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  • 1.
    Bauer, A. D.
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Herranen, Merja
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Ljungcrantz, H
    Sundgren, J. E.
    Corrosion behaviour of monocrystalline titanium nitride1997In: Surface and Coatings Technology, Vol. 91, no 3, p. 208-214Article in journal (Refereed)
    Abstract [en]

    The corrosion behaviour of monocrystalline and highly textured TiN films deposited onto single crystalline MgO has been investigated. It was found that films with high defect concentrations and elements of polycrystallinity had a reduced corrosion resistance. These films had low corrosion potentials and high critical and passive current densities. For high quality films the [110]- and [111]-orientations generally displayed better corrosion properties than films with [100]-orientation. Corrosion had different effects on films of different orientations: On [100]-oriented films loose rectangularly shaped flakes were observed. [110]-oriented films cracked because of compressive stresses, which in many cases caused the films to peel off during corrosion. On [111]-oriented films, finally, triangular pits were detected after corrosion. Films with high corrosion potentials had low values of critical and passive current densities. Non-destructive electrochemical analysis in combination with defect analysis can thus be used to predict the behaviour of these films on anodic polarisation.

  • 2. Bucur, R.V
    et al.
    Mecea, V.M
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    EQCM with air-gap exitation electrode. Calibration tests with copper and oxygen coatings2003In: Electrochimica Acta, no 48, p. 3431-3438Article in journal (Refereed)
  • 3. Carbone, M
    et al.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorgansik kemi.
    Diamond Nucleation on Hexagonal Boron Nitride: A Theoretical Investigation of the Influence of CH3 and Na Substituents1998In: J. Phys. Chem., Vol. 102, no 30, p. 5866-Article in journal (Refereed)
    Abstract [en]

    The effect of CH3 and Na on diamond nucleation on hexagonal boron nitride (h-BN) was investigated theoretically by using the DFT method. The methyl and sodium species were used as substituents on zigzag edge atoms of the basal plane. Outgrowths correspon

  • 4. Carbone, M
    et al.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorgansik kemi.
    Diamond Nucleation on Hexagonal Boron Nitride: A Theoretical Investigation of the Influence of Nearest Substituents1997In: J. Phys. Chem., Vol. 101, no 9445Article in journal (Refereed)
  • 5.
    Elihn, K
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Otten, F
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Kruis, FE
    Fissan, H
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Nanoparticle formation by laser-assisted photolysis of ferrocene.1999In: NANOSTRUCTURED MATERIALS, ISSN 0965-9773, Vol. 12, no 1-4, p. 79-82Article in journal (Refereed)
    Abstract [en]

    Laser-assisted formation of iron-containing nanoparticles has been performed by photolytic dissociation of ferrocene vapour by a pulsed ArF excimer laser at 193 nm. The process was carried out at atmospheric pressure, either in an inert atmosphere of argo

  • 6.
    Elihn, Kristina
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. strukturkemi.
    Otten, F
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. oorganisk kemi.
    Heszler, Peter
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry.
    Kruis, FE
    Fissan, H
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. oorganisk kemi.
    Size distributions and synthesis of nanoparticles by photolytic dissociation of ferrocene2001In: APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, ISSN 0947-8396, Vol. 72, no 1, p. 29-34Article in journal (Refereed)
    Abstract [en]

    Iran-containing nanoparticles were made by laser-assisted (ArF excimer laser, lambda = 193 nm) photolytic dissociation of ferrocene (Fe(C5H5)(2) or FeCp2) in argon and an oxygen/argon gas mixture. The particle-size distributions were obtained on-line by u

  • 7.
    Herranen, Merja
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    An electrochemical quartz crystal microbalance and in situ SFM study of Ti in sulphuric acid2001In: CORROSION SCIENCE, ISSN 0010-938X, Vol. 43, no 2, p. 365-379Article in journal (Refereed)
    Abstract [en]

    Anodic oxidation of titanium in sulphuric acid has been studied. Morphological changes of the electrode were imaged in situ with scanning force microscopy in the 1-5 mum range. The surface roughness decreases with increasing potential. Mass changes due to

