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  • 1. Alkhadi, H.S.
    et al.
    Tran, Tuan
    Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australia.
    Kremer, F.
    Williams, J.S.
    The influence of capping layers on pore formation in Ge during ion implantation2016In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 120, no 21, article id 215706Article in journal (Refereed)
    Abstract [en]

    Ion induced porosity in Ge has been investigated with and without a cap layer for two ion species, Ge and Sn, with respect to ion fluence and temperature. Results without a cap are consistent with a previous work in terms of an observed ion fluence and temperature dependence of porosity, but with a clear ion species effect where heavier Sn ions induce porosity at lower temperature (and fluence) than Ge. The effect of a cap layer is to suppress porosity for both Sn and Ge at lower temperatures but in different temperatures and fluence regimes. At room temperature, a cap does not suppress porosity and results in a more organised pore structure under conditions where sputtering of the underlying Ge does not occur. Finally, we observed an interesting effect in which a barrier layer of a-Ge that is denuded of pores formed directly below the cap layer. The thickness of this layer (∼ 8 nm) is largely independent of ion species, fluence, temperature, and cap material, and we suggest that this is due to viscous flow of a-Ge under ion irradiation and wetting of the cap layer to minimize the interfacial free energy.

  • 2. Kiran, M. S. R. N.
    et al.
    Tran, Tuan
    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australia.
    Smillie, L. A.
    Haberl, B.
    Subianto, D.
    Williams, J.S.
    Bradby, J.E.
    Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, article id 205901Article in journal (Refereed)
  • 3.
    Kiran, Mangalampalli
    et al.
    Canberra, Australien.
    Tran, Tuan
    Uppsala University, Disciplinary Domain of Science and Technology, Physics, Department of Physics and Astronomy, Applied Nuclear Physics.
    Temperature-dependent mechanical deformation of silicon at the nanoscale: Phase transformation versus defect propagation2015In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 117, no 20, p. 205901-Article in journal (Refereed)
    Abstract [en]

    This study uses high-temperature nanoindentation coupled with in situ electrical measurements to investigate the temperature dependence (25-200 degrees C) of the phase transformation behavior of diamond cubic (dc) silicon at the nanoscale. Along with in situ indentation and electrical data, ex situ characterizations, such as Raman and cross-sectional transmission electron microscopy, have been used to reveal the indentation-induced deformation mechanisms. We find that phase transformation and defect propagation within the crystal lattice are not mutually exclusive deformation processes at elevated temperature. Both can occur at temperatures up to 150 degrees C but to different extents, depending on the temperature and loading conditions. For nanoindentation, we observe that phase transformation is dominant below 100 degrees C but that deformation by twinning along {111} planes dominates at 150 degrees C and 200 degrees C. This work, therefore, provides clear insight into the temperature dependent deformation mechanisms in dc-Si at the nano

  • 4.
    Tran, Tuan
    et al.
    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australia.
    Gandhi, Hemi H.
    Pastor, David
    Aziz, Michael J.
    Williams, J.S.
    Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys2017In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 62, p. 192-195Article in journal (Refereed)
  • 5.
    Tran, Tuan T.
    et al.
    Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australia.
    Pastor, David
    Gandhi, Hemi H.
    Smillie, Lachlan A.
    Akey, Austin J.
    Aziz, Michael J.
    Williams, J. S.
    Synthesis of Ge1−xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material2016In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 119, article id 183102Article in journal (Refereed)
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