uu.seUppsala University Publications
Change search
Refine search result
12 1 - 50 of 53
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Rows per page
  • 5
  • 10
  • 20
  • 50
  • 100
  • 250
Sort
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
  • Standard (Relevance)
  • Author A-Ö
  • Author Ö-A
  • Title A-Ö
  • Title Ö-A
  • Publication type A-Ö
  • Publication type Ö-A
  • Issued (Oldest first)
  • Issued (Newest first)
  • Created (Oldest first)
  • Created (Newest first)
  • Last updated (Oldest first)
  • Last updated (Newest first)
  • Disputation date (earliest first)
  • Disputation date (latest first)
Select
The maximal number of hits you can export is 250. When you want to export more records please use the Create feeds function.
  • 1.
    Aarik, J.
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. oorganisk kemi.
    Sundqvist, J.
    Aidla, A.
    Lu, J.
    Sajavaara, T.
    Kukli, K.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. oorganisk kemi.
    Hafnium tetraiodide and oxygen as precursors for atomic layer deposition of hafnium oxide thin films2002In: Thin Solid Films, Vol. 418, p. 69-72Article in journal (Refereed)
  • 2.
    Cheah, S.K
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. Inorganic Chemistry.
    Perre, Emilie
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. Inorganic Chemistry. strukturkemi.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. Inorganic Chemistry. oorganisk kemi.
    Simon, P
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. Inorganic Chemistry.
    Sabatier, Paul
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. Inorganic Chemistry.
    Edström, Kristina
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Structural Chemistry. Inorganic Chemistry. strukturkemi.
    Nanostructure Electrodes for 3D Li-ion Microbatteries2008In: Junior Euromat 2008 14-18 July, Lausanne (CH) oral presentation, 2008Conference paper (Other (popular scientific, debate etc.))
    Abstract [en]

    The vast development of surface micromachining technology has brought the proliferation of MEMS devices. However, the issue of powering the MEMS devices still remains as a great challenge. Although the conventional thin film 2D batteries seems promising for achieving high power density, however, relatively large area is required for having sufficient capacity. The drawbacks of 2D batteries can be overcome by using 3D architecture of Li-ion microbatteries.

    The 3D architecture of Li-ion microbatteries will have the advantages of short diffusion path as the electrode active materials are just tenth of nanometer deposited on the current collectors. The short diffusion path guarantees the high power performance. Besides that, the capacity of the microbatteries can be enhanced by just increasing the length of the electrode while keeping the areal footprint. This is what makes the 3D microbatteries a more promising power supply for MEMS.

    Our approach to synthesize a 3D Li-ion microbattery is starting with the synthesis of a nanostructure current collector using a template method. An anodized aluminium oxide (AAO) membrane is used as template for the electrodeposition of an aluminium current collector. AAO with defined pore sizes and inter-pores spacing are synthesized with a suitable diameter and interspacing where an aluminium current collector can grow within the template. The following step is the deposition of electrode active materials on the current collector. In this example Atomic Layer Deposition (ALD) is employed in order to achieve a well deposited layer of, in this case, a TiO2 cathode material. By controlling the deposition parameters, the crystal structure and the thickness of TiO2 layer can be altered to give a better electrochemical performance. Our results will be discussed in the light of the complexity of the deposition mechanisms of both the aluminium current collector nano-rods and the TiO2 layer.

  • 3. Cho, C.-R.
    et al.
    Park, S.-H.
    Moon, B.-M.
    Sundqvist, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Grishin, A
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Na0.5K0.5NbO3 thin films for MFIS_FET type Non-Volatile Memory Applications.2002In: Integrated Ferroelectrics, Vol. 49, p. 21-30Article in journal (Refereed)
  • 4. Dueñas, S.
    et al.
    Castán, H.
    Garcia, H.
    Bailón, L.
    Kukli, K.
    Ritala, M.
    Leskelä, M.
    Rooth, Mårten
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Wilhelmsson, Ola
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Experimental investigation of the electrical properties of atomic layer deposited hafnium-rich silicate films on n-type silicon2006In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 100, no 9, p. 094107-Article in journal (Refereed)
    Abstract [en]