  • 8.
    Herranen, Merja
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Delblanc-Bauer, A
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Bunshah, R. F.
    Corrosion properties of thin molybdenum silicide films1997In: Surface and Coatings Technology, Vol. 96, no 2-3, p. 245-254Article in journal (Refereed)
    Abstract [en]

    The corrosion properties of sputtered molybdenum and molybdenum silicide films in hydrochloric acid (HCl) have been studied by means of potentiodynamic measurements. Contributions from the substrate to the corrosion behaviour was avoided by depositing the films on inert aluminium oxide (Al2O3). The compositions studied were Mo, MoSi0.58, MoSi1.04, MoSi1.4 and MoSi1.9–2.1. Characterisation of the sampies was made by X-ray diffraction (XRD) and scanning electron microscopy (SEM) before and after corrosion. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) were used to analyse the polarised films. Corrosion of M3Si was found in the molybdenum-rich samples (MoSi0.58) containing the two phases Mo3Si and Mo5Si3. Polarisation curves for these films showed one passivation peak at 228 mV vs. the saturated calomel electrode (SCE). The MoSi1.9–2.1 films had the best corrosion properties of the films studied. This composition had three passivation peaks, at about 154, 305 and 1850 mVSCE, respectively. In the silicon-rich samples, containing the phases MoSi2 and Mo5Si3, preferentiai corrosion of Mo5Si3 was found. All the samples containing the disilicide phase showed at least two passivation peaks. XPS and AES studies on the passive films formed on the samples at the two first passivation peaks indicate that both peaks are due to oxidation of silicon- and molybdenum-containing species. The amount of molybdenum in the outermost layer is increased after the second peak.

  • 9.
    Herranen, Merja
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Ljungcrantz, H
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Sundgren, J-E
    Delblanc Bauer, A
    Corrosion behaviour of monocrystalline titanium nitride1997In: Surface and Coatings Technology, Vol. 91, no 3, p. 208-214Article in journal (Refereed)
  • 10.
    Herranen, Merja
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Nordin, M
    Technology, Department of Materials Science. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    In situ scanning force microscopy study of TiN layers in sulphuric acid1997In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, ISSN 1071-1023, Vol. 15, no 6, p. 1865-1870Article in journal (Refereed)
    Abstract [en]

    Morphological changes of sputter-deposited TiN films in 0.1 M sulphuric acid have been followed in situ with scanning force microscopy at different potentials. Disappearance of small structures was observed with increasing potential up to 1.2 V. A furthe

  • 11.
    Herranen, Merja
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Wiklund, U
    Technology, Department of Materials Science. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Hogmark, S
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Corrosion behaviour of Ti/TiN multilayer coated tool steel1998In: SURFACE & COATINGS TECHNOLOGY, ISSN 0257-8972, Vol. 99, no 1-2, p. 191-196Article in journal (Other scientific)
    Abstract [en]

    The corrosion behaviour of Ti/TiN multilayer coated tool steel has been investigated by potentiodynamic measurements in 0.1 M H2SO4 and compared with single layer coatings of Ti and TiN, respectively. All the coatings had a total thickness of about 1 mu

  • 12.
    Heszler, Peter
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Lu, J
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Amorphous carbon film deposition by laser induced C60 fragmentation1997In: Applied Surface Science, Vol. 109, p. 457-461Article in journal (Refereed)
    Abstract [en]

    It is demonstrated that a pure carbon (fullerene) precursor, C60, is appropriate for laser-induced carbon film deposition. Amorphous carbon films were obtained on Si and SiO2 substrates upon ArF excimer laser induced fragmentation of gas phase C60. The depositions were performed in Ar and H2 ambient in a hot-wall reactor at 550°C. Strong C2 emission bands were observed by optical emission spectroscopy during the deposition process indicating that C2 dimers are used for film formation, however, thermal decomposition of C58, C56, etc. high-mass fragments may also contribute to the layer development. Raman and TEM studies showed amorphous (highly disordered, turbostratic) character of the films. Optical absorption spectroscopy indicated semiconductor feature of the layers with optical band gap of 0.7 and 0.9 eV for the films deposited in Ar and H2 ambient, respectively. For the films deposited in H2 atmosphere, changes in the Raman spectrum and an upshift of the optical band gap of the layer indicate amorphous hydrogenated film with diamond-like character, however, degree of the sp3 hybridisation was estimated to be low. The deposition rate was measured to be 200 Å/min at 500°C and 400 mJ/cm2 laser fluence. AFM measurements showed smooth films with low surface roughness, 1 nm on 1 μm scale length.

