uu.seUppsala University Publications
Change search
Refine search result
12 1 - 50 of 85
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the 'Create feeds' function.
  • 1.
    Abou-Ras, Daniel
    et al.
    Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany..
    Wagner, Sigurd
    Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA..
    Stanbery, Bill J.
    Siva Power, 5102 Calle Sol, Santa Clara, CA 95054 USA..
    Schock, Hans-Werner
    Helmholtz Zentrum Berlin Mat & Energie GmbH, Hahn Meitner Pl 1, D-14109 Berlin, Germany..
    Scheer, Roland
    Martin Luther Univ Halle Wittenberg, Inst Phys, Photovolta Grp, D-06120 Halle, Saale, Germany..
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Solibro Res AB, Sweden.
    Siebentritt, Susanne
    Univ Luxembourg, Phys & Mat Sci Res Unit, Lab Photovolta, Belvaux, Luxembourg..
    Lincot, Daniel
    CNRS EDF Chim Paristech PSL, Inst Photovolta Ile France IPVF, IRDEP, 6 Quai Watier, F-78401 Chatou, France..
    Eberspacher, Chris
    Solopower Syst Inc, Corp & Mfg Headquarters, 6308 North Marine Dr, Portland, OR 97203 USA..
    Kushiya, Katsumi
    Solar Frontier KK, 123-1 Shimo Kawairi, Atsugi, Kanagawa, Japan..
    Tiwari, Ayodhya N.
    Empa Swiss Fed Labs Mat Sci & Technol, Lab Thin Films & Photovolta, Ueberlandstr 129, CH-8600 Dubendorf, Switzerland..
    Innovation highway: Breakthrough milestones and key developments in chalcopyrite photovoltaics from a retrospective viewpoint2017In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 633, p. 2-12Article in journal (Refereed)
    Abstract [en]

    The present contribution is a summary of an event that was organized as a special evening session in Symposium V "Chalcogenide Thin-Film Solar Cells" at the E-MRS 2016 Spring Meeting, Lille, France. The presentations in this session were given by the coauthors of this paper. These authors present retrospectives of key developments in the field of Cu(In,Ga)(S,Se)(2) solar cells as they themselves had witnessed in their laboratories or companies. Also, anecdotes are brought up, which captured interesting circumstances in that evolutionary phase of the field. Because the focus was on historical perspectives rather than a comprehensive review of the field, recent developments intentionally were not addressed.

  • 2.
    Bodegard, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rockett, Angus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The behaviour of Na implanted into Mo thin films during annealing1999In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, ISSN 0927-0248, Vol. 58, no 2, p. 199-208Article in journal (Refereed)
    Abstract [en]

    Na implants have been used to study diffusion of Na in rf diode sputtered Mo thin films used as back contacts for Cu(In,Ga)Se, solar cells. The samples were analysed with secondary ion mass spectrometry before and after vacuum anneals at 420 degrees C and

