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  • 51.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hollow Cathode Based Plasma Sources and Applications2005In: Proceedings of the 15th Symp. on Applications and Plasma Processes and 3rd EU-Japan Joint Symp. on Plasma Processing (SAPP XV), Podbanské, Slovakia, January 2005, IL01, 2005, p. p. 19-22Conference paper (Other scientific)
  • 52.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hollow cathode PVD of nitride and oxide films at low substrate temperature2001In: Surf Coat Technol, Vol. 146-147, p. 463-468Article in journal (Refereed)
  • 53.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    New hybrid source with microwave and hollow cathode plasma2003In: 46th Annual Tech Conf of the Society of Vacuum Coaters (SVC), San Francisco, May, Paper E-8, Proc., 2003, p. 104-107Conference paper (Refereed)
  • 54.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    New microwave and hollow cathode hybrid plasma sources2003In: Int Conf Metal Coat Thin Films, ICMCTF´03, San Diego, April, 2003, p. Paper G1/TS1-1Conference paper (Refereed)
  • 55.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Processing in Afterglows and Decaying Plasmas2001In: Vacuum & Coating Technology, Vol. Sept, p. 46-56Article in journal (Refereed)
  • 56.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    PVD of hard films inside narrow holes and pipes2003In: The 46th Annual Tech Conf of the Society of Vacuum Coaters (SVC), San Francisco, May, Paper H-5, Proc., 2003, p. 154-154Conference paper (Refereed)
  • 57.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Radio frequency hollow cathode source for large area cold atmospheric plasma applications2000In: Surface and Coatings Technology, Vol. 133-134, p. 522-527Article in journal (Refereed)
  • 58.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    A new method for film deposition in the discharge of target metal vapour1995In: Surface and Coatings Technology, ISSN 0257-8972, Vol. 72, no 3, p. 174-180Article in journal (Refereed)
    Abstract [en]

    A new method for generation of a discharge in its own metal vapour of an r.f.-excited electrode is described. The method is based on the r.f. plasma jet (RPJ) system utilizing a small size r.f. nozzle in which a hollow cathode-type discharge is generated.

  • 59.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Linear arc discharge source for large area plasma processing1997In: Appl Phys Lett, Vol. 70, p. 577-579Article in journal (Refereed)
  • 60.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Microwave surfatron system for diamond film depositions1995In: International Symposium on Plasma Chemistry – ISPC 12, Minneapolis, USA, August 21-25, Paper no PK 1, 1995Conference paper (Refereed)
  • 61.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Microwave surfatron system for plasma processing1996In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 14, no 2, p. 474-477Article in journal (Refereed)
  • 62.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    PECVD by hollow cathodes1998In: Proceedings of the 41st Annual Tech.Conf. of the Society of Vacuum Coaters (SVC), Boston 1998, ISSN 0737-5921, Paper P-1, Proc., 1998, p. 315-320Conference paper (Refereed)
  • 63.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Thin film processing by the radio frequency hollow cathodes1997In: SURFACE & COATINGS TECHNOLOGY, ISSN 0257-8972, Vol. 97, no 1-3, p. 723-728Article in journal (Refereed)
    Abstract [en]

    The main features of the radio frequency (RF) hollow cathodes for thin film processing are summarized. The utilization of cylindrical RF hollow cathodes in both the plasma-enhanced chemical vapour deposition (PECVD) and the physical vapour deposition (PVD

  • 64.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Gustavsson, Lars-Erik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Effect of Substrate Material and Bias on Properties of TiN Films Deposited in the Hybrid Plasma Reactor2005In: AVS 52nd Int. Meeting, Boston, October-November 2005, Paper PS+TF-ThA7, 2005Conference paper (Other scientific)
  • 65.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Gustavsson, Lars-Erik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Teer, D G
    New microwave and hollow cathode hybrid plasma sources2004In: Surface and Coatings Technology, Vol. 177-178, p. 651-656Article in journal (Refereed)
  • 66.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lebedev, Y A
    Performance of Radio Frequency Hollow Cathodes at Low Gas Pressures2003In: Surf Coat Technol, Vol. 163-164, p. 654-658Article in journal (Refereed)
  • 67.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lebedev, Y A
    Performance of Radio Frequency Hollow Cathodes at Low Gas Pressures2002In: Int.Conf.Metall.Coat.&Thin Films - ICMCTF-02, April 2002, San Diego, 2002Conference paper (Refereed)
  • 68.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lebedev, Y A
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Berg, Sören
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Diamond deposition in a microwave electrode discharge at reduced pressures1997In: DIAMOND AND RELATED MATERIALS, ISSN 0925-9635, Vol. 6, no 2-4, p. 224-229Article in journal (Refereed)
    Abstract [en]

    Diamond deposition on healed Si-substrates was studied under microwave discharge generated by an electrode-antenna either in a ''point-to-plane'' arrangement or in a ''parallel-plane'' arrangement at gas pressures of 1-15 Torr in a mixture of hydrogen wit

  • 69.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Gustavsson, Lars-Erik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Effect of ferromagnetic substrates on the film growth in magnetized plasma systems2005In: Int. Conf. Metall. Coat.&Thin Films - ICMCTF-05, San Diego, May 2005, Paper G3-11., 2005Conference paper (Other scientific)
  • 70.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Gustavsson, Lars-Erik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Barankova, Hana
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Effect of ferromagnetic substrates on the film growth in magnetized plasma systems2005In: Surf Coat Techn, Vol. 200, p. 1862-1866Article in journal (Refereed)
  • 71.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lebedev, Y
    Features of a nonequilibrium microwave electrode discharge1998In: PLASMA PHYSICS REPORTS, ISSN 1063-780X, Vol. 24, no 10, p. 891-895Article in journal (Refereed)
    Abstract [en]

    The luminosity structure of a microwave discharge excited in hydrogen and hydrogen-methane mixtures (1-8% methane) between the rod electrode and the plane surface in a cylindrical metallic discharge chamber at a pressure of 1-15 torr and an input power of

  • 72.
    Bardos, Ladislav
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Lebedev, Y
    Spherical Microwave Electrode Discharge. Phenomenology and results of probe measurements1998In: Technical Physics, Vol. 43, no 12, p. 1428-Article in journal (Refereed)
  • 73.
    Bejhed, Johan
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    Lindberg, Ulf
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. Fasta tillståndets elektronik.
    Stenmark, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Physics, Department of Physics and Materials Science, Materials Science. ÅSTC.
    A miniturized Xenon Feed System for Electric Propulsion2002Conference paper (Refereed)
  • 74. Bengtsson, L
    et al.
    Angelov, I
    Zirath, H
    Olsson, Jörgen
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Materials Science. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    An empirical high frequency large signal model for high voltage LDMOS transistors1998In: Proceedings of the IEEE European Microwave Conference, Vol.1, 1998, p. 733-738Conference paper (Refereed)
  • 75.
    Bengtsson, Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Integration and Analysis of RF-Power LDMOS Transistors2006Licentiate thesis, monograph (Other scientific)
  • 76. Bengtsson, S
    et al.
    Bergh, M
    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    BESOI materials with diamond or aluminium as buried insulator1997In: DERA workshop on Novel Silicon-On-Insulator Materials and Applications, April 17-18, Malvern, UK, 1997Conference paper (Refereed)
  • 77. Bengtsson, S
    et al.
    Bergh, M
    Söderbärg, Anders
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Edholm, Bengt
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jauhiainen, A
    Integration of diamond and silicon for electronic materials1998In: the MRS fall meeting, Symposium D-Integration of Dissimilar Materials in Micro- and Optoelectronics, Boston, MA, USA, Dec, 1998Conference paper (Refereed)
  • 78. Berg, J
    et al.
    Bengtsson, S
    Olsson, Jörgen
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Simulation of SOI MOSFETs at GHz-frequencies2000In: Proceedings of the GHz2000 Symposium, pp. 399-402, Gothenburg March 13-14, Sweden, 2000Conference paper (Refereed)
  • 79.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Compositional changes during ion-assisted deposition of TixW1-x barrier layers on structured surfaces1995In: The 42nd international symposium of the American Vacuum Society, San José, USA, 1995Conference paper (Refereed)
  • 80.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Basic Understanding of the Pulsed DC Reactive Sputter Deposition Process1999In: Invited to Second Asian-European Int Conf on Plasma Surface Engineering (AEPSE´99), Beijing, September 15-19, 1999Conference paper (Refereed)
  • 81.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Preferential sputtering effects in thin film processing1999In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 17, no 4, p. 1916-1925Article in journal (Refereed)
    Abstract [en]