    This work examines the structural and electrical properties of HfSixOy film based metal-insulator-semiconductor capacitors by means of x-ray diffraction, x-ray photoelectron spectroscopy, capacitance-voltage (C-V), deep level transient spectroscopy, and conductance transient (G-t) techniques. Hafnium-rich silicate films were atomic layer deposited onto HF-etched or SiO2 covered silicon. Although as-deposited samples exhibit high interfacial state and disorder-induced gap state densities, a postdeposition thermal annealing in vacuum under N2 flow for 1 min at temperatures between 600 and 730 °C clearly improves the interface quality. Marked crystallization and phase separation occurred at 800 °C, increasing the structural heterogeneity and defect density in the dielectric oxide layers.

  • 5. Dueñas, S
    et al.
    Castán, H
    García, H
    de Castro, A
    Bailón, L
    Kukli, K
    Aidla, A
    Aarik, J
    Mändar, H
    Uustare, T
    Lu, J
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Influence of single and double deposition temperatures on the interface quality of atomic layer deposited Al2O3 dielectric thin films on silicon2006In: Journal of Applied Physics, Vol. 99, p. 054902-Article in journal (Refereed)
    Abstract [en]

    An electrical characterization of Al2O3 based metal-insulator-semiconductor structures has been carried out by using capacitance-voltage, deep level transient spectroscopy, and conductance-transient (G-t) techniques. Dielectric films were atomic layer deposited (ALD) at temperatures ranging from 300 to 800 °C directly on silicon substrates and on an Al2O3 buffer layer that was grown in the same process by using 15 ALD cycles at 300 °C. As for single growth temperatures, 300 °C leads to the lowest density of states distributed away from the interface to the insulator [disorder-induced gap states (DIGS)], but to the highest interfacial state density (Dit). However, by using 300/500 °C double growth temperatures it is possible to maintain low DIGS values and to improve the interface quality in terms of Dit. The very first ALD cycles define the dielectric properties very near to the dielectric-semiconductor interface, and growing an upper layer at higher ALD temperature produces some annealing of interfacial states, thus improving the interface quality. Also, samples in which the only layer or the upper one was grown at the highest temperature (800 °C) show the poorest results both in terms of Dit and DIGS, so using very high temperatures yield defective dielectric films.

  • 6.
    Engelmark, Fredrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Iriarte, Gonzalo Fuentes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Hårsta, Anders
    Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. oorganisk kemi.
    Smith, Ulf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Synthesis of highly oriented piezoelectric AlN films by reactive sputter deposition2000In: J. Vac. Sci. Technol. A, Vol. 18, no 4, p. 1609-1612Article in journal (Refereed)
  • 7.
    Forsgren, K
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry.
    Hårsta, A
    Department of Materials Chemistry.
    In situ preparation of Ti-containing Ta2O5 films by halide CVD2000Conference paper (Refereed)
  • 8. Forsgren, K
    et al.
    Hårsta, A
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Kukli, K
    Aarik, J
    Aidla, A
    Chemical deposition routes to HfO2: real-time monitoring and film growth2001In: Fundamental Gas-Phase and Surface Chemistry of Vapor-Phase Deposition II, 2001, p. 152-Conference paper (Refereed)
  • 9. Forsgren, K
    et al.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    CVD of ZrO2 using ZrI4 as metal precursor1999In: Journal de Physique IV. E D P Science, Vol. 9, p. P8487-491Article in journal (Refereed)
    Abstract [en]

    A new process for CVD of zirconium oxide is presented. With zirconium tetraiodide, ZrI4, and oxygen as starting materials, crystalline ZrO2 is deposited on Si(100) at lower temperatures than with the conventional halide processes. The films are smooth an

  • 10. Forsgren, K
    et al.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Halide chemical vapour deposition of Ta2O51999In: Thin Solid Films, Vol. 344, p. 111-114Article in journal (Refereed)
    Abstract [en]

