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  • 301.
    Medvedkin, G A
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Optoelectronic images of polycrystalline thin-film solar cells based on CuInSe2 and CuInGaSe2 obtained by laser scanning1999In: SEMICONDUCTORS, ISSN 1063-7826, Vol. 33, no 9, p. 1037-1039Article in journal (Refereed)
    Abstract [en]

    The laser scanning technique was used to obtain two- and three-dimensional optoelectronic images of polycrystalline solar cells based on thin films of CuInSe2 and CuInGaSe2. Topograms obtained with the aid of the laser-beam-induced current reveal microreg

  • 302. Medvedkin, G A
    et al.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Laser beam induced current characterization of high efficiency chalcopyrite solar cells1999In: SOLID STATE PHENOMENA, ISSN 1012-0394, Vol. 67-8, p. 69-74Article in journal (Refereed)
    Abstract [en]

    Laser Beam Induced Current (LBIC) techniques has been employed to investigate hidden microdefects and longitudinal non-uniformities over the illuminated surface of CIS and CIGS thin-film solar cells. By the laser scan the obtained two-dimensional and thre

  • 303. Medvedkin, G A
    et al.
    Wennerberg, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Laser beam induced current characterization of high efficiency CIS and CIGS solar cells1998In: Intern. Conf. "POLYSE'98", Schwabish Gmund, Germany 13-18 September, Polycrystalline Semiconductors V - Bulk Materials, Thin Films and Devices in Series "Solid State Phenomena" vol.67-68, Scitech Publ., 1998, p. 69-74Conference paper (Refereed)
  • 304. Melles, E
    et al.
    Andersson, Henrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Wallinder, D
    Shafgat, J
    Bergman, T
    Aastrup, T
    Jörnvall, H
    Electroimmobilization of proinsulin C-peptide to a quartz crystal microbalance sensor chip for protein affinity purification2005In: Anal Biochem, Vol. 341, no 1, p. 89-93Article in journal (Refereed)
  • 305.
    Niemi, Esko
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hedström, Jonas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Martinsson, Torbjörn
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Skarp, J
    Hariskos, D
    Ruckh, M
    Sckock, H W
    Small- and large-area CIGS modules by coevaporation1996In: Proceedings of the 25th IEEE Photovoltaic Specialists Conference, Washington DC, USA, 1996, p. 801-Conference paper (Refereed)
  • 306.
    Nilsson, Peter
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Jönsson, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Chip mounting and interconnection in multi chip modules for space applications2000In: Proc MME`00 Oct, Uppsala, Sweden, 2000Conference paper (Refereed)
  • 307.
    Nilsson, Peter
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Jönsson, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Chip mounting and interconnection in multi-chip modules for space applications2001In: Journal of Micromechanics and Microengineering, Vol. 14, no 4, p. 339-Article in journal (Refereed)
  • 308.
    Norde, Herman
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Ionized dopant concentrations in silicon - an analytical approach1995In: Solid-State Electronics, Vol. 38, no 12, p. 2059-2061Article in journal (Refereed)
  • 309. Norling, M
    et al.
    Enlund, Johannes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Gevorgian, S
    A 2 GHz oscillator based on a solidly mounted thin film bulk acoustic wave resonator2005In: Proc of the IEEE MMT-S, International microwave symposium, 2005Conference paper (Other scientific)
  • 310. Nuttinck, S
    et al.
    Gebara, E
    Laskar, J
    Rorsman, N
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Zirath, H
    Eklund, Klas-Håkan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Harris, M
    Comparison Between Si-LDMOS and GaN-Based Microwave Power Transistors2002In: Proc of IEEE Lester Eastman Conference on High Performance Devices, 2002, p. 149-154Conference paper (Refereed)
  • 311.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Eliminating the hysteresis effect for reactive sputtering processes2005In: Appl Phys Lett, Vol. 86, no 1Article in journal (Refereed)
  • 312.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Reactive Sputtering – Experiments and Modelling2005In: Invited to Sweden-China Symposium on Materials Science in Beijing, China, 10-13 May, 2005Conference paper (Other scientific)
  • 313.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stable Reactive Sputtering Processes2003In: ISSP 2003, The 7th International Symposium on Sputtering & Plasma Processes, June 11-13, Kanazawa, Japan, 2003, p. 235-239Conference paper (Refereed)
  • 314.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets elektronik.
    Heszler, Peter
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Fasta tillståndets fysik.
    Carlsson, Jan-Otto
    Department of Engineering Sciences, Electronics. Solid State Physics. Chemistry, Department of Materials Chemistry, Inorganic Chemistry.
    Diamond deposition from halogenated methane precursors on Si and SiC substrates1997In: Diamond and Related Materials, Vol. 6, no 1, p. 85-88Article in journal (Refereed)
    Abstract [en]