    Predicting the partial sputtering yield (sputtered atoms of one element/incident energetic ion) for different elements during sputtering from multielement targets:is not a straightforward task. It is commonly observed that ion bombardment of composite,tar

  • 82.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Resputtering effects during ion beam assisted deposition and the sputter yield amplification effect1996In: Surface & Coatings Technology, Vol. 84, p. 353-362Article in journal (Refereed)
  • 83.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Synergistic sputtering effects during ion bombardment with two ion species1995In: J Vac Sci Technol, Vol. A13, no 3, p. 831-833Article in journal (Refereed)
  • 84.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Modeling of Mass Transport and Gas Kinetics of the Reactive Sputtering Process1995In: Journal de Physique IV, Colloque C5, suppl au de Jorurnal de Physique II, 5, Vol. 5, p. C5/45-C5/54Article in journal (Refereed)
  • 85.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Basic Understanding of Reactive Sputtering Processes2003In: Invited to the AVS 50th National Symposium in Baltimore, Maryland, USA, November 2-7, 2003, 2003Conference paper (Refereed)
  • 86.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Fundamental understanding and modeling of reactive sputtering process2005In: Thin Solid Films, Vol. 476, no 2, p. 215-230Article in journal (Refereed)
  • 87.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Blom, Hans-Olof
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nender, Claes
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Computer modeling as a tool to predict deposition rate and film composition in the reactive sputtering process1998In: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, ISSN 0734-2101, Vol. 16, no 3, p. 1277-1285Article in journal (Refereed)
    Abstract [en]

    Reactive sputtering is a widely used technique to deposit oxides, nitrides, etc. A serious drawback of this technique, however, is the drastic decrease in deposition rate that almost always occurs when depositing compound films as compared to depositing p

  • 88.
    Berg, Sören
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyberg, Tomas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Katardjiev, Ilia
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Basic Understanding of the Pulsed DC Reactive Spitter Deposition Process2003In: The 4th Asian-European Int Conf on Plasma Surface Engineering, AEPSE 2003, Jeju City, South Korea, September 28-October 2, 2003, 2003Conference paper (Refereed)
  • 89. Bergh, M
    et al.
    Tiensuu, Stefan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Keskitalo, Niklas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Forsberg, Markus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Silicon surfaces for hydrophobic wafer bonding1997In: Proc of the Fourth International Symosium on Semiconductor Wafer Bonding: Science, Technology and Applications, Electrochemical Society Proceedings Vol 97-36,, 1997, p. 87-94Conference paper (Refereed)
  • 90. Bielby, R
    et al.
    Sanders, B
    Hebden, R
    Köhler, Johan
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Engineering Sciences, Electronics. ÅSTC.
    Baker, A
    Mistry, S
    Moerel, J-L
    Halswijk, W
    The development of a hydrogen peroxide monopropellant micropocket engine using MEMS technology2005In: 5th Round Table on Micro/Nano Technologies for Space, Oct 3-5, Noordwijk NL, 2005Conference paper (Refereed)
  • 91.
    Bjorkman, H
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. MATERIALS SCIENCE.
    Rangsten, Pelle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hjort, Klas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Diamond microstructures for optical micro electromechanical systems1999In: SENSORS AND ACTUATORS A-PHYSICAL, ISSN 0924-4247, Vol. 78, no 1, p. 41-47Article in journal (Refereed)
    Abstract [en]

    We have used hot filament chemical vapour deposition (HFCVD) to fabricate diamond microstructure components for optical micro electromechanical systems (MEMS). In order to demonstrate the wide application range for diamond technology we have made componen

