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  • 151.
    Forsberg, Markus
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Johansson, T
    Liu, W
    Vellaikal, M
    A Shallow and Deep Trench Isolation Process Module for RF BiCMOS2004In: J Electrochem Soc, Vol. 151, no 12, p. G839-G846Article in journal (Refereed)
  • 152.
    Forsberg, Markus
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Keskitalo, Niklas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Effect of Dopants on Mechanical Polishing of Silicon2001In: Proceedings of MAM2001, p. O4.4, March 5-7, Sigtuna Sweden, 2001Conference paper (Refereed)
  • 153.
    Forsberg, Markus
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chemical Mechanical Polishing for Surface Smoothing2001In: The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May 20-23, 2001Conference paper (Refereed)
  • 154.
    Forsberg, Markus
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Ericsson, P
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Investigation of the Effect of Impurities in Slurries Used for Chemical Mechanical Polishing1998In: The 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, p. E-70, 1998Conference paper (Refereed)
  • 155.
    Forsberg, Markus
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Pasquariello, Donato
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
    Camacho, M
    Bergman, D
    InP and Si Metal-Oxide Semiconductor Structures Fabricated Using Oxygen Plasma Assisted Wafer Bonding2003In: Journal of Electronic Materials, Vol. 32, no 3, p. 111-116Article in journal (Refereed)
  • 156. Gebara, E
    et al.
    Rorsman, N
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Zirath, H
    Eklund, Klas-Håkan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Output power characteristics of high voltage LDMOS transistors2000In: Proc of the GHz2000 Symposium, March 13-14, Gothenburg, Sweden, 2000, p. 75-78Conference paper (Refereed)
  • 157.
    Gebara, E
    et al.
    Fasta tillståndets elektronik.
    Rorsman, N
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Zirath, H
    Eklund, Klas-Håkan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Power Characteristics of High Voltage LDMOS Transistors2000In: Proceedings of the IEEE European Microwave Conference, 2000Conference paper (Refereed)
  • 158. Gordh, T
    et al.
    Rawal, N
    Ström, S
    Hök, Bertil
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Respiratory monitoring during postoperative analgesia1995In: J Clin Monit, Vol. 11, p. 365-372Article in journal (Refereed)
  • 159.
    Granath, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegard, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The effect of NaF on Cu(In, Ga)Se-2 thin film solar cells2000In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, ISSN 0927-0248, Vol. 60, no 3, p. 279-293Article in journal (Refereed)
    Abstract [en]

    This work investigates NaF, on Mo coated sodium barrier glass, as a sodium precursor for the growth of Cu(In, Ga)Se-2 for thin him solar cells. These precursor layers are investigated by X-ray photoelectron spectroscopy (XPS) before and after annealing, a

  • 160.
    Granath, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rockett, Angus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Mechanical issues of Mo back contacts for Cu(In,Ga)Se2 devices1995In: Proc of the 13th European Photovoltaic Solar Energy Conf, Nice, H.S. Stephens & Associates, Bedford, 1995, p. 1983-Conference paper (Refereed)
  • 161.
    Granath, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rockett, Angus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schroeder, D J
    Sodium in Sputtered Mo Back Contacts for Cu(In,Ga)Se2 Devices: Incorporation, Diffusion and Relationship to Oxygen1997In: The 14th European Photovoltaic Solar Energy Conf. 1278, Barcelona Spain, 1997Conference paper (Refereed)
  • 162.
    Gunningberg, Per
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Mathematics and Computer Science, Department of Information Technology, Computer Systems.
    Grönroos, Roland
    Uppsala University, Disciplinary Domain of Science and Technology, Mathematics and Computer Science, Department of Information Technology.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Voigt, Thiemo
    SICS.
    Ahlén, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signal Processing.
    Hjort, Klas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Micro Structural Technology.
    Rydberg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Signal Processing.
    WISENET Wireless Sensor Networks VINN Excellence Center2007Other (Other academic)
    Abstract [en]

    This broschure was produced for the inauguration of WISENET December 7, 2007. It decribes the future impact of WISENET, application areas and the 10 partners. The three research areas "Node Integration & Energy", "Networkning & Security" and "Wireless Communication" is briefly described as well as the application projects in "Water Sensing" and "Transport".

  • 163.
    Gustavsson, Lars-Erik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bardos, Ladislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Properties of TiN Films Produced in Hollow Cathode and Microwave ECR Hybrid Plasma System2005In: E-MRS Spring Meeting, Strasbourg, May-June 2005, Paper K-VII.3., 2005Conference paper (Other scientific)
  • 164.
    Gustavsson, Lars-Erik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bardos, Ladislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    PVD of Films on Ferromagnetic Substrates in Magnetized Plasma Systems2005In: Paper E-8, Proceedings of the 48th Annual Tech. Conf. of the Society of Vacuum Coaters (SVC), Denver, April 2005, 2005, p. p. 27-30Conference paper (Other scientific)
  • 165.
    Gåhlin, Rickard
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Bjorkman, Henrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Rangsten, Pelle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jacobson, Staffan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Designed abrasive diamond surfaces1999In: WEAR, ISSN 0043-1648, Vol. 235, p. 387-394Article in journal (Refereed)
    Abstract [en]

    With the aim to explore their abrasive and grinding properties, flat diamond surfaces with protruding pyramidal abrasive tips have been designed and manufactured. The manufacturing process is a replica technique based on hot filament chemical Vapour depos

  • 166.
    Hagman, Björn
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Richard, Åse
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Hedlund, Christer
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Anodic bonding of materials with large difference in thermal expansion2000In: MME'00 (Micro Mechanics Europe), October 1-3, Uppsala, Sweden, 2000Conference paper (Refereed)
  • 167.
    Hallen, Anders
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Ion Physics. Electronics. Jonfysik.
    Keskitalo, Niklas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Ion Physics. Electronics. Fasta tillståndets elektronik.
    Masszi, Ference
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Ion Physics. Electronics. Fasta tillståndets elektronik.
    Nagl, V
    Lifetime in proton irradiated silicon1996In: JOURNAL OF APPLIED PHYSICS, Vol. 79, no 8, p. 3906-3914Article in journal (Refereed)
    Abstract [en]

    Deep energy levels caused by high-energy low-dose proton irradiation of both n- and p-type silicon have been investigated. Energy positions in the band gap, capture coefficients, and their temperature dependences for majority and minority carrier capture

  • 168.
    Hedlund, Christer
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl-21997In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 15, no 3, p. 686-691Article in journal (Refereed)
    Abstract [en]

    The angular dependence of the etch rate in reactive ion etching (RIE) and inductively coupled plasma (ICP) systems for polysilicon etching with SF6 and Cl-2 is determined using a recently developed direct measurement method. The latter utilizes specially

  • 169.
    Hedlund, Christer
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Angular dependence of the polysilicon etch rate during dry etching in SF6 and Cl21997In: The 43rd International Symposium of the American Vacuum Society, Philadelphia PA, USA, 1997Conference paper (Refereed)
  • 170.
    Hedlund, Christer
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Blom, Hans-Olof
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    A method for the determination of the angular dependence during dry etching1995In: The American Vacuum Society, 42nd National Symposium, Minneapolis, USA, Oct, 1995Conference paper (Refereed)
  • 171.
    Hedlund, Christer
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Blom, Hans-Olof
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    A Method for the Determination of the Angular Dependence during Dry Etching1996In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 14, no 5, p. 3239-Article in journal (Refereed)
  • 172.
    Heinle, Ulrich
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Analysis of the Specific On-Resistance of Vertical High-Voltage DMOSFETs on SOI2003In: IEEE Transactions on Electron Devices, Vol. 50, no 5, p. 1416-1419Article in journal (Refereed)
  • 173.
    Heinle, Ulrich
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    High Voltage Devices on SOI2001In: Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France, 2001Conference paper (Refereed)
  • 174.
    Heinle, Ulrich
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Integration of high voltage devices on thick SOI substrates for automotive applications2001In: Solid-State Electronics, Vol. 45, p. 629-632Article in journal (Refereed)
  • 175.
    Heinle, Ulrich
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bengtsson, S
    Johansson, E
    Integration of high voltage devices on thick SOI substrates for automotive application2000In: Proceedings of the EUROSOI’2000, Oct. 25-27, Granada, Spain, 2000Conference paper (Refereed)
  • 176.
    Heinle, Ulrich
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Pinardi, K
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Vertical High Voltage Devices on Thick SOI with Back-End Trench Formation2002In: Proc of the 32nd ESSDERC’2002, pp. 295-298, 2002Conference paper (Refereed)
  • 177. Hertz, H M
    et al.
    Malmqvist, L
    Rosengren, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Ljungberg, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Optically trapped non-linear particles as probes for scanning near-field optical microscope1995In: Ultramicroscopy, Vol. 57, p. 309-312Article in journal (Refereed)
  • 178. Heyns, M
    et al.
    Beck, S
    Bender, H
    Blomme, P
    Boullart, W
    Brijs, B
    Carter, R
    Caymax, M
    Clues, M
    Conard, T
    De Gendt, S
    Degraeve, R
    Delabie, A
    Deweerdt, W
    Groeseneken, G
    Henson, K
    Kauerauf, T
    Kubicck, S
    Lucci, L
    Lujan, G
    Mentens, J
    Pantisano, L
    Petry, J
    Richard, O
    Rohr, E
    Schram, T
    Vandervvorst, W
    van Doome, P
    van Eishocht, S
    Wetslinder, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Witters, T
    Zhao, C
    Carter, E
    Chen, J
    Cosnier, V
    Green, M
    Jang, S E
    Kaushik, V
    Kerber, A
    Kluth, J
    Lin, S
    Tsai, W
    Young, E
    Manabe, Y
    Shimamoto, Y
    Bajolet, P
    de Witte, H
    Maes, J W
    Date, L
    Pique, D
    Coenergrachts, B
    Vertommen, J
    Passefort, S
    Scaling of high-k dielectrics towards sub-Inm EOT2003In: Proceedings of International Symposium on VLSI Technology, Systems, and Applications, 2003, p. 247-250Conference paper (Refereed)
  • 179.
    Hultqvist, Adam
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Platzer-Björkman, Charlotte
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Zimmermann, Uwe
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Edoff, Marika
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Törndahl, Tobias
    Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Growth kinetics, properties, performance and stability of ALD Zn-Sn-O buffer layers for Cu(In,Ga)Se2 solar cellsManuscript (preprint) (Other academic)
    Abstract [en]