    Diamond films have been grown on Si and SiC substrates using the hot filament method and CF4, CCl2F2 and CCl4 as carbon precursor gases. It has been shown that the quality of the diamond films grown on Si substrates gets worse when the fluorine concentra

  • 315.
    Nyberg, Tomas
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kubart, Tomas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Severin, D
    Wüttig, M
    State of the art in Reactive Magnetron Sputtering2006In: Invited to The third Mikkeli International Industrial Coating Seminar, MIICS 2006, Mikkeli, Finland, March 16-18, 2006 and Conference Proceedings, 2006Conference paper (Refereed)
  • 316.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rosén, Daniel
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kubart, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Severin, Daniel
    Pflug, Andreas
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Modelling of Sputter Erosion Rate Enchancement from Ceramic Targets2005In: Proc of the 48th Annual Society of Vacuum Coaters Technical Conference in Denver, USA, 2005, p. 298-301Conference paper (Other scientific)
  • 317.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rosén, Daniel
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kubart, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Severin, Daniel
    Pflug, Andreas
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Modelling of Sputter Erosion Rate Enhancement from Ceramic Targets2004In: Proceedings of Society of Vacuum Coaters, 2004, p. 324.328-Conference paper (Refereed)
  • 318.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Composition control by current modulation in dc-reactive sputtering1998In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. A16, no 3, p. 1868-1872Article in journal (Refereed)
    Abstract [en]

    Control of the reactive sputtering process can be carried out by controlling either the flow of the reactive gas or the power supplied to the target. In the flow control mode it is well known that the reactive sputter deposition process exhibits a pronoun

  • 319.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hogberg, H
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The influence of the deposition angle on the composition of reactively sputtered thin films1997In: SURFACE & COATINGS TECHNOLOGY, ISSN 0257-8972, Vol. 94-5, no 1-3, p. 242-246Article in journal (Other scientific)
    Abstract [en]

    We have performed computer simulations and experimental studies of the compositional behaviour of reactively sputter-deposited films as a function of the deposition angle. The composition of deposited films is essentially determined by the supply rate of

  • 320.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Fasta tillståndets elektronik.
    Skytt, P
    Physics, Department of Physics. Department of Engineering Sciences, Electronics. Solid State Physics.
    Gålnander, Björn
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Fasta tillståndets fysik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Fasta tillståndets elektronik.
    Nordgren, Joseph
    Physics, Department of Physics. Department of Engineering Sciences, Electronics. Solid State Physics.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Solid State Physics. Fasta tillståndets elektronik.
    In situ diagnostic studies of reactive co-sputtering from two targets by means of soft x-ray and optical emission spectroscopy1997In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 15, no 1, p. 145-148Article in journal (Refereed)
    Abstract [en]

    Fabrication of electronic and optical devices involves synthesis of tailor-made materials with complex composition. Reactive co-sputtering from two targets is a suitable process for fabrication of, e.g., a two-element nitride compound material. The compos

  • 321.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Skytt, P
    Physics, Department of Physics. Department of Engineering Sciences, Electronics.
    Gålnander, Björn
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets fysik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nordgren, Joseph
    Physics, Department of Physics. Department of Engineering Sciences, Electronics.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Studies of reactive sputtering of multi-phase chromium nitride1997In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 15, no 2, p. 248-252Article in journal (Refereed)
    Abstract [en]

    We have presented a model for reactive sputter deposition of two-phase materials. This model has been applied to reactive sputtering of chromium nitride where it is assumed that either Cr2N or CrN is formed. In order to test the validity of the model, a n