  • 92.
    Bjorkman, H
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. MATERIALS SCIENCE.
    Rangsten, Pelle
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Hollman, Patrik
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Hjort, Klas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Physics, Department of Physics and Materials Science, Materials Science. Department of Engineering Sciences, Electronics. Materialvetenskap.
    Diamond replicas from microstructured silicon masters1999In: SENSORS AND ACTUATORS A-PHYSICAL, ISSN 0924-4247, Vol. 73, no 1-2, p. 24-29Article in journal (Refereed)
    Abstract [en]

    We are developing a microstructure technology for thick film diamond replicas, using deposition by hot filament chemical vapour deposition (CVD) on microstructured silicon. This technology is primarily intended to make micromechanical structures for micro

  • 93.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Lidbaum, Hans
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Experimental Physics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Leifer, Klaus
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Applied Materials Sciences.
    Synthesis of highly textured thin piezoelectric AlN films with a tilted c-axis2007Conference paper (Refereed)
  • 94.
    Bjurström, Johan
    et al.
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Solid State Electronics.
    Wingqvist, Gunilla
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Katardjiev, Ilia
    Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences. Uppsala University, Disciplinary Domain of Science and Technology, Technology, Department of Engineering Sciences, Electronics.
    Synthesis of textured thin piezoelectric AlN films with a nonzero c-axis mean tilt for the fabrication of shear mode resonators2005In: Proc Int IEEE Ultrason Symp, 2005Conference paper (Other academic)
  • 95. Björefors, F
    et al.
    Strandman, Carola
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Chemistry, Department of Physical and Analytical Chemistry, Analytical Chemistry. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nyholm, L
    Electrochemical detection based on redox cycling using interdigitated microarray electrodes at mu L/min flow rates2000In: ELECTROANALYSIS, ISSN 1040-0397, Vol. 12, no 4, p. 255-261Article in journal (Refereed)
    Abstract [en]

    The influence of convection on the degree of redox cycling at interdigitated microarray electrodes in a flow system was investigated in the end column detection mode for flow rates below 20 mu L/min. It was found that the degree of redox cycling increased

  • 96.
    Björklund, K.L
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. oorganisk kemi.
    Ribbing, Carolina
    Department of Materials Science. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Norde, Herman
    Department of Materials Science. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Boman, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry. Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Chemistry, Department of Materials Chemistry, Inorganic Chemistry. Technology, Department of Engineering Sciences, Electronics. oorganisk kemi.
    Containerless fabrication of tungsten single crystals using laser CVD for field emission applications2002In: Appl. Phys., Vol. A75, no 4, p. 493-496Article in journal (Refereed)
  • 97.
    Bleichner, Henry
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Jonsson, Per
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Keskitalo, Niklas
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nordlander, Edvard
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Temperature and injection dependence of the Shockley-Read-Hall lifetime in electron irradiated n-type silicon1996In: J Appl Phys, Vol. 79, no 12, p. 9142-9148Article in journal (Refereed)
  • 98.
    Bleichner, Henry
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Nordgren, Kenneth
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rosling, Mats
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Bakowski, M
    Nordlander, Edvard
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The effect of emitter shortings on turn-off limitations and device failure in GTO thyristors under snubberless operation1995In: IEEE Trans on Electron Devices, Vol. 42, no 1, p. 178-187Article in journal (Refereed)
  • 99.
    Bodegard, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Rockett, Angus
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    The behaviour of Na implanted into Mo thin films during annealing1999In: SOLAR ENERGY MATERIALS AND SOLAR CELLS, ISSN 0927-0248, Vol. 58, no 2, p. 199-208Article in journal (Refereed)
    Abstract [en]

    Na implants have been used to study diffusion of Na in rf diode sputtered Mo thin films used as back contacts for Cu(In,Ga)Se, solar cells. The samples were analysed with secondary ion mass spectrometry before and after vacuum anneals at 420 degrees C and

  • 100.
    Bodegård, Marika
    et al.
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Granath, Karin
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Stolt, Lars
    Uppsala University, Teknisk-naturvetenskapliga vetenskapsområdet, Technology, Department of Materials Science. Department of Engineering Sciences, Electronics. Fasta tillståndets elektronik.
    Growth of Cu(In,Ga)Se2 thin films by coevaporation using alkaline precursors2000In: Thin Solid Films, Vol. 361-362, p. 9-16Article in journal (Refereed)
1234567 51 - 100 of 488
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