond based devices. Isotropic etching in diamond yielding a high etch rate is challenging owing to its material properties. In the current study, single-crystalline diamond is etched using a Faraday cage that acts as the mask to attain semi-isotropic etching. An oxygen/chlorine plasma discharge with a pressure of 10 mTorr is used. The etching process is optimized by varying the applied plasma power, and the substrate bias together with varying parameters such as the thickness of the mask, the mask-to-diamond surface distance and the diameter of the holes in the mask. After optimization, semi-isotropic etched surface profiles up to a depth of 5 μm with an etch rate of 80 nm/min and surface roughness close to that of the unetched surface are achieved.

  • 13.
    Larsson, Karin
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Lunell, Sten
    Adsorption of Halogen-Containing Methane on Diamond1998In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, p. 1138-Article in journal (Refereed)
  • 14.
    Larsson, Karin
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Lunell, Sten
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Ab Initio Study of Hydrocarbons on Diamond (111)1993In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 2, p. 949-Article in journal (Refereed)
  • 15.
    Rashid, S. J.
    et al.
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK.
    Tajani, A.
    Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK.
    Coulbeck, L.
    Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK.
    Brezeanu, M.
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK.
    Garraway, A.
    Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK.
    Butler, T.
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK.
    Rupesinghe, N. L.
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK.
    Twitchen, D. J.
    Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK.
    Amaratunga, G. A. J.
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK.
    Udrea, F.
    Department of Engineering, University of Cambridge, Trumpington Street, Cambridge CB2 1PZ, UK.
    Taylor, P.
    Dynex Semiconductors Ltd., Doddington Road, Lincoln LN6 3LF, UK.
    Dixon, M.
    Element Six Ltd., King's Ride Park, Ascot, Berkshire SL5 8BP, UK.
    Isberg, Jan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. Avdelningen för elektricitetslära och åskforskning.
    Modelling of single-crystal diamond Schottky diodes for high-voltage applications2006In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 15, p. 317-323Article in journal (Refereed)
    Abstract [en]

    The modelling of Schottky m-i-p(+) (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond Substrates is reported. Variations in intrinsic layer thickness, Schottky metal type and operating temperature have been included in the analysis. Numerical models that take into account the activation of dopants, concentration and temperature dependant mobility and avalanche coefficients have been derived to successfully simulate experimental diamond devices.

  • 16.
    Ruuska, Henna
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Larsson, Karin
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Surface reactivities of (111), (100), and (110) planes of c-BN: A quantum mechanical approach2007In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 16, no 1, p. 118-123Article in journal (Refereed)
    Abstract [en]

    Surface reactivities of the three low-index planes (111), (100), and (110) of cubic boron nitride were theoretically investigated using density functional theory under periodic boundary conditions. Surface energies for non-terminated (bulk vs. optimized structure) and H-terminated (optimized structure) surfaces were calculated. The optimized structure is identical to the local low-energy structure closest to the initial bulk geometry. The adsorption process of hydrogen atoms on the various surface planes was also examined. On the basis of these calculations, the orders of reactivities for the cubic BN planes are (110) > (100) > (111) (bulk) and (100) > (110) > (111) (optimized) for non-terminated surfaces. The most reactive form of the (110) surface (i.e. bulk structure) became the most stable one when the surface was completely terminated with H species.

  • 17.
    Shuainan, Zhao
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Karin, Larsson
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    First principle study of the attachment of graphene onto non-doped and doped diamond (111)2016In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 66, p. 52-60Article in journal (Refereed)
    Abstract [en]

    Density function theory (DFT) calculations have in the present study been used to study the adhesion of a graphene monolayer onto a non-, B-, or N-doped diamond (111) surface. Semiempirical dispersion corrections were used to take the Van-der-Waals corrections into consideration. In case of non-doped diamond as a substrate, DFT calculations (based on the local density approximation (LDA)) have shown a strong binding between graphene and the diamond (111) surface at a shorter distance (2.47 Å). The binding energy was − 14.5 kJ/mol per Cgraphene atom. In comparison, the generalized gradient spin density approximation (GG(S)A) was found to predict a weaker (− 9.6 kJ/mol) interfacial bond at a distance of 3.10 Å. For the situation with B-, or N-, doped diamond, the optimized shorter diamond-graphene distance was found to be 3.01 and 3.24 Å, respectively. The corresponding adhesion energies per Cgraphene atom was − 9.9 kJ/mol (B-doping) and − 9.6 kJ/mol (N-doping), which are quite similar to the non-doped situation (− 9.6 kJ/mol). For all situations in the present study, the graphene layer was found to remain its aromatic character. However, a minor charge transfer was observed to take place from the graphene adlayer towards the non-doped and doped diamond (111) substrates.

