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Wide-gap, high-Ga (Ag,Cu)(In,Ga)Se₂ thin-film solar cells with a wide range of Ag contents are fabricated and characterized before and after dark storage, dark annealing at 85 degrees C, and light soaking. A 1:4 ratio of Ag to Cu enhances initial device performance significantly, with excess Ag enhancing carrier collection at the expense of open-circuit voltage and fill factor for close-stoichiometric devices. For off-stoichiometric devices, increased open-circuit voltages are offset by losses in carrier collection. Efficiency degradation after treatments is typically increased with additional Ag alloying. A second observation is a behavior threshold identified slightly below an Ag to Cu ratio of 1:1. For compositions below the threshold, the doping response to light soaking and dark annealing is similar to that exhibited by low-Ga Cu(In,Ga)Se₂. Above the threshold, light soaking reduces net doping and that dark annealing can even increase net doping. Furthermore, devices above the threshold exhibit a far greater doping responsivity than those below and display a strong dependence of initial performance and stability on group-I/group-III stoichiometry. A third observation is that all devices lose approximate to 1-2% (absolute) in efficiency after a 3 h light soak, indicating that this loss originates from the high-Ga content (1:3 In:Ga), rather than the Ag alloying.

This study evaluates In2O3:W as a transparent back contact material in wide-gap (bandgap range = 1.44–1.52 eV) (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells for potential application as a top cell in a tandem device. High silver concentrations and close-stoichiometric absorber compositions result in a complete depletion of free charge carriers, allowing for decent electron collection, despite the low diffusion length. Remarkable efficiencies of 13.6% and 7.5% are reached using 1 μm- and 400 nm-thick absorbers, respectively. At rear illumination (i.e., superstrate backwall), the best cell shows an efficiency of 8.7%. For each of the four analyzed samples, the short-circuit current at rear illumination reaches at least 60% of the value at front illumination. Losses arise from recombination at the back contact and a too low drift/diffusion length. The parasitic absorption by the transparent electrodes for photon energies close to the bandgap of a potential Si bottom cell (1.1 eV) is close to 15%. Strategies to reduce this value and to further increase the efficiency are discussed.

This contribution studies the effect of ordered vacancy compounds (OVCs) on the minority carrier collection in wide-gap (Ag,Cu)(In,Ga)Se2 (ACIGS) solar cells. For this purpose, three samples with different ([Ag]+[Cu])/([In]+[Ga]) (I/III) values were processed: 1) a very off-stoichiometric absorber (I/III = 0.31), consisting of isolated chalcopyrite patches embedded in a major OVC bulk phase, 2) a moderately off-stoichiometric absorber (I/III = 0.77) with OVC patches at the front and back interfaces and 3) a close-stoichiometric absorber (I/III = 0.94) with only very few, isolated OVC patches. For each of these samples, synchrotron-based X-ray fluorescence (XRF) was measured on a nanoscale (55 nm resolution), while simultaneously recording the X-ray beam induced current (XBIC). The results, complemented by transmission electron microscopy and electron-beam induced current analyses, clearly indicate that the presence of the OVC phase reduces the carrier collection and thus the short-circuit current density of off-stoichiometric wide-gap ACIGS solar cells.

This study reports on the influence of air annealing and Na incorporation into the absorber on the performance of Cu2ZnSnS4 (CZTS) bifacial solar cells with FTO and W/FTO back contacts. Na was incorporated by depositing similar to 12 nm thick NaF on the CZTS precursors prior to the sulfurization process via thermal evaporation. After sulfurization, some of the samples were annealed in air at 300 degrees C for 90 s and subsequently at 200 degrees C for 600 s. Transmission electron microscopy confirmed sulfurization of the W interlayer to form WS2 which improves the FTO ohmicity. Na incorporation improved grain size of the absorber as revealed by scanning electron microscopy. Non-annealed samples had the unwanted SnS2 phase while the air annealed samples, particularly those with both W interlayer and Na incorporation, were exempt from SnS2 phase, as was confirmed through grazing incident X-ray diffraction and Raman spectroscopy. These results suggest that absorber air annealing and Na incorporation enhance absorber crystal growth which is advantageous in reducing bulk carrier recombination. As a result, the efficiency was significantly improved from 3.0% for solar cells fabricated directly on FTO to 5.2% for those whose absorbers were air annealed, incorporated with Na and made on W/FTO. The latter also exhibits the highest external quantum efficiency response and calculated short circuit current density for both sides illumination. This indicates that the air annealing, Na incorporation and W interlayer are enhancing the performance of bifacial CZTS solar cells with FTO back contact for both back side and front side illumination.

Chalcopyrite-based solar cells have reached an efficiency of 23.35%, yet further improvements have been challenging. Here we present a 23.64% certified efficiency for a (Ag,Cu)(In,Ga)Se2 solar cell, achieved through the implementation of a series of strategies. We introduce a relatively high amount of silver ([Ag]/([Ag] + [Cu]) = 0.19) into the absorber and implement a ‘hockey stick’-like gallium profile with a high concentration of Ga close to the molybdenum back contact and a lower, constant concentration in the region closer to the CdS buffer layer. This kind of elemental profile minimizes lateral and in-depth bandgap fluctuations, reducing losses in open-circuit voltage. In addition, the resulting bandgap energy is close to the local optimum of 1.15 eV. We apply a RbF post-deposition treatment that leads to the formation of a Rb–In–Se phase, probably RbInSe2, passivating the absorber surface. Finally, we discuss future research directions to reach 25% efficiency.

The photovoltaic performance of Cu₂ZnSnS₄ (CZTS)-based thin film solar cells with transparent back contacts is mainly constrained by the ohmic loss due to degradation of the back contacts at high temperatures required for the growth of the CZTS absorbers. This work has attempted to use ultrathin Zr and W interlayers at the SnO₂:F (FTO)/CZTS interface with the purpose of improving the ohmic properties of FTO and hence the performance of solar cells. 20 nm thick Zr and W layers were coated on FTO using direct current magnetron sputtering, followed by heating at 550 °C in a sulfur atmosphere for some of the samples. Inclusion of Zr and W interlayers compromised the transmittance of the FTO back contact, however heating of the samples in a sulfur atmosphere improved the transmittance to values comparable to or better than those of un-heated FTO. Furthermore, heated W/FTO showed a significant improvement in electrical conductivity as observed from Hall effect measurements. To make complete solar cells, CZTS absorber, buffer (CdS) and window (i-ZnO/ZnO:Al) layers were sequentially deposited on the un-heated FTO, Zr/FTO, W/FTO and Mo back contacts. Glow discharge optical emmision spectroscopy confirmed that Zr and W did not diffuse into the absorber and also prevented Na diffusion into the absorber. From the scanning electron microscopy cross sectional analysis, an impovement in the absober grain size and a clear junction between the absorber and FTO with W interlayer were observed. Grazing incident X-ray diffractometry confirmed the polycrystalline nature of the CZTS thin films and indicated the presence of other phases, particularly SnS₂. On the resulting solar cell parameters, the inclusion of a W interlayer reduced the series resistance from 4.5 Ωcm to 3.7 Ωcm². An improvement in short circuit current density (J_SC) is also observed, enhancing the efficiency of the solar cells with CZTS/W/FTO to 3.1 % compared to that with CZTS/Mo at 2.7 % and CZTS/FTO at 3.0 %. W was found to improve the external quantum efficiency response and J_SC of the solar cells for both backside and frontside light illumination. On the other hand, inclusion of a Zr interlayer (Zr/FTO) only slighlty improved the open circuit voltage, but compromised the J_SC compared to FTO and W/FTO back contacts. Thus, the findings of this study demonstrate the prospect for improving the performance of the CZTS-based thin film solar cells through the inclusion of ultrathin Zr and W interlayers between the FTO back contact and CZTS absorber.

Alloying a Cu(In,Ga)Se-2 (CIGS) solar cell absorber with silver to form (Ag,Cu)(In,Ga)Se-2 (ACIGS) is an effective route for improving the performance of CIGS-based thin-film solar cells by increasing the optical band gap and open-circuit voltage. While the role of Ag on the solar cell's performance and crystal structure has been analyzed, important gaps in our understanding remain, especially regarding the atomistic (short-range) structure. Previous X-ray absorption spectroscopy (XAS) results have shown that local atomic arrangements in Ag-free CIGS deviate from the long-range crystallographic structure deduced from X-ray diffraction (XRD). However, it is unclear how these structural deviations evolve with Ag alloying, particularly in the presence of Ga depth gradient. In this work, we employ angle-resolved XAS to probe the local environment of Se atoms within different depths of ACIGS absorbers with varying Ag content and Ga depth gradient. By complementing XAS results with X-ray diffraction measurements for long-range structures, glow discharge optical emission spectroscopy for elemental profiles, and scanning transmission electron microscopy for morphologies, changes in element-specific bond lengths, cell parameters, and anion displacement depending on compositions of Group [I] (Cu, Ag) and Group [III] (In, Ga) elements were mapped. The results suggest that the local atomic arrangement of the investigated ACIGS thin-film solar cell samples is depth-dependent and deviates from the long-range crystallographic structure. Possible reasons include tetragonal distortion or the presence of other phases or off-stoichiometry compounds. For the sample with the highest Ag content, increased bond lengths of Se-Group [I] atoms and Se-Ga are observed from the absorber bulk toward the near-absorber/buffer interface, whereas, in Ag-free CIGS, no significant changes are found. Results further indicate nonlinear anion displacement with Ag addition in the absorber bulk or with depth composition variation, which is likely to affect the electronic properties of solar cells. These findings offer a better understanding of the atomic-scale properties of ACIGS absorbers in actual thin-film solar cells containing in-depth composition variations.

Thin film solar cells spanning a wide range of compositions within the (Ag,Cu)(In,Ga)Se2 system are fabricated and characterised using current-voltage, external quantum efficiency and capacitance-based measurements. The stability of the devices over time, after dry annealing and after lightsoaking is evaluated, and the role of Ag and Ga content is explored. Ag-free CuInSe2 and Cu(In,Ga)Se2 are observed to be stable, however high-Ag, high-Ga (Ag,Cu)(In,Ga)Se2 is observed to exhibit fluctuations in short-circuit current. High-Ag (Ag,Cu)InSe2 is instead observed to have stable current, but open-circuit voltage and fill-factor are strongly responsive. Thus, it is indicated that high fractions of Ag in the material lead to significant stability concerns, with high Ga fractions affecting the way in which degradation manifests. Discussion of probable causes and mechanisms follows.

The stability of thin-film solar cells spanning a wide range of compositions within the (Ag,Cu)(In,Ga)Se-2 material system is evaluated over time, after dry-heat annealing and after light soaking, and the role of Ag and Ga content is explored. Ag-free CuInSe2 is relatively stable to annealing and storage, while Cu(In,Ga)Se-2 suffers a degradation of fill factor and carrier collection. High-Ga (Ag,Cu)(In,Ga)Se-2 suffers degradation of carrier collection after prolonged annealing, reducing the short-circuit current by approximate to 12%. Ga-free (Ag,Cu)InSe2 loses up to a third of open-circuit voltage and a quarter of fill factor after all treatments are applied. All samples suffer voltage losses after light soaking, with the Ga-free devices losing up to 50 mV and those containing Ga losing up to 90 mV. Ag incorporation leads to a significant reduction in doping, and a significant increase in the response of doping to treatments, with the depletion width of (Ag,Cu)(In,Ga)Se-2 samples expanding from approximate to 0.1 mu m as-grown to beyond 1.0 mu m after all treatments, compared to the Cu(In,Ga)Se-2 sample variation of approximate to 0.1-0.3 mu m. Connections between Ag content, doping instability, and performance degradation are discussed.

This study evaluates the effect of silver alloying, stoichiometry, and deposition temperature of wide-gap (Ag,Cu)GaSe2 (ACGS) absorber films for solar cell applications. Devices using a standard CdS buffer exhibit a strong anticorrelation between the open-circuit voltage (V-OC) and short-circuit current density (J(SC)), with V-OC decreasing and J(SC) increasing toward stoichiometric absorber composition. Increasing the ACGS deposition temperature leads to larger grains and improved J(SC), while V-OC is not affected. By adding more silver to the absorber (maximum tested [Ag]/([Ag]+[Cu]) [AAC] = 0.4), the widening of the space charge region (SCR) significantly enhances carrier collection. Experimental quantum efficiency spectra can be accurately simulated when assuming a very low diffusion length and perfect collection in the SCR. The highest efficiency of 8.3% (without antireflection coating [ARC]) is reached for an absorber with AAC = 0.4 grown at 600 degrees C. Replacing CdS by a (Zn,Sn)O buffer with lower electron affinity strongly mitigates interface recombination. Moreover, the V-OC-J(SC) anticorrelation is not evident anymore and the highest efficiency of 11.2% (11.6% w/ARC, V-OC = 985 mV, J(SC) = 18.6 mA cm(-2), fill factor = 61.0%) is reached for a close-stoichiometric ACGS solar cell with AAC = 0.4 processed at 650 degrees C.