    A new ALD process is developed for deposition of Zn-Sn-O buffer layers for Cu(In,Ga)Se2 solar cells with tetrakis(dimethylamino) tin, Sn(N(CH3)2)4, diethyl zinc, Zn(C5H5)2 and water, H2O. The new process gives excellent control of thickness and [Sn]/([Sn]+[Zn]) ratio of the films. The Zn-Sn-O films are amorphous as found by grazing incidence x-ray diffraction, have a high resistivity, show a low density compared to ZnO and SnOx and have a transmittance loss that is smeared out over a wide wavelength interval. Good solar cell performance is achieved for [Sn]/([Sn]+[Zn]) ratios determined to be 0.15 – 0.21 by Rutherford backscattering. The champion solar cell with a Zn-Sn-O buffer layer has an efficiency of 15.3 % (Voc = 653 mV, Jsc(QE) = 31.8 mA/cm2 and FF = 73.8 %)  compared to 15.1 % (Voc = 663 mV, Jsc(QE) = 30.1 mA/cm2 and FF = 75.8 %) of the best reference solar cell with a CdS buffer layer. There is a strong lightsoaking effect that saturates after a few minutes for solar cells with Zn-Sn-O buffer layers after storage in the dark. Stability was tested by 1000 h of dry heat storage in darkness at 85 °C, where Zn-Sn-O buffer layers with a thickness of 76 nm, did retain their initial value after a few minutes of light soaking.

  • 180.
    Hök, Bertil
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Acoustic sensors for respiratory air flow - from basic principles to clinical evaluation and industrialization1996In: Proc IEEE - EMBS, Amsterdam Oct 31 - Nov 3, 1996, Abstract M5-1, 1996Conference paper (Refereed)
  • 181.
    Hök, Bertil
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blückert, A
    Sandberg, G
    A non-contacting sensor system for respiratory air flow detection1996In: Sensors & Actuators, Vol. A52, p. 81-85Article in journal (Refereed)
  • 182. Igalson, M
    et al.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Recombination centers in the Cu(In,Ga)Se2-based photovoltaic devices2003In: J Phys Chem Solids, Vol. 64, p. 2041-2045Article in journal (Refereed)
  • 183. Igalson, M
    et al.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cells2003In: Solar Energy Materials and Solar Cells, Vol. 80, no 2, p. 195-207Article in journal (Refereed)
  • 184. Igalson, M
    et al.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jasenek, A
    The ”defected layer” and the mechanism of the interface-related metastable behavior in the ZnO/CdS/Cu(In,Ga)Se2 devices2003In: Thin Solid Films, Vol. 431-432, p. 153-157Article in journal (Refereed)
  • 185. Igalson, M
    et al.
    Cwil, M
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Persistent Capture and Release of Electrons in CIGSe Solar Cells2005In: Conf Proc of the 20th EUPVSEC (European Photovoltaic Solar Energy Conference, 2005Conference paper (Other scientific)
  • 186. Igalson, M
    et al.
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Compensating donors in Cu(In,Ga)Se2 absorbers of solar cells2005In: Thin Solid Films, Vol. 480-481, p. 322-326Article in journal (Refereed)
  • 187. Igalson, M
    et al.
    Kubiaczyk, A
    Zabierowski, P
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Electrical characterization of ZnO/CdS/Cu(In,Ga)Se2 devices with controlled sodium content2001In: Thin Solid Films, Vol. 387, p. 225-227Article in journal (Refereed)
  • 188. Igalson, M
    et al.
    Platzer Björkman, Charlotte
    Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    The influence of buffer layer on the transient behaviour of thin film chalcopyrite devices2004In: Solar Energy Materials and Solar Cells, ISSN 0927-0248, Vol. 84, no 1-4, p. 93-103Article in journal (Refereed)
  • 189. Igalson, M
    et al.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    DLTS spectra of thin film photovoltaic devices based on Cu(In,Ga)21997In: The 14th European Photovoltaic Conf. 2153, 1997Conference paper (Refereed)
  • 190. Ignatova, V A
    et al.
    Chakarov, L R
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Non-thermodynamic approach to including bombardment-induced post-cascade redistribution of point defects in dynamic Monte Carlo code2003In: Nuclear Instruments and Methods in Physics Research, Vol. B 202, p. 24-30Article in journal (Refereed)
  • 191. Ignatova, V A
    et al.
    Watjen, V
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chakarov, I R
    Comparison of dynamic simulations with RBS measurements of low energy ion implatation of Sb+ into SiO2/Si substrates2004In: Microchimica Acta, Vol. 145, p. 67-74Article in journal (Refereed)
  • 192. Ignatova, V
    et al.
    Karpuzov, D
    Chakarov, I
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Computer simulations of surface analysis using ion beams2006In: Progress in Surface Science, Vol. 81, no 6-7Article in journal (Refereed)
  • 193.
    Iriarte, Gonzalo Fuentes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Surface acoustic wave propagation characteristics of aluminum nitride thin films grown on polycrystalline diamond2003In: J Appl Phys, Vol. 93, no 12, p. 9604-9609Article in journal (Refereed)
  • 194.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bjurström, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Westlinder, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, I lia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Synthesis of C-AxisOriented AlN Thin Films on Metal Layers: Al, Mo, Ti, TiN and Ni2003In: International Conference on Ultrasonics, Ferroelectrics and Frequency Control, Proceedings 1, 2003, p. 311-315Conference paper (Refereed)
  • 195.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Room temperature synthesis of c-axis oriented AlN thin piezoelectric films2001In: Presented at the AVS 2001, 2001Conference paper (Refereed)
  • 196.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics.
    Plessky, V
    Yantchev, Ventsislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics.
    SAW COM-Parameter Extraction in AlN/Diamond Layered Structures2003In: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, ISSN 0885-3010, Vol. 50, no 11, p. 1542-1547Article in journal (Refereed)
  • 197.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia V
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Reactive Sputter Deposition of Highly Oriented AlN Films at Room Temperature2002In: J Mat Res, Vol. 17, no 6, p. 1469-1475Article in journal (Refereed)
  • 198.
    Iriarte, Gonzalo Fuentes
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Ottosson, Mikael
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. oorganisk kemi.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The Influence of the Deposition Parameters on the Stress of Magnetron Sputter Deposited AlN Thin Films on Si (100) Substrates2003In: Journal of Materials Research, Vol. 18, no 2, p. 423-Article in journal (Refereed)
  • 199.
    Isberg, Mats
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Per
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Physical models in device simulation of SI power pindiodes for optimal fitting of simulation results to measured data1997In: Compel, Vol. 16, no 3, p. 144-156Article in journal (Refereed)
  • 200. Ivanov, T
    et al.
    Volland, B E
    Rangelow, I W
    Persaud, A
    Ivanova, K
    Sarov, Y
    Dontzov, B D
    Gotszalk, T
    Smidt, B
    Zier, M
    Nikolov, N
    Kostic, I
    Sulzbach, T
    Mielczarski, J
    Kolb, S
    Djakov, S
    Edinger, K
    Fortagne, O
    Blom, Hans-Olof
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Almansa, A
    Piezoresistive Self-Actuated Cantilever Arrays for Nanotechnological Application2006Conference paper (Refereed)
1234567 151 - 200 of 488
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