  • 3.
    Bodegård, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Growth of Cu(In,Ga)Se2 thin films by coevaporation using alkaline precursors2000In: Thin Solid Films, Vol. 361-362, p. 9-16Article in journal (Refereed)
  • 4.
    Bodegård, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Growth of Cu(In,Ga)Se2 thin films by coevaporation using alkaline precursos1999In: E-MRS Spring Meeting, Strasbourg, France, June 1-4, 1999, 1999Conference paper (Refereed)
  • 5.
    Bodegård, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lundberg, Olle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Growth of Coevaporated Cu(In,Ga)Se2 - The Influence of Rate Profiles on Film Morphology2001In: Mat. Res. Soc. Symp. Proc. 668, H2.2.1-H2.2.12, 2001Conference paper (Refereed)
  • 6.
    Bodegård, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lundberg, Olle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Analytisk materialfysik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Re-crystallisation and interdiffusion in CGS/CIS bilayers2003In: Thin Solid Films, Vol. 431-432, p. 46-52Article in journal (Refereed)
  • 7.
    Bodegård, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Fasta tillståndets elektronik.
    Lundberg, Olle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Fasta tillståndets fysik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Fasta tillståndets elektronik.
    Re-crystallisation and Interdiffusion in CGS/CIS Bilayers2002In: Proc E-MRS, June, Strasbourg, France, 2002Conference paper (Refereed)
  • 8.
    Bodegård, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lundberg, Olle
    Fasta tillståndets elektronik.
    Malmström, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rockett, Angus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    High voltage Cu(In,Ga)Se2 devices with Ga-profiling fabricated using co-evaporation2000In: Proceedings of the 28th IEEE Photovoltaic Specialists Conference, 2000, p. 430-433Conference paper (Refereed)
  • 9.
    Donzel-Gargand, Olivier
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Thersleff, T.
    Stockholm University, Department of Materials and Environmental Chemistry 106 91 Stockholm.
    Keller, Jan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Törndahl, Tobias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Larsson, Fredrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wallin, E.
    Solibro Research AB, Vallvägen 5, Uppsala, Sweden.
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Solibro Research AB, Vallvägen 5, Uppsala, Sweden.
    Edoff, Marika
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Cu-depleted patches induced by presence of K during growth of CIGS absorbers2017Conference paper (Refereed)
    Abstract [en]

    The conversion efficiency of the CIGS thin film solar cells has rapidly increased since introduction of the heavier alkali-doping (K, Rb, Cs). While the exclusive introduction of Na in the CIGS films has led to efficiencies up to 20,4% 1, the latest K, Rb or Cs post deposition treatments (PDT) have increased the efficiency to 22,6% 2. The exact role of this heavy-alkali PDT is still under discussion but three explanations have been discussed in the literature. First, that the heavy alkali PDT facilitates CdCu substitution, that results in an enhanced absorber type inversion, moving the p-n junction further into the CIGS bulk 3. Second, that the main effect from heavy alkali PDT is due to the formation of a K-In-Se2 layer, that passivates defects at the CIGS surface, reducing interface recombination 4. And third, that the heavy alkali PDT induces a Cu depletion at the surface of the CIGS which, by increasing the local Fermi level, increases the band bending; thus creating a higher potential barrier for holes to recombine 5.

  • 10. Dullweber, T
    et al.
    Lundberg, Olle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Malmström, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rau, U
    Schock, H W
    Werner, J H
    Back surface bandgap gradings in Cu(In,Ga)Se2 solar cells2001In: Thin Solid Films, Vol. 387, p. 11-13Article in journal (Refereed)
  • 11. Dullweber, T
    et al.
    Lundberg, Olle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Malmström, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rau, U
    Schock, H-W
    Werner, J H
    Back surface band gap gradings in Cu(In,Ga)Se2 solar cells2000In: E-MRS, Strasbourgh, May 30 - June 2, 2000Conference paper (Refereed)
  • 12.
    Edoff, Marika
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Jarmar, Tobias
    Solibro Res AB, S-75651 Uppsala, Sweden..
    Shariati Nilsson, Nina
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wallin, Erik
    Solibro Res AB, S-75651 Uppsala, Sweden..
    Hogstrom, Daniel
    Solibro Res AB, S-75651 Uppsala, Sweden..
    Stolt, Olof
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lundberg, Olle
    Solibro Res AB, S-75651 Uppsala, Sweden..
    Shafarman, William
    Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA..
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Solibro Res AB, S-75651 Uppsala, Sweden..
    High Voc in (Cu,Ag)(In,Ga)Se2 Solar Cells2017In: IEEE Journal of Photovoltaics, ISSN 2156-3381, E-ISSN 2156-3403, Vol. 7, no 6, p. 1789-1794Article in journal (Refereed)
    Abstract [en]

    In this contribution, we show that silver substitution for copper in Cu(In,Ga)Se-2 (CIGS) to form (Ag,Cu)(In, Ga)Se-2 (ACIGS) leads to a reduction of the voltage loss expressed as E-g/q-V-oc. This, in turn, leads to higher device efficiencies as compared to similar CIGS devices without Ag. We report V-oc at 814 mV at a conversion efficiency of 21% for our best ACIGS device with 20% of the group I element consisting of silver. Comparing ACIGS and CIGS devices with the same Ga/(Ga+ In) ratio, the ACIGS devices exhibit about 0.05 eV higher bandgap. Alkali postdeposition treatment with KF leads to improvements in efficiency both for CIGS and ACIGS, but we find that the dose of KF needed for optimum device for ACIGS is 10-20% of the dose used for CIGS.

