uu.seUppsala University Publications
Change search
Refine search result
1234 1 - 50 of 185
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Abermann, S.
    et al.
    Institute of Solid State Electronics, Vienna University of Technology.
    Efavi, J. K.
    Sjöblom, Gustaf
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lemme, M. C.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bertagnolli, E.
    Institute of Solid State Electronics, Vienna University of Technology.
    Impact of Al-, Ni-, TiN-, and Mo-metal gates on MOCVD-grown HfO2 and ZrO2 high-k dielectrics2007In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 47, no 4-5, p. 536-539Article in journal (Refereed)
    Abstract [en]

    In this work we compare the impacts of nickel (Ni), titanium-nitride (TiN), molybdenum (Mo), and aluminium (Al), gates on MOS capacitors incorporating HfO2- or ZrO2-dielectrics. The primary focus lies on interface trapping, oxide charging, and thermodynamical stability during different annealing steps of these gate stacks. Whereas Ni, Mo, and especially TiN are investigated as most promising candidates for future CMOS devices, Al acted as reference gate material to benchmark the parameters. Post-metallization annealing of both, TiN- and Mo-stacks, resulted in very promising electrical characteristics. However, gate stacks annealed at temperatures of 800 °C or 950 °C show thermodynamic instability and related undesirable high leakage currents.

  • 2.
    Abermann, S.
    et al.
    Institute for Solid State Electronics, Vienna University of Technology.
    Efavi, J. K.
    Advanced Microelectronic Center, Aachen.
    Sjöblom, Gustaf
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lemme, M. C.
    Advanced Microelectronic Center, Aachen.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bertagnolli, E.
    Institute for Solid State Electronics, Vienna University of Technology.
    Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric2007In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 84, no 5-8, p. 1635-1638Article in journal (Refereed)
    Abstract [en]

    We evaluate various metal gate/high-k/Si capacitors by their resulting electrical characteristics. Therefore, we process MOS gate stacks incorporating aluminium (Al), nickel (Ni), titanium-nitride (TiN), and molybdenum (Mo) as the gate material, and metal organic chemical vapour deposited (MOCVD) ZrO2 and HfO2 as the gate dielectric, respectively. The influence of the processing sequence - especially of the thermal annealing treatment - on the electrical characteristics of the various gate stacks is being investigated. Whereas post metallization annealing in forming gas atmosphere improves capacitance-voltage behaviour (due to reduced interface-, and oxide charge density), current-voltage characteristics degrade due to a higher leakage current after thermal treatment at higher temperatures. The Flatband-voltage values for the TiN-, Mo-, and Ni-capacitors indicate mid-gap pinning of the metal gates, however, Ni seems to be thermally unstable on ZrO2, at least within the process scheme we applied.

  • 3. Abermann, S
    et al.
    Efavi, J
    Sjöblom, Gustaf
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lemm, M
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bertagnolli, E
    Impact of Al-, Ni-, TiN-, and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-K dielectrics2006Conference paper (Refereed)
  • 4. Abermann, S.
    et al.
    Efavi, J.
    Sjöblom, Gustaf
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lemme, Max
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bertagnolli, E.
    Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric2006In: Presented at Int. Conf. on Micro- and Nano-Engineering, 2006Conference paper (Other academic)
  • 5. Abermann, Stephan
    et al.
    Sjöblom, Gustaf
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Efavi, Johnson
    Lemme, Max
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bertagnolli, Emmerich
    Comparative Study On The Impact Of TiN and Mo Metal Gates ON MOCVD-Grown HfO2 and ZrO2 High-k Dielectrics For CMOS Technology2006In: Proceedings of 28th International Conference on the Physics of Semiconductors (ICPS) / [ed] Wolfgang Jantsch, Friedrich Schäffler, 2006Conference paper (Refereed)
  • 6.
    Ahlberg, Patrik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Hinnemo, Malkolm
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Song, Man
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Gao, Xindong
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Zhang, Shi-Li
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Zhang, Zhi-Bin
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A two-in-one process for reliable graphene transistors processed with photolithography2015In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 20, article id 203104Article in journal (Refereed)
    Abstract [en]