  • 13.
    Heszler, Peter
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Elihn, K
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Optical characterisation of the photolytic decomposition of ferrocene into nanoparticles2000In: Applied Physics A, Vol. 70, p. 613-616Article in journal (Refereed)
    Abstract [en]

    Abstract. Optical emission from the photolytic dissociation of ferrocene Fe(C5H5)2, often abbreviated as FeCp2, in argon atmosphere was studied. The dissociation was performed by using an ArF excimer laser, operating at a wavelength of 193 nm. Two pressure regions were examined. At low (0.1 mbar) pressure, several emission lines of Fe could be identified, however no C, C2, or CH emission lines/bands were found. At a higher (20 mbar) pressure of the FeCp2/Ar gas mixture, a broadband emission identified as blackbody radiation was observed. This blackbody radiation originates from nanoparticles with a mean size of 30 nm, which consist of both metallic iron and amorphous carbon. The initial colour temperature of the particles was 2600 K.

  • 14.
    Jogi, Indrek
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry. Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia..
    Jacobsson, T. Jesper
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Fondell, Mattis
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Watjen, Timo
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Boman, Mats
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Edvinsson, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Phase Formation Behavior in Ultrathin Iron Oxide2015In: Langmuir, ISSN 0743-7463, E-ISSN 1520-5827, Vol. 31, no 45, p. 12372-12381Article in journal (Refereed)
    Abstract [en]

    Nanostructured iron oxides, and especially hematite, are interesting for a wide range of applications ranging from gas sensors to renewable solar hydrogen production. A promising method for deposition of low-dimensional films is atomic layer deposition (ALD). Although a potent technique, ALD of ultrathin films is critically sensitive to the substrate and temperature conditions where initial formation of islands and crystallites influences the properties of the films. In this work, deposition at the border of the ALD window forming a hybrid ALD/pulsed CVD (pCVD) deposition is utilized to obtain a deposition less sensitive to the substrate. A thorough analysis of iron oxide phases formation on two different substrates, Si(100) and SiO2, was performed. Films between 3 and SO rim were deposited and analyzed with diffraction techniques, high-resolution Raman spectroscopy, and optical spectroscopy. Below 10 nm nominal film thickness, island formation and phase dependent particle crystallization impose constraints for deposition of phase pure iron oxides on non-lattice-matching substrates. Films between 10 and 20 nm thickness on SiO2 could effectively be recrystallized into hematite whereas for the corresponding films on Si(100), no recrystallization occurred. For films thicker than 20 nm, phase pure hematite can be formed directly with ALD/pCVD with very low influence of the substrate on either Si or SiO2. For more lattice matched substrates such as SnO2:F, Raman spectroscopy indicated formation of the hematite phase already for films with 3 rim nominal thickness and clearly for 6 nm films. Analysis of the optical properties corroborated the analysis and showed a quantum confined blue-shift of the absorption edge for the thinnest films.

  • 15.
    Johansson, Anders
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Experimental Physics. oorganisk kemi.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Experimental Physics.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Experimental Physics. oorganisk kemi.
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Experimental Physics. oorganisk kemi.
    Deposition of palladium nanoparticles on the pore walls of anodic alumina using sequential electroless deposition2004In: Journal of Applied Physics, Vol. 96, no 9, p. 5189-5194Article in journal (Refereed)
    Abstract [en]

    Palladium nanoparticles were deposited using a sequential electroless deposition technique on the pore walla of nanoporous anodic alumina. For the particle deposition a Pd(NH3)42+ solution was soaked in the alumina membrane and a heated air flow was applied in order to reduce the palladiumcomplex to palladium metal nanoparticles. By repeating the deposition process the size of the nanoparticles could be tailored in this investgation between 6 and 11 nm. The size of the nanoparticles was also affected by the concentration of the Pd(NH3)42+ solution i.e., highconcentration yielded larger particles mean diameters. The samples were investigated using high resolution scanning electron microscopy, x-ray diffraction (XRD), inductively coupled plasma with a mass spectometer, high resolution transmission electron microscopy , and energy dispersive spectroscopy (EDS). Analysis revealed narrow size distributions of the particles as well as uniform particle coverage of the pore walls. No by-products were observed with EDS, and with the XRD analysis the metallic palladium crystallinity was confirmed.

