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  • 201. Jain, P
    et al.
    Bhagwat, V
    Rymaszewski, E J
    Lu, T M
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Model relating process variables to film electrical properties for reactively sputtered tantalum oxide thin films2003In: J Appl Phys, Vol. 93, p. 3596-3604Article in journal (Refereed)
  • 202.
    Jonsson, Kerstin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik / ÅSTC.
    Köhler, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik / ÅSTC.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. ÅSTC.
    Oxygen plasma wafer bonding evaluated by the weibull fracture probability method2000In: Proc of the Eleventh Micromechanics Europe Workshop, Oct, Uppsala, Sweden, 2000Conference paper (Refereed)
  • 203.
    Jonsson, Kerstin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Köhler, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Oxygen Plasma Wafer Bonding Evaluated by the Weibull Fracture Probability Method2001In: Journal of Micromechanics and Microengineering, Vol. 11, no 4, p. 364-370Article in journal (Refereed)
  • 204.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Du, Jing
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Smith, Ulf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Patterning of Reactively Sputteres Tantalum Pentoxide, a High Epsilon Material, by Plasma Etching1998In: The American Vacuum Society 45th National Symposium in Baltimore, 1998Conference paper (Refereed)
  • 205.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barklund, Anna
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Controlled topography production - True 3D simulation and experiment1995In: Vacuum, Vol. 46, p. 971-975Article in journal (Refereed)
  • 206.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Compositional variations of sputter deposited Ti/W barrier layers on substrates with pronounced surface topography1999In: THIN SOLID FILMS, ISSN 0040-6090, Vol. 348, no 1-2, p. 227-232Article in journal (Refereed)
    Abstract [en]

    Sputter deposited Ti/W barrier layers have been found to be Ti deficient with respect to the target composition, which is attributed to the preferential resputtering of Ti from the deposited films by energetic neutrals or ions from the discharge. On the o

  • 207.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Larsson, T
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Characterization and optimization of a dry etching process for silicon nitride spacer formation1997In: The 44th international symposium of the American Vacuum Society, San José, USA, 1997Conference paper (Refereed)
  • 208.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Dynamic simulations of pulsed reactive sputtering processes2000In: J Vac Sci Technol, Vol. A18, no 2, p. 503-508Article in journal (Refereed)
  • 209.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Target compound layer formation during reactive sputtering1999In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 17, no 4, p. 1827-1831Article in journal (Refereed)
    Abstract [en]

    It is well known that a compound layer may form at the target surface during reactive sputtering. However, the significance of this layer for the response to a change in target conditions has so far not been carefully investigated. The standard model for

  • 210.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Target Compound Layer Formation during Reactive Sputtering1998In: Presented at AVS 45th National Symposium in Baltimore, Maryland, USA, November 2-6, 1998Conference paper (Refereed)
  • 211.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Frequency response in pulsed DC reactive sputtering processes2000In: Thin Solid Films, Vol. 365, p. 43-48Article in journal (Refereed)
  • 212.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A new self aligned asymmetric lateral bipolar transistor1996In: The 17th Nordic Semiconductor Meeting, Norway, June, 1996Conference paper (Refereed)
  • 213.
    Jonsson, Lars
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Westlinder, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Engelmark, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Du, Jing
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Smith, Ulf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Patterning of tantalum pentoxide, a high epsilon material, by inductively coupled plasma etching2000In: J Vac Sci Technol, Vol. B18, no 4, p. 1906-1910Article in journal (Refereed)
  • 214.
    Jonsson, Per
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bleichner, Henry
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Isberg, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nordlander, Edvard
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The ambipolar Auger coefficient: Measured temperature dependeble in electron irradiated and highly injected n-type silicon1997In: J Appl Phys, Vol. 81, no 5, p. 2256-2262Article in journal (Refereed)
  • 215.
    Jönsson, Mats
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Aldaeus, F
    Johansson, L E
    Lindberg, Ulf
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Hamp, S
    Jonsson, G
    Roeraade, J
    Bäcklund, Ylva
    A Study of Biological Particles in Bio-MEMS Devices using Dielectrophoresis2004In: Micro Structure Workshop, 29-31 March, Ystad, Sweden, 2004Conference paper (Other academic)
  • 216.
    Jönsson, Mats
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Nanotechnology and Functional Materials.
    Welch, Ken
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Nanotechnology and Functional Materials.
    Hamp, Sven
    Strömme, Maria
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Nanotechnology and Functional Materials.
    Bacteria counting with impedance spectroscopy in a micro probe station2006In: Journal of physical chemistry B, ISSN 1520-6106, Vol. 110, no 20, p. 10165-10169Article in journal (Refereed)
    Abstract [en]

    A method to quantify the density of viable biological cells in suspensions is presented. The method is implemented by low-frequency impedance spectroscopy and based on the finding that immobilized ions are released to move freely in the surrounding suspension when viable Escherichia coli cells are killed by a heat shock. The presented results show that an amount of ions corresponding to 2 × 108 unit charges are released per viable bacterium killed. A micro probe station with coplanar Ti electrodes was electrically characterized and used as a measuring unit for the impedance spectroscopy recordings. This unit is compatible with common microfabrication techniques and should enable the presented method to be employed using a flow-cell device for viable bacteria counting in miniaturized on-line monitoring systems.

  • 217.
    Kappertz, Oliver
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Advanced Process Modelling of the Rotating Magnetron2006Conference paper (Refereed)
  • 218.
    Kappertz, Oliver
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kubart, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Severin, Daniel
    Wüttig, Mattias
    Ion Implantation Effects in Reactive Sputter Deposition2005In: Presented at the 14th Int. Conf. on Surface Modification of Materials by Ion Beams (SMMIB’05) in Kusadasi, Turkey, 4-9 September, 2005Conference paper (Other scientific)
  • 219.
    Kappertz, Oliver
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rosén, Daniel
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Influence of rotating magnets on hysteresis in reactive sputtering2004In: Society of Vacuum Coaters, 7th Annual Technical Conference Proceedings, April, 2004Conference paper (Other scientific)
  • 220.
    Kappertz, Oliver
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rosén, Daniel
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A Simplified Treatment of Target Implantation Effects in Reactive Sputtering2004In: The International Conference on Metallurgical Coatings and Thin Films in San Diego, USA, 2004Conference paper (Refereed)
  • 221.
    Keränen, J
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. ANALYTICAL MATERIAL PHYSICS.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets fysik.
    Barnard, J
    Sterner, Jan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Matthes, Th W
    Olsson, E
    Effect of Sulfurization on the Microstructure of Chalcopyrite Thin Film Absorbers2001In: Thin Solid Films, Vol. 387, p. 80-82Article in journal (Refereed)
  • 222.
    Keskitalo, Niklas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Anders, Hallén
    Lalita, J
    Svensson, B G
    Lattice Disorder Effects on the Vacancy-Oxygen Centre in Ion-Radiated Silicon1997In: Mat. Res. Soc. Symp. 469, 1997, p. 233-238Conference paper (Refereed)
  • 223.
    Keskitalo, Niklas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hallen, A
    Josyula, L
    Svensson, BG
    Improved lifetime characteristics in heavy ion irradiated silicon1997In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, ISSN 0168-583X, Vol. 127, p. 410-413Article in journal (Refereed)
    Abstract [en]

    Silicon samples of various doping concentrations have been irradiated with MeV ions at low doses and different temperatures. Deep level transient spectroscopy (DLTS) has been used to characterise the distributions and productions of the divacancy center (

  • 224.
    Keskitalo, Niklas
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Hallen, A
    Masszi, Ference
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Simulation of forward bias injection in proton irradiated silicon pn-junctions1996In: Solid-State Electronics, ISSN 0038-1101, Vol. 39, no 7, p. 1087-1092Article in journal (Refereed)
    Abstract [en]

    A multilevel recombination model is implemented in the simulation program MEDICI to simulate proton irradiated silicon. First the model is used to simulate charge carrier distributions in proton irradiated silicon p(+)n-diodes in order to evaluate deep le

  • 225.
    Keskitalo, Niklas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Per
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nordgren, Kenneth
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bleichner, Henry
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nordlander, Edvard
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Temperature and injection dependence of the Shockley-Read-Hall lifetime in electron-irradiated p-type silicon1998In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 83, no 8, p. 4206-4212Article in journal (Refereed)
    Abstract [en]

    The Shockley-Read-Hall (SRH) carrier lifetime in electron-irradiated low-doped p-type silicon was measured at different injection levels and various temperatures. The lifetime under high-level injection was determined using the open-circuit carrier decay

  • 226.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Baseline Cu(In,Ga)Se2 Device Production: Control and Statistical Significance1999In: 11th International Photovoltaic Science and Engineering Conference, Sapporo, Japan, September 20-24, 1999Conference paper (Refereed)
  • 227.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Baseline Cu(In,Ga)Se2 Device Production: Control and Statistical Significance2001In: Solar Energy Materials & Solar Cells, Vol. 67, p. 67-76Article in journal (Refereed)
  • 228.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Cu(In,Ga)Se2 devices: From cells to minimodules2000In: E-MRS, Strasbourgh, May 30 – June 2, 2000Conference paper (Refereed)
  • 229.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    New world record Cu(In,Ga)Se2 based minimodule: 16.6%2000In: Sixteenth European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, May 1-5, 2000Conference paper (Refereed)
  • 230.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chityuttakan, C
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Growth of Cu(In,Ga)Se2 films using a Cu-poor/rich/poor sequence: substrate temperature effects2003In: Thin Solid Films, Vol. 431-432, p. 1-5Article in journal (Refereed)
  • 231.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chityuttakan, Chanwit
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Mikrostrukturlaboratoriet.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Cu(In,Ga)Se2 thin films grown with a Cu-poor/rich/poor sequence: Growth model and structural considerations2003In: Progress in Photovoltaics: Research and Applications, Vol. 11, p. 319-331Article in journal (Refereed)
  • 232.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chityuttakan, Chanwit
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Growth of Cu(In,Ga)Se2 Films Using a Cu-poor/rich/poor Sequence: Substrate Temperature Effects2002In: Proc. E-MRS, June 2002, Strasbourg, France, 2002Conference paper (Refereed)
  • 233.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lundberg, Olle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Optimization of RF-sputtered ZnO/ZnO:Al for Cu(In,Ga)Se2 based devices2000In: Proc 16th EPVSEC, Glasgow, May, 2000, p. 775-778Conference paper (Refereed)
  • 234.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Schöldström, Jens
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Analysis of CIGS Films and Devices Resulting from Different Cu-rich to Cu-poor Transitions2001In: Proc. 17th European Photovoltaic Solar Energy Conference, Munich, Oct, 2001Conference paper (Refereed)
  • 235.
    Kessler, John
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Highly efficient Cu(In,Ga)Se2 mini-modules2003In: Solar energy Materials & Solar Cells, Vol. 75, p. 35-46Article in journal (Refereed)
  • 236.
    Klintberg, Lena
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Ribbing, Carolina
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Ekwall, P
    Johansson, E
    Axén, N
    Nitride titanium alloys for mechanical implants1997In: 13th European Conf on Biomaterials, 1997Conference paper (Refereed)
  • 237.
    Kratz, Henrik
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Karlsson, Mikael
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Materialvetenskap. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Eriksson, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Stenmark, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Transmitter and receiver modules with integrated thermal control for spacecraft2003Conference paper (Refereed)
  • 238.
    Kratz, Henrik
    et al.
    ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Karlsson, Mikael
    Materialvetenskap. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Stenmark, Lars
    ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    A Transceiver with Integrated Thermal Control for Spacecraft2002In: MEMSWAVE Heraklion 26th-28th June 2002, 2002Conference paper (Other (popular science, discussion, etc.))
  • 239.
    Kratz, Henrik
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. ÅSTC.
    Öjefors, Erik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. ÅSTC.
    Vital parts for RF microsystems under development for nanospacecraft at the Ångström Space Technology Centre (ÅSTC)2004In: Proceedings of MEMSWAVE, 2004.: The Ångström Laboratory, Uppsala, Sweden, 30 June-2 July, 2004, 2004Conference paper (Other scientific)
  • 240. Krc, J.
    et al.
    Cernivec, G.
    Campa, A.
    Malmström, Jonas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Edoff, Marika
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Smole, F.
    Topic, M.
    Optical and electrical modeling of Cu(In,Ga)Se-2 solar cells2006In: Optical and quantum electronics, ISSN 0306-8919, E-ISSN 1572-817X, Vol. 38, no 12-14, p. 1115-1123Article in journal (Refereed)
    Abstract [en]

    In this work numerical modeling of Cu(In,Ga)Se-2 (CIGS) thin-film solar cells is presented. The main features of the optical simulator SunShine and the electrical simulator Aspin that are used for solar cell analysis are demonstrated. Modeling of light scattering at rough interfaces in the solar cell structures is described. The two descriptive scattering parameters that are used in optical simulations are the haze parameter and the angular distribution function of scattered light. The results of optical and electrical simulations of a thin CIGS solar cell with an absorber layer thickness of 360 nm are presented. The calculated external parameters of the solar cell are verified with the experimental data.

  • 241. Krc, J
    et al.
    Malmström, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Smole, F
    Topic, M
    Determination of Light Scattering Properties of Cu(In,Ga)Se2 Films for Solar Cells2005In: Cof Proc of the 20th EUPVSEC (European Photovoltaic Solar Energy Conference), 2005, p. 1831-1834Conference paper (Other scientific)
  • 242.
    Kubart, Tomas
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Dynamic behaviour of the reactive sputtering process2006In: Thin Solid Films, Vol. 515, p. 421-424Article in journal (Refereed)
  • 243.
    Kubart, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Dynamic Behaviour of the Reactive Sputtering Process2005In: Presented at 13th International Congress on Thin Films 8th International Conference on Atomically Controlled Surfaces, Interfaces & Nanostructures (ICTF13/ACSIN8) in Stockholm, Sweden, 19-23 June 2005, 2005Conference paper (Other scientific)
  • 244.
    Kubart, Tomas
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Dynamic Modelling of Reactive Magnetron Sputtering2006Conference paper (Refereed)
  • 245.
    Kubart, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Experimental Studies of the Dynamic Behavior of the Reactive Sputtering Process2005In: Presented at the 5th Asian-European Int. Conf. on Plasma Surface Engineering (AEPSE 2005) in Qingdao City, China, 12-16 September, 2005Conference paper (Other scientific)
  • 246.
    Kylner, Angela
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Effect of impurities in the CdS buffer layer on the performance of the Cu(In,Ga)Se-2 thin film solar cell1999In: JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, Vol. 85, no 9, p. 6858-6865Article in journal (Refereed)
    Abstract [en]

    The highest efficiencies of Cu(In, Ga)Se-2 (CIGS) thin film solar cells have been achieved when incorporating a thin CdS buffer layer grown by chemical bath deposition (CBD). The reason for this success has recently been discussed in terms of a pure Cd-do

  • 247.
    Kylner, Angela
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The chemical bath deposited CdS/Cu(In,Ga)Se-2 interface as revealed by X-ray photoelectron spectroscopy1999In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 146, no 5, p. 1816-1823Article in journal (Refereed)
    Abstract [en]

    The highest efficiencies of Cu(In,Ga)Se-2 thin-film solar cells have been achieved when incorporating a CdS buffer layer grown by chemical bath deposition (CBD). To elucidate the specific properties of the CBD-CdS/Cu(In,Ga)Se-2 interface, device-quality C

  • 248.
    Kylner, Angela
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lindgren, J
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Impurities in chemical bath deposited CdS films for Cu(In,Ga)Se-2 solar cells and their stability1996In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 143, no 8, p. 2662-2669Article in journal (Refereed)
    Abstract [en]

    The highest efficiencies for Cu(In,Ga)Se-2-based thin dim solar cells have been achieved with CdS films prepared by a solution growth method known as the chemical bath deposition (CBD) technique. The impurity content in such cadmium sulfide films has bee

  • 249.
    Kylner, Angela
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Niemi, Esko
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Chemical bath deposited CdS films with different impurity concentrations - Film characterization and Cu(In,Ga)Se2 solar cell results1997In: 14th European Photovoltaic Solar Energy Conf. 1326, 1997Conference paper (Refereed)
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    Kylner, Angela
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rockett, Angus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Oxygen in Solution Grown Cds Films for Thin Film Solar Cells1996In: Solid State Phenomena, Vol. 51-52, p. 533-540Article in journal (Refereed)
2345678 201 - 250 of 488
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