    Research on graphene field-effect transistors (GFETs) has mainly relied on devices fabricated using electron-beam lithography for pattern generation, a method that has known problems with polymer contaminants. GFETs fabricated via photo-lithography suffer even worse from other chemical contaminations, which may lead to strong unintentional doping of the graphene. In this letter, we report on a scalable fabrication process for reliable GFETs based on ordinary photo-lithography by eliminating the aforementioned issues. The key to making this GFET processing compatible with silicon technology lies in a two-in-one process where a gate dielectric is deposited by means of atomic layer deposition. During this deposition step, contaminants, likely unintentionally introduced during the graphene transfer and patterning, are effectively removed. The resulting GFETs exhibit current-voltage characteristics representative to that of intrinsic non-doped graphene. Fundamental aspects pertaining to the surface engineering employed in this work are investigated in the light of chemical analysis in combination with electrical characterization.

  • 7.
    Ahlberg, Patrik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Hinnemo, Malkolm
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Zhang, Shi-Li
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Interface Dependent Effective Mobility in Graphene Field Effect Transistors2018In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 47, no 3, p. 1757-1761Article in journal (Refereed)
    Abstract [en]

    By pretreating the substrate of a graphene field-effect transistor (G-FET), a stable unipolar transfer characteristic, instead of the typical V-shape ambipolar behavior, has been demonstrated. This behavior is achieved through functionalization of the SiO2/Si substrate that changes the SiO2 surface from hydrophilic to hydrophobic, in combination with postdeposition of an Al2O3 film by atomic layer deposition (ALD). Consequently, the back-gated G-FET is found to have increased apparent hole mobility and suppressed apparent electron mobility. Furthermore, with addition of a top-gate electrode, the G-FET is in a double-gate configuration with independent top- or back-gate control. The observed difference in mobility is shown to also be dependent on the top-gate bias, with more pronounced effect at higher electric field. Thus, the combination of top and bottom gates allows control of the G-FET's electron and hole mobilities, i.e., of the transfer behavior. Based on these observations, it is proposed that polar ligands are introduced during the ALD step and, depending on their polarization, result in an apparent increase of the effective hole mobility and an apparent suppressed effective electron mobility.

  • 8.
    Anderås, Emil
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vallin, Örjan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Drift in thin film SOI piezoresistors2010In: Proc. of EUROSOI Workshop, 2010 Jan 25-27, Grenoble, France, 2010, p. 71-72Conference paper (Refereed)
  • 9.
    Anderås, Emil
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Resistance Electric Field Dependence and Time Drift of Piezoresistive Single Crystalline Silicon Nanofilms2009In: Proceedings of Eurosensors May 2009, Procedia Chemistry vol 1 (1), 2009, p. 80-83Conference paper (Refereed)
  • 10.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Analysis and improvments of high frequency substrate losses for RF MOSFETs2003In: Proceedings of IEEE SISPAD, 2003, p. 319-322Conference paper (Refereed)
  • 11.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors2004In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 48, no 5, p. 789-797Article in journal (Refereed)
    Abstract [en]

    High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. The results show that losses in devices made on low resistivity substrate occur through the substrate while losses in devices made on high resistivity substrate in the high frequency region occur along the surface through the device (source–drain). An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an improved device on high resistivity substrate.