  • 13.
    Edoff, Marika
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Malmberg, Lina
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Malm, Ulf
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Influence of CBD-deposited CdS on the carrier collection in CIGS-based solar cells2006Conference paper (Refereed)
  • 14.
    Edoff, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Woldegiorgis, Sara
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Neretnicks, Peter
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Ruth, Marta
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    CIGS Submodules with High Performance and High Manufacturability2004In: 19th European Photovoltaic Solar Energy Conference and Exhibition, Paris, 7-11 June, 2004Conference paper (Other scientific)
  • 15.
    Granath, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegard, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The effect of NaF on Cu(In, Ga)Se-2 thin film solar cells2000In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, ISSN 0927-0248, Vol. 60, no 3, p. 279-293Article in journal (Refereed)
    Abstract [en]

    This work investigates NaF, on Mo coated sodium barrier glass, as a sodium precursor for the growth of Cu(In, Ga)Se-2 for thin him solar cells. These precursor layers are investigated by X-ray photoelectron spectroscopy (XPS) before and after annealing, a

  • 16.
    Granath, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rockett, Angus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schroeder, D J
    Sodium in Sputtered Mo Back Contacts for Cu(In,Ga)Se2 Devices: Incorporation, Diffusion and Relationship to Oxygen1997In: The 14th European Photovoltaic Solar Energy Conf. 1278, Barcelona Spain, 1997Conference paper (Refereed)
  • 17. Igalson, M
    et al.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Recombination centers in the Cu(In,Ga)Se2-based photovoltaic devices2003In: J Phys Chem Solids, Vol. 64, p. 2041-2045Article in journal (Refereed)
  • 18. Igalson, M
    et al.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells2003In: Solar Energy Materials and Solar Cells, Vol. 80, no 2, p. 195-207Article in journal (Refereed)
  • 19. Igalson, M
    et al.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jasenek, A
    The ”defected layer” and the mechanism of the interface-related metastable behavior in the ZnO/CdS/Cu(In,Ga)Se2 devices2003In: Thin Solid Films, Vol. 431-432, p. 153-157Article in journal (Refereed)
  • 20. Igalson, M
    et al.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    DLTS spectra of thin film photovoltaic devices based on Cu(In,Ga)21997In: The 14th European Photovoltaic Conf. 2153, 1997Conference paper (Refereed)
  • 21.
    Johansson, E
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Platzer-Björkman, C
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Rensmo, H
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Sandell, A
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Siegbahn, Hans
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Gorgoi, M
    Svensson, S
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics. Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Lewin, Erik
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Schäfers, F
    Braun, W
    Eberhardt, W
    HIKE experiments at KMC-1: Studies of Solar Cell Materials2007In: Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H. (BESSY) Annual Report (2006), no 508-509Article in journal (Refereed)
  • 22.
    Keller, Jan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Chalvet, Francis
    Solibro Res AB, Vallvagen 5, S-75151 Uppsala, Sweden.
    Joel, Jonathan
    Solibro Res AB, Vallvagen 5, S-75151 Uppsala, Sweden.
    Aijaz, Asim
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Riekehr, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Edoff, Marika
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics. Solibro Res AB, Vallvagen 5, S-75151 Uppsala, Sweden.
    Törndahl, Tobias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Effect of KF absorber treatment on the functionality of different transparent conductive oxide layers in CIGSe solar cells2018In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 26, no 1, p. 13-23Article in journal (Refereed)
    Abstract [en]