  • 322.
    Nyberg, Tomas
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Sproul, W D
    Carter, K L
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stable reactive sputtering using 2 reactive gases2003In: ICMCTF 2003, The International Conference on Metallurgical Coatings and Thin Films April 28 - May 2, San Diego, USA, 2003Conference paper (Refereed)
  • 323.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    High-Voltage SOI Devices for Automotive Applications2004In: Proc of NATO Advanced Research Workshop on SOI, Kiev, Russia, 25-29 April. Invited, 2004Conference paper (Other scientific)
  • 324.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    High-Voltage SOI Devices for Automotive Applications2005In: Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment, Kluwer Academic Publishers, The Netherlands , 2005, p. 155-166Chapter in book (Other scientific)
  • 325.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Self-heating effects in SOI bipolar transistors2001In: Microelectronic Engineering, Vol. 56, p. 339-352Article in journal (Refereed)
  • 326.
    Olsson, Jörgen
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Masszi, Ference
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Keskitalo, Niklas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Tiensuu, Stefan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Eklund, Klas-Håkan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A New High Voltage DMOS Transistor for Microwave Applications1996In: The 17th Nordic Semicondustor Meeting, Norway, June, 1996Conference paper (Refereed)
  • 327.
    Olsson, Jörgen
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Edholm, Bengt
    Fasta tillståndets elektronik.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bohlin, Kjell
    High Current Gain Hybrid Lateral Bipolar Operation of DMOS Transistors1995In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 42, no 9, p. 1628-1635Article in journal (Refereed)
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    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Söderbärg, Anders
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    McGinnis, S
    Yehoda, J
    Electrical characterisation of silicon pn-junctions terminated with diamond1996In: Diamond and Related Materials, Vol. 5, p. 1457-1461Article in journal (Refereed)
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    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Tiensuu, Stefan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    McGinnis, S
    Electrical Properties of the Silicon/Diamond Interface1996In: Presented at the 17th Nordic Semiconductor Meeting, Norway, June, 1996Conference paper (Refereed)
  • 330. Palmskog, G
    et al.
    Arvidsson, G
    Eriksen, P
    Gustafsson, G
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    Hammar, J
    Henriksson, P
    Ribbing, Carolina
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Low-cost Single-mode Optical Passive Coupler Devices with an MT-interface Based on Polymeric Waveguides in BCB1997In: Proc ECIO´97, The 8th European Conference on Integrated Optics and Technical Exhibition, Opt. Soc. America, Washington DC, USA, 1997, p. 291-294Conference paper (Refereed)
  • 331.
    Pasquariello, Donato
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hjort, Klas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Damages in oxygen plasma bonding1999In: The 5th Int Symp Semicind Wafer Bond, 196th Electrochem Soc Meeting, Honolulu, Hawaii Abstract no 1001, 1999Conference paper (Refereed)
  • 332.
    Pasquariello, Donato
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hjort, Klas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Oxidation and induced damages in oxygen plasma in situ wafer bonding2000In: J Electrochem Soc, Vol. 147, no 7, p. 2699-2703Article in journal (Refereed)
  • 333.
    Pasquariello, Donato
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Lindeberg, Mikael
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Hedlund, Christer
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hjort, Klas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding2000In: Sensors & Actuators, Vol. A82, p. 239-244Article in journal (Refereed)
  • 334. Pei, Z
    et al.
    Aastrup, T
    Andersson, Henrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Ramström, O
    Redox-Responsive and Calcium-Dependent Switching of Glycosyldisulfide Interactions with Concanavalin A2005In: Bioorg Med Chem Lett, Vol. 15, no 11, p. 2707-2710Article in journal (Refereed)
  • 335. Pei, Z
    et al.
    Andersson, Henrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Aastrup, T
    Ramström, O
    Study of real-time lectin-carbohydrate interactions on the surface of a quartz crystal microbalance2005In: Biosensors & Bioelectronics, Vol. 21, p. 60-66Article in journal (Refereed)
  • 336. Persson, Clas
    et al.
    Platzer-Björkman, Charlotte
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Malmström, Jonas
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Törndahl, Tobias
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Edoff, Marika
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Strong valence-band offset bowing of ZnO1-xSx enhances p-type nitrogen doping of ZnO-like alloys2006In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 97, no 14, p. 146403-Article in journal (Refereed)
    Abstract [en]

    Photoelectron spectroscopy, optical characterization, and density functional calculations of ZnO1-xSx reveal that the valence-band (VB) offset E-v(x) increases strongly for small S content, whereas the conduction-band edge E-c(x) increases only weakly. This is explained as the formation of local ZnS-like bonds in the ZnO host, which mainly affects the VB edge and thereby narrows the energy gap: E-g(x=0.28)approximate to E-g(ZnO)-0.6 eV. The low-energy absorption tail is a direct Gamma(v)->Gamma(c) transition from ZnS-like VB. The VB bowing can be utilized to enhance p-type N-O doping with lower formation energy Delta H-f and shallower acceptor state in the ZnO-like alloys.