  • 16.
    Johansson, Anders
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Törndahl, Tobias
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Ottosson, Mikael
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Copper nanoparticles deposited inside the pores of anodized aluminium oxide using atomic layer deposition2003In: Materials Science and Engineering, Vol. C, no 23, p. 823-826Article in journal (Refereed)
  • 17. JOHANSSON, E
    et al.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Physics, Department of Physics and Materials Science, Physics II. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Physics, Department of Physics and Materials Science, Physics II. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. oorgansik kemi.
    DIAMOND NUCLEATION ON HEXAGONAL BORON-NITRIDE - AN AB-INITIO STUDY OF ENERGETICS1995In: JOURNAL OF PHYSICAL CHEMISTRY, ISSN 0022-3654, Vol. 99, no 34, p. 12781-12785Article in journal (Other scientific)
    Abstract [en]

    The nucleation of diamond on the zigzag and armchair edge atoms of the basal plane of hexagonal boron nitride (h-BN) has been investigated theoretically by using ab initio molecular orbital theory. The calculations have included the effects of electron co

  • 18.
    Larsson, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Incorporation of C into growth steps of diamond (111)2001In: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, ISSN 0031-8965, Vol. 186, no 2, p. 319-330Article in journal (Refereed)
    Abstract [en]

    Different surface processes occuring during growth of diamond (111) have theoretically been investigated by using various quantum mechanical methods (including molecular dynamic simulations). A final incorporation of C-containing growth precursors into th

  • 19.
    Larsson, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Partial electron transfer during vapor growth of diamond on a (111) surface1999In: JOURNAL OF PHYSICAL CHEMISTRY B, ISSN 1089-5647, Vol. 103, no 14, p. 2735-2739Article in journal (Other scientific)
    Abstract [en]

    During diamond growth, surface vacancies are formed and diamond grows by adding carbon-carrying species to these vacancies. In the present investigation, the correlation between adsorption energies and accompanying partial electron transfer in the newly f

  • 20.
    Larsson, Karin
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Partial Electron Transfer during Vapor Growth of Diamond on a (111) Surface1999In: Journal of Physical Chemistry, Vol. 103, p. 2735-Article in journal (Refereed)
  • 21.
    Larsson, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Surface migration during diamond growth studied by molecular orbital calculations1999In: PHYSICAL REVIEW B-CONDENSED MATTER, Vol. 59, no 12, p. 8315-8322Article in journal (Refereed)
    Abstract [en]

    Migration of various important species (H, CH3, CH2, C2H, and C2H2) on a diamond (111) surface has been investigated theoretically, using a cluster approach and the second-order Møller-Plesset perturbation theory. The order of the energies (barriers) obtained for a single jump between two neighboring radical sites is CH2<H<C2H≈CH3 (52, 248, 350, and 353 kJ/mol, respectively). The C2H2 species is assumed to migrate by an alternating onefold and difold site adsorption to the surface. The corresponding barrier obtained for C2H2 is 186 kJ/mol, which is somewhere in between that of CH2 and H. The present type of surface migration of chemisorbed species will, with one exception, be energetically favorable in comparison to any desorption process. In the case of C2H2, a desorption process will be energetically favorable.

  • 22.
    Larsson, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Surface processes in cubic boron nitride growth: A theoretical study1999In: JOURNAL OF PHYSICAL CHEMISTRY B, ISSN 1089-5647, Vol. 103, no 31, p. 6533-6538Article in journal (Other scientific)
    Abstract [en]

    Various surface processes for the system B/N/H/F occurring during CVD growth of c-BN (111) have been investigated theoretically, using quantum mechanical methods. Both F and H species were found to be efficient as surface stabilizing agents. Mainly the H-