    Tantalum oxide, Ta2O5, has a wide range of interesting properties, for instance, a high dielectric constant, protonic conductivity, low leakage current and the material is possibly electrochromic. Tantalum oxide thin films have been prepared using many d

  • 11.
    Forsgren, K., Sundqvist, J., Hårsta, A., Kukli, K., Aarik, J. and Aidla, A.
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry.
    Sundqvist, J
    Hårsta, A
    Kukli, K
    Aarik, J
    Aidla, A
    Characterisation of Ta2O5 films prepared by ALCVD2000In: Chemical Vapor Deposition, Fifteenth Int. Conf., 2000, p. 645-Conference paper (Refereed)
  • 12.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Halide CVD of dielectric and ferroelectric oxides2001In: JOURNAL DE PHYSIQUE IV, ISSN 1155-4339, Vol. 11, no PR3, p. 223-230Article in journal (Refereed)
    Abstract [en]

    Thin films of dielectric and ferroelectric oxide films can be expected to play an increasingly important role in many future applications. Potential applications include areas such as the communication sector, radar, IR detectors, memories, integrated opt

  • 13.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Precursor selection in halide CVD of oxides1999In: Chemical Vapor Deposition. -Wiley-V C H Verlag GMBH, Vol. 5, p. 4191-Article in journal (Refereed)
    Abstract [en]

    The selection of source materials is a very important issue in CVD. The choice is determined by several parameters, including purity, vapor pressure, and thermal stability. A brief review is given of halide precursors for the CVD of oxides, especially fo

  • 14.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Thermodynamic modelling of CVD of high-T-c superconductors1997In: Journal of Tehemal Analysis. -John Wiley & Sons LTD, Vol. 48, p. 51093-1104Article in journal (Refereed)
    Abstract [en]

    Thermodynamic modelling of CVD of the superconducting phases in the Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O systems is reviewed. Both MOCVD and halide CVD are considered. The results are discussed in terms of calculated CVD stability diagrams. The influence of depos

  • 15.
    Hårsta, Anders
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Lu, J
    TEM investigation of halide CVD grown Bi2Sr2CaCu2O8+x films1997In: Journal of Alloys and Compounds - Elsevier Science SA Lausanne, Vol. 251, p. 1-2134Article in journal (Refereed)
    Abstract [en]

    The superconducting Bi2Sr2CaCu2O8-x (Bi-2212) phase has been deposited by halide CVD on two different substrate materials, MgO(001) and SrTiO3(001). Metal iodides and oxygen were used as precursors. The films grew with a strong [001] orientation and only

  • 16.
    Hårsta, Anders
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Lundquist, S
    In situ halide chemical vapor deposition of Bi2Sr2CaCu2O8+x on silver substrates1996In: Chemical Vapor Deposition. - VCH Publishers Inc, Vol. 2, p. 3109-112Article in journal (Other scientific)
    Abstract [en]

    The superconducting Bi2Sr2CaCu2O8+x phase is deposited on polycrystalline silver substrates by halide CVD in the temperature interval 760-820 degrees C. Metal iodides and oxygen are used as precursor materials. The films grow with a pronounced [001] orie

  • 17. Johansson, M
    et al.
    Yousif, M. Y. A
    Lundgren, P
    Bengtsson, S
    Sundqvist, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Radamson, H.H
    HfO2 gate dielectrics on strained-Si and strained-Si Ge layers.2003In: Semicond Sci. Technol., no 18, p. 820-826Article in journal (Refereed)
  • 18.
    Kukli, K
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry. Department of Materials Chemistry, Inorganic Chemistry.
    Aarik, J
    Aidla, A
    Forsgren, K
    Sundqvist, J
    Hårsta, Anders
    Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Uustare, T
    Mändar, H
    Kiisler, A. -A
    Atomic layer deposition of tantalum oxide thin films from iodide precursor2001In: Chem. Mater., Vol. 13, p. 122-Article in journal (Refereed)
  • 19.
    Kukli, K
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry. Department of Materials Chemistry, Inorganic Chemistry.
    Aidla, A
    Department of Materials Chemistry, Inorganic Chemistry.
    Aarik, J
    Department of Materials Chemistry, Inorganic Chemistry.
    Schuisky, M
    Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Ritala, M
    Department of Materials Chemistry, Inorganic Chemistry.
    Leskelä, M
    Department of Materials Chemistry, Inorganic Chemistry.
    Real time monitoring in atomic layer deposition of TiO2 from TiI4 and H2O-H2O22000In: Langmuir, Vol. 16, p. 8122-Article in journal (Refereed)
  • 20. Kukli, K
    et al.
    Forsgren, K
    Aarik, J
    Niskanen, A
    Ritala, M
    Leskelä, M
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide2001In: J. Crystal Growth, Vol. 231, p. 262-Article in journal (Refereed)
  • 21. Kukli, K
    et al.
    Forsgren, K
    Ritala, M
    Leskelä, M
    Aarik, J
    Hårsta, A
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursors2001In: J. Electrochem. Soc., Vol. 148, p. F227-Article in journal (Refereed)
  • 22.
    Kukli, K.
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry. Department of Materials Chemistry, Inorganic Chemistry.
    Ritala, M
    Department of Materials Chemistry, Inorganic Chemistry.
    Schuisky, M
    Department of Materials Chemistry, Inorganic Chemistry.
    Leskelä, M
    Department of Materials Chemistry, Inorganic Chemistry.
    Sajavaara, T
    Department of Materials Chemistry, Inorganic Chemistry.
    Keinonen, J
    Department of Materials Chemistry, Inorganic Chemistry.
    Uustarem, T
    Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Atomic layer deposition of titanium oxide from TiI4 and H2O22000In: Chem. Vap. Deposition, Vol. 6, p. 303-Article in journal (Refereed)
  • 23. Kukli, K.
    et al.
    Ritala, M.
    Uustare, T.
    Aarik, J.
    Forsgren, Katarina
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Sajavaara, T.
    Leskelä, M.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon2002In: Thin Solid Films, no 410, p. 53-60Article in journal (Refereed)
  • 24. Kukli, Kaupo
    et al.
    Aaltonen, Titta
    Aarik, Jaan
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Ritala, Mikko
    Ferrari, Sandro
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Leskelä, Markku
    Atomic Layer Deposition and Characterization of HfO2 Films on Noble Metal2005In: Journal of The Electrochemical Society, Vol. 152, no 7, p. F75-F82Article in journal (Refereed)
    Abstract [en]

    HfO2 films were grown by atomic layer deposition from HfCl4 and H2O on atomic layer deposited 40-70 nm thick platinum, iridium, and ruthenium films in the temperature range 200-600°C. The phase formed in the 30-50 nm thick HfO2 films was monoclinic HfO2 dominating over amorphous material without noticeable contribution from metastable crystallographic polymorphs. The metal-dielectric-metal capacitor structures formed after evaporating Al gate electrodes demonstrated effective permittivity values in the range 11-16 and breakdown fields reaching 5 MV/cm. Iridium electrode films showed the highest stability in terms of reliability and reproducibility of dielectric characteristics.

  • 25. Kukli, Kaupo
    et al.
    Aarik, Jaan
    Ritala, Mikko
    Uustare, Teet
    Sajavaara, Timo
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Sundqvist, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Aidla, Aleks
    Pung, Lembit
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Leskelä, Markku
    Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films2004In: Journal of Applied Physics, Vol. 96, no 9, p. 5298-5307Article in journal (Refereed)
    Abstract [en]

    Hf02 films were atomic layer deposited from HfCl4 and H20 on

    Si(lOO) in the temperature range of 226-750 °C. The films consisted of dominantly the monoclinic polymorph. Elastic recoil

    detection analysis revealed high residual chlorine and hydrogen contents (2-5 at. %) in the films grown below 300-350 °C. The content of residual hydrogen and chlorine monotonouslydecreased with increasing growth temperature. The effctive permittivity insignificantly depended on the

    growth temperature and water partial pressure. Capacitance-voltage curves exhibited market hysteresis especially in the films grown at 400-450 ° C, and demonstrated enhanced distortions likely due to the increased trap densities in the films grown at 700-750 °C. Changes in water pressure led to some changes in the extent of crystallization, but did not induce any clear change; in the capacitance of the dielectric layer.

