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  • 1.
    Austgen, M
    et al.
    Institute of Physics (IA), RWTH Aachen University, Tyskland.
    Koehl, D
    Institute of Physics (IA), RWTH Aachen University, Tyskland.
    Zalden, P
    Institute of Physics (IA), RWTH Aachen University, Tyskland.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Pflug, A
    Fraunhofer IST, Braunschweig, Tyskland.
    Siemers, M
    Fraunhofer IST, Braunschweig, Tyskland.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wuttig, M
    Institute of Physics (IA), and, JARA-FIT, RWTH Aachen University, Tyskland.
    Sputter yield amplification by tungsten doping of Al(2)O(3) employing reactive serial co-sputtering: process characteristics and resulting film properties2011In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 44, no 34, p. 345501-Article in journal (Refereed)
    Abstract [en]

    The deposition rate of reactively sputtered Al(2)O(3) coatings is demonstrated to increase by 80% upon tungsten doping of the used aluminium target. This effect is based on the recoil of the sputtering species at implanted dopants below the target surface and is termed sputter yield amplification. For the investigation of this effect, a novel type of magnetron sputter deposition system is employed that facilitates serial co-sputtering. In this technique doping of the elementary target is enabled by a dynamic sputtering process from an auxiliary cathode. In our case, the rotating aluminium target is dynamically coated with tungsten from this auxiliary cathode. Since the primary target rotates, the auxiliary cathode is placed in series with the primary erosion zone. The deposition rate of Al(2)O(3) can be considerably increased in this process already for very low concentrations of approximately 1% of tungsten in the resulting film. A characterization of the dynamics of reactive sputtering as a function of target rotation speed is performed.

  • 2.
    Barankova, Hana
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bardos, Ladislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Abnormal High Rate Deposition of TiN Films by the Radio Frequency Plasma Jet System1995In: J Electrochem Soc, ISSN 0013-4651, Vol. 142, no 3, p. 883-887Article in journal (Refereed)
    Abstract [en]

    Radio frequency Ar and Ar + N-2 plasma jets generated in a hollow electrode terminated by a small size Ti nozzle were used for deposition of Ti and TiN films. The regime with low content of reactive gas resulted in an extreme enhancement of TiN deposition

  • 3.
    Barankova, Hana
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bardos, Ladislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Characterization of the linear arc discharge (LAD) source for film deposition1997In: SURFACE & COATINGS TECHNOLOGY, ISSN 0257-8972, Vol. 94-5, no 1-3, p. 578-582Article in journal (Refereed)
    Abstract [en]

    The linear arc discharge (LAD) source is a parallel plate hollow cathode with a magnetic field perpendicular to the plates near the outlet slit of the cathode. The hollers cathode discharge is generated by radio frequency (rf) power and is confined mainly

  • 4.
    Barankova, Hana
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bardos, Ladislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Metastable assisted deposition of TiN films1995In: Appl Phys Lett, ISSN 0003-6951, Vol. 67, no 11, p. 1521-1523Article in journal (Refereed)
    Abstract [en]

    An excess heat from an exothermic reaction of metastable Ar (4(3)P(0)) and Ar (4(3)P(2)) atoms with N-2 molecules at low contents of N-2 in Ar was found to be responsible for an enhanced thermionic emission, an enhanced production of Ti target vapor, an i

  • 5.
    Barankova, Hana
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bardos, Ladislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The radio frequency hollow cathode plasma jet arc for the film deposition1996In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 14, no 6, p. 3033-3038Article in journal (Refereed)
    Abstract [en]

    The radio frequency hollow cathode plasma jet (RPJ or RHCPJ) are discharge is studied for an activated reactive deposition of TiN films. The presence of low content of nitrogen in argon enables reaching the are regime at lower powers than in pure argon. T

  • 6.
    Barankova, Hana
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bardos, Ladislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Titanium nitride deposited by high rate rf hollow cathode plasma jet reactive process1995In: VACUUM, ISSN 0042-207X, Vol. 46, no 12, p. 1433-1438Article in journal (Refereed)
    Abstract [en]

    A radio frequency hollow cathode plasma jet (RPJ or RHCPJ) with a tubular Ti nozzle as a source of metal particles was used for the reactive deposition of TiN. The results of optical emission spectroscopy (OES), temperature measurements at the active zone

  • 7.
    Barankova, Hana
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bardos, Ladislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Linear arc discharge (LAD): A new type of hollow cathode plasma source1996In: SURFACE & COATINGS TECHNOLOGY, ISSN 0257-8972, Vol. 87-8, no 1-3, p. 377-380Article in journal (Refereed)
    Abstract [en]

    A novel linearly scalable source for low pressure plasma processing is described. The source is based on a parallel plate hot hollow cathode in a focusing magnetic field which allows generation of a linearly uniform plasma in a gas admitted into the slit

  • 8.
    Barankova, Hana
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Carlsson, Patrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hysteresis effects in the sputtering process using two reactive gases1995In: Thin Solid Films, ISSN 0040-6090, Vol. 260, no 2, p. 181-186Article in journal (Refereed)
    Abstract [en]

    The reactive sputtering process involving two reactive gases has been investigated. Sputtering titanium in the presence of oxygen and nitrogen in argon was studied by means of optical emission and mass spectrometries. The experiments reveal the mechanism

  • 9.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A new method for film deposition in the discharge of target metal vapour1995In: Surface and Coatings Technology, ISSN 0257-8972, Vol. 72, no 3, p. 174-180Article in journal (Refereed)
    Abstract [en]

    A new method for generation of a discharge in its own metal vapour of an r.f.-excited electrode is described. The method is based on the r.f. plasma jet (RPJ) system utilizing a small size r.f. nozzle in which a hollow cathode-type discharge is generated.

  • 10.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Linear arc discharge source for large area plasma processing1997In: Appl Phys Lett, Vol. 70, p. 577-579Article in journal (Refereed)
  • 11.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Microwave surfatron system for diamond film depositions1995In: International Symposium on Plasma Chemistry – ISPC 12, Minneapolis, USA, August 21-25, Paper no PK 1, 1995Conference paper (Refereed)
  • 12.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Microwave surfatron system for plasma processing1996In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 14, no 2, p. 474-477Article in journal (Refereed)
  • 13.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    PECVD by hollow cathodes1998In: Proceedings of the 41st Annual Tech.Conf. of the Society of Vacuum Coaters (SVC), Boston 1998, ISSN 0737-5921, Paper P-1, Proc., 1998, p. 315-320Conference paper (Refereed)
  • 14.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Thin film processing by the radio frequency hollow cathodes1997In: SURFACE & COATINGS TECHNOLOGY, ISSN 0257-8972, Vol. 97, no 1-3, p. 723-728Article in journal (Refereed)
    Abstract [en]

    The main features of the radio frequency (RF) hollow cathodes for thin film processing are summarized. The utilization of cylindrical RF hollow cathodes in both the plasma-enhanced chemical vapour deposition (PECVD) and the physical vapour deposition (PVD

  • 15.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lebedev, Y A
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Diamond deposition in a microwave electrode discharge at reduced pressures1997In: DIAMOND AND RELATED MATERIALS, ISSN 0925-9635, Vol. 6, no 2-4, p. 224-229Article in journal (Refereed)
    Abstract [en]

    Diamond deposition on healed Si-substrates was studied under microwave discharge generated by an electrode-antenna either in a ''point-to-plane'' arrangement or in a ''parallel-plane'' arrangement at gas pressures of 1-15 Torr in a mixture of hydrogen wit

  • 16.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Compositional changes during ion-assisted deposition of TixW1-x barrier layers on structured surfaces1995In: The 42nd international symposium of the American Vacuum Society, San José, USA, 1995Conference paper (Refereed)
  • 17.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Basic Understanding of the Pulsed DC Reactive Sputter Deposition Process1999In: Invited to Second Asian-European Int Conf on Plasma Surface Engineering (AEPSE´99), Beijing, September 15-19, 1999Conference paper (Refereed)
  • 18.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Preferential sputtering effects in thin film processing1999In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 17, no 4, p. 1916-1925Article in journal (Refereed)
    Abstract [en]

    Predicting the partial sputtering yield (sputtered atoms of one element/incident energetic ion) for different elements during sputtering from multielement targets:is not a straightforward task. It is commonly observed that ion bombardment of composite,tar

  • 19.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Resputtering effects during ion beam assisted deposition and the sputter yield amplification effect1996In: Surface & Coatings Technology, Vol. 84, p. 353-362Article in journal (Refereed)
  • 20.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Synergistic sputtering effects during ion bombardment with two ion species1995In: J Vac Sci Technol, Vol. A13, no 3, p. 831-833Article in journal (Refereed)
  • 21.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process1995In: Journal de Physique IV, Colloque C5, suppl au de Jorurnal de Physique II, 5, Vol. 5, p. C5/45-C5/54Article in journal (Refereed)
  • 22.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Basic Understanding of Reactive Sputtering Processes2003In: Invited to the AVS 50th National Symposium in Baltimore, Maryland, USA, November 2-7, 2003, 2003Conference paper (Refereed)
  • 23.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Fundamental understanding and modeling of reactive sputtering process2005In: Thin Solid Films, Vol. 476, no 2, p. 215-230Article in journal (Refereed)
  • 24.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Computer modeling as a tool to predict deposition rate and film composition in the reactive sputtering process1998In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 16, no 3, p. 1277-1285Article in journal (Refereed)
    Abstract [en]

    Reactive sputtering is a widely used technique to deposit oxides, nitrides, etc. A serious drawback of this technique, however, is the drastic decrease in deposition rate that almost always occurs when depositing compound films as compared to depositing p

  • 25.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Basic Understanding of the Pulsed DC Reactive Spitter Deposition Process2003In: The 4th Asian-European Int Conf on Plasma Surface Engineering, AEPSE 2003, Jeju City, South Korea, September 28-October 2, 2003, 2003Conference paper (Refereed)
  • 26.
    Berg, Sören
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Sputtering yield amplification in reactive sputtering2010Conference paper (Refereed)
  • 27.
    Berg, Sören
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Särhammar, Erik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Upgrading the “Berg-model” for reactive sputtering processes2014In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 565, p. 186-192Article, review/survey (Refereed)
    Abstract [en]

    Several phenomena are neglected in the original “Berg model” in order to provide a simple model of the reactive sputtering process. There exist situations, however, where this simplified treatment limits the usefulness of the model. To partly correct for this, we introduce an upgraded version of the basic model. We abandon the simplifying assumption that compound targets are sputter eroded as molecules. Instead, the molecule is split and individual atoms will be sputter ejected. Also, the effect of ionized reactive gas atoms implanted into the target will be considered. We outline how to modify the original model to include these effects. Still, the mathematical treatment is maintained simple so that the new model may serve as an easy-to-understand tutorial of the complex mechanisms of reactive sputtering.

  • 28.
    Engelmark, Fredrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Iriarte, Gonzalo Fuentes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Hårsta, Anders
    Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. oorganisk kemi.
    Smith, Ulf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition2000In: J. Vac. Sci. Technol. A, Vol. 18, no 4, p. 1609-1612Article in journal (Refereed)
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Iriarte, Gonzalo Fuentes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Katardjiev, Ilia V
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Ottosson, M
    Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Muralt, P
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Structural and electroacoustic studies of AIN thin films during low temperature radio frequency sputter deposition2001In: J Vac Sci Technol, Vol. A19, no 5, p. 2664-2669Article in journal (Refereed)
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    Westlinder, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Experimental and computer simulation studies of the2003In: J Vac Sci Technol, Vol. A21, no 6, p. 1981-1987Article in journal (Refereed)
  • 31. Hallman, R.
    et al.
    Andersson, J.
    Särhammar, Erik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Studies of TiN films deposited by HIPIMS at different substrate temperatures and substrate bias2010Conference paper (Refereed)
  • 32.
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl-21997In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 15, no 3, p. 686-691Article in journal (Refereed)
    Abstract [en]

    The angular dependence of the etch rate in reactive ion etching (RIE) and inductively coupled plasma (ICP) systems for polysilicon etching with SF6 and Cl-2 is determined using a recently developed direct measurement method. The latter utilizes specially

  • 33.
    Hedlund, Christer
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl21997In: The 43rd International Symposium of the American Vacuum Society, Philadelphia PA, USA, 1997Conference paper (Refereed)
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    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Blom, Hans-Olof
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    A method for the determination of the angular dependence during dry etching1995In: The American Vacuum Society, 42nd National Symposium, Minneapolis, USA, Oct, 1995Conference paper (Refereed)
  • 35.
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    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Blom, Hans-Olof
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    A Method for the Determination of the Angular Dependence during Dry Etching1996In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 14, no 5, p. 3239-Article in journal (Refereed)
  • 36. Jain, P
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    Bhagwat, V
    Rymaszewski, E J
    Lu, T M
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Model relating process variables to film electrical properties for reactively sputtered tantalum oxide thin films2003In: J Appl Phys, Vol. 93, p. 3596-3604Article in journal (Refereed)
  • 37.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barklund, Anna
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Controlled topography production - True 3D simulation and experiment1995In: Vacuum, Vol. 46, p. 971-975Article in journal (Refereed)
  • 38.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Compositional variations of sputter deposited Ti/W barrier layers on substrates with pronounced surface topography1999In: THIN SOLID FILMS, ISSN 0040-6090, Vol. 348, no 1-2, p. 227-232Article in journal (Refereed)
    Abstract [en]

    Sputter deposited Ti/W barrier layers have been found to be Ti deficient with respect to the target composition, which is attributed to the preferential resputtering of Ti from the deposited films by energetic neutrals or ions from the discharge. On the o

  • 39.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Larsson, T
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Characterization and optimization of a dry etching process for silicon nitride spacer formation1997In: The 44th international symposium of the American Vacuum Society, San José, USA, 1997Conference paper (Refereed)
  • 40.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Dynamic simulations of pulsed reactive sputtering processes2000In: J Vac Sci Technol, Vol. A18, no 2, p. 503-508Article in journal (Refereed)
  • 41.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Target compound layer formation during reactive sputtering1999In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 17, no 4, p. 1827-1831Article in journal (Refereed)
    Abstract [en]

    It is well known that a compound layer may form at the target surface during reactive sputtering. However, the significance of this layer for the response to a change in target conditions has so far not been carefully investigated. The standard model for

  • 42.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Target Compound Layer Formation during Reactive Sputtering1998In: Presented at AVS 45th National Symposium in Baltimore, Maryland, USA, November 2-6, 1998Conference paper (Refereed)
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    Jonsson, Lars
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Frequency response in pulsed DC reactive sputtering processes2000In: Thin Solid Films, Vol. 365, p. 43-48Article in journal (Refereed)
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    Jonsson, Lars
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A new self aligned asymmetric lateral bipolar transistor1996In: The 17th Nordic Semiconductor Meeting, Norway, June, 1996Conference paper (Refereed)
  • 45.
    Kappertz, Oliver
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Advanced Process Modelling of the Rotating Magnetron2006Conference paper (Refereed)
  • 46.
    Kappertz, Oliver
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kubart, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Severin, Daniel
    Wüttig, Mattias
    Ion Implantation Effects in Reactive Sputter Deposition2005In: Presented at the 14th Int. Conf. on Surface Modification of Materials by Ion Beams (SMMIB’05) in Kusadasi, Turkey, 4-9 September, 2005Conference paper (Other scientific)
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    Kappertz, Oliver
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rosén, Daniel
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Influence of rotating magnets on hysteresis in reactive sputtering2004In: Society of Vacuum Coaters, 7th Annual Technical Conference Proceedings, April, 2004Conference paper (Other scientific)
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rosén, Daniel
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A Simplified Treatment of Target Implantation Effects in Reactive Sputtering2004In: The International Conference on Metallurgical Coatings and Thin Films in San Diego, USA, 2004Conference paper (Refereed)
  • 49.
    Kubart, Tomas
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Aiempanakit, M.
    Andersson, J.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Helmersson, U.
    Studies of hysteresis effect in reactive HiPIMS deposition of oxides2010Conference paper (Refereed)
  • 50.
    Kubart, Tomas
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Aiempanakit, M
    Plasma & Coatings Physics Division, IFM, materials Physics, Linköping University, Linköping.
    Andersson, Joakim
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Helmersson, U
    Plasma & Coatings Physics Division, IFM, materials Physics, Linköping University, Linköping.
    Studies of hysteresis effect in reactive HiPIMS deposition of oxides2011In: Surface & Coatings Technology, ISSN 0257-8972, E-ISSN 1879-3347, Vol. 205, no Suppl. 2, p. S303-S306Article in journal (Refereed)
    Abstract [en]

    High power impulse magnetron sputtering (HiPIMS) has proven to be capable of substantial improvement of the quality of deposited coatings. Lately, there have been a number of reports indicating that the hysteresis effect may be reduced in HiPIMS mode resulting in an increase of the deposition rate of stoichiometric compound as compared to a direct current magnetron sputtering process in oxide mode. In this contribution, we have studied the hysteresis behaviour of Ti metal targets sputtered in Ar + O(2) mixtures. For fixed pulse on time and a constant average power, there is an optimum frequency minimizing the hysteresis. The effect of gas dynamics was analyzed by measurements of the gas refill time and rarefaction. Results indicate that the gas rarefaction may be responsible for the observed hysteresis behaviour. The results are in agreement with a previous study of Al oxide reactive process.

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