  • 23.
    Larsson, Karin
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Lunell, Sten
    An Ab Initio Study of the Nucleation of Diamond on the Edges of the Graphitic (111) Plane1994In: Journal of Physical Chemistry, p. 5019-Article in journal (Refereed)
  • 24.
    Larsson, Karin
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Lunell, Sten
    Nearest-Neighbour Influence on Hydrocarbon Adsorption on Diamond (111): Studied by Ab Initio Calculations1995In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, p. 10003-Article in journal (Refereed)
  • 25.
    Larsson, Karin
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Lunell, Sten
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Ab Initio Study of Hydrocarbons on Diamond (111)1993In: Diamond and related materials, ISSN 0925-9635, E-ISSN 1879-0062, Vol. 2, p. 949-Article in journal (Refereed)
  • 26.
    Larsson, Karin
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Lunell, Sten
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Adsorption of hydrocarbons on a Diamond (111) Surface: An Ab Initio Quantum Mechanical Study1993In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, no 4, p. 2666-Article in journal (Refereed)
  • 27.
    Leopold, Sofia
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Arrayet, J.C
    Bruneel, J.L
    Herranen, Merja
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Argoul, F
    Servant, L
    In Situ CRM Study of the Self-Oscillating Du-(II)-Lactate and Cu-(II)-Tartrate Systems2003In: J. Electrochem. Soc., Vol. 150, no 7, p. C472-C477Article in journal (Refereed)
  • 28.
    Leopold, Sofia
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. oorganisk kemi.
    Herranen, Merja
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. oorganisk kemi.
    Spontaneous potential oscillations in the Cu(II)/tartrate and lactate systems, aspects of mechanisms and film deposition2001In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 148, no 8, p. C513-C517Article in journal (Refereed)
    Abstract [en]

    Spontaneous oscillations in the cathode potential are observed in the alkaline Cu(II)/tartrate and lactate systems when applying current to the electrochemical cell. In the Cu(II)/tartrate system the oscillations induce formation of composite films of Cu

  • 29.
    Leopold, Sofia
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Herranen, Merja
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Nyholm, Leif
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    In situ pH measurement of the self-oscillating Cu(II)-lactate system using an electropolymerised polyaniline film as a micro pH sensor2003In: Journal of Electroanalytical Chemistry, Vol. 547, p. 45-52Article in journal (Refereed)
  • 30.
    Leopold, Sofia
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Schuchert, I.U.
    Lu, J.
    Toimil Molares, M.E.
    Herranen, Merja
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Electrochemical deposition of cylindrical Cu/Cu2O microstructures2002In: Electrochimica Acta, Vol. 47, p. 4393-4397Article in journal (Refereed)
  • 31.
    Lindahl, Erik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry. AB Sandvik Coromant R&D, Lerkrogsvagen 19, SE-1280 Stockholm, Sweden..
    Ottosson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Doping of metastable Cu3N at different Ni concentrations: Growth, crystallographic sites and resistivity2018In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 647, p. 1-8Article in journal (Refereed)
    Abstract [en]

    Copper nitride, Cu3N, is a metastable material whose properties can be changed considerably by doping with metals which opens for a variety of applications in several areas (sensors, electrical connects, batteries, memories, etc.). The present work is a systematic study in the system Cu-Ni-N of preferences regarding occupation of interstitial and substitutional crystallographic sites in the Cu3N structure as the metal dopant level increases and how the occupation influences growth behavior, texture, microstructure and resistivity. Ni doped Cu3N films of different chemical composition were grown by a gas-pulsed Chemical Vapor Deposition technique. The occupation of the different crystallographic sites of the Cu3N by the Ni atoms was obtained from analysis of X-ray diffraction data. At low Ni content, less than about 21% in metal content, Ni replaced the Cu atoms in the structure. In the intermediate Ni metal content range from about 21 to 40% the vacant centre position became available. After filling the centre position, substitution of Cu for Ni occurred up to a Ni content of about 80% (Cu0.8Ni3.2N) which is the solid solubility limit of Ni in Cu3N. The film resistivity decreased rapidly by adding nickel to the Cu3N structure from about 10(9)mu Omega.cm without any Ni doping to about 100 mu Omega.cm with 80% Ni in the metal content. After filling the centre position the change in resistivity when Cu atoms were substituted for Ni was very small. Finally, the growth mechanism, texture and microstructure changed significantly with the uptake of Ni atoms in the structure.