    This contribution studies the impact of the KF-induced Cu(In,Ga)Se2 (CIGSe) absorber modification on the suitability of different transparent conductive oxide (TCO) layers in solar cells. The TCO material was varied between ZnO:Al (AZO), ZnO:B (BZO), and In2O3:H (IOH). It is shown that the thermal stress needed for optimized TCO properties can establish a transport barrier for charge carriers, which results in severe losses in fill factor (FF) for temperatures >150°C. The FF losses are accompanied by a reduction in open circuit voltage (Voc) that might originate from a decreased apparent doping density (Nd,app) after annealing. Thermally activated redistributions of K and Na in the vicinity of the CdS/(Cu,K)-In-Se interface are suggested to be the reason for the observed degradation in solar cell performance. The highest efficiency was measured for a solar cell where the absorber surface modification was removed and a BZO TCO layer was deposited at a temperature of 165°C. The presented results highlight the importance of well-designed TCO and buffer layer processes for CIGSe solar cells when a KF post deposition treatment (KF-PDT) was applied.

  • 23.
    Keller, Jan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Gustavsson, Fredrik
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Edoff, Marika
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Törndahl, Tobias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    On the beneficial effect of Al2O3 front contact passivation in Cu(In,Ga)Se2 solar cells2017In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, E-ISSN 1879-3398, Vol. 159, p. 189-196Article in journal (Refereed)
    Abstract [en]

    This study reports on the beneficial effect of an absorber surface passivation by Al2O3 on the performance of Cu(In, Ga)Se-2 (CIGSe) solar cells. Here the Al2O3 layer is deposited by atomic layer deposition (ALD) subsequently to a CdS buffer layer. It is shown that a very thin film of about 1 nm efficiently reduces the interface recombination rate if the buffer layer is too thin to not fully cover the CIGSe absorber. An Al2O3 thickness of 1 nm is sufficiently low to allow current transport via tunneling. Increasing the thickness to > 1 nm leads to a detrimental blocking behavior due to an exponentially decreasing tunnel current. Losses in open circuit voltage (V-oc) and fill factor (FF) when reducing the buffer layer thickness are significantly mitigated by implementing an optimized Al2O3 layer. It is further shown, that the heat treatment during the ALD step results in an increase in short circuit current density (J(sc)) of about 2 mA/cm(2). This observation is attributed to a widening of the space charge region in the CIGSe layer that in turn improves the collection probability of electrons. For not fully covering CdS layers the decrease in interface defect density by the passivation contributes as well, leading to a gain of about 5 mA/cm2 for cells without a buffer. Finally, the leakage current of the solar cell devices could be reduced when applying the Al2O3 layer on insufficiently covering CdS films, which proves the capability of mitigating the effect of shunts or bad diodes.

  • 24.
    Keller, Jan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lindahl, Johan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Edoff, Marika
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Törndahl, Tobias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Potential gain in photocurrent generation for Cu(In,Ga)Se2 solar cells by using In2O3 as a transparent conductive oxide layer2016In: Progress in Photovoltaics, ISSN 1062-7995, E-ISSN 1099-159X, Vol. 24, no 1, p. 102-107Article in journal (Refereed)
    Abstract [en]

    This study highlights the potential of atomic layer deposited In2O3 as a highly transparent and conductive oxide (TCO)layer in Cu(In,Ga)Se2 (CIGSe) solar cells. It is shown that the efficiency of solar cells which use Zn-Sn-O (ZTO) as an alternativebuffer layer can be increased by employing In2O3 as a TCO because of a reduction of the parasitic absorption inthe window layer structure, resulting in 1.7 mA/cm2 gain in short circuit current density (Jsc). In contrast, a degradation ofdevice properties is observed if the In2O3 TCO is combined with the conventional CdS buffer layer. The estimated improvementfor large-scale modules is discussed.

  • 25.
    Keller, Jan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Edoff, Marika
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Törndahl, Tobias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Atomic layer deposition of In2O3 transparent conductive oxide layers for application in Cu(In,Ga)Se2 solar cells with different buffer layers2016In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 213, no 6, p. 1541-1552Article in journal (Refereed)
    Abstract [en]

    This contribution presents the development of atomic layer deposited (ALD) In2O3 films for utilization as transparent conductive oxide (TCO) layers in Cu(In,Ga)Se2 (CIGSe) solar cells. The effects of ALD process parameters on the morphology and growth of In2O3 are studied and related to the electrical and optical properties of the films. Maintaining similar resistivity values compared to commonly used ZnO:Al (AZO) TCOs (ρ = (5–7) × 10−4 Ωcm), a superior mobility of μ ≈ 110 cm2/Vs could be achieved (more than five times higher than a ZnO:Al reference), which results in a significantly reduced parasitic optical absorption in the infrared region. Application of the optimized In2O3 layers in CIGSe solar cells with varying buffer layers (CdS and Zn1–xSnxOy (ZTO)) leads to a distinct improvement in short circuit current density Jsc in both cases. While for solar cells containing the ZTO/In2O3 window structure, a drop in open-circuit voltage Voc and a deterioration under illumination is observed, the TCO exchange (from AZO to In2O3) on CdS buffer layers results in an increase in Voc without detectable light bias degradation. The efficiency η of the best corresponding solar cells could be improved by about 1% absolute.

  • 26.
    Keränen, J
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. ANALYTICAL MATERIAL PHYSICS.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets fysik.
    Barnard, J
    Sterner, Jan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Matthes, Th W
    Olsson, E
    Effect of Sulfurization on the Microstructure of Chalcopyrite Thin Film Absorbers2001In: Thin Solid Films, Vol. 387, p. 80-82Article in journal (Refereed)
  • 27.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Baseline Cu(In,Ga)Se2 Device Production: Control and Statistical Significance1999In: 11th International Photovoltaic Science and Engineering Conference, Sapporo, Japan, September 20-24, 1999Conference paper (Refereed)
  • 28.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Baseline Cu(In,Ga)Se2 Device Production: Control and Statistical Significance2001In: Solar Energy Materials & Solar Cells, Vol. 67, p. 67-76Article in journal (Refereed)
  • 29.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Cu(In,Ga)Se2 devices: From cells to minimodules2000In: E-MRS, Strasbourgh, May 30 – June 2, 2000Conference paper (Refereed)
  • 30.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    New world record Cu(In,Ga)Se2 based minimodule: 16.6%2000In: Sixteenth European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, May 1-5, 2000Conference paper (Refereed)
  • 31.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chityuttakan, C
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Growth of Cu(In,Ga)Se2 films using a Cu-poor/rich/poor sequence: substrate temperature effects2003In: Thin Solid Films, Vol. 431-432, p. 1-5Article in journal (Refereed)
  • 32.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chityuttakan, Chanwit
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Mikrostrukturlaboratoriet.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Cu(In,Ga)Se2 thin films grown with a Cu-poor/rich/poor sequence: Growth model and structural considerations2003In: Progress in Photovoltaics: Research and Applications, Vol. 11, p. 319-331Article in journal (Refereed)
  • 33.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chityuttakan, Chanwit
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Growth of Cu(In,Ga)Se2 Films Using a Cu-poor/rich/poor Sequence: Substrate Temperature Effects2002In: Proc. E-MRS, June 2002, Strasbourg, France, 2002Conference paper (Refereed)
  • 34.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lundberg, Olle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Optimization of RF-sputtered ZnO/ZnO:Al for Cu(In,Ga)Se2 based devices2000In: Proc 16th EPVSEC, Glasgow, May, 2000, p. 775-778Conference paper (Refereed)
  • 35.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Analysis of CIGS Films and Devices Resulting from Different Cu-rich to Cu-poor Transitions2001In: Proc. 17th European Photovoltaic Solar Energy Conference, Munich, Oct, 2001Conference paper (Refereed)
  • 36.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Highly efficient Cu(In,Ga)Se2 mini-modules2003In: Solar energy Materials & Solar Cells, Vol. 75, p. 35-46Article in journal (Refereed)
  • 37.
    Kylner, Angela
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lindgren, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Impurities in chemical bath deposited CdS films for Cu(In,Ga)Se-2 solar cells and their stability1996In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 143, no 8, p. 2662-2669Article in journal (Refereed)
    Abstract [en]

    The highest efficiencies for Cu(In,Ga)Se-2-based thin dim solar cells have been achieved with CdS films prepared by a solution growth method known as the chemical bath deposition (CBD) technique. The impurity content in such cadmium sulfide films has bee

  • 38.
    Kylner, Angela
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rockett, Angus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Oxygen in Solution Grown Cds Films for Thin Film Solar Cells1996In: Solid State Phenomena, Vol. 51-52, p. 533-540Article in journal (Refereed)
  • 39.
    Lu, Jun
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets fysik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets elektronik.
    Olson, E
    The Influence of Na on the Microstructure of Cu(InxGa1-x)Se2 Based Solar Cell Thin Films2001In: 52nd annual meeting of the Scandinavian Society for Electron Microscopy, Stockholm 12-15 June 2001,Book of Abstracts : Abstract No P87, 2001, p. 184-185Conference paper (Refereed)
  • 40.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Malmström, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Influence of the Cu(In,Ga)Se2 Thickness and Ga Grading on Solar Cell Performance2003In: Progress in Photovoltaics: Science and Applications, Vol. 11, p. 77-88Article in journal (Refereed)
  • 41.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    High efficiency thin film solar cells with low In content due to thin Cu(In,Ga)Se2 and Ga grading2000In: Sixteenth European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, May 1-5, 2000Conference paper (Refereed)
  • 42.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rapid growth of thin Cu(In,Ga)Se2 layers for solar cells2003In: Thin Solid Films, Vol. 431-432, p. 26-30Article in journal (Refereed)
  • 43.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rapid Growth of Thin Cu(In,Ga)Se2 Layers for Solar Cells2002In: Proc. E-MRS, June 2002, Strasbourg, France, 2002Conference paper (Refereed)
  • 44.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edoff, Marika Edoff
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Optimized growth conditions for Cu(In,Ga)Se2 layers by co-evaporation at high deposition rates2003In: Material Research Conference, Spring 2003, San Francisco, USA, 2003Conference paper (Refereed)
  • 45.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The effect of Ga-grading in CIGS thin film solar cells2005In: Thin Solid Films, Vol. 480-481, p. 520-525Article in journal (Refereed)
  • 46.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets fysik.
    Rockett, Angus
    Edoff, M
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells2002In: Proceedings of the International Conference on Ternary and Multinary Compounds, Paris, France, October, 2002Conference paper (Refereed)
  • 47.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Analytisk materialfysik.
    Rockett, Angus
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells2003In: Journal of physics and chemistry of solids, Vol. 64, p. 1499-1504Article in journal (Refereed)
  • 48.
    Malm, Ulf
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The Stability in Damp Heat Conditions of Thin-film CIGS Solar Cells with Different Absorber Thickness2004In: 19th European Photovoltaic Energy Conference, 7-11 June, Paris, France, 2004, p. 1890-1893Conference paper (Other scientific)
  • 49.
    Malm, Ulf
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Long term stability in Cu(In,Ga)Se2 Solar cells with different buffer materials2005In: Conference proceedings: 20th EUPVSEC (European Photovoltaic Solar Energy Conference), Barcelona, Spain, June 2005, 2005Conference paper (Other scientific)
  • 50.
    Malmström, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Relation between composition and optical properties of CdS films grown by chemical bath deposition2004In: Proceedings 19th European Photovoltaic Solar Energy Conference (WIP-Münich, Münich, Vol II, 2004, p. 1909-1912Conference paper (Other scientific)
12 1 - 50 of 85
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf