[{"_id":"project:7371","_type":"project","abstract":{"sv":"Projektet handlar om nästa generation av kvantmaterial som kan ge oss nya spinnbaserade logiska komponenter som, tack vare sin “laddningsfria” egenskap, kommer vara 10-100 gånger mer effektiva än konventionella transistorer och utan värmeförluster. Detta kommer bidra till en ny era med lågeffektselektronik, med avgörande lösningar till energiutmaningar","en":"The power demand for electronics and IT industry will hit 40% of the global electricity consumption by 2030. This is due to the use of electric currents (streams of electrons) in logic switches in electronics. Electric current lead to heating. A majority of power is thus wasted and present technologies cannot solve this energy problem. A solution lies in the physics of electrons which also exhibit a spin angular momentum or ‘spin’.  The spin of an electron is responsible for magnetism in materials. It led to the hard disk technology, a gigantic expansion of data storage capacity enabling the IT revolution. In our project, we will use our recent discovery of high diffusive spin currents, with a new generation of quantum materials to realize novel spin logic switches that, due to their ‘charge-less’ property will be 10-100 more efficient than conventional transistors and with no waste heat. This will enable a new era of low-power electronics, giving key solutions to energy challenges.  "},"project_id":"P48698-1_Energi","identifier_short":"P48698-1","dates":{"start_date":"2020-01-01","end_date":"2024-12-31"},"organizations":[{"funding":[{"_id":107,"id":"202100-5000","sv":"Energimyndigheten","en":"Swedish Energy Agency"}]},{"coordinating":[{"_id":978,"id":"202100-2932","sv":"Uppsala universitet","en":"Uppsala University"}]}],"people":[{"project_leaders":[]},{"other_personnel":[]}],"tags":[{"_id":11590,"id":"20304","sv":"Energiteknik","en":"Energy Engineering"}],"titles":{"sv":"Avgörande innovationer för energieffektiva spinn-elektroniska logikkretsar","en":"Principal Innovations for energy efficient spin-electronic logic"},"total_funding":"1941692","type_of_awards":{"sv":"Projektbidrag","en":"Project grant"},"publications":[{"id":"diva2:1938241","type":"article-journal","status":"Published","issued":{"date-parts":[[2025]]},"title":"Extreme Current Density and Breakdown Mechanism in Graphene on Diamond Substrate","language":"eng","author":[{"family":"Belotcerkovtceva","given":"Daria","ORCID":"0000-0001-7541-9023","localId":"darbe471","affiliation":[{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]},{"family":"Datt","given":"Gopal","ORCID":"0000-0001-8463-9431","localId":"gopda880","affiliation":[{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]},{"family":"Nameirakpam","given":"Henry","ORCID":"0009-0008-6675-8603","localId":"henna342","affiliation":[{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]},{"family":"Aitkulova","given":"Aisuluu","ORCID":"0000-0002-2785-356X","localId":"aisai209","affiliation":[{"id":"883205","name":"Uppsala universitet, Elektricitetslära"}]},{"family":"Suntornwipat","given":"Nattakarn","ORCID":"0000-0002-8815-5992","localId":"natsu752","affiliation":[{"id":"883205","name":"Uppsala universitet, Elektricitetslära"}]},{"family":"Majdi","given":"Saman","ORCID":"0000-0002-6057-7931","localId":"samma947","affiliation":[{"id":"883205","name":"Uppsala universitet, Elektricitetslära"}]},{"family":"Isberg","given":"Jan","ORCID":"0000-0003-2197-5352","localId":"jaisb133","affiliation":[{"id":"883205","name":"Uppsala universitet, Elektricitetslära"}]},{"family":"Kamalakar","given":"M. Venkata","ORCID":"0000-0003-2385-9267","localId":"venmu994","affiliation":[{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]}],"abstract":"The high current-carrying capacity of graphene is essential for its use as an interconnect in electronic and spintronic circuits. At the same time, knowing the breakdown limits and mechanism under high fields can enable new device design strategies. In this work, we push the current carrying capacity of the scalable form of chemical vapor deposited (CVD) graphene employing a high-thermal conducting single crystalline diamond substrate. Our experiments on CVD graphene reveal extremely high current densities &gt; 10<sup>9</sup> A/cm<sup>2</sup> in graphene on the diamond with both ohmic (low-resistive) and tunneling tunnel (high-resistive) contacts. Measurements on ferromagnetic (TiO<sub>x</sub>/Co) and