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  • 251.
    Kylner, Angela
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wirde, M
    A high-resolution X-ray photoelectron spectroscopy study of1997In: Jap J Appl Phys, Vol. 36, no 4A part 1, p. 2167-2175Article in journal (Refereed)
  • 252.
    Köhler, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Stenmark, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Backe, T
    Muhkerjee, S
    Cold Gas thrusters Micromachined in silicon - Design plan1997In: 2nd Round Table on Micro-Nano Technologies for space, ESTEC, Noordwijk NL, 1997Conference paper (Refereed)
  • 253.
    Köhler, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndest elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndest elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Stenmark, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Bakke, T
    Mukherjee, S
    Cold gas thrusters micromachined in silicon and design plan1997In: ESTEC, Noordwijk, The Netherlands, Oct 15-17, 1997Conference paper (Refereed)
  • 254.
    Köhler, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Eriksson, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Micropropulsion systems for future space missions2002In: Power MEMS, Tsukuba, Japan, 2002, p. 144-147Conference paper (Refereed)
  • 255.
    Köhler, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik / ÅSTC.
    Jonsson, Kerstin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik / ÅSTC.
    Bruhn, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Marchand, L
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Mechanical reliability of silicon microsystem fusion bonds in spaceflight environment2001In: Paper no: IAF-01-1.5.05, 52nd International Astronautical Congress, 1-5 Oct, Toulouse France, 2001Conference paper (Refereed)
  • 256.
    Köhler, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik / ÅSTC.
    Jonsson, Kerstin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik / ÅSTC.
    Greek, Staffan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. ÅSTC.
    Weibull fracture probability for silicon wafer bond evaluation2000In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 147, no 12, p. 4683-4687Article in journal (Refereed)
    Abstract [en]

    This work presents a strategy toward determining the mechanical reliability of bonded silicon microsystems. The fracture strength of a bond has been examined using burst tests and Weibull statistics. The testing method in itself exhibits small errors, is

  • 257.
    Köhler, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Jonsson, Kerstin
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Greek, Staffan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Materialvetenskap. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Stenmark, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Weibull fracture probability for silicon wafer bond evaluation1999In: 5th International Symposium Semicond. Wafer Bonding, Honolulu, 1999Conference paper (Refereed)
  • 258.
    Köhler, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Jonsson, Kerstin
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Jönsson, Mats
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Stenmark, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Materials Science.
    Space qualification of direct bonded silicon microsystems1999In: Micro Nano Technology for Space Applications, Pasadena, Calif., USA, 1999Conference paper (Refereed)
  • 259.
    Köhler, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. ÅSTC.
    Marchand, L
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. ÅSTC.
    Quality assurance in complex microsystem development2003In: 4th Round Table on Micro/Nano Technology for Space, ESTEC, Noordwijk, The Netherlands 2003, 2003, p. 276-286Conference paper (Refereed)
  • 260.
    Köhler, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics and Materials Science, Materials Science. Technology, Department of Engineering Sciences, Electronics. ÅSTC.
    Nguyen, Hugo
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics and Materials Science, Materials Science. Technology, Department of Engineering Sciences, Electronics. ÅSTC.
    Bejhed, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics and Materials Science, Materials Science. Technology, Department of Engineering Sciences, Electronics. ÅSTC.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics and Materials Science, Materials Science. Technology, Department of Engineering Sciences, Electronics. ÅSTC.
    Thornell, Greger
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Physics, Department of Physics and Materials Science, Materials Science. Technology, Department of Engineering Sciences, Electronics. Materialvetenskap.
    Microsystems Interfaces - need and example solutions2005In: 5th Round Table on Micro/Nano Technologies for Space, Oct 3-5, Noordwijk NL, 2005Conference paper (Refereed)
  • 261.
    Köhler, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Simu, Urban
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
    Bejhed, Johan
    Chemistry, Department of Materials Chemistry. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Kratz, Henrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Jonsson, Kerstin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Nguyen, Hugo
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Bruhn, Fredrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Lindberg, Ulf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Hjort, Klas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    A hybrid cold gas microthruster system for spacecraft2001In: Digest of Papers for the 11th Int Conf on Solid-State Sensors and Actuators - Transducers '01 and Eurosensors XV, Munich, Germany, June 10-14, 2001, p. 886-889Conference paper (Refereed)
  • 262.
    Köhler, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik / ÅSTC.
    Simu, Urban
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Materialvetenskap.
    Jonsson, Kerstin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik / ÅSTC.
    Lang, M
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Feasibility demonstration of the micropropulsion cold gas thruster system2000In: Proc 3rd Round Table on Micro/Nano-Technologies for Space May 2000, 2000, p. 219-225Conference paper (Refereed)
  • 263.
    Köhler, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. ÅSTC.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. ÅSTC.
    Microsystems in space2002In: The 7th Internationel Conference on Commercialization of Micro and Nano systems, Ypsilanti, Michigan, 2002, p. 129-132Conference paper (Refereed)
  • 264.
    Köhler, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Vallin, Örjan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Hedlund, Christer
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Silicon fusion bond interfaces resilient to wet anisotropic etchants2000In: Micromechanics Europe 2000, Uppsala, 2000, p. 142-145Conference paper (Refereed)
  • 265.
    Köhler, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Vallin, Örjan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Hedlund, Christer
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Silicon fusion bond interfaces resilient to wet anisotropic etchants2001In: Journal of Micromechanics and Microengineering, Vol. 11, p. 359-363Article in journal (Refereed)
  • 266.
    Köhler, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Vallin, Örjan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Hedlund, Christer
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Etching through Si-Si direct bonded interfaces1997In: MME´97, 1997Conference paper (Refereed)
  • 267.
    Köhler, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. ÅSTC. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Wallin, Örjan
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strandman, Carola
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Hedlund, Christer
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Fasta tillståndets elektronik. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Etching through Si-Si direct bonded interfaces1997In: MME' 97, 1997Conference paper (Refereed)
  • 268. Lalita, J
    et al.
    Pellegrino, L
    Hallén, A
    Svensson, B G
    Keskitalo, Niklas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Fatima, S
    Rapid migration of defects in ion-implanted silicon1997In: Mat Res Soc Symp Proc Vol 469, 1997, p. 239-244Conference paper (Refereed)
  • 269.
    Larsson, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics.
    Westlinder, Jörgen
    Department of Materials Science. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Department of Materials Science. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Department of Materials Science. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Substitutional Effects of the Dielectric Constant in Ta2O52001In: Presented at AVS, Oct, 2001Conference paper (Refereed)
  • 270. Laurell, T
    et al.
    Drott, J
    Rosengren, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Silicon wafer integrated enzyme reactors1995In: Biosensors & Bioelectronics, Vol. 10, p. 289-299Article in journal (Refereed)
  • 271. Laurell, Tomas
    et al.
    Drott, J
    Rosengren, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lindström, K
    Enhanced enzyme activity in silicon integrated enzyme reactors utilizing porous silicon as the copuling matrix1996In: Sensors & Actuators, Vol. B31, p. 161-166Article in journal (Refereed)
  • 272.
    Lindberg, Peter
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Signal Processing. Signals and systems.
    Öjefors, Erik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Signal Processing. Signals and systems.
    Rydberg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Signal Processing. Signals and systems.
    A SiGe 24 GHz monolithically integrated direct conversion receiver2005In: GigaHertz 2005 Conference Proceedings, 2005Conference paper (Refereed)
  • 273.
    Ljungberg, Karin
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bäcklund, Ylva
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Bergh, M
    Andersson, M O
    Bengtsson, Stefan
    The effects of HF-cleaning prior to silicon wafer bonding1995In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 142, no 4, p. 1297-1303Article in journal (Refereed)
  • 274.
    Ljungberg, Karin
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jansson, U
    Bengtsson, S
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Modification of silicon surfaces with H2SO4:H2O2:HF and HNO3:HF for wafer bonding applications1996In: JOURNAL OF THE ELECTROCHEMICAL SOCIETY, ISSN 0013-4651, Vol. 143, no 5, p. 1709-1714Article in journal (Refereed)
    Abstract [en]

    Two combinations of oxidizing and etching agents, H2SO4:H2O2:HF and HNO3:HF, have been used to modify silicon surfaces prior to wafer bonding. The chemical oxide thickness can be adjusted between 0 and 10 Angstrom by tuning the HF content of the mixtures

  • 275.
    Ljungberg, Karin
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Jansson, Ulf
    Department of Engineering Sciences, Electronics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. oorganisk kemi.
    Improved Direct Bonding of Si- and SiO2 surfaces by Cleaning in H2SO4:H2O2:HF1995In: Appl. Phys. Lett, ISSN 0003-6951, Vol. 67, no 5, p. 650-652Article in journal (Refereed)
    Abstract [en]