  • 12.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Simulation and modeling of the substrate influence on the high frequency performance for RF LDMOS2003In: GHz2003 Symposium, Nov. 4-5, 2003Conference paper (Refereed)
  • 13.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Larsen, Mattias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Low Resistivity SOI Substrates for Improved Efficiency of RF Power-MOSFETs2004In: Proc of NATO Advanced Research Workshop on SOI, Kiev 25-29 April: Science and Technology of SOI structures and devices operating in a harsh environment, 2004Conference paper (Other academic)
  • 14.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Larsen, Mattias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Improved Efficiency for RF Power-MOSFETs using Low Resistivity SOI Substrates2005In: Proceedings of GHz2005 Symposium, 2005, p. 135-138Conference paper (Refereed)
  • 15.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Larsen, Mattias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Low Resistivity SOI for Improved Efficiency of LDMOS2006In: Proceedings of EUROSOI Workshop, March, 2006, p. 69-70Conference paper (Refereed)
  • 16.
    Ankarcrona, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    SPICE Modeling of High Voltage LDMOS Transistors2001In: The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001Conference paper (Refereed)
  • 17.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Sub-Circuit Based SPICE Model for High Voltage LDMOS Transistors2002In: Physica Scripta, no T101, p. 7-9Article in journal (Refereed)
  • 18.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Analysis of crosstalk in SOI substrates2005In: Proceedings of GHz2005 Symposium, 2005, p. 131-134Conference paper (Refereed)
  • 19.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Crosstalk Reduction Using Low Resistivity SOI2005In: Proceedings of EUROSOI Workshop, 2005, p. 129-130Conference paper (Refereed)
  • 20.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Efficient Crosstalk Reduction Using Very Low Resistivity SOI Substrate2005In: Proceedings of 35th ESSDERC, 2005, p. 233-236Conference paper (Refereed)
  • 21.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    High Power Efficiency using Very Low Resistivity SOI2007Conference paper (Refereed)
  • 22.
    Ankarcrona, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Eklund, Klas-Håkan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Low Resistivity SOI for Substrate Crosstalk Reduction2005In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 52, no 8, p. 1920-1922Article in journal (Refereed)
  • 23. Bengtsson, L
    et al.
    Angelov, I
    Zirath, H
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    An empirical high frequency large signal model for high voltage LDMOS transistors1998In: Proceedings of the IEEE European Microwave Conference, Vol.1, 1998, p. 733-738Conference paper (Refereed)
  • 24. Bengtsson, Lars
    et al.
    Garcia, Mikael
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    An On-Wafer De-Embedding Technique for Silicon Transistors at Microwave Frequencies1999In: IEEE ICMTS, Gothenburg, Sweden, 1999Conference paper (Other academic)
  • 25.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Litwin, Andrej
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Small Signal and Power Evaluation of Novel BiCMOS -Compatible Short-Channel LDMOS Technology2003In: IEEE transactions on microwave theory and techniques, ISSN 0018-9480, E-ISSN 1557-9670, Vol. 51, no 3, p. 1052-1056Article in journal (Refereed)
  • 26.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A computational load-Pull Investigation of Harmonic Loading effects on AM-PM conversion2008In: Proc of GHz symposium, 2008, p. 83-Conference paper (Refereed)
  • 27.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A Computational Load-Pull Method for TCAD Optimization of RF-Power Transistors in Bias-Modulation Applications2008In: Proceedings of the 3rd European Microwave Integrated Circuits Conference, 2008Conference paper (Refereed)
    Abstract [en]

    In this paper a method for TCAD evaluation of RF-Power transistors for high-efficiency operation using drain bias-modulation is presented. The method is based on large signal time-domain transient computational load-pull. With the method, intrinsic device parasitics and mechanisms affecting device efficiency under drain bias modulation can be investigated and optimized for the application making it very useful for RFIC design. A case study has been done on a CMOS compatible LDMOS. For verification under dynamic operation two-tone signals with varying envelope has been simulated. The results show a possible 15% increase in the efficiency of a modulated signal for the studied device at the expense of increased phase distortion observable also in the time-domain waveforms generated. Since the method is based on TCAD it is also useful in the investigation of e.g. dynamic breakdown during high envelope under bias-modulation operation.

  • 28.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A Computational Load-Pull Method with Harmonic Loading for High-Efficiency Investigations2009In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 53, no 1, p. 86-94Article in journal (Refereed)
    Abstract [en]

    In this paper a method for TCAD evaluation of RF-power transistors in high-efficiency operation using harmonic loading is presented. The method is based on large signal time-domain computational load-pull. Active loads are used in the harmonic load-pull for simulation time reduction. With the method device performance under different harmonic load impedance can be investigated at an early stage in the design process. Alternative designs can be compared and the mechanisms affecting device efficiency in class-F can be studied at chip-level. For method validation, a case study is made on an LDMOS transistor. The transistor is load-pulled in class-AB and then optimized for efficiency at 2f0 and 3f0 using a novel approach with passive fundamental load and active harmonic loads. A swept simulation is conducted using passive fundamental and harmonic loads. Waveforms in compression are analyzed and the mechanisms creating the increased efficiency in class-F are identified by a comparative study to class-AB. Class-F harmonic termination is shown to give a 17% overall reduction of dissipated power and a 9% increase in output power. The expected efficiency increase is about 3–10% in the compression region depending on level of compression.