metallic (Ti/Au) contacts demonstrate current densities of ∼1.16×10<sup>9</sup> A/cm<sup>2</sup> and ∼1.7×10<sup>9</sup> A/cm<sup>2</sup>, respectively. The tunnel (high-resistive) contacts exhibit a shunting of graphene under high currents via the bottom graphitized diamond, resulting in dielectric breakdown and via alternative conducting paths. Electrical measurements show a distinct threshold for conducting paths of graphitized diamond, in tune accordance with Middleton-Wingreen's theory. Our results of high current densities achieved in CVD graphene, with distinct dependence on ohmic and tunneling, contact resistance, and the observed breakdown mechanism, provide new insights for enabling high-current all carbon circuits.","DOI":"10.1016/j.carbon.2025.120108","ScopusId":"2-s2.0-85218100128","NBN":"urn:nbn:se:uu:diva-550657","volume":"237","number":"120108","container-title":"Carbon","ISSN":"1873-3891","keyword":"CVD Graphene; diamond; high current carrying capacity; fractal pattern","publisher":"Elsevier","published":[{"raw":"2025-02-17T17:22:00.000+01:00"}],"created":[{"raw":"2025-02-17T17:22:46.032+01:00"}],"updated":[{"raw":"2025-11-20T08:00:11.959+01:00"}],"URL":"https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-550657"},{"id":"diva2:1851669","type":"article-journal","status":"Published","issued":{"date-parts":[[2024]]},"title":"High current treated-passivated graphene (CTPG) towards stable nanoelectronic and spintronic circuits","language":"eng","author":[{"family":"Belotcerkovtceva","given":"Daria","ORCID":"0000-0001-7541-9023","localId":"darbe471","affiliation":[{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]},{"family":"Nameirakpam","given":"Henry","ORCID":"0009-0008-6675-8603","localId":"henna342","affiliation":[{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]},{"family":"Datt","given":"Gopal","ORCID":"0000-0001-8463-9431","localId":"gopda880","affiliation":[{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]},{"family":"Noumbe","given":"Ulrich","localId":"ulrno497","affiliation":[{"name":"Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS), UMR 7504, 23 rue du Loess, Strasbourg 67034, France"},{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]},{"family":"Kamalakar","given":"M. Venkata","ORCID":"0000-0003-2385-9267","localId":"venmu994","affiliation":[{"id":"884655","name":"Uppsala universitet, Energimaterialens fysik"}]}],"abstract":"Achieving enhanced and stable electrical quality of scalable graphene is crucial for practical graphene device applications. Accordingly, encapsulation has emerged as an approach for improving electrical transport in graphene. In this study, we demonstrate high-current treatment of graphene passivated by AlOx nanofilms as a new means to enhance the electrical quality of graphene for its scalable utilization. Our experiments and electrical measurements on large-scale chemical vapor-deposited (CVD) graphene devices reveal that high-current treatment causes persistent and irreversible de-trapping density in both bare graphene and graphene covered by AlOx. Strikingly, despite possible interfacial defects in graphene covered with AlOx, the high-current treatment enhances its carrier mobility by up to 200% in contrast to bare graphene samples, where mobility decreases. Spatially resolved Raman spectroscopy mapping confirms that surface passivation by AlOx, followed by the current treatment, reduces the number of sp3 defects in graphene. These results suggest that for current treated-passivated graphene (CTPG), the high-current treatment considerably reduces charged impurity and trapped charge densities, thereby reducing Coulomb scattering while mitigating any electromigration of carbon atoms. Our study unveils CTPG as an innovative system for practical utilization in graphene nanoelectronic and spintronic integrated circuits.","DOI":"10.1039/d3nh00338h","ScopusId":"2-s2.0-85182721062","NBN":"urn:nbn:se:uu:diva-526688","issue":"3","volume":"9","page":"456-464","container-title":"Nanoscale Horizons","ISSN":"2055-6756","publisher":"Royal Society of Chemistry","published":[{"raw":"2024-04-15T14:52:00.000+02:00"}],"created":[{"raw":"2024-04-15T14:52:06.754+02:00"}],"updated":[{"raw":"2025-02-18T13:55:05.059+01:00"}],"URL":"https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-526688"}],"links":[{"type":"pid","link":"https://uu.diva-portal.org/smash/api/project/swecris/project:7371"}]}]