  • 26. Kukli, Kaupo
    et al.
    Aarik, Jaan
    Uustare, Teet
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Ritala, Mikko
    Aidla, Aleks
    Oung, Lembit
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Leskelä, Markku
    Kikas, Arvo
    Sammelselg, Väino
    Engineering structure and properties of hafnium oxide films by atomic layer deposition temperature2005In: Thin Solid Films, Vol. 479, no 1-2, p. 1-11Article in journal (Refereed)
    Abstract [en]

    HfO2 films were atomic layer deposited from HfCl4 and H2O on Si(100) in the temperature range of 300–600 °C. At low temperatures, films grow faster and are structurally more disordered, compared to films grown at high temperatures. At high temperatures, the films are better crystallized, but grow slower and contain grain boundaries extending from substrate to gate electrode. Film growth rate and capacitance of HfO2 dielectric layers was improved by depositing stacked structures with polycrystalline films of higher purity at 600 °C on thin HfO2 sublayer grown on Si at 300 °C.

  • 27. Kukli, Kaupo
    et al.
    Ritala, Mikko
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Leskelä, Markku
    Properties of Hf02 Thin Films Grown by ALD from Hafnium tetrakis(ethylmethylamide) and Water2004In: Journal of The Electrochemical Society, Vol. 151, no 8, p. F189-F193Article in journal (Refereed)
    Abstract [en]

    Hf02 films were grown by atomic layer deposition (ALD) from

    Hf[N(CH3)(C2H5)]4 and H2O on Si(lOO) substrates. The Thickness of 5-45 nm thick films on HF-etched SI was proportinal to the number of growth cycles. Crystallization was observed

    in the 30-45 nm thick films, containing the monoclinic Hf02 polymorph. Films with thicknesses lower than 10 nm were

    amorphous. The effective permittivity of the dielectric films varied between 6.5 and 17. The leakage and capacitive characteristics did not show any clear dependence on the HfO2 growth temperature.

  • 28. Kukli, Kaupo
    et al.
    Ritala, Mikko
    Sundqvist, Jonas
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Aarik, Jaan
    Lu, Jun
    Sajavaara, Timo
    Leskelä, Markku
    Hårsta, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen2002In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 92, no 10, p. 5698-5703Article in journal (Refereed)
  • 29.
    Lu, J
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Sundqvist, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Ottosson, M
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Tarre, A
    Rosental, A
    Aarik, J
    Hårsta, A
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Microstructure characterisation of ALD-grown epitaxial SnO2 thin films2004In: Journal of Crystal Growth, no 260, p. 191-200Article in journal (Refereed)
  • 30.
    Lu, Jun
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences.
    Aarik, Jaan
    Sundqvist, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry.
    Kukli, Kaupo
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry.
    Carlsson, Jan-Otto
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry.
    Analytical TEM characterization of the interfacial layer between ALD Hf02 film and silicon substrate2005In: Journal of Crystal Growth, no 273, p. 510-514Article in journal (Refereed)
    Abstract [en]

    High-resolution transmission electron microscopy and electron energy loss spectrometry were used to characterize

    the interfacial layer formed between the silicon substrate and the HfO2 thin film grown by atomic layer deposition (ALD) from HfIU4 and O2. The interfacial layer was amorphous and contained SiO2 mixed with a small amount of elemental Si on the atomic level. The interfacial silicon oxide layer was mainly deposited at the beginning of the ALD process since its thickness was insensitive to the number of applied ALD cycles when increased from 50 to 1000.