  • 29.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A Load-Pull Based Device Evaluation Method for Bias Modulated Applications2009In: Proc EuMC 2009, 2009, p. 1461-1464Conference paper (Refereed)
  • 30.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A Novel Load-Pull Setup with Envelope Calibration for Bias Modulated Measurements2009In: Proc EuMC 2009, 2009, p. 942-945Conference paper (Refereed)
  • 31.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Investigation of SOI-LDMOS for RF-power applications using Computational Load-Pull2009In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 56, no 3, p. 505-511Article in journal (Refereed)
    Abstract [en]

    Small-signal and computational load-pull simulations are used to investigate the effect of substrate resistivity on efficiency in high-power operation of high-frequency silicon-on-insulator-LDMOS transistors. Identical transistors are studied on substrates with different resistivities. Using computational load pull, their high-power performance is evaluated. The results are compared to previous investigations, relating the OFF-state output resistance to high-efficiency operation. From the large-signal simulation, an output circuit model based on a load-line match is extracted with parameters traceable from small-signal simulations. It is shown that, albeit high OFF-state output resistance is a good indication, it is not sufficient for high efficiency in a high-power operation. The bias and frequency dependence of the coupling through the substrate makes a more detailed ON-state analysis necessary. It is shown that very low resistivity and high-resistivity SOI substrates both result in a high efficiency at the studied frequency and bias point. It is also shown that a normally doped medium-resistivity substrate results in a significantly lower efficiency.

  • 32.
    Bengtsson, Olof
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion2008In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 52, no 7, p. 1024-1031Article in journal (Refereed)
    Abstract [en]

    In this paper the mechanisms causing the capacitive, reactive non-linearities in a lateral double diffused MOS, LDMOS, transistor are investigated. The non-linear input capacitance under load-line power match is extracted and analyzed. Computational TCAD load-pull is used to analyze the effect of non-linear capacitance on two-tone intermodulation distortion and AM–PM conversion in class-A operation. High-frequency measurements have been made to verify the use of 2D numerical device simulations for the analysis. It is found that the input capacitance, Cgg, of the LDMOS transistor working under power match conditions is a strongly non-linear function of gate voltage Vg but with an almost linear initial increase in Cgg. The voltage dependence of Cgg is found to mainly affect higher order IMD products in class-A operation. Transient simulations however show that Cgg seriously contributes to the onset of AM–PM conversion well below the 1 dB compression point.

  • 33. Bengtsson, S
    et al.
    Bergh, M
    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    BESOI materials with diamond or aluminium as buried insulator1997In: DERA workshop on Novel Silicon-On-Insulator Materials and Applications, April 17-18, Malvern, UK, 1997Conference paper (Refereed)
  • 34. Bengtsson, S
    et al.
    Bergh, M
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jauhiainen, A
    Integration of diamond and silicon for electronic materials1998In: the MRS fall meeting, Symposium D-Integration of Dissimilar Materials in Micro- and Optoelectronics, Boston, MA, USA, Dec, 1998Conference paper (Refereed)
  • 35. Berg, J
    et al.
    Bengtsson, S
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Simulation of SOI MOSFETs at GHz-frequencies2000In: Proceedings of the GHz2000 Symposium, pp. 399-402, Gothenburg March 13-14, Sweden, 2000Conference paper (Refereed)
  • 36.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    An accurate direct extraction technique for the MBVD resonator model2004In: Proceedings of 34th European Microwave Conference, 2004, p. 1241-1244Conference paper (Refereed)
  • 37.
    Dancila, Dragos
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. FREIA.
    Hoang Duc, Long
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. FREIA.
    Jobs, Magnus
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, High Energy Physics.
    Goryashko, Vitaliy
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, High Energy Physics.
    Rydberg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. FREIA.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Ruber, Roger
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, High Energy Physics.
    Preliminary measurements of eight solid-statemodules of the 10 kW pulsed power amplifier at 352 MHz under development at FREIA2016Conference paper (Refereed)
  • 38.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Keskitalo, Niklas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Electrical investigation of the silicon/diamond interface1997Conference paper (Refereed)
    Abstract [en]

    A new method for measuring the interface properties, using diamond terminated silicon p-n diodes, is used to quantify the electrical quality and to determine the conduction mechanism of the silicon/diamond interface for two types of diamond. It was found

  • 39.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Keskitalo, Niklas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Electrical investigation of the silicon/diamond interface1997In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 36, no 1-4, p. 245-248Article in journal (Refereed)
    Abstract [en]

    A new method for measuring the interface properties, using diamond terminated silicon p-n diodes, is used to quantify the electrical quality and to determine the conduction mechanism of the silicon/diamond interface for two types of diamond. It was found

  • 40.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A Self-Aligned Lateral Bipolar Transistor Concept Realized on SIMOX-material1993In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 40, no 12, p. 2359-2360Article in journal (Refereed)
  • 41.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Etching mechanism of silicon1993In: MEMS, 1993Conference paper (Refereed)
  • 42.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Söderbärg, Anders
    Steady State and Transient Thermal Characterization of Silicon on Diamond Materials1994In: Presented at the 16th Nordic Semiconductor Meeting, 1994Conference paper (Refereed)
  • 43.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI1993In: Infos, 1993Conference paper (Refereed)
  • 44.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Very High Current Gain Enhancement by Substrate Biasing of Lateral Bipolar Transistors on Thin SOI1993In: Microelectronic Engineering, ISSN 0167-9317, E-ISSN 1873-5568, Vol. 22, no 1-4, p. 379-382Article in journal (Refereed)
  • 45.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bohlin, Kjell
    Magnusson, Fredrik
    High Current Gain Lateral Bipolar Action in DMOS Transistors1994In: Proceedings of ESSDERC, 1994, p. 221-224Conference paper (Refereed)
  • 46.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Söferbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    A Lateral Bipolar Transistor Concept Tested on SIMOX- and BSOI-Materials1992In: Proceednings IEEE International SOI Conference, 1992, p. 76-77Conference paper (Other academic)
  • 47.
    Edholm, Bengt
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Johansson, E
    Transient Measurements of Heat Distribution in Devices Fabricated on Silicon-On Diamond Material1995In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 34, no 9A, p. 4706-4714Article in journal (Refereed)
    Abstract [en]

    Thermal properties of devices fabricated on different silicon-on-diamond (SOD) and silicon-on-insulator (SOI) structures have been investigated. A new method for transient measurements of temperature distributions in the S OI/S OD materials has been devel

  • 48.
    Engelmark, Fredrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Westlinder, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Iriarte Fuentes, Gonzalo
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Electrical Characterization of AlN MIS and MIM Structures2003In: IEEE Trans Electron Devices, Vol. 50, no 5, p. 1214-1219Article in journal (Refereed)
  • 49.
    Enlund, Johannes
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. Avdelningen för fasta tillståndets elektronik.
    Isberg, Jan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. elektricitetslära och åskforskning.
    Karlsson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. materialvetenskap.
    Nikolajeff, Fredrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. materialvetenskap.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. fasta tillståndets elektronik.
    Twitchen, Daniel J.
    Element Six, UK.
    Anisotropic dry etching of boron doped single crystal CVD diamond2005In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 43, no 9, p. 1839-1842Article in journal (Refereed)
    Abstract [en]

    Semiconducting boron doped single-crystal CVD diamond has been patterned using aluminum masks and an inductively coupled plasma (ICP) etch system. For comparison insulating HPHT diamond samples were also patterned using the same process. Diamond etch rates above 200 nm/min were obtained with an O2/Ar discharge for a gas pressure of 2.5 mTorr using 600 W RF power. We have accomplished the fabrication of structures with a minimum feature size of 1 μm with vertical sidewalls in both CVD and HPHT diamond. The ICP etching produced smooth surfaces with a typical root-mean-square surface roughness of 3 nm. The dependence of etch rate on bias voltage was somewhat different for the two types of diamond. However, for all samples both the etch rate and anisotropy were found to improve with increasing bias voltage.

  • 50.
    Ewert, Tony
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Tuinhout, Hans
    Wils, Nicole
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Design and implementation of an ultra high precision parametric mismatch measurement system2005In: Proceedings ICMTS, 2005, p. 149-154Conference paper (Refereed)
1234 1 - 50 of 185
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf