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  • 1.
    Achenbach, Jan-Ole
    et al.
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Mraz, Stanislav
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Schneider, Jochen M.
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Correlative Experimental and Theoretical Investigation of the Angle-Resolved Composition Evolution of Thin Films Sputtered from a Compound Mo2BC Targe2019Ingår i: Coatings, ISSN 2079-6412, Vol. 9, nr 3, artikel-id 206Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The angle-resolved composition evolution of Mo-B-C thin films deposited from a Mo2BC compound target was investigated experimentally and theoretically. Depositions were carried out by direct current magnetron sputtering (DCMS) in a pressure range from 0.09 to 0.98 Pa in Ar and Kr. The substrates were placed at specific angles α with respect to the target normal from 0 to ±67.5°. A model based on TRIDYN and SIMTRA was used to calculate the influence of the sputtering gas on the angular distribution function of the sputtered species at the target, their transport through the gas phase, and film composition. Experimental pressure- and sputtering gas-dependent thin film chemical composition data are in good agreement with simulated angle-resolved film composition data. In Ar, the pressure-induced film composition variations at a particular α are within the error of the EDX measurements. On the contrary, an order of magnitude increase in Kr pressure results in an increase of the Mo concentration measured at α = 0° from 36 at.% to 43 at.%. It is shown that the mass ratio between sputtering gas and sputtered species defines the scattering angle within the collision cascades in the target, as well as for the collisions in the gas phase, which in turn defines the angle- and pressure-dependent film compositions.

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  • 2.
    Achenbach, Jan-Ole
    et al.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany.
    Sahu, Rajib
    Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany.
    Voelker, Bernhard
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany;Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany.
    Hans, Marcus
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi.
    Miljanovic, Danilo J.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany.
    Scheu, Christina
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany;Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany.
    Schneider, Jochen M.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany;Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany.
    Synthesis and Properties of Orthorhombic MoAlB Coatings2019Ingår i: Coatings, ISSN 2079-6412, Vol. 9, nr 8, artikel-id 510Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    MoAlB is a potential candidate for high-temperature application since a dense, adherent alumina scale is formed. While, based on X-ray diffraction investigations, the formation of phase pure orthorhombic MoAlB coatings is observed, energy dispersive X-ray spectroscopy carried out in a scanning transmission electron microscope reveals the presence of Al-rich and O-rich regions within the MoAlB matrix. The oxidation kinetics of coatings and bulk is similar to the scale thickness formed on the MoAlB coating after oxidation at 1200 degrees C for 30 min is similar to the one extrapolated for bulk MoAlB. Furthermore, the oxidation kinetics of MoAlB coatings is significantly lower than the one reported for bulk Ti2AlC. Finally, the elastic properties measured for the as-deposited coatings are consistent ab initio predictions.

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  • 3.
    Akansel, Serkan
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Kumar, Ankit
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Venugopal, Vijayaharan A.
    Seagate Technol, Londonderry BT48 0BF, North Ireland.
    Esteban-Puyuelo, Raquel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialteori.
    Banerjee, Rudra
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialteori.
    Autieri, Carmine
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialteori.
    Brucas, Rimantas
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Behera, Nilamani
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Sortica, Mauricio A.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Basu, Swaraj
    Seagate Technol, Londonderry BT48 0BF, North Ireland.
    Gubbins, Mark A.
    Seagate Technol, Londonderry BT48 0BF, North Ireland.
    Sanyal, Biplab
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialteori.
    Svedlindh, Peter
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Enhanced Gilbert damping in Re-doped FeCo films: Combined experimental and theoretical study2019Ingår i: Physical Review B, ISSN 2469-9950, E-ISSN 2469-9969, Vol. 99, nr 17, artikel-id 174408Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The effects of rhenium doping in the range 0-10 at.% on the static and dynamic magnetic properties of Fe65Co35 thin films have been studied experimentally as well as with first-principles electronic structure calculations focusing on the change of the saturation magnetization (M-s) and the Gilbert damping parameter (alpha). Both experimental and theoretical results show that M-s decreases with increasing Re-doping level, while at the same time alpha increases. The experimental low temperature saturation magnetic induction exhibits a 29% decrease, from 2.31 to 1.64 T, in the investigated doping concentration range, which is more than predicted by the theoretical calculations. The room temperature value of the damping parameter obtained from ferromagnetic resonance measurements, correcting for extrinsic contributions to the damping, is for the undoped sample 2.1 x 10(-3), which is close to the theoretically calculated Gilbert damping parameter. With 10 at.% Re doping, the damping parameter increases to 7.8 x 10(-3), which is in good agreement with the theoretical value of 7.3 x 10(-3). The increase in damping parameter with Re doping is explained by the increase in the density of states at the Fermi level, mostly contributed by the spin-up channel of Re. Moreover, both experimental and theoretical values for the damping parameter weakly decrease with decreasing temperature.

  • 4.
    Arvizu, Miguel A
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Qu, Hui-Ying
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik. Harbin Inst Technol, Sch Chem & Chem Engn, MIIT Key Lab Crit Mat Technol New Energy Convers, Harbin 150001, Heilongjiang, Peoples R China.
    Cindemir, Umut
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Qiu, Zhen
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Rojas González, Edgar Alonso
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Granqvist, Claes Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Österlund, Lars
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Niklasson, Gunnar
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Electrochromic WO3 thin films attain unprecedented durability by potentiostatic pretreatment2019Ingår i: Journal of Materials Chemistry A, ISSN 2050-7488, Vol. 7, nr 6, s. 2908-2918Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Electrochromic windows and glass facades are able to impart energy efficiency jointly with indoor comfort and convenience. Long-term durability is essential for practical implementation of this technology and has recently attracted broad interest. Here we show that a simple potentiostatic pretreatment of sputterdeposited thin films of amorphous WO3-the most widely studied electrochromic material-can yield unprecedented durability for charge exchange and optical modulation under harsh electrochemical cycling in a Li-ion-conducting electrolyte and effectively evades harmful trapping of Li. The pretreatment consisted of applying a voltage of 6.0 V vs. Li/Li+ for several hours to a film backed by a transparent conducting In2O3: Sn layer. Associated compositional and structural modifications were probed by several techniques, and improved durability was associated with elemental intermixing at the WO3/ITO and ITO/glass boundaries as well as with carbonaceous solid-electrolyte interfacial layers on the WO3 films. Our work provides important new insights into long-term durability of ion-exchange-based devices.

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  • 5.
    Arvizu, Miguel
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Wen, Rui-Tao
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Klemberg-Sapieha, Jolanta Ewa
    Martinu, Ludvik
    Niklasson, Gunnar A.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Granqvist, Claes-Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik.
    Galvanostatic ion de-trapping rejuvenates oxide thin films2015Ingår i: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 7, nr 48, s. 26387-26390Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ion trapping under charge insertion-extraction is well-known to degrade the electrochemical performance of oxides. Galvano-static treatment was recently shown capable to rejuvenate the oxide, but the detailed mechanism remained uncertain. Here we report on amorphous electrochromic (EC) WO3 thin films prepared by sputtering and electrochemically cycled in a lithium-containing electrolyte under conditions leading to severe loss of charge exchange capacity and optical modulation span. Time-of-flight elastic recoil detection analysis (ToF-ERDA) documented pronounced Li+ trapping associated with the degradation of the EC properties and, importantly, that Li+ detrapping, caused by a weak constant current drawn through the film for some time, could recover the original EC performance. Thus, ToF-ERDA provided direct and unambiguous evidence for Li+ detrapping.

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  • 6.
    Baben, Moritz to
    et al.
    Rhein Westfal TH Aachen, Mat Chem, D-52074 Aachen, Germany.;GTT Technol, Herzogenrath, Germany..
    Hans, Marcus
    Rhein Westfal TH Aachen, Mat Chem, D-52074 Aachen, Germany..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Evertz, Simon
    Rhein Westfal TH Aachen, Mat Chem, D-52074 Aachen, Germany..
    Ruess, Holger
    Rhein Westfal TH Aachen, Mat Chem, D-52074 Aachen, Germany..
    Schneider, Jochen M.
    Rhein Westfal TH Aachen, Mat Chem, D-52074 Aachen, Germany..
    Unprecedented thermal stability of inherently metastable titanium aluminum nitride by point defect engineering2017Ingår i: MATERIALS RESEARCH LETTERS, ISSN 2166-3831, Vol. 5, nr 3, s. 158-169Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Extreme cooling rates during physical vapor deposition (PVD) allow growth of metastable phases. However, we propose that reactive PVD processes can be described by a gas-solid paraequilibrium defining chemical composition and thus point defect concentration. Weshow that this notion allows for point defect engineering by controlling deposition conditions. As example we demonstrate that thermal stability of metastable (Ti, Al) Nx, the industrial benchmark coating for wear protection, can be increased from 800 degrees C to unprecedented 1200 degrees C by minimizing the vacancy concentration. The thermodynamic approach formulated here opens a pathway for thermal stability engineering by point defects in reactively deposited thin films.

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  • 7. Balitskii, Olexiy A.
    et al.
    Sytnyk, Mykhailo
    Stangl, Julian
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Groiss, Heiko
    Heiss, Wolfgang
    Tuning the Localized Surface Plasmon Resonance in Cu2-xSe Nanocrystals by Postsynthetic Ligand Exchange2014Ingår i: ACS Applied Materials and Interfaces, ISSN 1944-8244, E-ISSN 1944-8252, Vol. 6, nr 20, s. 17770-17775Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Nanoparticles exhibiting localized surface plasmon resonances (LSPR) are valuable tools traditionally used in a wide field of applications including sensing, imaging, biodiagnostics and medical therapy. Plasmonics in semiconductor nanocrystals is of special interest because of the tunability of the carrier densities in semiconductors, and the possibility to couple the plasmonic resonances to quantum confined excitonic transitions. Here, colloidal Cu2-xSe nanocrystals were synthesized, whose composition was shown by Rutherford backscattering analysis and electron dispersive X-ray spectroscopy, to exhibit Cu deficiency. The latter results in p-type doping causing LSPRs, in the present case around a wavelength of 1100 nm, closely matching the indirect band gap of Cu2-xSe. By partial exchange of the organic ligands to specific electron trapping or donating species the LSPR is fine-tuned to exhibit blue or red shifts, in total up to 200 nm. This tuning not only provides a convenient tool for post synthetic adjustments of LSPRs to specific target wavelength but the sensitive dependence of the resonance wavelength on surface charges makes these nanocrystals also interesting for sensing applications, to detect analytes dressed by functional groups.

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  • 8. Bonanomi, N.
    et al.
    Andersson Sundén, Erik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Binda, Federico
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Cecconello, Marco
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Conroy, Sean
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ericsson, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Eriksson, Jacob
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hellesen, Carl
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hjalmarsson, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Possnert, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sahlberg, Arne
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sjöstrand, Henrik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Skiba, Mateusz
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Weiszflog, Matthias
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Zychor, I
    Role of fast ion pressure in the isotope effect in JET L-mode plasmas2019Ingår i: Nuclear Fusion, ISSN 0029-5515, E-ISSN 1741-4326, Vol. 59, nr 9, artikel-id 096030Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    This paper presents results of JET ITER-like wall L-mode experiments in hydrogen and deuterium (D) plasmas, dedicated to the study of the isotope dependence of ion heat transport by determination of the ion critical gradient and stiffness by varying the ion cyclotron resonance heating power deposition. When no strong role of fast ions in the plasma core is expected, the main difference between the two isotope plasmas is determined by the plasma edge and the core behavior is consistent with a gyro-Bohm scaling. When the heating power (and the fast ion pressure) is increased, in addition to the difference in the edge region, also the plasma core shows substantial changes. The stabilization of ion heat transport by fast ions, clearly visible in D plasmas, appears to be weaker in H plasmas, resulting in a higher ion heat flux in H with apparent anti-gyro-Bohm mass scaling. The difference is found to be caused by the different fast ion pressure between H and D plasmas, related to the heating power settings and to the different fast ion slowing down time, and is completely accounted for in non-linear gyrokinetic simulations. The application of the TGLF quasi-linear model to this set of data is also discussed.

  • 9.
    Bruckner, Barbara
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Johannes-Kepler University Linz, IEP-AOP, Austria.
    Nyberg, Tomas
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets fysik. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Greczynski, Grzegorz
    Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden.
    Bauer, Peter
    Johannes-Kepler University Linz, IEP-AOP, Austria.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Electronic interaction of light, keV ions in transition metal nitridesIngår i: Artikel i tidskrift (Refereegranskat)
  • 10.
    Bruckner, Barbara
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. ohannes Kepler Univ Linz, Atom Phys & Surface, A-4040 Linz, Austria..
    Sortica, Mauricio A.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Bauer, Peter
    ohannes Kepler Univ Linz, Atom Phys & Surface, A-4040 Linz, Austria..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    On the influence of uncertainties in scattering potentials on quantitative analysis using keV ionsIngår i: Artikel i tidskrift (Refereegranskat)
  • 11.
    Bruckner, Barbara
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Johannes Kepler Univ Linz, Atom Phys & Surface, A-4040 Linz, Austria.
    Bauer, Peter
    Johannes Kepler Univ Linz, Atom Phys & Surface, A-4040 Linz, Austria.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Neutralization of slow helium ions scattered from single crystalline aluminum and tantalum surfaces and their oxides2020Ingår i: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 691, artikel-id 121491Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We investigated the impact of surface oxygen on the ion yield for He+ ions scattered from different single crystalline surfaces in low-energy ion scattering. Initially clean Al(111) and Ta(111) were exposed to molecular oxygen and ion spectra for different oxidation stages and different primary energies were recorded. A comparison of ion yields normalized to the differential scattering cross section as well as experimental factors allows obtaining information about the influence of oxygen on charge exchange processes. The decrease in the ion yield of both metals with exposure cannot be explained by different surface coverages exclusively, but requires the neutralization efficiency to be dependent on the chemical structure of the surface. For Ta, additionally, a different energy dependency of the ion yield obtained in the metal and oxide occurs. The ion yield for O shows in both surfaces a significantly weaker energy dependency than the investigated metals.

    Publikationen är tillgänglig i fulltext från 2021-09-06 00:00
  • 12.
    Bruckner, Barbara
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria.
    Bauer, Peter
    Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    The impact of surface oxidation on energy spectra of keV ions scattered from transition metals2019Ingår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 479, s. 1287-1292Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Studying the initial stages of surface oxidation is of great relevance to understand how oxygen alters the physical and chemical properties at the interface of the host material to the environment and is therefore, crucial for improvement in manifold technological applications. We investigated the influence of surface oxygen on ion spectra recorded for keV noble gas ions backscattered from metal surfaces in low energy ion scattering (LEIS). Initially pure Zn and Ta surfaces, chosen for their well-characterized properties in ion-neutralization in LEIS, have been oxidized and ion spectra for pure and oxidized surfaces have been compared. Oxygen on the surface significantly influences shape and intensity of the backscattered ion spectrum at all energies: for both metal systems, the surface scattered ion yield of the metal is drastically decreasing under oxygen presence. The observed decrease, however, cannot be explained by the reduction in the surface areal density of the metal constituents exclusively. At least for Zn an additional significant change in charge exchange behavior is necessary to explain the observations. In contrast to the generally observed decrease in the yield of ions scattered from the outermost surface, the change in shape and intensity of the reionization background are found to show opposing trends and different energy dependencies for Zn and Ta.

  • 13.
    Bruckner, Barbara
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria.
    Roth, D.
    Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria.
    Goebl, D.
    Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria.
    Bauer, P.
    Johannes Kepler Univ Linz, IEP AOP, Altenbergerstr 69, A-4040 Linz, Austria.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    A note on extracting electronic stopping from energy spectra of backscattered slow ions applying Bragg's rule2018Ingår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 423, s. 82-86Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Electronic stopping measurements in chemically reactive targets, e.g., transition and rare earth metals are challenging. These metals often contain low Z impurities, which contribute to electronic stopping. In this article, we present two ways how one can correct for the presence of impurities in the evaluation of proton and He stopping in Ni for primary energies between 1 and 100 keV, either considering or ignoring the contribution of the low Z impurities to multiple scattering. We find, that for protons either method leads to concordant results, but for heavier projectiles, e.g. He ions, the influence on multiple scattering must not be neglected.

  • 14.
    Bruckner, Barbara
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Johannes Kepler Univ Linz, Atom Phys & Surface, A-4040 Linz, Austria..
    Wolf, Philipp M.
    Bauer, Peter
    Johannes Kepler Univ Linz, Atom Phys & Surface, A-4040 Linz, Austria..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Impact of the experimental approach on the observed electronic energy loss for keV ions in self-supporting, thin filmsManuskript (preprint) (Övrigt vetenskapligt)
  • 15. Cannas, Barbara
    et al.
    Andersson Sundén, Erik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Binda, F.
    Cecconello, Marco
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Conroy, Sean
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ericsson, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Eriksson, Jacob
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hellesen, C.
    Hjalmarsson, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Possnert, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sahlberg, Arne
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sjöstrand, Henrik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Skiba, M.
    Weiszflog, Matthias
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Zychor, I
    Recurrence Plots for Dynamic Analysis of Type-I ELMs at JET With a Carbon Wall2019Ingår i: IEEE Transactions on Plasma Science, ISSN 0093-3813, E-ISSN 1939-9375, Vol. 47, nr 4, s. 1871-1877Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In this paper, the dynamic characteristics of type-I edge-localized modes (ELM) time series from the JET tokamak, the world's largest magnetic confinement plasma physics experiment, have been investigated through recurrence plots (RPs). The analysis has been focused on RPs of pedestal temperature, line averaged electron density, and outer divertor D-alpha time series during experiments with a carbon wall. The analysis of RPS shows the patterns similar to those characteristics of signals exhibiting type-2 intermittency, in particular, a characteristic kite-like shape; this gives useful hints to model the temperature signal as well as the D-alpha radiation time series, with simple nonlinear maps capturing the nearly periodic behavior of type-I ELMs.

  • 16. Carvalho, D. D.
    et al.
    Andersson Sundén, Erik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Binda, Federico
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Cecconello, Marco
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Conroy, Sean
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ericsson, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Eriksson, Jacob
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hellesen, Carl
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hjalmarsson, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Possnert, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sahlberg, Arne
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sjöstrand, Henrik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Skiba, Mateusz
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Weiszflog, Matthias
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Zychor, I
    Deep neural networks for plasma tomography with applications to JET and COMPASS2019Ingår i: Journal of Instrumentation, ISSN 1748-0221, E-ISSN 1748-0221, Vol. 14, artikel-id C09011Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Convolutional neural networks (CNNs) have found applications in many image processing tasks, such as feature extraction, image classification, and object recognition. It has also been shown that the inverse of CNNs, so-called deconvolutional neural networks, can be used for inverse problems such as plasma tomography. In essence, plasma tomography consists in reconstructing the 2D plasma profile on a poloidal cross-section of a fusion device, based on line-integrated measurements from multiple radiation detectors. Since the reconstruction process is computationally intensive, a deconvolutional neural network trained to produce the same results will yield a significant computational speedup, at the expense of a small error which can be assessed using different metrics. In this work, we discuss the design principles behind such networks, including the use of multiple layers, how they can be stacked, and how their dimensions can be tuned according to the number of detectors and the desired tomographic resolution for a given fusion device. We describe the application of such networks at JET and COMPASS, where at JET we use the bolometer system, and at COMPASS we use the soft X-ray diagnostic based on photodiode arrays.

  • 17.
    Chulapakorn, Thawatchart
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sychugov, Ilya
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Suvanam, Sethu Saveda
    Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden.
    Linnros, Jan
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Hallén, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, Tandemlaboratoriet. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Royal Institute of Technology, School of Information & Communication Technology, SE-16440 Kista, Sweden.
    Impact of H-Uptake from Forming Gas Annealing and Ion Implantation on the Photoluminescence of Si Nanoparticles2018Ingår i: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 215, nr 3, artikel-id 1700444Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Silicon nanoparticles (SiNPs) are formed by implanting 70keV Si+ into a SiO2-film and subsequent thermal annealing. SiNP samples are further annealed in forming gas. Another group of samples containing SiNP is implanted by 7.5keV H+ and subsequently annealed in N-2-atmosphere at 450 degrees C to reduce implantation damage. Nuclear reaction analysis (NRA) is employed to establish depth profiles of the H-concentration. Enhanced hydrogen concentrations are found close to the SiO2 surface, with particularly high concentrations for the as-implanted SiO2. However, no detectable uptake of hydrogen is observed by NRA for samples treated by forming gas annealing (FGA). H-concentrations detected after H-implantation follow calculated implantation profiles. Photoluminescence (PL) spectroscopy is performed at room temperature to observe the SiNP PL. Whereas FGA is found to increase PL under certain conditions, i.e., annealing at high temperatures, increasing implantation fluence of H reduces the SiNP PL. Hydrogen implantation also introduces additional defect PL. After low-temperature annealing, the SiNP PL is found to improve, but the process is not found equivalently efficient as conventional FGA.

  • 18.
    Chulapakorn, Thawatchart
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sychugov, Ilya
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Ottosson, Mikael
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Kemiska sektionen, Institutionen för kemi - Ångström, Oorganisk kemi.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Moro, Marcos
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Linnros, Jan
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Hallén, Anders
    Royal Institute of Technology, School of Information & Communication Technology, SE-16440 Kista, Sweden.
    Luminescence of Silicon Nanoparticles from Oxygen Implanted Silicon2018Ingår i: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 86, s. 18-22Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Oxygen with a kinetic energy of 20 keV is implanted in a silicon wafer (100) at different fluences, followed by post-implantation thermal annealing (PIA) performed at temperatures ranging from 1000 to 1200 degrees C, in order to form luminescent silicon nanoparticles (SiNPs) and also to reduce the damage induced by the implantation. As a result of this procedure, a surface SiOx layer (with 0 < x < 2) with embedded crystalline Si nanoparticles has been created. The samples yield similar luminescence in terms of peak wavelength, lifetime, and absorption as recorded from SiNPs obtained by the more conventional method of implanting silicon into silicon dioxide. The oxygen implantation profile is characterized by elastic recoil detection (ERD) technique to obtain the excess concentration of Si in a presumed SiO2 environment. The physical structure of the implanted Si wafer is examined by grazing incidence X-ray diffraction (GIXRD). Photoluminescence (PL) techniques, including PL spectroscopy, time-resolved PL (TRPL), and photoluminescence excitation (PLE) spectroscopy are carried out in order to identify the PL origin. The results show that luminescent SiNPs are formed in a Si sample implanted by oxygen with a fluence of 2 x 10(17) atoms cm(-2) and PIA at 1000 degrees C. These SiNPs have a broad size range of 6-24 nm, as evaluated from the GIXRD result. Samples implanted at a lower fluence and/or annealed at higher temperature show only weak defect-related PL. With further optimization of the SiNP luminescence, the method may offer a simple route for integration of luminescent Si in mainstream semiconductor fabrication.

  • 19.
    Chulapakorn, Thawatchart
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sychugov, Ilya
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Suvanam, Sethu Saveda
    Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden.
    Linnros, Jan
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hallén, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, Tandemlaboratoriet. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Royal Institute of Technology, School of Information & Communication Technology, SE-16440 Kista, Sweden.
    Influence of Swift Heavy Ion Irradiation on the Photoluminescence of Si-nanoparticles and Defects in SiO22017Ingår i: Nanotechnology, ISSN 0957-4484, E-ISSN 1361-6528, Vol. 28, nr 37, artikel-id 375603Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The influence of swift heavy ion (SHI) irradiation on the photoluminescence (PL) of silicon nanoparticles (SiNPs) and defects in SiO2-film is investigated. SiNPs were formed by implantation of 70 keV Si+ and subsequent thermal annealing to produce optically active SiNPs and to remove implantation-induced defects. Seven different ion species with energy between 3-36 MeV and fluence from 10(11)-10(14) cm(-2) were employed for irradiation of the implanted samples prior to the thermal annealing. Induced changes in defect and SiNP PL were characterized and correlated with the specific energy loss of the employed SHIs. We find that SHI irradiation, performed before the thermal annealing process, affects both defect and SiNP PL. The change of defect and SiNP PL due to SHI irradiation is found to show a threshold-like behaviour with respect to the electronic stopping power, where a decrease in defect PL and an anticorrelated increase in SiNP PL after the subsequent thermal annealing are observed for electronic stopping exceeding 3-5 keV nm(-1). PL intensities are also compared as a function of total energy deposition and nuclear energy loss. The observed effects can be explained by ion track formation as well as a different type of annealing mechanisms active for SHI irradiation compared to the thermal annealing.

  • 20.
    Chulapakorn, Thawatchart
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sychugov, Ilya
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Suvanam, Sethu Saveda
    Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden.
    Linnros, Jan
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hallén, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, Tandemlaboratoriet. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Royal Institute of Technology, School of Information & Communication Technology, SE-16440 Kista, Sweden.
    MeV Ion Irradiation Effects on the Luminescence Properties of Si-implanted SiO2-thin Films2016Ingår i: Physica Status Solidi. C, Current topics in solid state physics, ISSN 1610-1634, E-ISSN 1610-1642, Vol. 13, nr 10-12, s. 921-926Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The effects of MeV heavy ion irradiation at varying fluence and flux on excess Si, introduced in SiO2 by keV ion implantation, are investigated by photoluminescence (PL). From the PL peak wavelength (lambda) and decay lifetime (t), two PL sources are distinguished: i) quasi-direct recombination of excitons of Si-nanoparticles (SiNPs), appearing after thermal annealing (lambda > 720 nm, tau similar to mu s), and ii) fast-decay PL, possibly due to oxide-related defects (lambda similar to 575-690 nm, tau similar to ns). The fast-decay PL (ii) observed before and after ion irradiation is induced by ion implantation. It is found that this fast-decay luminescence decreases for higher irradiation fluence of MeV heavy ions. After thermal annealing (forming SiNPs), the SiNP PL is reduced for samples irradiated by MeV heavy ions but found to stabilize at higher level for higher irradiation flux; the (ii) band vanishes as a result of annealing. The results are discussed in terms of the influence of electronic and nuclear stopping powers.

  • 21.
    Chulapakorn, Thawatchart
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sychugov, Ilya
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Suvanam, Sethu Saveda
    Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden.
    Linnros, Jan
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Wolff, Max
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Possnert, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, Tandemlaboratoriet. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi.
    Hallén, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, Tandemlaboratoriet. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Royal Institute of Technology, School of Information & Communication Technology, SE-16440 Kista, Sweden.
    Si-nanoparticle Synthesis Using Ion Implantation and MeV Ion Irradiation2015Ingår i: Physica Status Solidi C: Current Topics In Solid State Physics, Vol 12, No 12 / [ed] Mascher, P; Moreels, I; Climente, JI; Andre, P; Reece, P; Ribierre, JC; Pereira, L; Philippe, L; Pellicer, E, 2015, nr 12, s. 1301-1305Konferensbidrag (Refereegranskat)
    Abstract [en]

    A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO2 matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO2 by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV 127I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence.

  • 22.
    Chulapakorn, Thawatchart
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sychugov, Ilya
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Suvanam, Sethu Saveda
    Royal Institute of Technology (KTH), School of Information and Communication Technology, PO Box Electrum 229, SE-16440 Kista, Sweden.
    Xie, Ling
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Tillämpad materialvetenskap.
    Ottosson, Mikael
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Kemiska sektionen, Institutionen för kemi - Ångström, Oorganisk kemi.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    LEIFER, KLAUS
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Tillämpad materialvetenskap. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Linnros, Jan
    Royal Institute of Technology (KTH), Department of Materials and Nano Physics, SE-164 40 Kista, Sweden.
    Hallén, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, Tandemlaboratoriet. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Royal Institute of Technology, School of Information & Communication Technology, SE-16440 Kista, Sweden.
    Ion Beam Synthesis of Luminescent Silicon NanoparticlesManuskript (preprint) (Övrigt vetenskapligt)
  • 23.
    Englund, Sven
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Grini, Sigbjorn
    Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, Gaustdalleen 23 A, N-0316 Oslo, Norway.
    Donzel-Gargand, Olivier
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Paneta, Valentina
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Kosyak, Volodymyr
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Scragg, Jonathan J.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Platzer Björkman, Charlotte
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    TiN Interlayers with Varied Thickness in Cu2ZnSnS(e)(4) Thin Film Solar Cells: Effect on Na Diffusion, Back Contact Stability, and Performance2018Ingår i: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 215, nr 23, artikel-id 1800491Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In this study, interlayers with varied thickness of TiN between Cu2ZnSnS(e)(4) (CZTS(e)) absorbers and Mo on soda-lime glass substrates are investigated for CZTS(e) thin film solar cells. Na diffusion is analyzed using Secondary Ion Mass Spectrometry and it is found that the use of thick TiN interlayers facilitates Na diffusion into the absorbers. The CZTS(e)/TiN/Mo interfaces are scrutinized using Transmission Electron Microscopy (TEM) Electron Energy Loss Spectroscopy (EELS). It is found that diffusion of chalcogens present in the precursor occurs through openings, resulting from surface roughness in the Mo, in the otherwise chemically stable TiN interlayers, forming point contacts of MoS(e)(2). It is further established that both chalcogens and Mo diffuse along the TiN interlayer grain boundaries. Solar cell performance for sulfur-annealed samples improved with increased thickness of TiN, and with a 200 nm TiN interlayer, the solar cell performance is comparable to a typical Mo reference. Pure TiN bulk contacts are investigated and shown to work, but the performance is still inferior to the TiN interlayer back contacts. The use of thick TiN interlayers offers a pathway to achieve high efficiency CZTS(e) solar cells on highly inert back contacts.

  • 24.
    Englund, Sven
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap, Solcellsteknik.
    Kubart, Tomas
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för elektroteknik, Fasta tillståndets elektronik.
    Keller, Jan
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap, Solcellsteknik.
    Moro, Marcos V.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Suvanam, Sethu Saveda
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för elektroteknik, Fasta tillståndets elektronik.
    Scragg, Jonathan J.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för elektroteknik, Fasta tillståndets elektronik.
    Platzer Björkman, Charlotte
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för materialvetenskap, Solcellsteknik.
    Antimony-Doped Tin Oxide as Transparent Back Contact in Cu2ZnSnS4 Thin-Film Solar Cells2019Ingår i: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 216, nr 22, artikel-id 1900542Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T < 550 degrees C. The electrical properties of ATO are even found to improve when CZTS is annealed at T = 534 degrees C. At T = 580 degrees C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.

    Publikationen är tillgänglig i fulltext från 2021-11-21 15:14
  • 25.
    Englund, Sven
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik. Uppsala universitet.
    Paneta, Valentina
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ren, Yi
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Donzel-Gargand, Olivier
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Larsen, Jes K
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Scragg, Jonathan J.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Platzer Björkman, Charlotte
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Characterization of TiN back contact interlayers with varied thickness for Cu2ZnSn(S,Se)4 thin film solar cells2017Ingår i: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 639, s. 91-97Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    TiN thin films have previously been used as intermediate barrier layers on Mo back contacts in CZTS(e) solar cells to suppress excessive reaction of the Mo in the annealing step. In this work, TiN films with various thickness (20, 50 and 200 nm) were prepared with reactive DC magnetron sputtering on Mo/SLG substrates and annealed, without CZTS(e) layers, in either S or Se atmospheres. The as-deposited references and the annealed samples were characterized with X-ray Photoelectron Spectroscopy, X-ray Diffraction, Time-of-Flight-Elastic Recoil Detection Analysis, Time-of-Flight-Medium-Energy Ion Scattering, Scanning Electron Microscopy and Scanning Transmission Electron Microscopy – Electron Energy Loss Spectroscopy. It was found that the as-deposited TiN layers below 50 nm show discontinuities, which could be related to the surface roughness of the Mo. Upon annealing, TiN layers dramatically reduced the formation of MoS(e)2, but did not prevent the sulfurization or selenization of Mo. The MoS(e)2 had formed near the discontinuities, both below and above the TiN layers. Another unexpected finding was that the thicker TiN layer increased the amount of Na diffused to the surface after anneal, and we suggest that this effect is related to the Na affinity of the TiN layers and the MoS(e)2 thickness.

    Ladda ner fulltext (pdf)
    Characterization of TiN back contact interlayers with varied thickness for Cu2ZnSn(S,Se)4 thin film solar cells
  • 26. Eriksson, F.
    et al.
    Andersson Sundén, Erik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Binda, Federico
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Cecconello, Marco
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Conroy, Sean
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ericsson, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Eriksson, Jacob
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Eriksson, Jacob
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hjalmarsson, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Possnert, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sahlberg, Arne
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sjöstrand, Henrik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Skiba, Mateusz
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Weiszflog, Matthias
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Zychor, I
    Interpretative and predictive modelling of Joint European Torus collisionality scans2019Ingår i: Plasma Physics and Controlled Fusion, ISSN 0741-3335, E-ISSN 1361-6587, Vol. 61, nr 11, artikel-id 115004Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Transport modelling of Joint European Torus (JET) dimensionless collisionality scaling experiments in various operational scenarios is presented. Interpretative simulations at a fixed radial position are combined with predictive JETTO simulations of temperatures and densities, using the TGLF transport model. The model includes electromagnetic effects and collisions as well as (E)over-right-arrow x (b)over-right-arrow shear in Miller geometry. Focus is on particle transport and the role of the neutral beam injection (NBI) particle source for the density peaking. The experimental 3-point collisionality scans include L-mode, and H-mode (D and H and higher beta D plasma) plasmas in a total of 12 discharges. Experimental results presented in (Tala et al 2017 44th EPS Conf.) indicate that for the H-mode scans, the NBI particle source plays an important role for the density peaking, whereas for the L-mode scan, the influence of the particle source is small. In general, both the interpretative and predictive transport simulations support the experimental conclusions on the role of the NBI particle source for the 12 JET discharges.

    Ladda ner fulltext (pdf)
    fulltext
  • 27.
    Fluch, Ulrike
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Kemiska sektionen, Institutionen för kemi - Ångström, Molekylär biomimetik.
    Paneta, Valentina
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ott, Sascha
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Kemiska sektionen, Institutionen för kemi - Ångström, Molekylär biomimetik.
    Uniform distribution of post-synthetic linker exchange in metal-organic frameworks revealed by Rutherford backscattering spectrometry2017Ingår i: Chemical Communications, ISSN 1359-7345, E-ISSN 1364-548X, Vol. 53, nr 48, s. 6516-6519Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Rutherford backscattering spectrometry (RBS) has been used for the first time to study post-synthetic linker exchange (PSE) in metal-organic frameworks. RBS is a non-invasive method to quantify the amount of introduced linker, as well as providing a means for depth profiling in order to identify the preferred localization of the introduced linker. The exchange of benzenedicarboxylate (bdc) by similarly sized 2-iodobenzenedicarboxylate (I-bdc) proceeds considerably slower than migration of I-dbc through the UiO-66 crystal. Consequently, the I-bdc is found evenly distributed throughout the UiO-66 samples, even at very short PSE exposure times.

  • 28. Garcia, J.
    et al.
    Andersson Sundén, Erik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Binda, Federico
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Cecconello, Marco
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Conroy, Sean
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ericsson, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Eriksson, Jacob
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hellesen, Carl
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hjalmarsson, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Possnert, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sahlberg, Arne
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sjöstrand, Henrik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Skiba, Mateusz
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Weiszflog, Matthias
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Zychor, I
    A new mechanism for increasing density peaking in tokamaks: improvement of the inward particle pinch with edge E x B shearing2019Ingår i: Plasma Physics and Controlled Fusion, ISSN 0741-3335, E-ISSN 1361-6587, Vol. 61, nr 10, artikel-id 104002Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Developing successful tokamak operation scenarios, as well as confident extrapolation of present-day knowledge requires a rigorous understanding of plasma turbulence, which largely determines the quality of the confinement. In particular, accurate particle transport predictions are essential due to the strong dependence of fusion power or bootstrap current on the particle density details. Here, gyrokinetic turbulence simulations are performed with physics inputs taken from a JET power scan, for which a relatively weak degradation of energy confinement and a significant density peaking is obtained with increasing input power. This way physics parameters that lead to such increase in the density peaking shall be elucidated. While well-known candidates, such as the collisionality, previously found in other studies are also recovered in this study, it is furthermore found that edge E x B shearing may adopt a crucial role by enhancing the inward pinch. These results may indicate that a plasma with rotational shear could develop a stronger density peaking as compared to a non-rotating one, because its inward convection is increased compared to the outward diffusive particle flux as long as this rotation has a significant on E x B flow shear stabilization. The possibly significant implications for future devices, which will exhibit much less torque compared to present day experiments, are discussed.

  • 29. Garcia, J.
    et al.
    Andersson Sundén, Erik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Binda, Federico
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Cecconello, Marco
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Conroy, Sean
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ericsson, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Eriksson, Jacob
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hellesen, Carl
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hjalmarsson, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Possnert, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sahlberg, Arne
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sjöstrand, Henrik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Skiba, Mateusz
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Weiszflog, Matthias
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Zychor, I
    First principles and integrated modelling achievements towards trustful fusion power predictions for JET and ITER2019Ingår i: Nuclear Fusion, ISSN 0029-5515, E-ISSN 1741-4326, Vol. 59, nr 8, artikel-id 086047Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Predictability of burning plasmas is a key issue for designing and building credible future fusion devices. In this context, an important effort of physics understanding and guidance is being carried out in parallel to JET experimental campaigns in H and D by performing analyses and modelling towards an improvement of the understanding of DT physics for the optimization of the JET-DT neutron yield and fusion born alpha particle physics. Extrapolations to JET-DT from recent experiments using the maximum power available have been performed including some of the most sophisticated codes and a broad selection of models. There is a general agreement that 11-15 MW of fusion power can be expected in DT for the hybrid and baseline scenarios. On the other hand, in high beta, torque and fast ion fraction conditions, isotope effects could be favourable leading to higher fusion yield. It is shown that alpha particles related physics, such as TAE destabilization or fusion power electron heating, could be studied in ITER relevant JET-DT plasmas.

  • 30.
    Glechner, T.
    et al.
    TU Wien, Inst Mat Sci & Technol, A-1060 Vienna, Austria.
    Mayrhofer, P. H.
    TU Wien, Inst Mat Sci & Technol, A-1060 Vienna, Austria.
    Holec, D.
    Univ Leoben, Dept Mat Sci, A-8700 Leoben, Austria.
    Fritze, Stefan
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Kemiska sektionen, Institutionen för kemi - Ångström, Oorganisk kemi.
    Lewin, Erik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Kemiska sektionen, Institutionen för kemi - Ångström, Oorganisk kemi.
    Paneta, Valentina
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Kolozsvari, S.
    Plansee Composite Mat GmbH, D-86983 Lechbruck, Germany.
    Riedl, H.
    TU Wien, Inst Mat Sci & Technol, A-1060 Vienna, Austria.
    Tuning structure and mechanical properties of Ta-C coatings by N-alloying and vacancy population2018Ingår i: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 8, artikel-id 17669Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Tailoring mechanical properties of transition metal carbides by substituting carbon with nitrogen atoms is a highly interesting approach, as thereby the bonding state changes towards a more metallic like character and thus ductility can be increased. Based on ab initio calculations we could prove experimentally, that up to a nitrogen content of about 68% on the non-metallic sublattice, Ta-C-N crystals prevail a face centered cubic structure for sputter deposited thin films. The cubic structure is partly stabilized by non-metallic as well as Ta vacancies-the latter are decisive for nitrogen rich compositions. With increasing nitrogen content, the originally super-hard fcc-TaC0.71 thin films soften from 40 GPa to 26 GPa for TaC0.33N0.67, accompanied by a decrease of the indentation modulus. With increasing nitrogen on the non-metallic sublattice (hence, decreasing C) the damage tolerance of Ta-C based coatings increases, when characterized after the Pugh and Pettifor criteria. Consequently, varying the non-metallic sublattice population allows for an effective tuning and designing of intrinsic coating properties.

    Ladda ner fulltext (pdf)
    FULLTEXT01
  • 31.
    Gleich, Stephan
    et al.
    Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany..
    Soler, Rafael
    Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany..
    Fager, Hanna
    Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany.;Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Bolvardi, Hamid
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Achenbach, Jan-Ole
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Hans, Marcus
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Schneider, Jochen M.
    Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany.;Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Dehm, Gerhard
    Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany..
    Scheu, Christina
    Max Planck Inst Eisenforsch GmbH, Max Planck Str 1, D-40237 Dusseldorf, Germany.;Rhein Westfal TH Aachen, Mat Analyt, Kopernikusstr 10, D-52074 Aachen, Germany..
    Modifying the nanostructure and the mechanical properties of Mo2BC hard coatings: Influence of substrate temperature during magnetron sputtering2018Ingår i: Materials & design, ISSN 0264-1275, E-ISSN 1873-4197, Vol. 142, s. 203-211Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    A reduction in synthesis temperature is favorable for hard coatings, which are designed for industrial applications, as manufacturing costs can be saved and technologically relevant substrate materials are often temperature-sensitive. In this study, we analyzed Mo2BC hard coatings deposited by direct current magnetron sputtering at different substrate temperatures, ranging from 380 degrees C to 630 degrees C. Transmission electron microscopy investigations revealed that a dense structure of columnar grains, which formed at a substrate temperature of 630 degrees C, continuously diminishes with decreasing substrate temperature. It almost vanishes in the coating deposited at 380 degrees C, which shows nanocrystals of similar to 1 nm in diameter embedded in an amorphous matrix. Moreover, Argon from the deposition process is incorporated in the film and its amount increases with decreasing substrate temperature. Nanoindentation experiments provided evidence that hardness and Young's modulus are modified by the nanostructure of the analyzed Mo2BC coatings. A substrate temperature rise from 380 degrees C to 630 degrees C resulted in an increase in hardness (21 GPa to 28 GPa) and Young's modulus (259 GPa to 462 GPa). We conclude that the substrate temperature determines the nanostructure and the associated changes in bond strength and stiffness and thus, influences hardness and Young's modulus of the coatings.

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  • 32. Goebl, D.
    et al.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Abad, E.
    Monreal, R. C.
    Bauer, P.
    Auger neutralization of He+ on Cu surfaces: Simulation of azimuthal scans2013Ingår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 317, nr Part A, s. 23-27Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Charge exchange by Auger neutralization (AN) plays an important role in surface analysis techniques such as low energy ion scattering (LEIS). Recent advances in the theoretical description of AN have included a model based on a linear combination of atomic orbitals (LCAO) approach, which is able to calculate accurate neutralization probabilities of He+ due to AN in LEIS. Previous investigations have shown that the neutralization probability is strongly influenced by the distance dependent shift of the He 1s level. In this study simulations of He+ scattered from Cu(100) and Cu(110) surfaces at fixed azimuth angles are presented. Additionally, the azimuth dependence of ion- and neutral-yield for He+ scattered from Cu(100) is simulated and compared to experimental data. Calculations were performed using the LCAO model in combination with molecular dynamics simulations. The excellent agreement between simulation and experiment provides evidence that the obtained values for the level shift are a characteristic property of the surface.

  • 33. Goebl, D.
    et al.
    Roth, D.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Monreal, R. C.
    Abad, E.
    Putz, A.
    Bauer, P.
    Quasi-resonant neutralization of He+ ions at a germanium surface2013Ingår i: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 25, nr 48, s. 485006-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    When low-energy He ions are scattered from a Ge surface, the fraction of positive ions exhibits characteristic oscillations as a function of ion energy. These oscillations are caused by quasi-resonant neutralization (qRN), a process which is active for materials with a narrow band nearly resonant with the unperturbed He 1s-level. In this paper we measure the fraction of He+ backscattered from Ge(100). In conjunction with recently developed theoretical methods, we extract quantitative information on the efficiency of qRN. Our evaluation reveals that qRN is a highly efficient process leading to ion fractions two orders of magnitude lower than in systems for which neutralization is only due to Auger processes.

  • 34.
    Greczynski, G.
    et al.
    Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden.;Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Mraz, S.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Hans, M.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Lu, J.
    Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden..
    Hultman, L.
    Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden..
    Schneider, J. M.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Unprecedented Al supersaturation in single-phase rock salt structure VAlN films by Al+ subplantation2017Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 121, nr 17, artikel-id 171907Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Modern applications of refractory ceramic thin films, predominantly as wear-protective coatings on cutting tools and on components utilized in automotive engines, require a combination of excellent mechanical properties, thermal stability, and oxidation resistance. Conventional design approaches for transition metal nitride coatings with improved thermal and chemical stability are based on alloying with Al. It is well known that the solubility of Al in NaCl-structure transition metal nitrides is limited. Hence, the great challenge is to increase the Al concentration substantially while avoiding precipitation of the thermodynamically favored wurtzite-AlN phase, which is detrimental to mechanical properties. Here, we use VAlN as a model system to illustrate a new concept for the synthesis of metastable single-phase NaCl-structure thin films with the Al content far beyond solubility limits obtained with conventional plasma processes. This supersaturation is achieved by separating the film-forming species in time and energy domains through synchronization of the 70-mu s-long pulsed substrate bias with intense periodic fluxes of energetic Al+ metal ions during reactive hybrid high power impulse magnetron sputtering of the Al target and direct current magnetron sputtering of the V target in the Ar/N-2 gas mixture. Hereby, Al is subplanted into the cubic VN grains formed by the continuous flux of low-energy V neutrals. We show that Al subplantation enables an unprecedented 42% increase in metastable Al solubility limit in V1-xAlxN, from x-0.52 obtained with the conventional method to 0.75. The elastic modulus is 325 +/- 5GPa, in excellent agreement with density functional theory calculations, and approximately 50% higher than for corresponding films grown by dc magnetron sputtering. The extension of the presented strategy to other Al-ion-assisted vapor deposition methods or materials systems is straightforward, which opens up the way for producing supersaturated single-phase functional ceramic alloy thin films combining excellent mechanical properties with high oxidation resistance.

  • 35.
    Greczynski, G.
    et al.
    Linkoping Univ, IFM, Dept Phys, Thin Film Phys Div, SE-58183 Linkoping, Sweden..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hultman, L.
    Linkoping Univ, IFM, Dept Phys, Thin Film Phys Div, SE-58183 Linkoping, Sweden..
    Reference binding energies of transition metal carbides by core-level x-ray photoelectron spectroscopy free from Ar+ etching artefacts2018Ingår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 436, s. 102-110Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We report x-ray photoelectron spectroscopy (XPS) core level binding energies (BE's) for the widely-applicable groups IVb-VIb transition metal carbides (TMCs) TiC, VC, CrC, ZrC, NbC, MoC, HfC, TaC, and WC. Thin film samples are grown in the same deposition system, by dc magnetron co-sputtering from graphite and respective elemental metal targets in Ar atmosphere. To remove surface contaminations resulting from exposure to air during sample transfer from the growth chamber into the XPS system, layers are either (i) Ar+ ion-etched or (ii) UHV-annealed in situ prior to XPS analyses. High resolution XPS spectra reveal that even gentle etching affects the shape of core level signals, as well as BE values, which are systematically offset by 0.2-0.5 eV towards lower BE. These destructive effects of Ar+ ion etch become more pronounced with increasing the metal atom mass due to an increasing carbon-to-metal sputter yield ratio. Systematic analysis reveals that for each row in the periodic table (3d, 4d, and 5d) C 1s BE increases from left to right indicative of a decreased charge transfer from TM to C atoms, hence bond weakening. Moreover, C 1s BE decreases linearly with increasing carbide/metal melting point ratio. Spectra reported here, acquired from a consistent set of samples in the same instrument, should serve as a reference for true deconvolution of complex XPS cases, including multinary carbides, nitrides, and carbonitrides.

  • 36.
    Greczynski, G.
    et al.
    Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Lu, J.
    Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden..
    Hultman, L.
    Linkoping Univ, Dept Phys IFM, Thin Film Phys Div, SE-58183 Linkoping, Sweden..
    Core-level spectra and binding energies of transition metal nitrides by non-destructive x-ray photoelectron spectroscopy through capping layers2017Ingår i: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 396, s. 347-358Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We present the first measurements of x-ray photoelectron spectroscopy (XPS) core level binding energies (BE: s) for the widely-applicable group IVb-VIb polycrystalline transition metal nitrides (TMN's) TiN, VN, CrN, ZrN, NbN, MoN, HfN, TaN, and WN as well as AlN and SiN, which are common components in the TMN-based alloy systems. Nitride thin film samples were grown at 400.degrees C by reactive dc magnetron sputtering from elemental targets in Ar/ N-2 atmosphere. For XPS measurements, layers are either (i) Ar+ ion-etched to remove surface oxides resulting from the air exposure during sample transfer from the growth chamber into the XPS system, or (ii) in situ capped with a few nm thick Cr or W overlayers in the deposition system prior to air-exposure and loading into the XPS instrument. Film elemental composition and phase content is thoroughly characterized with time-of-flight elastic recoil detection analysis (ToF(-) ERDA), Rutherford backscattering spectrometry (RBS), and x-ray diffraction. High energy resolution core level XPS spectra acquired with monochromatic Al K alpha radiation on the ISO-calibrated instrument reveal that even mild etching conditions result in the formation of a nitrogen-deficient surface layer that substantially affects the extracted binding energy values. These spectra-modifying effects of Ar+ ion bombardment increase with increasing the metal atom mass due to an increasing nitrogen-to-metal sputter yield ratio. The superior quality of the XPS spectra obtained in a non-destructive way from capped TMN films is evident from that numerous metal peaks, including Ti 2p, V 2p, Zr 3d, and Hf 4f, exhibit pronounced satellite features, in agreement with previously published spectra from layers grown and analyzed in situ. In addition, the N/ metal concentration ratios are found to be 25-90% higher than those obtained from the corresponding ion-etched surfaces, and in most cases agree very well with the RBS and ToF-E ERDA values. The N 1 s BE: s extracted from capped TMN films, thus characteristic of a native surface, show a systematic trend, which contrasts with the large BE spread of literature "reference" values. Hence, non-destructive core level XPS employing capping layers provides an opportunity to obtain high-quality spectra, characteristic of virgin in situ grown and analyzed TMN films, although with larger versatility, and allows for extracting core level BE values that are more reliable than those obtained from sputter-cleaned N-deficient surfaces. Results presented here, recorded from a consistent set of binary TMN's grown under the same conditions and analyzed in the same instrument, provide a useful reference for future XPS studies of multinary materials systems allowing for true deconvolution of complex core level spectra.

  • 37.
    Gründlinger, Petra
    et al.
    Johannes Kepler Univ Linz, Inst Expt Phys, Surface Sci Div, Altenberger Str 69, A-4040 Linz, Austria.
    Györök, Michael
    Johannes Kepler Univ Linz, Inst Expt Phys, Surface Sci Div, Altenberger Str 69, A-4040 Linz, Austria.
    Wolfmayr, Sebastian
    Phillipps Univ Marburg, Phys Dept, Mol Solids Grp, Renthof 7, D-35032 Marburg, Germany.
    Breuer, Tobias
    Phillipps Univ Marburg, Phys Dept, Mol Solids Grp, Renthof 7, D-35032 Marburg, Germany.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Bruckner, Barbara
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Monkowius, Uwe
    Johannes Kepler Univ Linz, Sch Educ, Altenberger Str 69, A-4040 Linz, Austria.
    Wagner, Thorsten
    Johannes Kepler Univ Linz, Inst Expt Phys, Surface Sci Div, Altenberger Str 69, A-4040 Linz, Austria.
    Aggregation of Au(i)-complexes on amorphous substrates governed by aurophilicity2019Ingår i: Dalton Transactions, ISSN 1477-9226, E-ISSN 1477-9234, Vol. 48, nr 39, s. 14712-14723Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    In single crystals of 2-naphthylisonitrile-gold(i)-halide (halide = Cl, Br, I) complexes, AuMIDLINE HORIZONTAL ELLIPSISAu distances are found to be significantly shorter than twice the van der Waals radius, indicating attractive interactions between gold atoms in adjacent molecules. In the particular case of the studied 2-naphthylisonitrile-gold(i) complexes, homodimers are the common structural motifs, in which the linearly coordinated gold exhibits a crossed swords arrangement with the Au atoms of two molecules being at the intersection point. The crossed swords motif is preserved upon physical vapour deposition of both the chlorine and bromine derivatives on amorphous substrates like glass and glassy carbon. The determined activation energies of desorption for the chlorine (0.9 eV) and the bromine (1.2 eV) derivative are comparable to that of unsubstituted naphthalene. Using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and ion scattering (RBS), we confirmed the chemical integrity of the molecules in thin films and revealed the orientation of the crossed swords dimers with respect to the substrate surface.

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  • 38. Hans, M.
    et al.
    Baben, M. To
    Music, D.
    Ebenhoech, J.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Kurapov, D.
    Arndt, M.
    Rudigier, H.
    Schneider, J. M.
    Effect of oxygen incorporation on the structure and elasticity of Ti-Al-O-N coatings synthesized by cathodic arc and high power pulsed magnetron sputtering2014Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 116, nr 9, s. 093515-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ti-Al-O-N coatings were synthesized by cathodic arc and high power pulsed magnetron sputtering. The chemical composition of the coatings was determined by means of elastic recoil detection analysis and energy dispersive X-ray spectroscopy. The effect of oxygen incorporation on the stress-free lattice parameters and Young's moduli of Ti-Al-O-N coatings was investigated by X-ray diffraction and nanoindentation, respectively. As nitrogen is substituted by oxygen, implications for the charge balance may be expected. A reduction in equilibrium volume with increasing O concentration is identified by X-ray diffraction and density functional theory calculations of Ti-Al-O-N supercells reveal the concomitant formation of metal vacancies. Hence, the oxygen incorporation-induced formation of metal vacancies enables charge balancing. Furthermore, nanoindentation experiments reveal a decrease in elastic modulus with increasing O concentration. Based on ab initio data, two causes can be identified for this: First, the metal vacancy-induced reduction in elasticity; and second, the formation of, compared to the corresponding metal nitride bonds, relatively weak Ti-O and Al-O bonds.

  • 39.
    Hans, Marcus
    et al.
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Patterer, Lena
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Music, Denis
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Holzapfel, Damian M.
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Evertz, Simon
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Schnabel, Volker
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Stelzer, Bastian
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Voelker, Bernhard
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany; Max Planck Inst Eisenforsch GmbH, Dusseldorf, Germany.
    Widrig, Beno
    Oerlikon Surface Solut AG, Oerlikon Balzers, Balzers, Liechtenstein.
    Eriksson, Anders O.
    Oerlikon Surface Solut AG, Oerlikon Balzers, Balzers, Liechtenstein.
    Ramm, Juergen
    Oerlikon Surface Solut AG, Oerlikon Balzers, Balzers, Liechtenstein.
    Arndt, Mirjam
    Oerlikon Surface Solut AG, Oerlikon Balzers, Balzers, Liechtenstein.
    Rudigier, Helmut
    Oerlikon Surface Solut AG, Oerlikon Balzers, Pfaffikon, Switzerland.
    Schneider, Jochen M.
    Rhein Westfal TH Aachen, Mat Chem, Aachen, Germany.
    Stress-Dependent Elasticity of TiAlN Coatings2019Ingår i: Coatings, ISSN 2079-6412, Vol. 9, nr 1, artikel-id 24Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We investigate the effect of continuous vs. periodically interrupted plasma exposure during cathodic arc evaporation on the elastic modulus as well as the residual stress state of metastable cubic TiAlN coatings. Nanoindentation reveals that the elastic modulus of TiAlN grown at floating potential with continuous plasma exposure is 7%-11% larger than for coatings grown with periodically interrupted plasma exposure due to substrate rotation. In combination with X-ray stress analysis, it is evident that the elastic modulus is governed by the residual stress state. The experimental dependence of the elastic modulus on the stress state is in excellent agreement with ab initio predictions. The macroparticle surface coverage exhibits a strong angular dependence as both density and size of incorporated macroparticles are significantly lower during continuous plasma exposure. Scanning transmission electron microscopy in combination with energy dispersive X-ray spectroscopy reveals the formation of underdense boundary regions between the matrix and TiN-rich macroparticles. The estimated porosity is on the order of 1% and a porosity-induced elastic modulus reduction of 5%-9% may be expected based on effective medium theory. It appears reasonable to assume that these underdense boundary regions enable stress relaxation causing the experimentally determined reduction in elastic modulus as the population of macroparticles is increased.

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  • 40.
    Huang, Ke
    et al.
    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
    Wu, Liang
    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China;Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA.
    Wang, Maoyu
    Oregon State Univ, Sch Chem Biol & Environm Engn, Corvallis, OR 97331 USA.
    Swain, Nyayabanta
    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
    Motapothula, M.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. SRM Univ AP, Dept Phys, Amaravati 522502, Andhra Pradesh, India.
    Luo, Yongzheng
    Natl Univ Singapore, Dept Mech Engn, Singapore 117575, Singapore.
    Han, Kun
    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
    Chen, Mingfeng
    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
    Ye, Chen
    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
    Yang, Allen Jian
    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
    Xu, Huan
    Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
    Qi, Dong-chen
    Queensland Univ Technol, Sch Chem Phys & Mech Engn, ARC Ctr Excellence Future Low Energy Elect Techno, Brisbane, Qld 4001, Australia;La Trobe Univ, La Trobe Inst Mol Sci, Dept Chem & Phys, Melbourne, Vic 3086, Australia.
    N'Diaye, Alpha T.
    Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA.
    Panagopoulos, Christos
    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Shen, Lei
    Natl Univ Singapore, Dept Mech Engn, Singapore 117575, Singapore.
    Sengupta, Pinaki
    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore.
    Ma, Jing
    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
    Feng, Zhenxing
    Oregon State Univ, Sch Chem Biol & Environm Engn, Corvallis, OR 97331 USA.
    Nan, Ce-Wen
    Tsinghua Univ, Sch Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China.
    Renshaw Wang, X.
    Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore;Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore.
    Tailoring magnetic order via atomically stacking 3d/5d electrons to achieve high-performance spintronic devices2020Ingår i: APPLIED PHYSICS REVIEWS, ISSN 1931-9401, Vol. 7, nr 1, artikel-id 011401Artikel, forskningsöversikt (Refereegranskat)
    Abstract [en]

    The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, which would contribute to future applications in high-capacity storage devices and advanced computing.

  • 41.
    Hunold, Oliver
    et al.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Chen, Yen-Ting
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Music, Denis
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Persson, Per O. A.
    Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Baben, Moritz
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany.
    Achenbach, Jan-Ole
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Keuter, Philipp
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Schneider, Jochen M.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Correlative theoretical and experimental investigation of the formation of AIYB(14) and competing phases2016Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, nr 8, artikel-id 085307Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The phase formation in the boron-rich section of the Al-Y-B system has been explored by a correlative theoretical and experimental research approach. The structure of coatings deposited via high power pulsed magnetron sputtering from a compound target was studied using elastic recoil detection analysis, electron energy loss spectroscopy spectrum imaging, as well as X-ray and electron diffraction data. The formation of AlYB14 together with the (Y,Al)B-6 impurity phase, containing 1.8 at. % less B than AlYB14, was observed at a growth temperature of 800 degrees C and hence 600 degrees C below the bulk synthesis temperature. Based on quantum mechanical calculations, we infer that minute compositional variations within the film may be responsible for the formation of both icosahedrally bonded AlYB14 and cubic (Y,Al)B-6 phases. These findings are relevant for synthesis attempts of all boron rich icosahedrally bonded compounds with the space group: Imma that form ternary phases at similar compositions.

  • 42.
    Hunold, Oliver
    et al.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Keuter, Philipp
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Bliem, Pascal
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Music, Denis
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Wittmers, Friederike
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Ravensburg, Anna L.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Schneider, Jochen M.
    Rhein Westfal TH Aachen, Mat Chem, Kopernikusstr 10, D-52074 Aachen, Germany..
    Elastic properties of amorphous T0.75Y0.75B14 (T = Sc, Ti, V, Y, Zr, Nb) and the effect of O incorporation on bonding, density and elasticity (T ' = Ti, Zr)2017Ingår i: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 29, nr 8, artikel-id 085404Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We have systematically studied the effect of transition metal valence electron concentration (VEC) of amorphous T0.75Y0.75B14 (a-T0.75Y0.75B14, T = Sc, Ti, V, Y, Zr, Nb) on the elastic properties, bonding, density and electronic structure using ab initio molecular dynamics. As the transition metal VEC is increased in both periods, the bulk modulus increases linearly with molar- and mass density. This trend can be understood by a concomitant decrease in cohesive energy. T' = Ti and Zr were selected to validate the predicted data experimentally. A-Ti0.74Y0.80B14 and a-Zr0.75Y0.75B14 thin films were synthesized by high power pulsed magnetron sputtering. Chemical composition analysis revealed the presence of up to 5 at.% impurities, with O being the largest fraction. The measured Young's modulus values for a-Ti0.74Y0.80B14 (301 +/- 8 GPa) and a-Zr0.75Y0.75B14 (306 +/- 9 GPa) are more than 20% smaller than the predicted ones. The influence of O incorporation on the elastic properties for these selected systems was theoretically studied, exemplarily in a-Ti0.75Y0.75B12.75O1.25. Based on ab initio data, we suggest that a-Ti0.75Y0.75B14 exhibits a very dense B network, which is partly severed in a-Ti0.75Y0.75B12.75O1.25. Upon O incorporation, the average coordination number of B and the molar density decrease by 9% and 8%, respectively. Based on these data the more than 20% reduced Young's modulus obtained experimentally for films containing impurities compared to the calculated Young's modulus for a-Ti0.75Y0.75B14 (without incorporated oxygen) can be rationalized. The presence of oxygen impurities disrupts the strong B network causing a concomitant decrease in molar density and Young's modulus. Very good agreement between the measured and calculated Young's modulus values is obtained if the presence of impurities is considered in the calculations. The implications of these findings are that prediction efforts regarding the elastic properties of amorphous borides containing oxygen impurities on the at.% level are flawed without taking the presence of impurities into account.

  • 43.
    Jablonka, Lukas
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Kubart, Tomas
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Abedin, Ahmad
    KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden..
    Hellstrom, Per-Erik
    KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden..
    Ostling, Mikael
    KTH Royal Inst Technol, Sch Informat & Commun Technol, SE-16440 Kista, Sweden..
    Jordan-Sweet, Jean
    IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA..
    Lavoie, Christian
    IBM Corp, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA..
    Zhang, Shi-Li
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Zhang, Zhen
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Tekniska sektionen, Institutionen för teknikvetenskaper, Fasta tillståndets elektronik.
    Formation of nickel germanides from Ni layers with thickness below 10 nm2017Ingår i: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 35, nr 2, artikel-id 020602Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3 to NiGe was found to be nucleationcontrolled for Ni thicknesses < 5 nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness.

  • 44. Joffrin, E.
    et al.
    Andersson Sundén, Erik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Binda, Federico
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Cecconello, Marco
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Conroy, Sean
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Ericsson, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Eriksson, Jacob
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hellesen, Carl
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Hjalmarsson, Anders
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Possnert, Göran
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sahlberg, Arne
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Sjöstrand, Henrik
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Skiba, Mateusz
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Weiszflog, Matthias
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Zychor, I
    Overview of the JET preparation for deuterium-tritium operation with the ITER like-wall2019Ingår i: Nuclear Fusion, ISSN 0029-5515, E-ISSN 1741-4326, Vol. 59, nr 11, artikel-id 112021Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    For the past several years, the JET scientific programme (Pamela et al 2007 Fusion Eng. Des. 82 590) has been engaged in a multi-campaign effort, including experiments in D, H and T, leading up to 2020 and the first experiments with 50%/50% D-T mixtures since 1997 and the first ever D-T plasmas with the ITER mix of plasma-facing component materials. For this purpose, a concerted physics and technology programme was launched with a view to prepare the D-T campaign (DTE2). This paper addresses the key elements developed by the JET programme directly contributing to the D-T preparation. This intense preparation includes the review of the physics basis for the D-T operational scenarios, including the fusion power predictions through first principle and integrated modelling, and the impact of isotopes in the operation and physics of D-T plasmas (thermal and particle transport, high confinement mode (H-mode) access, Be and W erosion, fuel recovery, etc). This effort also requires improving several aspects of plasma operation for DTE2, such as real time control schemes, heat load control, disruption avoidance and a mitigation system (including the installation of a new shattered pellet injector), novel ion cyclotron resonance heating schemes (such as the three-ions scheme), new diagnostics (neutron camera and spectrometer, active Alfven eigenmode antennas, neutral gauges, radiation hard imaging systems...) and the calibration of the JET neutron diagnostics at 14 MeV for accurate fusion power measurement. The active preparation of JET for the 2020 D-T campaign provides an incomparable source of information and a basis for the future D-T operation of ITER, and it is also foreseen that a large number of key physics issues will be addressed in support of burning plasmas.

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  • 45.
    Junaid, Muhammad
    et al.
    Rhein Westfal TH Aachen, Mat Chem, D-52056 Aachen, Germany..
    Music, Denis
    Rhein Westfal TH Aachen, Mat Chem, D-52056 Aachen, Germany..
    Hans, Marcus
    Rhein Westfal TH Aachen, Mat Chem, D-52056 Aachen, Germany..
    Schneider, Jochen M.
    Rhein Westfal TH Aachen, Mat Chem, D-52056 Aachen, Germany..
    Scholz, Tanja
    Rhein Westfal TH Aachen, Inst Inorgan Chem, D-52056 Aachen, Germany..
    Dronskowski, Richard
    Rhein Westfal TH Aachen, Inst Inorgan Chem, D-52056 Aachen, Germany..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Structural, mechanical, and magnetic properties of GaFe3N thin films2016Ingår i: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 34, nr 4, artikel-id 040601Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Using the density-functional theory, the structural, mechanical, and magnetic properties were investigated for different GaFe3N configurations: ferromagnetic, ferrimagnetic, paramagnetic, and nonmagnetic. Ferrimagnetic and high-spin ferromagnetic states exhibit the lowest energy and are the competing ground states as the total energy difference is 0.3 meV/atom only. All theoretically predicted values could be fully confirmed by experiments. For this, the authors synthesized phase pure, homogeneous, and continuous GaFe3N films by combinatorial reactive direct current magnetron sputtering. Despite the low melting point of gallium, the authors succeeded in the growth of GaFe3N films at a temperature of 500 degrees C. Those thin films exhibit a lattice parameter of 3.794 angstrom and an elastic modulus of 226620 GPa. Magnetic susceptibility measurements evidence a magnetic phase transitions at 8.060.1 K. The nearly saturated magnetic moment at 65 T is about 1.6 mu B/Fe and is close to the theoretically determined magnetic moment for a ferrimagnetic ordering (1.72 lB/Fe).

  • 46.
    Kantre, Karim-Alexandros
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Moro, Marcos V.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Moldarev, Dmitrii
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik. Moscow Engn Phys Inst, Dept Mat Sci, Moscow 115909, Russia..
    Johansson, D.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi.
    Wessman, Dan
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, Tandemlaboratoriet.
    Wolff, Max
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Materialfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik. Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, För teknisk-naturvetenskapliga fakulteten gemensamma enheter, Tandemlaboratoriet.
    SIGMA: A Set-up for In-situ Growth, Material modification and Analysis by ion beams2020Ingår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 463, s. 96-100Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    We present a set-up for in-situ non-destructive high-resolution composition depth profiling by ion beams developed at the 5 MV 15 SDH-2 Tandem accelerator at the Angstrom laboratory at Uppsala University. The scattering chamber allows thin film deposition, modification and characterization which can be used to study the very initial stages of near-surface processes such as thin film growth, oxidation, annealing or ion implantation. We describe the available instrumentation with its specifications in detail and present experimental applications, i.e. the characterization of reactive in-situ thin film growth and controlled oxidation, as well as a study of ion implantation and the impact of thermal annealing and surface oxidation on the implantation profiles.

  • 47.
    Kantre, Karim-Alexandros
    et al.
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Paneta, Valentina
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Investigation of the energy loss of I in Au at energies below the Bragg peak2019Ingår i: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 450, s. 37-42Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    The energy loss of iodine in gold was investigated at energies below the Bragg peak. With the present work, the range of the available experimental data is extended to significantly lower energies, while the nuclear stopping power contribution is taken into account. Experiments were performed on thin film targets in reflection geometry. Electronic stopping cross sections were extracted by different approaches from experimental spectra. The obtained results have been compared to tabulated values from SRIM and previously published experimental data, where available. For all energies the obtained values are consistently higher than predicted by SRIM. Monte Carlo simulations (TRIM) have been performed to study path length distributions and the influence of nuclear stopping on the total energy loss. The results from the calculations indicate that the experimental geometry might be an important factor affecting the observed energy loss due to a selection of specific trajectories.

  • 48.
    Kiefer, David
    et al.
    Chalmers, Dept Chem & Chem Engn, S-41296 Gothenburg, Sweden..
    Yu, Liyang
    Chalmers, Dept Chem & Chem Engn, S-41296 Gothenburg, Sweden.;King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia.;King Abdullah Univ Sci & Technol KAUST, KAUST Solar Ctr KSC, Thuwal 239556900, Saudi Arabia..
    Fransson, Erik
    Chalmers, Dept Phys, S-41296 Gothenburg, Sweden..
    Gomez, Andres
    Esfera UAB, Inst Ciencia Mat Barcelona, S-08193 Bellaterra, Spain..
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Amassian, Aram
    King Abdullah Univ Sci & Technol KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia.;King Abdullah Univ Sci & Technol KAUST, KAUST Solar Ctr KSC, Thuwal 239556900, Saudi Arabia..
    Campoy-Quiles, Mariano
    Esfera UAB, Inst Ciencia Mat Barcelona, S-08193 Bellaterra, Spain..
    Müller, Christian
    Chalmers, Dept Chem & Chem Engn, S-41296 Gothenburg, Sweden..
    A Solution-Doped Polymer Semiconductor: Insulator Blend for Thermoelectrics2017Ingår i: ADVANCED SCIENCE, ISSN 2198-3844, Vol. 4, nr 1, artikel-id 1600203Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer- thick films that feature a fine distribution of the F4TCNQ dopant: semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm(-1) and Seebeck coefficient from 100 to 60 mu V K-1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m(-1)K(-1) gives rise to a thermoelectric Figure of merit ZT similar to 10(-4) that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant: semiconductor: insulator ternary blends.

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  • 49. Klimashin, F. F.
    et al.
    Riedl, H.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Paulitsch, J.
    Mayrhofer, P. H.
    Composition driven phase evolution and mechanical properties of Mo-Cr-N hard coatings2015Ingår i: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, nr 2, artikel-id 025305Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Although many research activities concentrate on transition metal nitrides, due to their excellent properties, only little is known about Mo-N based materials. We investigate in detail the influence of Cr on the structural evolution and mechanical properties of Mo-N coatings prepared at different nitrogen partial pressures. The chemical composition as well as the structural development of coatings prepared with N-2-to-total pressure ratios (p(N2)/p(T)) of 0.32 and 0.44 can best be described by the quasi-binary Mo2N-CrN tie line. Mo2N and CrN are face centered cubic (fcc), only that for Mo2N half of the N-sublattice is vacant. Consequently, with increasing Cr content, also the N-sublattice becomes less vacant and the chemical composition of fcc single-phase ternaries can be described as Mo1-xCrxN0.5(1+x). These coatings exhibit an excellent agreement between experimentally and ab initio obtained lattice parameters of fcc Mo1-xCrxN0.5(1+x). When increasing the N-2-to-total pressure ratio to pN(2)/p(T) = 0.69, the N-sublattice is already fully occupied for Cr-additions of x >= 0.4, as suggested by elastic recoil detection analysis and lattice parameter variations. The latter follows the ab initio obtained lattice parameters along the quasi-binary MoN-CrN tie line for x >= 0.5. The single-phase fcc coating with Cr/(Mo+Cr) of x similar to 0.2, prepared with pN(2)/p(T) = 0.32, exhibits the highest hardness of similar to 34 GPa among all coatings studied. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

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  • 50. Kobayashi, Takane
    et al.
    Primetzhofer, Daniel
    Uppsala universitet, Teknisk-naturvetenskapliga vetenskapsområdet, Fysiska sektionen, Institutionen för fysik och astronomi, Tillämpad kärnfysik.
    Linnarsson, Margareta
    Hallen, Anders
    Ion-stimulated desorption in the medium-energy regime2014Ingår i: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 53, nr 6, s. 060305-Artikel i tidskrift (Refereegranskat)
    Abstract [en]

    Ion-stimulated desorption in the medium-energy regime is investigated using a hydrogen rich Li2O sample. The desorbed yield dependencies for H+ and Li+ on incident ion species H-1(+) and He-4(+) in a medium energy regime are measured. For the mechanism of desorption it is considered that an inner shell electron vacancy is generated in oxygen atoms of the target by the ion impact. This inner shell vacant state is then filled by Auger transition of an electron from surrounding H or Li atoms. The resulting coulomb repulsion between H+ or Li+ and O+ leads to ejection of H+ or Li+ from the surface. (C) 2014 The Japan Society of Applied Physics

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