  • 31. Mårtensson, P
    et al.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    HALIDE CHEMICAL-VAPOR-DEPOSITION OF BI2SR2CACU2O8+X - ASPECTS OF EPITAXY1995In: Journal of Crystal Growth. - Elsevier Science BV, Vol. 156, p. 1-267Article in journal (Other scientific)
    Abstract [en]

    The superconducting Bi2Sr2CaCu2O8+x phase has been deposited bg halide chemical vapour deposition (CVD) on three different substrate materials, MgO(001), SrTiO3(001) and LaAlO3(001). Metal iodides and oxygen were used as precursors. The films were found

  • 32.
    Rooth, Mårten
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Johansson, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Ordered and Parallel Niobium Oxide Nano-Tubes Fabricated using Atomic Layer Deposition in Anodic Alumina Templates2006In: Materials Research Society, Vol. 901, p. 0901-Ra24Article in journal (Refereed)
    Abstract [en]

    Amorphous niobium oxide (Nb2O5) nano-tubes were fabricated inside anodic alumina templates using atomic layer deposition (ALD). The nanoporous templates were in-house fabricated anodic alumina membranes having an inter-pore distance of about 100 nm with pores lengths of 2 µm. The pores were parallel and well ordered in a hexagonal pattern. Atomic layer deposition was performed using gas pulses of niobium iodide (NbI5) and oxygen separated by purging pulses of argon. By employing long gas pulses (30 s) it was possible to get coherent and amorphous Nb2O5 films conformally covering the pore-walls of the alumina template. The outer diameter of the nano-tubes was tailored between 40 and 80 nm by using alumina templates with different pore sizes. By using template membranes with pores not opened in the bottom, nano-tubes with one side closed could be fabricated. Free-standing, and still parallel, nano-tubes could be obtained by selectively etching away the alumina template using phosphoric acid. Using the above mentioned procedure it was possible to fabricate unsurpassed parallel niobium oxide nano-tubes of equal length, diameter and wall-thickness, ordered in a perfect hexagonal pattern. The samples were analysed using high resolution scanning electron microscopy (HR-SEM), transmission electron microscopy (TEM), electron diffraction and x-ray fluorescence spectroscopy (XRFS).

  • 33.
    Rooth, Mårten
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Lindahl, Erik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Atomic Layer Deposition of Co3O4 Thin Films Using a CoI2/O2 Precursor Combination2006In: Chemical Vapor Deposition, Vol. 12, no 4, p. 209-213Article in journal (Refereed)
    Abstract [en]

    Thin films of Co3O4 have been successfully deposited on SiO2/Si(100) and MgO(001) substrates by atomic layer deposition (ALD) using the precursor combination CoI2/O2. The deposition temperature was found to have a strong influence on the growth rate. On SiO2/Si(100) substrates, growth rates of about 0.2 nm per cycle were recorded at 500 °C, decreasing to 0.004 nm per cycle at 700 °C. On MgO(001) substrates the growth rates were lower, reaching about 0.12 nm per cycle at 475 °C, while no growth could be detected at 700 °C. The films were found to grow as the cubic Co3O4 phase throughout the temperature range 475-700 °C, polycrystalline on SiO2/Si(100), and epitaxial on MgO(001). On MgO(001) the epitaxial relationship was established to the in-plane orientation (001)[100]Co3O4||(001)[100]MgO. No iodine could be detected by Rutherford backscattering spectroscopy (RBS) or by X-ray fluorescence (XRF) spectroscopy in any of the deposited films.

  • 34. Rosental, Arnold
    et al.
    Tarre, Aivar
    Gerts, Alar
    Sundqvist, Jonas
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
    Hårsta, Anders
    Aidla, Alex
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry.
    Aarik, Jaan
    Sammelselg, Veino
    Uustare, Teet
    Gas sensing properties of epitaxial SnO2 thin films prepared by atomic layer deposition2003In: Sensors and actuators. B, Chemical, ISSN 0925-4005, E-ISSN 1873-3077, Vol. 93, no 1-3, p. 552-555Article in journal (Refereed)
    Abstract [en]

    Undoped SnO2 thin films are grown on α-Al2O3(0 1 2) (r-cut sapphire) substrates by gas phase atomic layer deposition (ALD). Two precursor pairs, SnI4–O2 and SnCl4–H2O2, both new for ALD, are used. The films have a cassiterite structure and are (1 0 1)[0 1 0]cassiterite||(0 1 2)[1 0 0]sapphire oriented. A good epitaxial quality and the conductivity acceptable from the standpoint of semiconductor gas sensors are achieved for ultrathin films grown from SnI4–O2 at 600 °C. The sensitivity of these films to CO in air has a maximum at a thickness of about 10 nm. Response rise and decay times belonging to a several seconds interval are measured. The films are assumed to function as a single grain.

