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  • 1.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lateral-field-excited thin-film Lamb wave resonator2005In: Applied Physics Letters, ISSN 0003-6951, Vol. 86, no 15, p. 154103-Article in journal (Refereed)
    Abstract [en]

    The basic principles and technology for the development of lateral-field-excited Lamb acoustic wave resonators on sputter-deposited c-oriented thin aluminum nitride films are presented. The experimental results demonstrate that Lamb waves can be successfully used as an alternative to high-velocity surface acoustic waves.

  • 2.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lidbaum, Hans
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Experimental Physics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Leifer, Klaus
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
    Synthesis of highly textured thin piezoelectric AlN films with a tilted c-axis2007Conference paper (Refereed)
  • 3.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Rosén, Daniel
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Dependence of the Electromechanical Coupling on the Degree of Orientation of c-Textured Thin AlN Films2003In: IEEE Ultrasonics Symposium, Honolulu, Hawaii, USA, 2003, 2003Conference paper (Refereed)
  • 4.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Rosén, Daniel
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Petrov, Ivan
    Dependence of the electromechanical coupling on the degree of orientation of c-textured thin AlN films2004In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 51, no 10, p. 1347-1353Article in journal (Refereed)
  • 5.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Synthesis of textured thin piezoelectric AlN films with a nonzero c-axis mean tilt for the fabrication of shear mode resonators2005In: Proc Int IEEE Ultrason Symp, 2005Conference paper (Other academic)
  • 6.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis of textured thin piezoelectric AlN films with a nonzero C-axis mean tilt for the fabrication of shear mode resonators2006In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 53, no 11, p. 2095-2100Article in journal (Refereed)
    Abstract [en]

    A method for the deposition of thin piezoelectric aluminum nitride (AlN) films with a nonzero c-axis mean tilt has been developed. The deposition is done in a standard reactive magnetron sputter deposition system without any hardware modifications. In essence, the method consists of a two-stage deposition process. The resulting film has a distinct tilted texture with the mean tilt of the c-axis varying roughly in the interval 28 to 32 degrees over the radius of the wafer excluding a small exclusion zone at the center of the latter. The mean tilt angle distribution over the wafer has a circular symmetry. A membrane-type shear mode thickness-excited thin film bulk acoustic resonator together with a micro-fluidic transport system has been subsequently fabricated using the two stage AIN deposition as well as standard bulk micro machining of Si. The resonator consisted of a 2-mu m-thick AlN film with 200-nm-thick A1 top and bottom electrodes. The resonator was characterized with a network analyzer when operating in both air and water. The shear mode resonance frequency was about 1.6 GHz, the extracted device Q around 350, and the electromechanical coupling k(t)(2) 2% when the resonator was operated in air, whereas the latter two dropped down to 150 and 1.8%, respectively, when the resonator was operated in pure water.

  • 7.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Design and Fabrication of Temperature Compensated Liquid FBAR Sensors2006Conference paper (Refereed)
  • 8.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Temperature compensation of liquid FBAR sensors2007In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 17, no 3, p. 651-658Article in journal (Refereed)
    Abstract [en]

    In this work we demonstrate a practically complete temperature compensation of the second harmonic shear mode in a composite Al/AlN/Al/SiO2 thin film bulk acoustic resonator (FBAR) in the temperature range 25 °C–95 °C. The main advantages of this mode are its higher Q value in liquids as well as its higher frequency and hence higher resolution for sensor applications. For comparative reasons the non-compensated fundamental shear mode is also included in these studies. Both modes have been characterized when operated both in air and in pure water. Properties such as Q value, electromechanical coupling, dissipation and sensitivity are studied. An almost complete temperature compensation of the second harmonic shear mode was observed for an oxide thickness of 1.22 µm for an FBAR consisting of 2 µm thick AlN and 200 nm thick Al electrodes. Thus, the measured temperature coefficient of frequency (TCF) in air for the non-compensated fundamental shear mode (1.25 GHz) varied between −31 and −36 ppm °C−1 over the above temperature range while that of the compensated second harmonic shear mode (1.32 GHz) varied between +2 ppm °C−1 and −2 ppm °C−1 over the same temperature interval. When operated in pure water the former type shows a Q value and coupling coefficient, k2t, around 180 and 2%, respectively, whereas for the second harmonic these are 230 and 1.4%, respectively.

  • 9.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Thin film Lamb wave resonant structures - The first approach2006In: Solid-State Electronics, ISSN 0038-1101, Vol. 50, no 3, p. 322-326Article in journal (Refereed)
    Abstract [en]

    Resonant Lamb wave based geometries on c-oriented aluminum nitride (AlN) thin film membranes are studied. Attention has been focused on the lowest order symmetric Lamb mode because of its extremely high velocity approaching 10,600 m/s. The Lamb waves have been excited by means of both inter-digital transducers (IDT) and longitudinal wave (LW) transducers. Two basic reflector geometries have been used along with the conventional one-port resonator topology. The experimental results obtained demonstrate that Lamb waves can be successfully used as an alternative to high velocity surface acoustic waves. A discussion regarding the ways for improving the device performance is provided, and hence future research aspects in the area are identified.

  • 10.
    Iriarte, Gonzalo
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Westlinder, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Engelmark, Fredrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis of c-axis-oriented AlN thin films on high-conducting layers: Al, Mo, Ti, TiN, and Ni2005In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 52, no 7, p. 1170-1174Article in journal (Refereed)
  • 11.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bjurström, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Westlinder, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, I lia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Synthesis of C-AxisOriented AlN Thin Films on Metal Layers: Al, Mo, Ti, TiN and Ni2003In: International Conference on Ultrasonics, Ferroelectrics and Frequency Control, Proceedings 1, 2003, p. 311-315Conference paper (Refereed)
  • 12.
    Katardjiev, Ilia
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Martin, David
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Recent advances in the thin film electroacoustic technology2006Conference paper (Refereed)
  • 13.
    Moreira, Milena
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis and characterization of highly c-textured Al(1-x)ScxN2012In: Materials Research Society, 2012Conference paper (Refereed)
  • 14.
    Moreira, Milena
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis and characterization of wurtzite Al(1-x)ScxN thin films2012In: International Symposium on Ultrasonics, ferroelectrics and frequency control, 2012Conference paper (Refereed)
  • 15.
    Moreira, Milena
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Efficient RF voltage transformer with bandpass filter characteristics2013In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 49, no 3, p. 198-199Article in journal (Refereed)
    Abstract [en]

    A microwave bandpassfilter with a large ratio between the output andthe input impedance has been designed and fabricated. Consequently,it functions both as a voltage transformer and a bandpassfilter, or trans-filter for brevity. It represents a two-port micro-acoustic resonatoremploying Lamb waves in a thin piezoelectric AlNfilm grown ontoa Si carrier substrate with a centre frequency of around 887 MHz.The transfilter has a transformer ratio of 10 and a voltage efficiencyof over 80%. The component has a small size ( < 0.5 mm2) and isshown to sustain power levels of 250 mW. It can be used in avariety of cases where both voltage amplification and frequencyfilter-ing are required. Examples include: charge pumps in RFID tags,energy scavenging, remotely triggered switches, wake-up radios inwireless networks, stand-by units in home electronics etc.

  • 16.
    Moreira, Milena
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Kuzavas, Björn
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis of c-tilted AlN films with a good tilt and thickness uniformity2011In: Proceedings of IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM, New York, USA, 2011, p. 1238-1241Conference paper (Refereed)
    Abstract [en]

    This communication describes a method for the deposition of thin piezoelectric AlN films with an inclined c-axis relative to the surface normal. Further, the tilt over the wafer is sufficiently uniform and exhibits a planar symmetry as well as good thickness uniformity. Careful control of both the nucleation and growth stages is needed to obtain tilted films with excellent quality. Thus in the nucleation state, it is argued that two independent mechanisms, namely seed layer texture and/or surface roughness, are mainly responsible for the subsequent titled growth. To achieve the latter, however, a certain directionality of the deposition flux is also necessary. The directionality of the deposition flux is achieved through the use of an array of linear magnetrons tilted under a certain angle with respect to the substrate normal.

  • 17.
    Moreira, Milena De Albuquerque
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis and characterization of highly c-textured Al(1-x)Sc(x)N thin films in view of telecom applications2012In: More than moore: Novel materials approaches for functionalized silicon based microelectronics, 2012, p. 012014-Conference paper (Refereed)
    Abstract [en]

    Wurtzite AlN is a piezoelectric material with excellent electro-acoustic properties and is used for the fabrication of high frequency thin film micro-acoustic components, most notably filters, duplexers, resonators, etc. Its moderate electromechanical coupling coefficient (k(t)(2)) of 6%-7% is insufficient for applications requiring larger bandwidths. Recent theoretical and experimental studies indicate that AlN alloyed with Sc exhibits a substantially higher piezoelectric constant than pure AlN. This study aims at determining the main electro-acoustic parameters of Al(1-x)Sc-(x) N in view of large bandwidth applications. To this end, highly c-textured Al(1-x)Sc(x) N thin films have been synthesized with relative Sc concentrations of up to 0,15. Subsequently, FBAR resonators were fabricated and characterized as a function of the Sc content. It is seen that k(t)(2) increases linearly with the latter to a value of 12% for a Sc concentration of x=0,15, while the Q value decreases from 739 to about 348 in the same concentration range. Likewise, the TCF varies from -35,9ppm/degrees C to -39,8ppm/degrees C, while the dielectric constant increases from epsilon=10 to a value of 14,1 for x=0,15. Finally, the relative dielectric losses are seen to increase by approximately a factor of two.

  • 18.
    Rosén, Daniel
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Suppression of spurious lateral modes in thickness-excited FBAR resonators2005In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 52, no 7, p. 1189-1192Article in journal (Refereed)
  • 19.
    Rosén, Daniel
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Engelmark, Fredrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Suppression of Spurious Lateral Modes in Thickness Excited FBAR Resonators2003In: IEEE Ultrasonics Symposium, Honolulu, Hawaii, USA, 2003, 2003Conference paper (Refereed)
  • 20.
    Sharma, Gunjana
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    Liljeholm, Lina
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Hjort, Klas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Microsystems Technology.
    Fabrication and characterization of a shear mode AlN solidly mounted resonator-silicone microfluidic system for in-liquid applications2010In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 159, no 1, p. 111-116Article in journal (Refereed)
    Abstract [en]

    A shear mode AlN solidly mounted resonator (SMR) microfluidic sensor system was fabricated and characterized. The AlN SMR fabrication process is fully IC compatible and uses reactive sputtering to deposit piezoelectric AlN thin films with a non-zero mean inclination of the c-axis, which allows in-liquid operation through the excitation of the shear mode. Silicone encapsulation bonded on top of the Si sensor chip includes a microfluidic system to transport the analyte and confine the flow to the active area of the sensor chip. The sensor operation in air, water, glycerol and acetone was characterized. The resonator had a resonance frequency of around 1.2 GHz and a Q value in water of around 100. Results concerning the stability and resolution are also presented. The results indicate a potential of highly sensitive low-cost microfluidic sensor systems for applications in, e.g. point-of-care testing.

  • 21.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Hellgren, A-C
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Immunosensor utilizing a shear mode thin film bulk acoustic sensor2007In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 127, no 1, p. 248-252Article in journal (Refereed)
    Abstract [en]

    An AlN thin film electro-acoustic resonator has been fabricated employing a reactive sputtering process for the deposition of an AlN thin film with inclined c-axis for excitation of the shear mode for operation in liquid media. The main objective is to investigate the efficiency of the micro-fluidic channel system integrated in the silicon wafer underneath the AlN resonator. A comparative study between the shear mode thin film bulk acoustic resonator (FBAR) and a quartz crystal microbalance (QCM) using a competitive antibody–antigen association process for detection of drug molecules is presented.

  • 22.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Hellgren, A-C
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Immunosensor utilizing Shear mode thin film bulk acoustic sensor2006Conference paper (Refereed)
  • 23.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Shear mode AlN thin film electroacoustic resonator for biosensor applications2005In: Proceedings International IEEE Ultrasonsonics Symposium, 2005Conference paper (Other academic)
  • 24.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Liljeholm, Lina
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Shear mode AlN thin film electro-acoustic resonant sensor operation in viscous media2007In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 123, no 1, p. 466-473Article in journal (Refereed)
    Abstract [en]

    A shear mode thin film bulk acoustic resonator (FBAR) operating in liquid media together with a microfluidic transport system is presented. The resonator has been fabricated utilizing a recently developed reactive sputter-deposition process for AlN thin films with inclined c-axis relative to the surface normal with a mean tilt of around 30°. The resonator has a resonance frequency of around 1.2 GHz and a Q value in water of around 150. Sensor operation in water and glycerol solutions is characterized. Theoretical analysis of the sensor operation under viscous load as well as of the sensitivity and stability in general is presented. The theoretical predictions are compared with experimental measurements. The results demonstrate clearly the potential of FBAR biosensors for the fabrication of highly sensitive low cost biosensors, bioanalytical tools as well as for liquid sensing in general.

  • 25.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Thin film bulk acoustic resonators (FBARs) for biosensor applications2008Conference paper (Refereed)
  • 26.
    Yantchev, Ventsislav
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Electroacoustic Devices utilizing the Lower GHz Frequency band based on High-velocity Laterally propagating Modes in c-oriented AlN thin film membranes -: a Comparative Study2005In: Proc. 2005 Gigahertz Symp., Uppsala, Sweden, October 2005, 2005Conference paper (Other academic)
  • 27.
    Yantchev, Ventsislav
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Design of high frequency piezoelectric resonators utilizing laterally propagating fast modes in thin aluminum nitride (AlN) films2006In: Ultrasonics, ISSN 0041-624X, E-ISSN 1874-9968, Vol. 45, no 1-4, p. 208-212Article in journal (Refereed)
    Abstract [en]

    Highly c-oriented aluminum nitride (AlN) thin piezoelectric films have been grown by pulsed direct-current (DC) magnetron reactive sputter deposition. The films were deposited at room temperature and had a typical full width half maximum (FWHM) value of the (0 0 2) rocking curve of around 2°. Resonant devices in thin film plates having surface acoustic wave (SAW) based designs were fabricated by means of low resolution photolithography. The devices were designed to operate with the fast Rayleigh and Lamb modes respectively. Both types of devices exhibited propagation velocities in excess of 10 000 m/s and sufficient electromechanical couplings. The device measurements illustrate the big potential of these modes for the development of low cost IC compatible electroacoustic devices in the lower GHz range. The basic properties of the modes studied are discussed in a comparative manner. Potential commercial applications are also outlined.

1 - 27 of 27
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