  • 337. Pflug, A
    et al.
    Szyszka, B
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Heuristic model of the plasma impedance in reactive magnetron sputtering2004In: 5th International Conference on Coatings on Glass, Saarbrücken, Germany, July, 2004Conference paper (Other scientific)
  • 338. Pflug, Andreas
    et al.
    Siemers, M
    Szyszka, B
    Kappertz, Oliver
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Severin, Daniel
    Wuttig, M
    Modelling of the Plasma Impedance in Reactive Magnetron Sputtering for Various Traget Materials2005In: Proceedings of the 48th Annual Society of Vacuum Coaters Technical Conference in Denver, April 23-28, 2005, p. 298-301Conference paper (Other scientific)
  • 339. Pflug, Andreas
    et al.
    Sittinger, V
    Scyszka, B
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kappertz, Oliver
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Advances in Heuristic and Monte-Carlo Simulation of Reactive Sputtering and Technical Application2004In: Invited to the Symposium on Reactive Sputter Processes and Related Phenomena III, Ghent, Belgium, December 9-10, 2004Conference paper (Refereed)
  • 340. Pinardi, K
    et al.
    Heinle, Ulrich
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bengstsson, S
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Colinge, J-P
    Electrothermal Simulations of High-Power SOI Vertical DMOS Transistors with Lateral Drain Contacts under Unclamped Inductive Switching Test2004In: Solid-State Electronics, Vol. 48, no 7, p. 1119-1126Article in journal (Refereed)
  • 341. Pinardi, K
    et al.
    Heinle, Ulrich
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bengtsson, S
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Modelling of Self Heating Effects of High Power Novel Vertical DMOS Transistors2001In: The 19th Nordic Semiconductor Meeting, Copenhagen, Denmark, May, 2001Conference paper (Refereed)
  • 342. Pinardi, K
    et al.
    Heinle, Ulrich
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bengtsson, S
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Self Heating Effects of High Power DMOS Transistors2001In: Presented at the Franco-Swedish Workshop on SOI, March 8-9, Grenoble, France, 2001Conference paper (Refereed)
  • 343. Pinardi, K
    et al.
    Heinle, Ulrich
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bengtsson, S
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Self Heating Effects of High Power SOI Vertical DMOS Transistors with Lateral Drain Contacts2002In: Physica Scripta, Vol. T101, p. 38-41Article in journal (Refereed)
  • 344. Pinardi, K
    et al.
    Heinle, Ulrich
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bengtsson, S
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Colinge, J.-P.
    High-Power SOI Vertical DMOS Transistors with Lateral Drain Contacts: Process Development, Characterization and Modeling2004In: IEEE Transactions on Electron Devices, Vol. 51, no 5, p. 790-796Article in journal (Refereed)
  • 345. Pinardi, K
    et al.
    Heinle, Ulrich
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bengtsson, S
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Colinge, J-P
    Unclamped Inductive Switching Behaviour of High-Power SOI Vertical DMOS Transistor with Lateral Drain Contacts2002In: Solid-State Electronics, Vol. 46, no 12, p. 2105-2110Article in journal (Refereed)
  • 346.
    Platzer Björkman, Charlotte
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Analysis of Zn(O,S) films for Cu(In,Ga)Se2 solar cells2003In: Proceedings of the Estonian Academy of Sciences Physics Matematics 52(3) pp 299-307 (2003), 2003Conference paper (Refereed)
  • 347.
    Platzer Björkman, Charlotte
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Kessler, John
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Stolt, Lars
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Atomic Layer Deposition of Zn(O,S) buffer layers for high efficiency Cu(In,Ga)Se2 solar cells2003In: Proceedings of the 3rd World Conference on Photovoltaic Solar Energy Conversion, WCPEC-3, 1, Osaka, Japan, 2003, p. 461-464Conference paper (Refereed)
  • 348.
    Platzer Björkman, Charlotte
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Study of Zn(O,S) films for Cu(In,Ga)Se2 solar cells using a coupled XPS/UPS-ALD2002In: Proc. E-MRS, June 2002, Strasbourg, France, 2002Conference paper (Refereed)
  • 349.
    Platzer Björkman, Charlotte
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Analytisk materialfysik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Interface study of CuInSe2/ZnO and Cu(In,Ga)Se2/ZnO devices using ALD ZnO buffer layers2003In: Thin Solid FIlms, Vol. 431-432, p. 321-325Article in journal (Refereed)
  • 350.
    Platzer Björkman, Charlotte
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lu, Jun
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets fysik.
    Kessler, John
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Interface Study of CuInSe2/ZnO and Cu(In,Ga)Se2/ZnO Devices Using ALD ZnO Buffer Layers2002In: Proceedings of the Fifth Baltic Symposium on Atomic Layer Deposition, Tarttu, Estonia, October, 2002Conference paper (Refereed)
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