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  • 1.
    Avendano, Esteban
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Azens, A.
    Niklasson, Gunnar A.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Granqvist, Claes-Göran
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Sputter Deposited Electrochromic Films and Devices Based on These: Progress on nickel-oxide-based films2007In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 138, no 2, p. 112-117Article in journal (Refereed)
    Abstract [en]

    This paper introduces electrochromic (EC) devices, capable of changing their optical absorption under charge insertion/extraction, and some of the required materials. Special attention is given to EC nickel-oxide-based films, for which we discuss sputter deposition and ensuing optical and structural properties. The paper is concluded with some recent results for practical foil-based devices.

  • 2. Kuzmych, Oleksandr
    et al.
    Johansson, Erik M. J.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Physical Chemistry.
    Nonomura, Kazuteru
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Physical Chemistry.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Skompska, Magdalena
    Hagfeldt, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Physical Chemistry.
    Infiltration of Spiro-MeOTAD hole transporting material into nanotubular TiO2 electrode for solid-state dye-sensitized solar cells2014In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 187, p. 67-74Article in journal (Refereed)
    Abstract [en]

    TiO2 nanotubes grown by anodic oxidation of Ti thin film deposited on conducting transparent fluoride-doped tin oxide (FTO) substrate were used as a unique geometrically organized template to study the infiltration of Spiro-MeOTAD hole transporting material (HTM) inside straight pores. The TiO2 nanotube (TNT) array electrode was compared with a mesoporous one in terms of loading with an organic dye of high extinction coefficient. It was shown that it is possible to build a working solid state dye sensitized solar cell device with such a combination of materials and its performance was compared with a device in which the solid state HTM was replaced by a liquid state electrolyte. 

  • 3. Vines, L
    et al.
    Monakhov, EV
    Jensen, Jens
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
    Kuznetsov, A Yu
    Svensson, BG
    Formation and annealing behavior of prominent point defects in MeV ion implanted n-type epitaxial Si2009In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 159-160, p. 177-181Article in journal (Refereed)
    Abstract [en]

    Samples of epitaxially grown n-type Si have been implanted with low doses (< 1 x 10(9) cm(-1)) of He, C, Si, and I ions using energies from 2.75 to 48 MeV. Deep level transient spectroscopy (DLTS) analysis of the implanted samples reveals a stronger signal for the signature of the singly negative charge state of the divacancy (V-2(-/0)) as compared to that of the doubly negative charge state of the divacancy (V-2(=/-)). Isochronal annealing for 20 min ranging from 150 to 400 degrees C results in a gradual decrease ill the DLTS peak amplitude of the V-2(-/0) signature, accompanied by an increase in the peak amplitudes of both the vacancy oxygen pair (VO) and the V-2(=/-) levels, as well as an increase in the carrier Capture rates for the levels. A model based on local compensation of charge carriers front individual ion tracks is proposed in order to explain the results, involving two fractions of V-2: (1) V-2 centers localized in regions with high defect density around the ion track (V-2(dense)) and (2) V-2 centers located in regions with a low defect density (V-2(dilute)).

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