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  • 1.
    Enlund, Johannes
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. Avdelningen för fasta tillståndets elektronik.
    Isberg, Jan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electricity. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. elektricitetslära och åskforskning.
    Karlsson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. materialvetenskap.
    Nikolajeff, Fredrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. materialvetenskap.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. fasta tillståndets elektronik.
    Twitchen, Daniel J.
    Element Six, UK.
    Anisotropic dry etching of boron doped single crystal CVD diamond2005In: Carbon, ISSN 0008-6223, E-ISSN 1873-3891, Vol. 43, no 9, p. 1839-1842Article in journal (Refereed)
    Abstract [en]

    Semiconducting boron doped single-crystal CVD diamond has been patterned using aluminum masks and an inductively coupled plasma (ICP) etch system. For comparison insulating HPHT diamond samples were also patterned using the same process. Diamond etch rates above 200 nm/min were obtained with an O2/Ar discharge for a gas pressure of 2.5 mTorr using 600 W RF power. We have accomplished the fabrication of structures with a minimum feature size of 1 μm with vertical sidewalls in both CVD and HPHT diamond. The ICP etching produced smooth surfaces with a typical root-mean-square surface roughness of 3 nm. The dependence of etch rate on bias voltage was somewhat different for the two types of diamond. However, for all samples both the etch rate and anisotropy were found to improve with increasing bias voltage.

  • 2.
    Enlund, Johannes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Martin, David
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    An improved electrodeless solidly mounter thin film resonator2005In: Proc Int IEEE Ultrason Symp, 2005Conference paper (Other scientific)
  • 3.
    Enlund, Johannes
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Martin, David
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Solidly mounted thin film electro-acoustic resonator utilizing a conductive Bragg reflector2008In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 141, no 2, p. 598-602Article in journal (Refereed)
    Abstract [en]

    A new design of a solidly mounted resonator (SMR) that utilizes an all-metal Bragg reflector eliminating thus the need for a bottom electrode is proposed. In this configuration, the role of the bottom electrode is taken by the Bragg reflector rendering the resonator “combined electrode-Bragg reflector SMR”. The main advantages of the proposed design are the substantially reduced electrode resistance (and hence higher Q), the utilization of the full piezoelectric coupling at high frequencies as well as expected improvement in power handling capabilities due to lower dissipation and improved heat conductivity. Resonators with the classical and the new design have been fabricated and evaluated. The measurements indicate that indeed the resonators with the new design demonstrate improved performance.

  • 4.
    Enlund, Johannes
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Electric Field Sensitivity of Thin Film Resonators Based on Piezoelectric AlN thin films2006Conference paper (Refereed)
  • 5.
    Katardjiev, Ilia
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Martin, David
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Recent advances in the thin film electroacoustic technology2006Conference paper (Refereed)
  • 6.
    Martin, David
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Kappertz, Oliver
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Jensen, Jens
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics.
    Comparing XPS and ToF-ERDA measurement of high-k dielectric materials2007Conference paper (Refereed)
  • 7.
    Martin, David
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jensen, Jens
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics. Jonfysik.
    Compositional characterization of high-k dielectric material via XPS and ToF-ERDA2006Conference paper (Other (popular science, discussion, etc.))
  • 8. Norling, M
    et al.
    Enlund, Johannes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Gevorgian, S
    A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator2005In: Proc of the IEEE MMT-S, International microwave symposium, 2005Conference paper (Other scientific)
  • 9.
    Yantchev, Ventsislav
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Electroacoustic Devices utilizing the Lower GHz Frequency band based on High-velocity Laterally propagating Modes in c-oriented AlN thin film membranes -: a Comparative Study2005In: Proc. 2005 Gigahertz Symp., Uppsala, Sweden, October 2005, 2005Conference paper (Other academic)
  • 10.
    Yantchev, Ventsislav
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Design of high frequency piezoelectric resonators utilizing laterally propagating fast modes in thin aluminum nitride (AlN) films2006In: Ultrasonics, ISSN 0041-624X, E-ISSN 1874-9968, Vol. 45, no 1-4, p. 208-212Article in journal (Refereed)
    Abstract [en]

    Highly c-oriented aluminum nitride (AlN) thin piezoelectric films have been grown by pulsed direct-current (DC) magnetron reactive sputter deposition. The films were deposited at room temperature and had a typical full width half maximum (FWHM) value of the (0 0 2) rocking curve of around 2°. Resonant devices in thin film plates having surface acoustic wave (SAW) based designs were fabricated by means of low resolution photolithography. The devices were designed to operate with the fast Rayleigh and Lamb modes respectively. Both types of devices exhibited propagation velocities in excess of 10 000 m/s and sufficient electromechanical couplings. The device measurements illustrate the big potential of these modes for the development of low cost IC compatible electroacoustic devices in the lower GHz range. The basic properties of the modes studied are discussed in a comparative manner. Potential commercial applications are also outlined.

1 - 10 of 10
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