  • 32.
    Lindahl, Erik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Ottosson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Chemistry - Ångström, Inorganic Chemistry.
    Gas-Pulsed CVD for Film Growth in the Cu-Ni-N System2012In: Chemical Vapor Deposition, ISSN 0948-1907, E-ISSN 1521-3862, Vol. 18, no 1-3, p. 10-16Article in journal (Refereed)
    Abstract [en]

    A new ternary solid solution, Cu3-xNix+yN, is prepared by gas-pulsed CVD at 260 degrees C. Gas pulses of the precursor mixtures Cu(hfac)2+NH3 and Ni(thd)2+NH3, separated by intermittent ammonia pulses, are employed for the deposition of Cu3N and Ni3N, respectively. A few monolayers of the nitrides are grown in each CVD pulse and then mixed by diffusion to produce the solid solution. The metal content of the solid solution can be varied continuously from 100% to about 20% Cu, which means that the electrical properties can be varied from 1.6eV (band gap of Cu3N) to metallic (Ni3N). This is of interest for various applications, e.g., solar energy, catalysis, and microelectronics.

  • 33.
    Lindahl, Erik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Ottosson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Growth and stability of CVD Ni3N and ALD NiO dual layers2010In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 205, no 3, p. 710-716Article in journal (Refereed)
  • 34.
    Lindahl, Erik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Ottosson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    In situ study of nickel formation during decomposition of chemical vapor deposition Ni3N films2010In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 28, no 5, p. 1203-1209Article in journal (Refereed)
    Abstract [en]

    The thermal decomposition of Ni3N thin films, deposited by chemical vapor deposition on SrTiO3 (001) and Si (100) substrates, has been studied by in situ x-ray diffraction, as well as temperature-programed controlled gas emission in both inert and hydrogen atmospheres. The decomposition at inert atmosphere conditions starts at the film/substrate interface, which results in a high degree of ordering in the formed nickel film. In the H-2 atmosphere, the initial film ordering is less pronounced and the decomposition occurs from the film surface and downward. This means that by choosing the annealing atmosphere, inert or hydrogen, the formation of the Ni film can be localized to either the original nitride/substrate interface or to the surface of the nitride. The annealed films show a cube-on-cube growth with respect to the SrTiO3 (001) substrate. The film morphology after the annealing experiments resembles the one of the as-deposited films. The lowest resistivity value is measured for the films annealed in the H-2 atmosphere. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3478298]

  • 35.
    Lindstam, M
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Area selective laser chemical vapor deposition of diamond and graphite1997In: Applied Surface Science, Vol. 109, p. 462-466Article in journal (Refereed)
    Abstract [en]

    High quality diamond and graphite has been deposited area selectively on silicon substrates in a hot filament chemical vapor deposition reactor employing laser heating. A mixture of CH4 (1–3 vol%) and H2 was passed over a tantalum filament having a temperature of approximately 2200°C. A laser beam was used to raise the temperature locally on the substrate surface. By a proper choice of filament temperature, substrate background temperature and laser induced temperature, isolated islands of polycrystalline diamond or graphite could be deposited on the silicon substrate. The deposited diamond and graphite spots were characterized by micro-Raman spectroscopy, scanning electron microscopy and scanning force microscopy.

  • 36. Lindstam, M
    et al.
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorgansik kemi.
    Stenberg, G
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Area Selective Laser Chemical Vapour Deposition of Diamond1995In: Mat. Res. Soc. Symp. Proc. 397, 1995Conference paper (Refereed)
  • 37.
    Lu, Jun
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences.
    Aarik, Jaan
    Sundqvist, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry.
    Kukli, Kaupo
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry.
    Analytical TEM characterization of the interfacial layer between ALD Hf02 film and silicon substrate2005In: Journal of Crystal Growth, no 273, p. 510-514Article in journal (Refereed)
    Abstract [en]

    High-resolution transmission electron microscopy and electron energy loss spectrometry were used to characterize

    the interfacial layer formed between the silicon substrate and the HfO2 thin film grown by atomic layer deposition (ALD) from HfIU4 and O2. The interfacial layer was amorphous and contained SiO2 mixed with a small amount of elemental Si on the atomic level. The interfacial silicon oxide layer was mainly deposited at the beginning of the ALD process since its thickness was insensitive to the number of applied ALD cycles when increased from 50 to 1000.

  • 38. Martensson, P
    et al.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorgansik kemi.
    Atomic layer epitaxy of copper: an ab initio investigation of the CuCl/H-2 process - II. Reaction energies1999In: APPLIED SURFACE SCIENCE, ISSN 0169-4332, Vol. 148, no 1-2, p. 9-16Article in journal (Refereed)
    Abstract [en]

    Reaction energies for different reaction pathways in the CuCl/H-2 process occurring in the gas phase as well as on a Cu(111) surface have been calculated using Density Functional Theory. All reactions, occurring in the gas phase as well as in the solid/va

  • 39. McGinnis, Sean
    et al.
    Norin, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Jansson, Ulf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Use of oxygen-stabilized C60 films for selective chemical vapor deposition1997In: Applied Physics Letters, Vol. 70, no 5, p. 586-588Article in journal (Refereed)
    Abstract [en]

    Thin C60 films exposed to ultraviolet/visible light in the presence of oxygen were used as a selective mask for tungsten chemical vapor deposition on silicon substrates. An uptake of oxygen in the fullerene films as well as a significant increase in their thermal stability resulted from the simultaneous exposure to the radiation and oxygen. The thermal stability and inertness of these films to tungsten hexaflouride, which is readily reduced by silicon to form the metal at 350 °C, allowed selective deposition of tungsten in both ultrahigh vacuum and low pressure environments. X-ray photoelectron spectroscopy and x-ray fluorescence spectroscopy were used to characterize the tungsten deposited on the C60 mask and the unmasked silicon substrate.

  • 40.
    Mecea, Vasile Mihai
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Alm, Oscar
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Out-of-plane vibrations of quartz resonators used in quartz crystal microbalance measurements in gas phase2006In: Sensors and Actuators A, Vol. 125, no 2, p. 143-147Article in journal (Refereed)
    Abstract [en]

    The article reveals that shear-mode quartz crystal resonators, currently used in quartz crystal microbalance (QCM) measurements, exhibit an out-of-plane vibration without being in contact with a liquid. Laser assisted CVD was used to deposit carbon-nanoparticles on the surface of a quartz resonator. The in-plane, shear vibration of the quartz resonator, produces a mega-gravity acceleration which induces a sedimentation of the carbon-nanoparticles, while the out-of-plane vibration produces a mega-gravity acceleration, normal to the crystal surface, which induces an expelling of the deposited carbon-nanoparticles. The two opposite effects reveal a complex situation on the quartz resonator surface in QCM measurements.

  • 41.
    Mårlid, B
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Nucleation of c-BN from PECVD and TACVD growth species: a theoretical study2001In: Diamond and Related Materials, Vol. 10, no 3-7, p. 1363-1368Article in journal (Refereed)
    Abstract [en]

    The nucleation of cubic boron nitride (c-BN) on the zigzag edges (100) and (00) of the hexagonal BN (h-BN) prism plane has been theoretically investigated, using a cluster approach and the density functional theory (DFT). Different cubic outgrowths from the edge atoms have been modeled, and the total energies have been set in relation to the total energies for corresponding hexagonal counterparts. The outgrowths were assumed to be derived from the gaseous complexes X2BNH2 and XB(NH2)2 (X=Cl or H), experimentally observed in TACVD and PECVD reactors. It was found that the nucleation of cubic BN is energetically favorable compared to a continuous growth of hexagonal BN on the two edges investigated. The order of relative energy obtained for the various edges considered is; (00)>(100). Moreover, the Cl atoms showed the highest ability to stabilize the cubic nuclei, with one exception. However, the energetic differences between the two terminating species were rather small.