  • 35. Schuisky, M
    et al.
    Aarik, J
    Kukli, K
    Aidla, A
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Atomic layer deposition of thin films using O2 as oxygen source2001In: Langmuir, Vol. 17, p. 5508-Article in journal (Refereed)
  • 36.
    Schuisky, M
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry.
    Hårsta, A
    Department of Materials Chemistry.
    Khartsev, S
    Grishin, A
    Bismuth titanate thin films grown by halide CVD2000In: Chemical Vapor Deposition, Fifteenth Int. Conf., 2000, p. 748-Conference paper (Refereed)
  • 37. Schuisky, M
    et al.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Chemical vapor deposition stability diagram for the Bil(3)-O-2 system1998In: Journal of Electrochemical Society, Vol. 145, p. 4234-4239Article in journal (Refereed)
    Abstract [en]

    Several phases in the Bi-O system have been deposited by chemical vapor deposition on MgO(001) substrates. Bismuth iodide, BiI3, and oxygen were used as source materials. An experimental chemical vapor deposition stability diagram has been determined as

  • 38. Schuisky, M
    et al.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Epitaxial growth of Bi2O2.33 by halide CVD1996In: Chemical Vapor Deposition. - VCH Publishers Inc, Vol. 2, p. 6235-Article in journal (Other scientific)
    Abstract [en]

    Bismuth oxide is an interesting dielectric material with potential applications for optical coatings, MIS capacitors, and microwave integrated circuits. CVD growth has a number of advantages over other deposition techniques, e.g., precise control of oxyg

  • 39. Schuisky, M
    et al.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Epitaxial growth of TiO2 (rutile) thin films by halide CVD1999In: Journal de Physique IV. France, Vol. 9, p. Pr8-381Article in journal (Refereed)
    Abstract [en]

    Thin films of TiO2 have been deposited on alpha-Al2O3 (0 1 2) substrates from TiI4 and O-2 using low pressure chemical vapour deposition. The TiO2 films were iodine-free and both the anatase and the rutile phase TiO2 could be deposited. The rutile phase

  • 40. Schuisky, M
    et al.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Halide chemical vapor deposition of Bi4Ti3O121998In: Chemical Vapor Deposition, Vol. 4, p. 213-216Article in journal (Refereed)
    Abstract [en]

    Bismuth titanate is an interesting ferroelectric material whose properties suggest applications in FETs and in displays. CVD has several advantages in preparing such materials, but a major issue is the selection of precursors. Commonly organometallics ar

  • 41.
    Schuisky, M
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry. Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Aidla, A
    Department of Materials Chemistry, Inorganic Chemistry.
    Kukli, K
    Department of Materials Chemistry, Inorganic Chemistry.
    Kiisler, A.A
    Department of Materials Chemistry, Inorganic Chemistry.
    Aarik, J
    Department of Materials Chemistry, Inorganic Chemistry.
    Atomic layer chemical vapor deposition of TiO2: Low-temperature epitaxy of rutile and anatase2000In: J. Electrochem. Soc., Vol. 147, p. 3319-Article in journal (Refereed)
  • 42.
    Schuisky, M
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry. Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Khartsev, S
    Department of Materials Chemistry, Inorganic Chemistry.
    Grishin, A
    Department of Materials Chemistry, Inorganic Chemistry.
    Ferroelectric Bi4Ti3O12 thin films on Pt-coated silicon by halide chemical vapor deposition2000In: J. Appl. Phys., Vol. 88, p. 2819-Article in journal (Refereed)
  • 43. Schuisky, M
    et al.
    Kukli, K
    Aarik, J
    Lu, J
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process.2002In: J. Cryst. Growth, no 235, p. 293-299Article in journal (Refereed)
  • 44.
    Schuisky, M
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry.
    Kukli, K
    Aidla, A
    Aarik, J
    Ludvigsson, M
    Hårsta, A
    Department of Materials Chemistry.
    Ultra thin TiO2 films deposited by atomic layer chemical vapor deposition2000In: Chemical Vapor Deposition, Fifteenth Int. Conf., 2000, p. 637-Conference paper (Refereed)
  • 45.
    Schuisky, M
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Chemistry. Department of Materials Chemistry, Inorganic Chemistry.
    Kukli, K
    Department of Materials Chemistry, Inorganic Chemistry.
    Ritala, M
    Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Leskelä, M
    Department of Materials Chemistry, Inorganic Chemistry.
    Atomic layer chemical vapour deposition in the Bi-Ti-O system2000In: Chem. Vap. Deposition, Vol. 6, p. 139-Article in journal (Refereed)
  • 46.
    Strömme, Maria Mattsson
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science.
    Niklasson, Gunnar A
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science.
    Forsgren, K
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Hårsta, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    A frequency response and transient current study of beta-Ta2O5: Methods of estimating the dielectric constant, direct current conductivity, and ion mobility1999In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 85, article id 2185Article in journal (Refereed)
    Abstract [en]

    Dielectric ac measurements in the frequency range of ∼1 mHz–1 MHz were performed on β-Ta2O5 samples made by chemical vapor deposition. A method of estimating the dielectric constant and the dc conductivity from the dielectric response was developed. The high-frequency dielectric constant was found to be 25.84 with no detectable temperature dependence and the dc conductivity due to protons had an activation energy of about 0.4 eV in the studied temperature range (from 24 to 90 °C). Evidence for the conduction mechanism being protonic rather then electronic was found from isothermal transient ionic current (ITIC) measurements. The ITIC recordings could also determine conduction parameters, such as protonmobility, number of charge carriers, and dc conductivity.

  • 47.
    Sundqvist, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Aarik, J
    Kukli, K
    Aidla, A
    Atomic Layer Deposition of Polycrystalline HfO2 Films by the HfI4-O2 Precursor Combination.2003In: Thin Solid Films, no 427, p. 147-151Article in journal (Refereed)
  • 48. Sundqvist, Jonas
    et al.
    Lu, Jun
    Ottosson, Mikael
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Growth of SnO2 thin films by atomic layer deposition and chemical vapour deposition: A comparative study2006In: Thin Solids Films, Vol. 514, no 1-2, p. 63-68Article in journal (Refereed)
    Abstract [en]

    Thin films of the tetragonal rutile-type SnO2 phase have been deposited by both atomic layer deposition (ALD) and chemical vapour deposition (CVD) using the SnI4–O2 precursor combination. Depositions were carried out in the temperature region of 350–750 °C on α-Al2O3(0 1 2) substrates. In both cases the films were found to grow epitaxially with the in-plane orientation relationships [0 1 0]SnO2 || [1 0 0]α-Al2O3 and [1 0 1¯]SnO2 || [1¯ 2¯ 1]α-Al2O3. Films grown by ALD were found to be close to perfectly single crystalline, contained a low density of defects and were almost atomically smooth. The CVD films were found to have a much rougher film morphology, and exhibited both grain boundaries and twin formation.

  • 49.
    Sundqvist, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Ottosson, Mikael
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    CVD of Epitaxal SnO2 Films by SnL4/O2 Precursor Combination2004In: Chem. Vap. Deposition, Vol. 10, no 2, p. 77-82Article in journal (Refereed)
  • 50.
    Sundqvist, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Schuisky, M
    Hårsta, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    ALD of some metal oxides using the precursor combination iodide and oxygen.2002In: Proc. 4th Int. Conf. Materials for Microelectron. Nanoeng., 2002, p. 65-68Conference paper (Refereed)
12 1 - 50 of 53
CiteExportLink to result list
Permanent link
Cite
Citation style
  • apa
  • ieee
  • modern-language-association
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf