uu.seUppsala University Publications
Change search
Refine search result
123 1 - 50 of 129
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the 'Create feeds' function.
  • 1.
    Ahlén, Anders
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signals and Systems Group.
    Ahlgren, Bengt
    Uppsala University, Disciplinary Domain of Science and Technology, Mathematics and Computer Science, Department of Information Technology, Computer Systems.
    Grönroos, Roland
    Uppsala University, Disciplinary Domain of Science and Technology, Mathematics and Computer Science, Department of Information Technology, Computer Systems.
    Gunningberg, Per
    Uppsala University, Disciplinary Domain of Science and Technology, Mathematics and Computer Science, Department of Information Technology, Computer Systems.
    Hjort, Klas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Micro Structural Technology.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Rohner, Christian
    Uppsala University, Disciplinary Domain of Science and Technology, Mathematics and Computer Science, Department of Information Technology, Computer Systems.
    Rydberg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signals and Systems Group.
    Presentation of the VINN Excellence Center for Wireless Sensor Networks (WISENET)2008In: Conference on Radio Science (RVK08), Växjö, 2008Conference paper (Refereed)
  • 2.
    Anderson, Henrik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Weissbach, Thomas
    Attana AB, Stockholm.
    Wallinder, Daniel
    Attana AB, Stockholm.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Ingemarsson, Björn
    Attana AB, Stockholm.
    Systematic investigation of biomolecular interactions using combined frequency and motional resistance measurements2011In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 153, no 1, p. 135-144Article in journal (Refereed)
    Abstract [en]

    The resonance frequency of acoustic biosensors is today used as a label-free technique for detecting mass changes on sensor surfaces. In combination with an appropriate continuous flow system it has earlier been used for affinity and kinetic rate determination. Here, we assess the potential of a modified acoustic biosensor, monitoring also the real-time dissipation through the resistance of the sensor, to obtain additional kinetic information related to the structure and conformation of the molecules on the surface. Actual interaction studies, including an attempt to determine avidity, are presented along with thorough verification of the experimental setup utilizing true viscous load exposure together with protein and DNA immobilizations. True viscous loads show a linear relationship between resistance and frequency as expected. However, in the interaction studies between antibodies and proteins, as well as in the immobilization of DNA and proteins, higher surface concentrations of interacting molecules led to a decrease (i.e. deviation from the linear trend) in the differential resistance to frequency ratio. This is interpreted as increased surface rigidity at higher surface concentrations of immobilized molecules. Consequently, studies that aim at obtaining biological binding information, such as avidity, from real-time resistance and dissipation data should be conducted at low surface concentrations. In addition, the differential resistance to frequency relationship was found to be highly dependent on the rigidity of the preceding layer(s) of immobilized molecules. This dependence can be utilized to obtain a higher signal-to-noise ratio for resistance measurement by using low surface densities of immobilized interaction partners.

  • 3.
    Anderås, Emil
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Arapan, Lilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Thin Film Plate Wave Resonant Sensor for Pressure and Gravimetric Measurements2011In: Procedia Engineering 25, Eurosensors XXV: Proc. Eurosensors XXV, September 4-7, 2011, Athens, Greece, Elsevier, 2011, p. 571-574Conference paper (Refereed)
    Abstract [en]

    Thin film plate acoustic resonators (FPAR) devices operating in the lowest order symmetric Lamb wave mode (S0),the first order asymmetric Lamb wave mode (A1) and the first order symmetric Lamb wave mode (S1), propagatingin c-oriented aluminum nitride (AlN) membranes on Si were fabricated and tested for their sensitivities to pressureand mass. Systematic data on frequency shifts versus rigid mass (layer) thickness and ambient pressure variations arepresented for the different Lamb wave resonances. Further the ability to work in liquid environment of the S0, A1 andS1 modes, respectively, has been tested in view of Bio-sensor applications.

  • 4.
    Anderås, Emil
    et al.
    St Jude Medical, Cardiovascular Division, Uppsala.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lamb wave resonant pressure micro-sensor utilizing a thin-film aluminium nitride membrane2011In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 21, no 8, p. 085010-Article in journal (Refereed)
    Abstract [en]

    In this work, pressure sensitivities of aluminium nitride (AlN) thin film plate acoustic resonators (FPAR) operating at the lowest-order symmetric (S0), the first-order asymmetric (A1) as well as the first-order symmetric (S1) Lamb modes are theoretically and experimentally studied in a comparative manner. The finite element method analysis has also been performed to get a further insight into the FPAR pressure sensitivity. The theoretical predictions are found to be in good agreement with the experiment. The S0 Lamb mode is identified as the most pressure-sensitive FPAR mode, while the A1 and S1 modes are found to be much less sensitive. Further, the S0 and the A1 modes exhibit almost equal temperature sensitivities, which can be exploited to eliminate the temperature drift by comparing the resonance frequencies of the latter two modes.

  • 5.
    Anderås, Emil
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Tilted c-Axis Thin-Film Bulk Wave Resonant Pressure Sensors With Improved Sensitivity2012In: IEEE Sensors Journal, ISSN 1530-437X, E-ISSN 1558-1748, Vol. 12, no 8, p. 2653-2654Article in journal (Refereed)
    Abstract [en]

    Aluminum nitride thin film bulk wave resonant pressure sensors employing c- and tilted c-axis texture, have been fabricated and tested for their pressure sensitivities. The c-axis tilted FBAR pressure sensors demonstrate substantially higher pressure sensitivity compared to its c-axis oriented counterpart. More specifically the thickness plate quasi-shear resonance has demonstrated the highest pressure sensitivity while further being able to preserve its performance in liquid environment.

  • 6.
    Anderås, Emil
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vallin, Örjan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Drift in thin film SOI piezoresistors2010In: Proc. of EUROSOI Workshop, 2010 Jan 25-27, Grenoble, France, 2010, p. 71-72Conference paper (Refereed)
  • 7.
    Anderås, Emil
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Vestling, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Resistance Electric Field Dependence and Time Drift of Piezoresistive Single Crystalline Silicon Nanofilms2009In: Proceedings of Eurosensors May 2009, Procedia Chemistry vol 1 (1), 2009, p. 80-83Conference paper (Refereed)
  • 8.
    Arapan, Lilia
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Alexieva, Gergana
    Dept of Solid State Physics and Microelectronics, University of Sofia, Bulgarien.
    Avramov, Ivan D
    Georgy nadjakov Institute of Solid State Physics, Sofia,Bulgarian Academy of Sciences.
    Radeva, Elisaveta
    Georgy Nadjakov Institute of Solid State Physics, Sofia, Bulgarian Academy of Sciences.
    Strashilov, Vesseline
    University of Sofia.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Highly Mass-Sensitive Thin Film Plate Acoustic Resonators (FPAR)2011In: Sensors, ISSN 1424-8220, E-ISSN 1424-8220, Vol. 11, no 7, p. 6942-6953Article in journal (Refereed)
    Abstract [en]

    The mass sensitivity of thin aluminum nitride (AlN) film S0 Lamb wave resonators is theoretically and experimentally studied. Theoretical predictions based on modal and finite elements method analysis are experimentally verified. Here, two-port 888 MHz synchronous FPARs are micromachined and subsequently coated with hexamethyl-disiloxane(HMDSO)-plasma-polymerized thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented. FPARs demonstrate high mass-loading sensitivity as well as good tolerance towards the HMDSO viscous losses. Initial measurements in gas phase environment are further presented.

  • 9.
    Arapan, Lilia
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Anderås, Emil
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Sensitivity Features of Thin Film Plate Acoustic Wave Resonators2011In: IEEE Sensors Journal, ISSN 1530-437X, E-ISSN 1558-1748, Vol. 11, no 12, p. 3330-3331Article in journal (Refereed)
    Abstract [en]

    Thin film plate acoustic resonators devices operating in the lowest order symmetric Lamb wave mode (S0) in coriented aluminum nitride (AlN) membranes on Si were fabricated and tested for their sensitivities to pressure and mass as well as for their ability to work in liquid environment.

  • 10.
    Arapan, Lilia
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    An intermode-coupled thin-film micro-acoustic resonator2012In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 22, no 8, p. 085004-Article in journal (Refereed)
    Abstract [en]

    A novel concept for the development of thin-film micro-acoustic resonators based on the coupling between different plate acoustic modes was demonstrated. The basic principles for the design and fabrication of intermode-coupled plate acoustic wave resonators on c-textured thin AlN films were presented and first experimental proof of coupling between laterally propagating waves and BAW was demonstrated. The experimental results demonstrate that the grating-assisted intermode coupling can be employed in high-frequency resonators inheriting the low dispersive nature of the S0 mode in combination with the energy localization in the plate bulk typical for the fundamental thickness shear resonance.

  • 11.
    Arapan, Lilia
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Alexieva, Gergana
    Dept of Solid State Physics and Microelectronics, University of Sofia.
    Strashilov, Vesseline
    Dept of Solid State Physics and Microelectronics, University of Sofia.
    Avramov, Ivan
    Georgy Nadjakov Institute of Solid State Physics, Sofia, Bulgarian Academy of Sciences.
    Radeva, Ekaterina
    Georgy Nadjakov Institute of Solid State Physics, Sofia, Bulgarian Academy of Sciences.
    Polymer coated thin film plate acoustic resonators (FPAR) for gas sensing applications2011In: 2011 Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum Proceedings, San Fransisco, CA, USA, 2011Conference paper (Refereed)
    Abstract [en]

    Mass sensitivity of thin aluminum nitride (AlN) film S0 plate wave resonators is theoretically and experimentally studied. Here, two-port 888MHz synchronous thin film plate acoustic resonators (FPAR) are micromachined and subsequently coated with plasma-polymerized hexamethyldisiloxane (pp-HMDSO) thin films of various thicknesses. Systematic data on frequency shift and insertion loss versus film thickness are presented in a comparative manner. Measurements in gas phase environment are further presented in a comparative manner.

  • 12.
    Avramov, Ivan
    et al.
    Bulgarian Academy of Sciences.
    Arapan, Lilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Strashilov, Vesseline
    University of Sofia.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    IC-compatible Power Oscillators Using Thin Film Plate Acoustic Resonator (FPAR)2009In: Proceedings 2009 IEEE International Ultrasonics Symposium, 2009Conference paper (Refereed)
    Abstract [en]

    In this study, two-port 880MHz FPAR devicesoperating on the lowest order fast symmetric Lamb wave mode(S0) in c-oriented AlN membranes on Si, were fabricated andsubsequently tested for their power handling capabilities in afeedback-loop power oscillator circuit. The S0 Lamb waves wereexcited and detected by a classical two-port resonator structure,as in Rayleigh SAW (RSAW) resonators. Incident power levels ofup to 24 dBm (250 mW) for the FPARs were provided by a high powersustaining amplifier in the loop. No measurable performance degradation was observed. The results from this study indicate that IC-compatible S0 FPAR devices can dissipate orders of magnitude higher RF-power levels than their RSAWcounterparts on quartz and are well suited for integrated microwave power oscillators with thermal noise floor (TNF) levelsbelow -175 dBc/Hz.

  • 13.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Compositional changes during ion-assisted deposition of TixW1-x barrier layers on structured surfaces1995In: The 42nd international symposium of the American Vacuum Society, San José, USA, 1995Conference paper (Refereed)
  • 14.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Basic Understanding of the Pulsed DC Reactive Sputter Deposition Process1999In: Invited to Second Asian-European Int Conf on Plasma Surface Engineering (AEPSE´99), Beijing, September 15-19, 1999Conference paper (Refereed)
  • 15.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Preferential sputtering effects in thin film processing1999In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 17, no 4, p. 1916-1925Article in journal (Refereed)
    Abstract [en]

    Predicting the partial sputtering yield (sputtered atoms of one element/incident energetic ion) for different elements during sputtering from multielement targets:is not a straightforward task. It is commonly observed that ion bombardment of composite,tar

  • 16.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Resputtering effects during ion beam assisted deposition and the sputter yield amplification effect1996In: Surface & Coatings Technology, Vol. 84, p. 353-362Article in journal (Refereed)
  • 17.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Synergistic sputtering effects during ion bombardment with two ion species1995In: J Vac Sci Technol, Vol. A13, no 3, p. 831-833Article in journal (Refereed)
  • 18.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Basic Understanding of the Pulsed DC Reactive Spitter Deposition Process2003In: The 4th Asian-European Int Conf on Plasma Surface Engineering, AEPSE 2003, Jeju City, South Korea, September 28-October 2, 2003, 2003Conference paper (Refereed)
  • 19.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lidbaum, Hans
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Experimental Physics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Leifer, Klaus
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
    Synthesis of highly textured thin piezoelectric AlN films with a tilted c-axis2007Conference paper (Refereed)
  • 20.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Rosén, Daniel
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Dependence of the Electromechanical Coupling on the Degree of Orientation of c-Textured Thin AlN Films2003In: IEEE Ultrasonics Symposium, Honolulu, Hawaii, USA, 2003, 2003Conference paper (Refereed)
  • 21.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Synthesis of textured thin piezoelectric AlN films with a nonzero c-axis mean tilt for the fabrication of shear mode resonators2005In: Proc Int IEEE Ultrason Symp, 2005Conference paper (Other academic)
  • 22.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis of textured thin piezoelectric AlN films with a nonzero C-axis mean tilt for the fabrication of shear mode resonators2006In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 53, no 11, p. 2095-2100Article in journal (Refereed)
    Abstract [en]

    A method for the deposition of thin piezoelectric aluminum nitride (AlN) films with a nonzero c-axis mean tilt has been developed. The deposition is done in a standard reactive magnetron sputter deposition system without any hardware modifications. In essence, the method consists of a two-stage deposition process. The resulting film has a distinct tilted texture with the mean tilt of the c-axis varying roughly in the interval 28 to 32 degrees over the radius of the wafer excluding a small exclusion zone at the center of the latter. The mean tilt angle distribution over the wafer has a circular symmetry. A membrane-type shear mode thickness-excited thin film bulk acoustic resonator together with a micro-fluidic transport system has been subsequently fabricated using the two stage AIN deposition as well as standard bulk micro machining of Si. The resonator consisted of a 2-mu m-thick AlN film with 200-nm-thick A1 top and bottom electrodes. The resonator was characterized with a network analyzer when operating in both air and water. The shear mode resonance frequency was about 1.6 GHz, the extracted device Q around 350, and the electromechanical coupling k(t)(2) 2% when the resonator was operated in air, whereas the latter two dropped down to 150 and 1.8%, respectively, when the resonator was operated in pure water.

  • 23.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Design and Fabrication of Temperature Compensated Liquid FBAR Sensors2006Conference paper (Refereed)
  • 24.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Temperature compensation of liquid FBAR sensors2007In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 17, no 3, p. 651-658Article in journal (Refereed)
    Abstract [en]

    In this work we demonstrate a practically complete temperature compensation of the second harmonic shear mode in a composite Al/AlN/Al/SiO2 thin film bulk acoustic resonator (FBAR) in the temperature range 25 °C–95 °C. The main advantages of this mode are its higher Q value in liquids as well as its higher frequency and hence higher resolution for sensor applications. For comparative reasons the non-compensated fundamental shear mode is also included in these studies. Both modes have been characterized when operated both in air and in pure water. Properties such as Q value, electromechanical coupling, dissipation and sensitivity are studied. An almost complete temperature compensation of the second harmonic shear mode was observed for an oxide thickness of 1.22 µm for an FBAR consisting of 2 µm thick AlN and 200 nm thick Al electrodes. Thus, the measured temperature coefficient of frequency (TCF) in air for the non-compensated fundamental shear mode (1.25 GHz) varied between −31 and −36 ppm °C−1 over the above temperature range while that of the compensated second harmonic shear mode (1.32 GHz) varied between +2 ppm °C−1 and −2 ppm °C−1 over the same temperature interval. When operated in pure water the former type shows a Q value and coupling coefficient, k2t, around 180 and 2%, respectively, whereas for the second harmonic these are 230 and 1.4%, respectively.

  • 25.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Thin film Lamb wave resonant structures - The first approach2006In: Solid-State Electronics, ISSN 0038-1101, Vol. 50, no 3, p. 322-326Article in journal (Refereed)
    Abstract [en]

    Resonant Lamb wave based geometries on c-oriented aluminum nitride (AlN) thin film membranes are studied. Attention has been focused on the lowest order symmetric Lamb mode because of its extremely high velocity approaching 10,600 m/s. The Lamb waves have been excited by means of both inter-digital transducers (IDT) and longitudinal wave (LW) transducers. Two basic reflector geometries have been used along with the conventional one-port resonator topology. The experimental results obtained demonstrate that Lamb waves can be successfully used as an alternative to high velocity surface acoustic waves. A discussion regarding the ways for improving the device performance is provided, and hence future research aspects in the area are identified.