    A method for silicon surface preparation prior to wafer bonding in presented. By cleaning thp wafers in a H2SO4:H2O2 mixture in which a small amount of HF is added, and then rinsing in H2O, the bonding behavior of the surfaces is improved, compared to ot

  • 276. Lloyd Spetz, A
    et al.
    Nakagomi, S
    Wingbrant, H
    Andersson, M
    Salomonsson, A
    Roy, S
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Eickhoff, M
    Uvdal, K
    Yakimova, R
    New materials for chemical and biosensors2006In: Materials and Manufactoring Processes, Vol. 21, no 3, p. 253-256Article in journal (Refereed)
  • 277.
    Lu, Jun
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets fysik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Solid State Physics. Electronics. Fasta tillståndets elektronik.
    Olson, E
    The Influence of Na on the Microstructure of Cu(InxGa1-x)Se2 Based Solar Cell Thin Films2001In: 52nd annual meeting of the Scandinavian Society for Electron Microscopy, Stockholm 12-15 June 2001,Book of Abstracts : Abstract No P87, 2001, p. 184-185Conference paper (Refereed)
  • 278. Lujan, G S
    et al.
    Schram, T
    Sjöblom, Gustaf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Witters, T
    Kubicek, S
    De Gendt, S
    De Meyer, K
    Interface passivation mechanisms in metal gated oxide capacitors2004In: Proc of the 34th ESSDERC, 2004Conference paper (Other scientific)
  • 279.
    Lundberg, Olle
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Malmström, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Influence of the Cu(In,Ga)Se2 Thickness and Ga Grading on Solar Cell Performance2003In: Progress in Photovoltaics: Science and Applications, Vol. 11, p. 77-88Article in journal (Refereed)
  • 280.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    High efficiency thin film solar cells with low In content due to thin Cu(In,Ga)Se2 and Ga grading2000In: Sixteenth European Photovoltaic Solar Energy Conference and Exhibition, Glasgow, May 1-5, 2000Conference paper (Refereed)
  • 281.
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rapid growth of thin Cu(In,Ga)Se2 layers for solar cells2003In: Thin Solid Films, Vol. 431-432, p. 26-30Article in journal (Refereed)
  • 282.
    Lundberg, Olle
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rapid Growth of Thin Cu(In,Ga)Se2 Layers for Solar Cells2002In: Proc. E-MRS, June 2002, Strasbourg, France, 2002Conference paper (Refereed)
  • 283.
    Lundberg, Olle
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edoff, Marika Edoff
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Optimized growth conditions for Cu(In,Ga)Se2 layers by co-evaporation at high deposition rates2003In: Material Research Conference, Spring 2003, San Francisco, USA, 2003Conference paper (Refereed)
  • 284.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The effect of Ga-grading in CIGS thin film solar cells2005In: Thin Solid Films, Vol. 480-481, p. 520-525Article in journal (Refereed)
  • 285.
    Lundberg, Olle
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets fysik.
    Rockett, Angus
    Edoff, M
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells2002In: Proceedings of the International Conference on Ternary and Multinary Compounds, Paris, France, October, 2002Conference paper (Refereed)
  • 286.
    Lundberg, Olle
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    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Analytisk materialfysik.
    Rockett, Angus
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Diffusion of indium and gallium in Cu(In,Ga)Se2 thin film solar cells2003In: Journal of physics and chemistry of solids, Vol. 64, p. 1499-1504Article in journal (Refereed)
  • 287. Macak, K
    et al.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Macak, P
    Olsson, M K
    Helmersson, U
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Modeling of the deposition of stoichiometric Al2O3 using nonarcing direct current magnetron sputtering1998In: J Vac Sci Technol A, Vol. 16, no 3, p. 1286-1292Article in journal (Refereed)
  • 288.
    Malm, Ulf
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The Stability in Damp Heat Conditions of Thin-film CIGS Solar Cells with Different Absorber Thickness2004In: 19th European Photovoltaic Energy Conference, 7-11 June, Paris, France, 2004, p. 1890-1893Conference paper (Other scientific)
  • 289.
    Malm, Ulf
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Long term stability in Cu(In,Ga)Se2 Solar cells with different buffer materials2005In: Conference proceedings: 20th EUPVSEC (European Photovoltaic Solar Energy Conference), Barcelona, Spain, June 2005, 2005Conference paper (Other scientific)
  • 290.
    Malmström, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edoff, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Relation between composition and optical properties of CdS films grown by chemical bath deposition2004In: Proceedings 19th European Photovoltaic Solar Energy Conference (WIP-Münich, Münich, Vol II, 2004, p. 1909-1912Conference paper (Other scientific)
  • 291.
    Malmström, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lundberg, Olle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Potential for light trapping in Cu(In,Ga)Se2 solar cells2003In: Proceedings 3rd World Conference on Photovoltaic Energy Conversion (WCPEC-3 Organizing Committee, Osaka, 2003) Vol I, 2003, p. 344-347Conference paper (Refereed)
  • 292.
    Malmström, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bodegård, Marika
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Influence of Ga on the Current Transport in Cu(In,Ga)Se2 Thin Film Solar Cells2001In: Proceedings 17th European Photovoltaic Solar Energy Conference (WIP-Renewable Energies, Munich, 2001) Vol II, 2001, p. 1265-1268Conference paper (Refereed)
  • 293.
    Malmström, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A study of the influence of the Ga content on the long-term stability of Cu(In,Ga)Se2 thin film solar cells2003In: Thin Solid Films, Vol. 431-432, p. 436-442Article in journal (Refereed)
  • 294.
    Malmström, Jonas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A Study of the Influence of the Ga Content on the Long-Term Stability of Cu(In,Ga)Se2 Thin Film Solar Cells2002In: Proc. E-MRS, June, Strasbourg, France, 2002Conference paper (Refereed)
  • 295.
    Martin, David
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Enlund, Johannes
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jensen, Jens
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Ion Physics. Jonfysik.
    Compositional characterization of high-k dielectric material via XPS and ToF-ERDA2006Conference paper (Other (popular science, discussion, etc.))
  • 296.
    Martin, David
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Yantchev, Ventsislav
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Buried electrode electroacoustic technology for the fabrication of thin film based resonant components2006In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 16, no 9, p. 1869-1874Article in journal (Refereed)
    Abstract [en]

    A fabrication process for thin film electroacoustic devices utilizing buriedelectrodes is presented. A one-step lithography process has been developedto bury electrodes resulting in a planarized surface. The proposedtechnology is expected to bring about a number of benefits concerning theperformance of a variety of thin film electroacoustic devices. With respectto thin film plate acoustic resonators (FPAR), burying the reflectorelectrodes results in improved reflectivity and potentially lowersusceptibility to acousto-migration effects. It is also shown that employingthe proposed technology for the fabrication of both thin film bulk acousticresonators (FBAR) and thin film solidity mounted bulk acoustic resonators(SBAR) eliminates certain macro-structural defects in the piezoelectric filmwhich is a prerequisite for substantially improved device performance andhigher power handling capability. The buried electrode electroacoustic (EA)technology is demonstrated for a thin aluminium nitride (AlN) piezoelectricfilm with electrodes of both molybdenum (Mo) and tungsten (W). The latterhave been primarily chosen because of their high electroacoustic materialquality. Thin film resonant structures produced by this technology arecharacterized and their features are discussed.

  • 297.
    Martin, David
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics.
    Yantchev, Ventsislav
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics.
    Thin Film Electro-Acoustic Devices Utilising Buried Electrodes2005In: Proc. 2005 Gigahertz Symp., Uppsala, Sweden, October 2005, 2005Conference paper (Other academic)
  • 298. Martin, P J
    et al.
    Bendavid, A
    Wielunski, L S
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Preferential Sputtering Effects in the Deposition of TiAl Films by Filtered Cathodic Arc Deposition1997In: Nucl Instr Phys Res B, Vol. 129, p. 207-209Article in journal (Refereed)
    Abstract [en]

    By means of X-ray Photoelectron Spectroscopy (XPS) we show the existence of a carbon-nitrogen (CN) impurity in chemical bath deposited (CBD) CdS thin films grown on Cu(In,Ga)Se-2. The very broad nitrogen N(1s) feature (ca. 3eV) indicated a high degree of

  • 299. Martin, R M
    et al.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Sawkar, M
    Chang, J P
    Ion Enchanced Plasma Etching of Metal Oxides in Chlorine Based Plasma2005In: Presented at American Vacuum Society 52nd National Symposium 2005 in Boston, USA, 2005Conference paper (Other scientific)
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    et al.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Optoelectronic image of polycrystalline thin film solar cells based on CuInSe2 and CuInGaSe2 by the laser beam scan1998In: Intern. Conf. "Physics at the Turn of the 21st Century",St Petersburg, Russia, Sept. 28- Oct. 2, Summaries C20p, 1998, p. 98-Conference paper (Refereed)
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