  • 18.
    Van Regemorter, T.
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
    Larsson, Karin
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
    Effect of substitutional N on the diamond CVD growth process: A theoretical approach2008In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 17, no 7-10, p. 1076-1079Article in journal (Refereed)
    Abstract [en]

    For both (111) and (100) diamond surface orientations, one C atom within the first or second surface carbon layer has substitutionally been replaced by an N atom. The effects of this impurity on CH3 adsorption and H abstraction from a newly adsorbed CH3 have been carefully investigated by using ultra-soft pseudo-potential density functional theory (DFT) under periodic boundary conditions. The effects of N at various positions within the two atomic layers were especially studied. It was generally found that nitrogen in the first atomic layer will never affect the initial growth reactions. An exception exist for the dopant in one of the three studied positions within the (100) surface, where a beta-scission rearrangement is observed. When N is positioned within the second carbon layer for both surface orientations with all surface carbons H-terminated (i.e. no surface radicals), nitrogen is moving off-site and one of the N-C bonds is thereby broken. On the other hand, when a radical is present oil the surface (formed by the abstraction of one Surface H), N move back on-site and one electron is transferred from N to the surface C radical with a resulting electron lone pair fort-nation. When CH2 is bonded to the surface as a result of gaseous H abstraction from the adsorbed CH3 species and with N directly bonded to the surface carbon onto which CH3 is initially adsorbed, a beta-scission rearrangement is also observed.

  • 19.
    Van Regemorter, Tanguy
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
    Larsson, Karin
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
    Effect of co-adsorbed dopants on initial diamond growth steps: H abstraction from an adsorbed CH32009In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 18, no 9, p. 1152-1156Article in journal (Refereed)
    Abstract [en]

    The effect induced by a neighbouring co-adsorbed dopant on H abstraction from an adsorbed CH3 species on diamond has been investigated by using an ultra-soft pseudo-potential density functional theory (DFT) method under periodic boundary conditions. Both the (100) and (111) diamond surface orientations were considered with various types of dopants in two different hydrogenated forms; AHx (A = N, B, S, or P; X = 0 or 1 for S; X = 1 or 2 for N, B and P, and X = 2 or 3 for C). The H abstraction by gaseous radical H was found to be energetically favoured by the presence of the dopants in all of their different hydrogenated forms. For NH2, SH, or PH2, this effect is induced by a destabilisation of the diamond surface by sterical repulsions between the adsorbed growth species CH3 and the co-adsorbed dopant. For BH2 and the dopants in their radical form, the abstraction reaction is favoured due to the formation of a new covalent bond between the dopant and the co-adsorbed CH2 (product of the abstraction reaction), which strongly stabilises the surface after the abstraction process.

  • 20.
    Vargas Catalan, Ernesto
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
    Forsberg, Pontus
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
    Absil, Olivier
    Université de Liège, Belgium.
    Karlsson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
    Controlling the profile of high aspect ratio gratings in diamond2016In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 63, p. 60-68Article in journal (Refereed)
    Abstract [en]

    Diamond is an excellent material for infrared optics and for applications in harsh environments. Some of those desirable properties, i.e. hardness and chemical inertness, also make it a challenging material to machine and etch. In this study we have tested a wide range of etch parameters in an inductively coupled plasma etcher, in order to produce highly controlled, high aspect ratio gratings in diamond. We discuss the effects of pressure, bias power, and some gas mixture variation (pure oxygen and argon-oxygen) on the etch results and how it im- pacts the etch mask sputtering and redeposition. We also present a method for applying a fresh aluminum mask, in order to etch even deeper optical grating. Gratings with aspect ratios as high as 1:13.5 have been achieved with a 1.42 μm grating period. 

  • 21.
    Zhao, Jie
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Northwest Univ Xian, Key Lab Synthet & Nat Funct Mol Chem, Minist Educ, Coll Chem & Mat Sci, Xian 710069, Shaanxi, Peoples R China.
    Zeng, Shuangshuang
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wu, Biao
    Northwest Univ Xian, Key Lab Synthet & Nat Funct Mol Chem, Minist Educ, Coll Chem & Mat Sci, Xian 710069, Shaanxi, Peoples R China.
    Zhang, Shi-Li
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Zhang, Zhi-Bin
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Re-organized graphene nanoplatelet thin films achieved by a two-step hydraulic method2018In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 84, p. 141-145Article in journal (Refereed)
    Abstract [en]

    Film deposition of graphene nanoplatelets (GNPs) from dispersion via casting and printing approaches features cost- and material-efficiency, however, it usually suffers from poor uniformity, rough surface and loose flake stacking due to adverse effect of hydraulic force. Here, a simple two-step method exploiting hydraulic force is presented to readily deliver GNP films of improved quality from an aqueous dispersion. While as-deposited GNP films exhibit the aforementioned film defects, the hydraulic force in the subsequent step constituting soaking in water and drying leads to an efficient re-organization of the individual GNPs in the films, The majority of GNPs thus are oriented horizontally and closely stacked. As a result, densified, smoothened and homogenized GNP thin films can be readily achieved. The GNP re-organization reduces resistivity from > 1 Omega cm to 10(-2) Omega cm. The method developed is universally applicable to solution-phase film deposition of 2D materials.

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