  • 26.
    Cho, Chong-Rae
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Grishin, M
    Grishin, A
    Na0.5K0.5NbO3 Thin Films for Voltage Controlled Acoustoelectric Device Applications2002In: Appl Phys Lett, Vol. 80, no 17, p. 3171-3173Article in journal (Refereed)
  • 27.
    Engelmark, Fredrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Iriarte, Gonzalo Fuentes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Selective Etching of Al/AlN Structures for Metallization of SAW Devices2002In: J Vac Sci Technol, Vol. B20, no 3, p. 843-Article in journal (Refereed)
  • 28.
    Engelmark, Fredrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Iriarte, Gonzalo Fuentes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Selective Etching of Al/AlN Structures for Metallization of SAW Devices2001In: Presented at AVS 2001, 2001Conference paper (Refereed)
  • 29.
    Engelmark, Fredrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Iriarte, Gonzalo Fuentes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Hårsta, Anders
    Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. oorganisk kemi.
    Smith, Ulf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition2000In: J. Vac. Sci. Technol. A, Vol. 18, no 4, p. 1609-1612Article in journal (Refereed)
  • 30.
    Engelmark, Fredrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Iriarte, Gonzalo Fuentes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Katardjiev, Ilia V
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Ottosson, M
    Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Muralt, P
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Structural and electroacoustic studies of AIN thin films during low temperature radio frequency sputter deposition2001In: J Vac Sci Technol, Vol. A19, no 5, p. 2664-2669Article in journal (Refereed)
  • 31.
    Engelmark, Fredrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Westlinder, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Iriarte Fuentes, Gonzalo
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Electrical Characterization of AlN MIS and MIM Structures2003In: IEEE Trans Electron Devices, Vol. 50, no 5, p. 1214-1219Article in journal (Refereed)
  • 32.
    Enlund, Johannes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Martin, David
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    An improved electrodeless solidly mounter thin film resonator2005In: Proc Int IEEE Ultrason Symp, 2005Conference paper (Other scientific)
  • 33.
    Enlund, Johannes
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Martin, David M.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    FBAR sensor array for in liquid operation2010In: IEEE Sensors Journal, ISSN 1530-437X, E-ISSN 1558-1748, Vol. 10, no 12, p. 1903-1904Article in journal (Refereed)
    Abstract [en]

    This letter discusses the design of thickness shear mode thin-film bulk acoustic resonator (FBAR) sensor array for in liquid operation with respect to minimizing the observed Q-degradation and crosstalk.

  • 34.
    Enlund, Johannes
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Martin, David
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yanchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Analysis of Q-degradation and Cross-Talk in BAW Sensor Arrays Operating in Conductive Liquid Media2009Conference paper (Refereed)
  • 35.
    Enlund, Johannes
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Martin, David
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Solidly mounted thin film electro-acoustic resonator utilizing a conductive Bragg reflector2008In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 141, no 2, p. 598-602Article in journal (Refereed)
    Abstract [en]

    A new design of a solidly mounted resonator (SMR) that utilizes an all-metal Bragg reflector eliminating thus the need for a bottom electrode is proposed. In this configuration, the role of the bottom electrode is taken by the Bragg reflector rendering the resonator “combined electrode-Bragg reflector SMR”. The main advantages of the proposed design are the substantially reduced electrode resistance (and hence higher Q), the utilization of the full piezoelectric coupling at high frequencies as well as expected improvement in power handling capabilities due to lower dissipation and improved heat conductivity. Resonators with the classical and the new design have been fabricated and evaluated. The measurements indicate that indeed the resonators with the new design demonstrate improved performance.

  • 36.
    Enlund, Johannes
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Electric Field Sensitivity of Thin Film Resonators Based on Piezoelectric AlN thin films2006Conference paper (Refereed)
  • 37.
    Gunningberg, Per
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Mathematics and Computer Science, Department of Information Technology, Computer Systems.
    Grönroos, Roland
    Uppsala University, Disciplinary Domain of Science and Technology, Mathematics and Computer Science, Department of Information Technology.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Voigt, Thiemo
    SICS.
    Ahlén, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signal Processing.
    Hjort, Klas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Micro Structural Technology.
    Rydberg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signal Processing.
    WISENET Wireless Sensor Networks VINN Excellence Center2007Other (Other academic)
    Abstract [en]

    This broschure was produced for the inauguration of WISENET December 7, 2007. It decribes the future impact of WISENET, application areas and the 10 partners. The three research areas "Node Integration & Energy", "Networkning & Security" and "Wireless Communication" is briefly described as well as the application projects in "Water Sensing" and "Transport".

  • 38.
    Hedlund, Christer
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl-21997In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 15, no 3, p. 686-691Article in journal (Refereed)
    Abstract [en]

    The angular dependence of the etch rate in reactive ion etching (RIE) and inductively coupled plasma (ICP) systems for polysilicon etching with SF6 and Cl-2 is determined using a recently developed direct measurement method. The latter utilizes specially

  • 39.
    Hedlund, Christer
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl21997In: The 43rd International Symposium of the American Vacuum Society, Philadelphia PA, USA, 1997Conference paper (Refereed)
  • 40.
    Hedlund, Christer
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Blom, Hans-Olof
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    A method for the determination of the angular dependence during dry etching1995In: The American Vacuum Society, 42nd National Symposium, Minneapolis, USA, Oct, 1995Conference paper (Refereed)
  • 41.
    Hedlund, Christer
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Blom, Hans-Olof
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    A Method for the Determination of the Angular Dependence during Dry Etching1996In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 14, no 5, p. 3239-Article in journal (Refereed)
  • 42. Ignatova, V A
    et al.
    Chakarov, L R
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Non-thermodynamic approach to including bombardment-induced post-cascade redistribution of point defects in dynamic Monte Carlo code2003In: Nuclear Instruments and Methods in Physics Research, Vol. B 202, p. 24-30Article in journal (Refereed)
  • 43. Ignatova, V A
    et al.
    Watjen, V
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chakarov, I R
    Comparison of dynamic simulations with RBS measurements of low energy ion implatation of Sb+ into SiO2/Si substrates2004In: Microchimica Acta, Vol. 145, p. 67-74Article in journal (Refereed)
  • 44. Ignatova, V
    et al.
    Karpuzov, D
    Chakarov, I
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Computer simulations of surface analysis using ion beams2006In: Progress in Surface Science, Vol. 81, no 6-7Article in journal (Refereed)
  • 45.
    Iriarte, Gonzalo
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Westlinder, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Engelmark, Fredrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis of c-axis-oriented AlN thin films on high-conducting layers: Al, Mo, Ti, TiN, and Ni2005In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 52, no 7, p. 1170-1174Article in journal (Refereed)
  • 46.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bjurström, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Westlinder, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, I lia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Synthesis of C-AxisOriented AlN Thin Films on Metal Layers: Al, Mo, Ti, TiN and Ni2003In: International Conference on Ultrasonics, Ferroelectrics and Frequency Control, Proceedings 1, 2003, p. 311-315Conference paper (Refereed)
  • 47.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Room temperature synthesis of c-axis oriented AlN thin piezoelectric films2001In: Presented at the AVS 2001, 2001Conference paper (Refereed)
  • 48.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia V
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Reactive Sputter Deposition of Highly Oriented AlN Films at Room Temperature2002In: J Mat Res, Vol. 17, no 6, p. 1469-1475Article in journal (Refereed)
  • 49.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Ottosson, Mikael
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. oorganisk kemi.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The Influence of the Deposition Parameters on the Stress of Magnetron Sputter Deposited AlN Thin Films on Si (100) Substrates2003In: Journal of Materials Research, Vol. 18, no 2, p. 423-Article in journal (Refereed)
  • 50.
    Johansson, Linda
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Johansson, Stefan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wiklund, M
    Dept of Applied Physics, Albanova/KTH , Stockholm.
    Yantchev, Ventislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Surface acoustic wave-induced precise particle manipulation in a trapezoidal glass microfluidic channel2012In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 22, no 2, p. 025018-Article in journal (Refereed)
    Abstract [en]

    Surface acoustic wave (SAW) excitation of an acoustic field in a trapezoidal glass microfluidic channel for particle manipulation in continuous flow has been demonstrated. A unidirectional interdigital transducer (IDT) on a Y-cut Z-propagation lithium niobate (LiNbO3) substrate was used to excite a surface acoustic wave at approximately 35 MHz. An SU8 layer was used for adhesive bonding of the superstrate glass layer and the substrate piezoelectric layer. This work extends the use of SAWs for acoustic manipulation to also include glass channels in addition to prior work with mainly poly-di-methyl-siloxane channels. Efficient alignment of 1.9 mu m polystyrene particles to narrow nodal regions was successfully demonstrated. In addition, particle alignment with only one IDT active was realized. A finite element method simulation was used to visualize the acoustic field generated in the channel and the possibility of 2D alignment into small nodal regions was demonstrated.

123 1 - 50 of 129
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf