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  • 1.
    Anderson, Henrik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Weissbach, Thomas
    Attana AB, Stockholm.
    Wallinder, Daniel
    Attana AB, Stockholm.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Ingemarsson, Björn
    Attana AB, Stockholm.
    Systematic investigation of biomolecular interactions using combined frequency and motional resistance measurements2011In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 153, no 1, p. 135-144Article in journal (Refereed)
    Abstract [en]

    The resonance frequency of acoustic biosensors is today used as a label-free technique for detecting mass changes on sensor surfaces. In combination with an appropriate continuous flow system it has earlier been used for affinity and kinetic rate determination. Here, we assess the potential of a modified acoustic biosensor, monitoring also the real-time dissipation through the resistance of the sensor, to obtain additional kinetic information related to the structure and conformation of the molecules on the surface. Actual interaction studies, including an attempt to determine avidity, are presented along with thorough verification of the experimental setup utilizing true viscous load exposure together with protein and DNA immobilizations. True viscous loads show a linear relationship between resistance and frequency as expected. However, in the interaction studies between antibodies and proteins, as well as in the immobilization of DNA and proteins, higher surface concentrations of interacting molecules led to a decrease (i.e. deviation from the linear trend) in the differential resistance to frequency ratio. This is interpreted as increased surface rigidity at higher surface concentrations of immobilized molecules. Consequently, studies that aim at obtaining biological binding information, such as avidity, from real-time resistance and dissipation data should be conducted at low surface concentrations. In addition, the differential resistance to frequency relationship was found to be highly dependent on the rigidity of the preceding layer(s) of immobilized molecules. This dependence can be utilized to obtain a higher signal-to-noise ratio for resistance measurement by using low surface densities of immobilized interaction partners.

  • 2.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lidbaum, Hans
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Experimental Physics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Leifer, Klaus
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
    Synthesis of highly textured thin piezoelectric AlN films with a tilted c-axis2007Conference paper (Refereed)
  • 3.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Synthesis of textured thin piezoelectric AlN films with a nonzero c-axis mean tilt for the fabrication of shear mode resonators2005In: Proc Int IEEE Ultrason Symp, 2005Conference paper (Other academic)
  • 4.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Synthesis of textured thin piezoelectric AlN films with a nonzero C-axis mean tilt for the fabrication of shear mode resonators2006In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, E-ISSN 1525-8955, Vol. 53, no 11, p. 2095-2100Article in journal (Refereed)
    Abstract [en]

    A method for the deposition of thin piezoelectric aluminum nitride (AlN) films with a nonzero c-axis mean tilt has been developed. The deposition is done in a standard reactive magnetron sputter deposition system without any hardware modifications. In essence, the method consists of a two-stage deposition process. The resulting film has a distinct tilted texture with the mean tilt of the c-axis varying roughly in the interval 28 to 32 degrees over the radius of the wafer excluding a small exclusion zone at the center of the latter. The mean tilt angle distribution over the wafer has a circular symmetry. A membrane-type shear mode thickness-excited thin film bulk acoustic resonator together with a micro-fluidic transport system has been subsequently fabricated using the two stage AIN deposition as well as standard bulk micro machining of Si. The resonator consisted of a 2-mu m-thick AlN film with 200-nm-thick A1 top and bottom electrodes. The resonator was characterized with a network analyzer when operating in both air and water. The shear mode resonance frequency was about 1.6 GHz, the extracted device Q around 350, and the electromechanical coupling k(t)(2) 2% when the resonator was operated in air, whereas the latter two dropped down to 150 and 1.8%, respectively, when the resonator was operated in pure water.

  • 5.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Design and Fabrication of Temperature Compensated Liquid FBAR Sensors2006Conference paper (Refereed)
  • 6.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Temperature compensation of liquid FBAR sensors2007In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 17, no 3, p. 651-658Article in journal (Refereed)
    Abstract [en]

    In this work we demonstrate a practically complete temperature compensation of the second harmonic shear mode in a composite Al/AlN/Al/SiO2 thin film bulk acoustic resonator (FBAR) in the temperature range 25 °C–95 °C. The main advantages of this mode are its higher Q value in liquids as well as its higher frequency and hence higher resolution for sensor applications. For comparative reasons the non-compensated fundamental shear mode is also included in these studies. Both modes have been characterized when operated both in air and in pure water. Properties such as Q value, electromechanical coupling, dissipation and sensitivity are studied. An almost complete temperature compensation of the second harmonic shear mode was observed for an oxide thickness of 1.22 µm for an FBAR consisting of 2 µm thick AlN and 200 nm thick Al electrodes. Thus, the measured temperature coefficient of frequency (TCF) in air for the non-compensated fundamental shear mode (1.25 GHz) varied between −31 and −36 ppm °C−1 over the above temperature range while that of the compensated second harmonic shear mode (1.32 GHz) varied between +2 ppm °C−1 and −2 ppm °C−1 over the same temperature interval. When operated in pure water the former type shows a Q value and coupling coefficient, k2t, around 180 and 2%, respectively, whereas for the second harmonic these are 230 and 1.4%, respectively.

  • 7.
    Katardjiev, Ilia
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Martin, David
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Recent advances in the thin film electroacoustic technology2006Conference paper (Refereed)
  • 8.
    Kubart, Tomas
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Zhao, Shuxi
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Wäckelgård, Ewa
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Physics.
    A model of DC reactive magnetron sputtering for graded solar thermal absorbers2008In: Journal of Physics, Conference Series, ISSN 1742-6588, E-ISSN 1742-6596, Vol. 100, no 8, p. 082024-Article in journal (Refereed)
    Abstract [en]

    In this work we present process modelling of reactive in-line sputtering. Although modelling of reactive sputtering is often used, most models are based on assumptions which make them insufficient for use in this case. The presented model takes into account a realistic deposition rate profile and distribution of reactive gas pressure. The model has been applied to reactive sputter deposition of graded solar thermal absorbers. It has been shown that the presented model represents a simple alternative to complex Monte Carlo simulations while still representing all important features of the process.

  • 9. Lloyd Spetz, A
    et al.
    Nakagomi, S
    Wingbrant, H
    Andersson, M
    Salomonsson, A
    Roy, S
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Eickhoff, M
    Uvdal, K
    Yakimova, R
    New materials for chemical and biosensors2006In: Materials and Manufactoring Processes, Vol. 21, no 3, p. 253-256Article in journal (Refereed)
  • 10.
    Nakagomi, Shinji
    et al.
    Ishinomaki Senshu University.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Åbom, Anna Elisabeth
    Helmersson, Ulf
    Lloyd Spetz, Anita
    Hydrogen sensing by NKN thin film with high dielectric constant and ferroelectric property2005In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 108, no 1-2, p. 490-495Article in journal (Refereed)
    Abstract [en]

    Hydrogen sensing properties of sodium potassium niobate NaxKyNbOz (NKN) thin films were studied. The NKN thin films were prepared by reactive rf magnetron sputtering. NKN is a ferroelectric material with high dielectric constant. The polarization increases in hydrogen ambient and decreases in oxygen ambient. The conductivity of the NKN film in hydrogen ambient is higher than in oxygen ambient, and these changes are reversible. The threshold voltage of the current–voltage (IV) characteristics depends on the hydrogen concentration, and a large response of 3.3 V was obtained.

  • 11. Wingbrandt, H
    et al.
    Andersson, M
    Salomonsson, A
    Roy, S
    Wingqvist, Gunilla
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Eickhoff, M
    Nakagomi, S
    New Materials for chemical and biosensors2004In: International Symposium on Advanced Materials and Processing, ISAMAP2K4, 6-8 December, I.I. T., Kharagpur, India, 2004Conference paper (Other scientific)
  • 12.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Andersson, Henrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lennartsson, Christian
    iv. Applied Physics, Dep. Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lloyd Spetz, Anita
    Div. Applied Physics, Dep. Physics, Chemistry and Biology, Linkoping University, Linkoping, Sweden.
    On the applicability of high frequency acoustic shear mode biosensing in view of thickness limitations set by the film resonance2009In: Biosensors & bioelectronics, ISSN 0956-5663, E-ISSN 1873-4235, Vol. 24, no 11, p. 3387-3390Article in journal (Refereed)
    Abstract [en]

    The IC-compatible thin film bulk acoustic resonator (FBAR) technology has made it possible to move the thickness excited shear mode sensing of biological layers into a new sensing regime using substantially higher operation frequencies than the conventionally used Quartz Crystal Microbalance (QCM). The limitations of the linear range set by the film resonance using viscoelastic protein films are here for the first time addressed specifically for FBARs operating at 700MHz up to 1.5GHz. Two types of protein multilayer sensing were employed; one utilizing alternating layers of Streptavidin and Biotinated BSA and the other using stepwise cross-linking of fibrinogen with EDC/NHS activation of its carboxyl groups. In both cases the number of protein layers within the linear regime is well above the number of protein layers usually used in biosensor applications, further verifying the applicability of the FBAR as a biosensor. Theoretical calculations are also presented using well established physical models to illustrate the expected behavior of the FBAR sensor, in view of both the frequency and the dissipation shifts.

  • 13.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Arapan, Lilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yanchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Temperature Compensation of Thin Film Resonators utilizing the Lowest order Symmetric Lamb mode2008In: Proc. 2008 Int. IEEE Ultrason. Symp., 2008 Beijing, China, 2008Conference paper (Refereed)
  • 14.
    Wingqvist,, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Arapan, Lilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Temperature Compensation of Thin Film Resonators utilizing the Lowest order Symmetric Lamb mode2008Conference paper (Other academic)
    Abstract [en]

    Micromachined Thin film plate acoustic wave resonators (FPAR) utilizing the lowest order symmetric Lamb wave (S0) propagating in highly textured 2μm thick Aluminum Nitride (AlN) membranes have been successfully demonstrated[1]. However, a notable drawback of the proposed devices is their non-zero temperature coefficient of frequency (TCF) which lies in the range -20 ppm/K to –25 ppm/K. In this work temperature compensation of thin AlN film Lamb wave resonators is studied and demonstrated. Temperature compensation, while retaining at the same time the device electromechanical coupling, isexperimentally demonstrated. The zero TCF Lamb wave resonators are fabricated onto composite AlN/SiO2 membranes. Q factors of around 1400 have been measured at a frequency of around 755 MHz.

  • 15.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Arapan, Lilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Micromachined thermally compensated thin film Lamb wave resonator for frequency control and sensing applications2009In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 19, no 3, p. 035018-Article in journal (Refereed)
    Abstract [en]

    Micromachined thin film plate acoustic wave resonators (FPAR) utilizing the lowest order symmetric Lamb wave (S0) propagating in highly textured 2μm thick Aluminum Nitride (AlN) membranes have been successfully demonstrated [1]. The proposed devices have a SAW-based design and exhibit Q factors of up to 3000 at a frequency around 900MHz as well as design flexibility with respect to the required motional resistance. However, a notable drawback of the proposed devices is non-zero temperature coefficient of frequency (TCF) which lies in the range -20 ppm/K to –25 ppm/K. Thus, despite the promising features demonstrated, further device optimization is required. In this work temperature compensation of thin AlN film Lamb wave resonators is studied and experimentally demonstrated. Temperature compensation while retaining at the same time the device electromechanical coupling is experimentally demonstrated. The zero TCF Lamb wave resonators are fabricated onto composite AlN/SiO2 membranes. Q factors of around 1400 have been measured at a frequency of around 755 MHz. Finally, the impact of technological issues on the device performance is discussed in view of improving the device performance.

  • 16.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Hellgren, A-C
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Immunosensor utilizing a shear mode thin film bulk acoustic sensor2007In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 127, no 1, p. 248-252Article in journal (Refereed)
    Abstract [en]

    An AlN thin film electro-acoustic resonator has been fabricated employing a reactive sputtering process for the deposition of an AlN thin film with inclined c-axis for excitation of the shear mode for operation in liquid media. The main objective is to investigate the efficiency of the micro-fluidic channel system integrated in the silicon wafer underneath the AlN resonator. A comparative study between the shear mode thin film bulk acoustic resonator (FBAR) and a quartz crystal microbalance (QCM) using a competitive antibody–antigen association process for detection of drug molecules is presented.

  • 17.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Hellgren, A-C
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Immunosensor utilizing Shear mode thin film bulk acoustic sensor2006Conference paper (Refereed)
  • 18.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Shear mode AlN thin film electroacoustic resonator for biosensor applications2005In: Proceedings International IEEE Ultrasonsonics Symposium, 2005Conference paper (Other academic)
  • 19.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Liljeholm, Lina
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Shear mode AlN thin film electro-acoustic resonant sensor operation in viscous media2007In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 123, no 1, p. 466-473Article in journal (Refereed)
    Abstract [en]

    A shear mode thin film bulk acoustic resonator (FBAR) operating in liquid media together with a microfluidic transport system is presented. The resonator has been fabricated utilizing a recently developed reactive sputter-deposition process for AlN thin films with inclined c-axis relative to the surface normal with a mean tilt of around 30°. The resonator has a resonance frequency of around 1.2 GHz and a Q value in water of around 150. Sensor operation in water and glycerol solutions is characterized. Theoretical analysis of the sensor operation under viscous load as well as of the sensitivity and stability in general is presented. The theoretical predictions are compared with experimental measurements. The results demonstrate clearly the potential of FBAR biosensors for the fabrication of highly sensitive low cost biosensors, bioanalytical tools as well as for liquid sensing in general.

  • 20.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, J.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Mass Sensitivity of Thin Film Resonator Device2007Conference paper (Refereed)
  • 21.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Bjurström, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Thin film bulk acoustic resonators (FBARs) for biosensor applications2008Conference paper (Refereed)
  • 22.
    Wingqvist, Gunilla
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Mass sensitivity of multilayer thin film resonant BAW sensors2008In: Sensors and Actuators A-Physical, ISSN 0924-4247, E-ISSN 1873-3069, Vol. 148, no 1, p. 88-95Article in journal (Refereed)
    Abstract [en]

    Abstract: A systematic study of the mass sensitivity and its dependence on the material's properties and thicknesses in composite multilayer Thin Film Bulk Acoustic Resonators (FBAR) is presented. The Mason transmission line model has been employed in combination with the acoustic energy balance principle for the determination of the FBAR mass sensitivity. The results have been experimentally verified. Further, the mass sensitivity dependence on various parameters has been studied and correlated with wave reflection and interference within the composite structure in addition to the well-known dependence on resonator acoustic impedance and operation frequency. The mass sensitivity for both the fundamental and the second harmonic mode of operation has been studied in view of their practical relevance. In particular, sensitivity amplification induced by the presence of an on-top deposited low acoustic impedance layer has been identified for the first harmonic and its potential applicability discussed in terms of gas and in-liquid sensing. Optimized structures for both sensing applications are suggested by considering the overall sensor resolution defined by both the mass sensitivity and the FBAR performance.

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