  • 42.
    Mårlid, Björn
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Chemical interaction of H2, Br2, and HBr with a-boron surfaces2001In: J. Phys. Chem., Vol. B105, p. 12797-12802Article in journal (Refereed)
  • 43. Mårlid, Björn
    et al.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorgansik kemi.
    Hydrogen and fluorine adsorption on the h-BN (001) plane1999In: J. Phys. Chem. B, Vol. 103, p. 7637-Article in journal (Refereed)
    Abstract [en]

    The adsorption of H or F species on B vs N atoms on the h-BN (001) surface has been investigated theoretically within the DFT method, using a cluster approach. Only the boron atoms were subjected to a local transformation from hexagonal to cubic phase. I

  • 44.
    Mårlid, Björn
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Nucleation of c-BN on hexagonal boron nitride2001In: Physical Review B, Vol. 64, p. 184107-Article in journal (Refereed)
  • 45. Mårlid, Björn
    et al.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorgansik kemi.
    Stabilising Effects of Hydrogen and Halogens on c-BN (111): A Theoretical Study1998In: Proceedings of the second symposium on III-V Nitride materials and processes Vol. 97-34, 1998Conference paper (Refereed)
  • 46. Mårlid, Björn
    et al.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorgansik kemi.
    Theoretical investigation of hydrogen- and halogen-terminated c-BN (111) clusters1999In: PHYSICAL REVIEW B-CONDENSED MATTER, ISSN 0163-1829, Vol. 60, no 23, p. 16065-16072Article in journal (Refereed)
    Abstract [en]

    The surface stabilizing properties of different species X (X = H, F, Cl, Br) on B(111) and N(111) c-BN cluster surfaces, have been investigated theoretically within:the density-functional theory method. Calculated adsorption energies indicated that all sp

  • 47.
    Mårlid, Björn
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Pettersson, U
    Technology, Department of Materials Science. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Ottosson, Mikael
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Atomic layer deposition of BN thin films2002In: Thin Solid Films, no 402, p. 167-171Article in journal (Refereed)
  • 48.
    Mårtensson, Per
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Atomic layer epitaxy of copper on tantalum1997In: Chemical Vapor Deposition, Vol. 3, no 1, p. 45-50Article in journal (Refereed)
    Abstract [en]

    The decreasing size and increasing complexity of the components in future microelectronics devices present a great challenge in the development of new deposition techniques. One method for the deposition of semiconductor materials which has gen erated co

  • 49.
    Mårtensson, Per
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Atomic layer epitaxy of copper: an ab initio investigation of the CuCl/H2 process I. Adsorption of CuCl on Cu(111)1998In: Applied Surface Science, Vol. 136, p. 137-146Article in journal (Refereed)
    Abstract [en]

    An ab initio investigation of the adsorption and disproportionation of copper(I)chloride on copper(111), two crucial processes in CuCl/H2 copper Atomic Layer Epitaxy is presented. Adsorption of CuCl is energetically most favourable on the two different three-fold adsorption sites with adsorption energies of 152 kJ mol−1. Adsorption on the two-fold bridge site is only 10 kJ mol−1 lower in adsorption energy than on the three-fold sites, whereas adsorption on the on-top site is endothermic by as much as 88 kJ mol−1. As previously noticed in an experimental study, adsorption is not limited by any energy barrier. The disproportionation was investigated for three different arrangements with the composition (CuCl)2. It was confirmed that the formation of (CuCl)2 in the gas phase is favourable, but contrary to earlier experimental findings, no indications of a disproportionation of CuCl could be found. Adsorption of the (CuCl)2 dimers was found to be energetically unfavourable implying that a dissociation to free CuCl molecules is required prior to adsorption.

  • 50.
    Mårtensson, Per
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Larsson, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Atomic layer epitaxy of copper: an ab initio investigation of the CuCl/H2 process III . Reaction barriers2000In: Applied Surface Science, Vol. 157, no 1-2, p. 92-100Article in journal (Refereed)
    Abstract [en]

    An ab initio investigation of the energy barriers for hydrogen reduction of CuCl on copper(111) surfaces, as well as in the gas phase, has been performed in the present investigation. It is concluded that the elimination of chlorine from CuCl by the addition of H2 proceeds via surface reactions between hydrogen and CuCl both adsorbed on Cu(111). The activation energy for the reaction between CuCl (adsorbed on a threefold site) and H (adsorbed on an adjacent on-top site) is only 53 kJ mol−1, i.e., almost identical to the reaction energy for this surface process. However, the CuCl+H surface reaction should presumably start with both species adsorbed in their preferred threefold sites. By assuming that H diffusion from threefold to top is not hindered by any barrier, the barrier energy for the most possible surface reaction is estimated to become 83 kJ mol−1. This value is in close correspondence to the experimental value of 85 kJ mol−1 that has been previously reported.

12 1 - 50 of 62
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